JP2004164766A5 - - Google Patents

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Publication number
JP2004164766A5
JP2004164766A5 JP2002330912A JP2002330912A JP2004164766A5 JP 2004164766 A5 JP2004164766 A5 JP 2004164766A5 JP 2002330912 A JP2002330912 A JP 2002330912A JP 2002330912 A JP2002330912 A JP 2002330912A JP 2004164766 A5 JP2004164766 A5 JP 2004164766A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002330912A
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JP2004164766A (ja
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Priority to JP2002330912A priority Critical patent/JP2004164766A/ja
Priority claimed from JP2002330912A external-priority patent/JP2004164766A/ja
Priority to US10/455,479 priority patent/US6762953B2/en
Priority to CNB031787150A priority patent/CN100383893C/zh
Publication of JP2004164766A publication Critical patent/JP2004164766A/ja
Publication of JP2004164766A5 publication Critical patent/JP2004164766A5/ja
Pending legal-status Critical Current

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JP2002330912A 2002-11-14 2002-11-14 不揮発性記憶装置 Pending JP2004164766A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002330912A JP2004164766A (ja) 2002-11-14 2002-11-14 不揮発性記憶装置
US10/455,479 US6762953B2 (en) 2002-11-14 2003-06-06 Nonvolatile memory device with sense amplifier securing reading margin
CNB031787150A CN100383893C (zh) 2002-11-14 2003-07-14 含保证读出边限的读出放大器的非易失存储装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002330912A JP2004164766A (ja) 2002-11-14 2002-11-14 不揮発性記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009048265A Division JP2009117034A (ja) 2009-03-02 2009-03-02 差動増幅回路

Publications (2)

Publication Number Publication Date
JP2004164766A JP2004164766A (ja) 2004-06-10
JP2004164766A5 true JP2004164766A5 (ja) 2005-12-22

Family

ID=32290110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002330912A Pending JP2004164766A (ja) 2002-11-14 2002-11-14 不揮発性記憶装置

Country Status (3)

Country Link
US (1) US6762953B2 (ja)
JP (1) JP2004164766A (ja)
CN (1) CN100383893C (ja)

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KR100568512B1 (ko) * 2003-09-29 2006-04-07 삼성전자주식회사 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들
US7372722B2 (en) * 2003-09-29 2008-05-13 Samsung Electronics Co., Ltd. Methods of operating magnetic random access memory devices including heat-generating structures
US7369428B2 (en) * 2003-09-29 2008-05-06 Samsung Electronics Co., Ltd. Methods of operating a magnetic random access memory device and related devices and structures
KR100835275B1 (ko) * 2004-08-12 2008-06-05 삼성전자주식회사 스핀 주입 메카니즘을 사용하여 자기램 소자를 구동시키는방법들
JP4567963B2 (ja) * 2003-12-05 2010-10-27 ルネサスエレクトロニクス株式会社 半導体集積回路装置
KR100660539B1 (ko) * 2004-07-29 2006-12-22 삼성전자주식회사 자기 기억 소자 및 그 형성 방법
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CN1832036B (zh) * 2005-12-21 2012-05-30 威盛电子股份有限公司 存储器输出级电路及存储器数据输出的方法
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WO2008007174A1 (en) * 2006-07-10 2008-01-17 Freescale Semiconductor, Inc. Memory circuit with sense amplifier
TW200811874A (en) * 2006-08-25 2008-03-01 Etron Technology Inc Sense amplifier-based latch
US7561472B2 (en) * 2006-09-11 2009-07-14 Micron Technology, Inc. NAND architecture memory with voltage sensing
US8139432B2 (en) 2006-12-27 2012-03-20 Samsung Electronics Co., Ltd. Variable resistance memory device and system thereof
KR100886215B1 (ko) 2006-12-27 2009-03-02 삼성전자주식회사 저항체를 이용한 비휘발성 메모리 장치
US7483306B2 (en) 2007-02-02 2009-01-27 Macronix International Co., Ltd. Fast and accurate sensing amplifier for low voltage semiconductor memory
KR100834746B1 (ko) 2007-02-14 2008-06-05 삼성전자주식회사 센스 앰프를 포함하는 반도체 소자
US7535764B2 (en) * 2007-03-21 2009-05-19 Sandisk Corporation Adjusting resistance of non-volatile memory using dummy memory cells
US20080247218A1 (en) * 2007-04-04 2008-10-09 International Business Machines Corporation Design structure for implementing improved write performance for pcram devices
US20080247216A1 (en) * 2007-04-04 2008-10-09 Lamorey Mark C H Method and apparatus for implementing improved write performance for pcram devices
US7570080B2 (en) * 2007-09-28 2009-08-04 Intel Corporation Set dominant latch with soft error resiliency
US20090268505A1 (en) * 2008-04-23 2009-10-29 Peter Beer Method of Operating an Integrated Circuit, and Integrated Circuit
US8154903B2 (en) * 2009-06-17 2012-04-10 Qualcomm Incorporated Split path sensing circuit
KR101090469B1 (ko) 2009-07-31 2011-12-06 주식회사 하이닉스반도체 데이터제어회로
WO2011080784A1 (en) 2009-12-31 2011-07-07 Ferdinando Bedeschi Methods for a phase-change memory array
US8335101B2 (en) * 2010-01-21 2012-12-18 Qualcomm Incorporated Resistance-based memory with reduced voltage input/output device
JP5521612B2 (ja) 2010-02-15 2014-06-18 ソニー株式会社 不揮発性半導体メモリデバイス
US9207750B2 (en) 2012-12-14 2015-12-08 Intel Corporation Apparatus and method for reducing leakage power of a circuit
US9343147B2 (en) * 2013-03-08 2016-05-17 Microship Technology Incorporated Resistive random access memory (ReRAM) and conductive bridging random access memory (CBRAM) cross coupled fuse and read method and system
KR102173441B1 (ko) * 2014-02-04 2020-11-03 삼성전자주식회사 저항체를 이용한 비휘발성 메모리 장치
KR102215359B1 (ko) * 2014-08-01 2021-02-15 삼성전자주식회사 비휘발성 메모리 장치와 그 센싱 방법
US9627016B2 (en) * 2015-09-10 2017-04-18 Cypress Semiconductor Corporation Systems, methods, and devices for parallel read and write operations
JP2018156697A (ja) * 2017-03-15 2018-10-04 東芝メモリ株式会社 半導体記憶装置
JP2018163728A (ja) * 2017-03-24 2018-10-18 東芝メモリ株式会社 メモリデバイス及びメモリデバイスの制御方法
CN110136759B (zh) * 2018-02-09 2021-01-12 上海磁宇信息科技有限公司 降低读操作对数据扰动的电路

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US6191989B1 (en) * 2000-03-07 2001-02-20 International Business Machines Corporation Current sensing amplifier
JP4049519B2 (ja) * 2000-07-17 2008-02-20 松下電器産業株式会社 強誘電体記憶装置
JP4726292B2 (ja) * 2000-11-14 2011-07-20 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
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JP4052829B2 (ja) * 2001-12-12 2008-02-27 株式会社ルネサステクノロジ 薄膜磁性体記憶装置
JP4046513B2 (ja) * 2002-01-30 2008-02-13 株式会社ルネサステクノロジ 半導体集積回路
US6678189B2 (en) * 2002-02-25 2004-01-13 Hewlett-Packard Development Company, L.P. Method and system for performing equipotential sensing across a memory array to eliminate leakage currents
US6657889B1 (en) * 2002-06-28 2003-12-02 Motorola, Inc. Memory having write current ramp rate control
US6600690B1 (en) * 2002-06-28 2003-07-29 Motorola, Inc. Sense amplifier for a memory having at least two distinct resistance states
US6621729B1 (en) * 2002-06-28 2003-09-16 Motorola, Inc. Sense amplifier incorporating a symmetric midpoint reference
US6590804B1 (en) * 2002-07-16 2003-07-08 Hewlett-Packard Development Company, L.P. Adjustable current mode differential amplifier

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