JP2004103578A - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP2004103578A
JP2004103578A JP2003299045A JP2003299045A JP2004103578A JP 2004103578 A JP2004103578 A JP 2004103578A JP 2003299045 A JP2003299045 A JP 2003299045A JP 2003299045 A JP2003299045 A JP 2003299045A JP 2004103578 A JP2004103578 A JP 2004103578A
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Japan
Prior art keywords
electrode
discharge
plasma processing
plasma
ceramic layer
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JP2003299045A
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Japanese (ja)
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JP2004103578A5 (https=
Inventor
Takuya Yara
屋良　卓也
Makoto Takatsuma
高妻　誠
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Sekisui Chemical Co Ltd
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Sekisui Chemical Co Ltd
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Priority to JP2003299045A priority Critical patent/JP2004103578A/ja
Publication of JP2004103578A publication Critical patent/JP2004103578A/ja
Publication of JP2004103578A5 publication Critical patent/JP2004103578A5/ja
Pending legal-status Critical Current

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  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Cleaning In General (AREA)
JP2003299045A 2002-08-23 2003-08-22 プラズマ処理方法 Pending JP2004103578A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003299045A JP2004103578A (ja) 2002-08-23 2003-08-22 プラズマ処理方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002244202 2002-08-23
JP2003299045A JP2004103578A (ja) 2002-08-23 2003-08-22 プラズマ処理方法

Publications (2)

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JP2004103578A true JP2004103578A (ja) 2004-04-02
JP2004103578A5 JP2004103578A5 (https=) 2005-07-14

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ID=32301161

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JP2003299045A Pending JP2004103578A (ja) 2002-08-23 2003-08-22 プラズマ処理方法

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JP (1) JP2004103578A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007059397A (ja) * 2005-08-22 2007-03-08 Kc Tech Co Ltd 常圧プラズマ発生用電極の製造方法及び電極構造とこれを利用した常圧プラズマの発生装置
JP2020170835A (ja) * 2019-04-01 2020-10-15 株式会社日立ハイテク 半導体素子の製造方法及びプラズマ処理装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007059397A (ja) * 2005-08-22 2007-03-08 Kc Tech Co Ltd 常圧プラズマ発生用電極の製造方法及び電極構造とこれを利用した常圧プラズマの発生装置
JP2020170835A (ja) * 2019-04-01 2020-10-15 株式会社日立ハイテク 半導体素子の製造方法及びプラズマ処理装置
US10892158B2 (en) 2019-04-01 2021-01-12 Hitachi High-Tech Corporation Manufacturing method of a semiconductor device and a plasma processing apparatus

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