JP2007059397A - 常圧プラズマ発生用電極の製造方法及び電極構造とこれを利用した常圧プラズマの発生装置 - Google Patents
常圧プラズマ発生用電極の製造方法及び電極構造とこれを利用した常圧プラズマの発生装置 Download PDFInfo
- Publication number
- JP2007059397A JP2007059397A JP2006224611A JP2006224611A JP2007059397A JP 2007059397 A JP2007059397 A JP 2007059397A JP 2006224611 A JP2006224611 A JP 2006224611A JP 2006224611 A JP2006224611 A JP 2006224611A JP 2007059397 A JP2007059397 A JP 2007059397A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- plasma
- oxide film
- dielectric
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 239000010407 anodic oxide Substances 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 58
- 239000007789 gas Substances 0.000 description 39
- 230000001681 protective effect Effects 0.000 description 19
- 239000010409 thin film Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 229910000838 Al alloy Inorganic materials 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000005192 partition Methods 0.000 description 6
- -1 107 Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 230000005685 electric field effect Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000036578 sleeping time Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2443—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the plasma fluid flowing through a dielectric tube
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2418—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the electrodes being embedded in the dielectric
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Fluid Mechanics (AREA)
- Plasma Technology (AREA)
- Cleaning In General (AREA)
Abstract
【解決手段】プラズマの電極構造300は、プラズマの形成のための高周波電力を供給するため、上下部にお互いに平行を取って向き合う平板型の電源電極311及び接地電極321を具備し、電源電極311及び接地電極321の全表面にそれぞれ酸化被膜層310,320を均一に形成して、電源電極311及び接地電極321の間にプラズマの発生空間330を形成する。
【選択図】図3a
Description
図1に図示されたところのように、洗浄システム(100)は、洗浄対象であるLCD ガラス(130)の表面にプラズマ反応で生成された酸素ラジカル(O Radical)(107)を噴射する常圧プラズマ発生装置(110)と、前記常圧プラズマ発生装置に交流電圧を供給する電源供給装置(140)と、前記常圧プラズマ発生装置に繋がれたガス配管を通じて窒素、酸素、空気などのガスを供給するガス供給装置(120)と、前記常圧プラズマ発生装置がプラズマ常圧放電を実施する間 LCD ガラス(130)を一定した速度で一方向に移送する移送装置(160)で構成される。
また、常圧プラズマ発生装置(110)の上部に、ガス注入口(108)を通じて供給された処理ガスが隔壁誘電体空間(105)の内部に均一に分布されるように、ガス分配機(Gas Distributor)(109)が配置される。
また、第1誘電体(101)上の電源電極(104)は電源供給装置(140)と繋がれて、第2誘電体(102)上の接地電極(103)は接地(112)になる。
すなわち、LCDガラス(130)の下部に形成された移送装置(160)が洗浄対象であるLCDガラス(130)を一定した速度で一方向に移送させる。この時、第1誘電体(101)上に形成された電源電極(104)に交流電圧を供給すれば、隔壁誘電体空間(105)に流入されたガスがプラズマ反応を起こして、プラズマ反応によって生成された酸素ラジカル(107)がガス放出口(106)を通じて常圧プラズマ発生装置(110)の本体外部に放出される。
また、図4aに図示されたところのように、電源電極(311)及び接地電極(321)に皆酸化被膜層(310)(320)を形成したが、どの一つの電極にだけ酸化被膜層を形成することができるし、特にガス捌け口(323)の内側面に面放電が発生される接地電極(321)にだけ酸化被膜層を形成して使うことができる。
また、接地電極(321)が既存の金属薄膜(4〜20μm)の形態ではないバルク(bulk)状態(1〜5mm)のアルミ合金の電極だから、既存の金属の薄膜と同じエッジ部の電界效果が発生し乃至、電場の集中現象も発生しない。
200、300 プラズマの電極構造
211、311 電源電極
221、321 接地電極
223、323 ガス捌け口
320 酸化被膜層
Claims (8)
- 一対の電極と、
前記一対の電極が相互離隔されてその間に形成されるプラズマの発生空間と、
前記一対の電極の中で少なくとも一つの表面に均一に形成された酸化被膜層を含むことを特徴とする、
プラズマの電極構造。 - 前記電極は表面に自然的または人為的に酸化被膜を形成することができる合金であることを特徴とする、請求項1記載のプラズマの電極構造。
- 前記電極はアルミ、チタン、マグネシウム、 亜鉛、タンタルの何れか一つの合金で構成されたことを特徴とする、請求項1記載のプラズマの電極構造。
- 前記酸化被膜層は酸化アルミ、酸化チタン、酸化マグネシウム、酸化亜鉛、酸化タンタルの中の何れかであることを特徴とする、請求項1乃至請求項3の何れかに記載のプラズマの電極構造。
- 前記酸化被膜層は陽極酸化被膜形成法を利用して形成されることを特徴とする、請求項4記載のプラズマの電極構造。
- 一対の電極と、前記一対の電極の中で少なくとも一つの表面に均一に形成された酸化被膜層で構成されるプラズマの電極とを含み、
前記電極の間に形成されたプラズマの発生空間に流入されたガスをプラズマ放電して、発生されたガスイオンを被処理物に噴射することを特徴とする、常圧プラズマの発生装置。 - 電極の製造方法において、
金属を利用して電極の自体を形成して、前記電極の全表面に酸化被膜を均一に形成することを特徴とする、
常圧プラズマ発生用電極の製造方法。 - 前記酸化被膜は陽極酸化被膜形成法を利用して形成されることを特徴とする、請求項7記載の常圧プラズマ発生用電極の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050076654A KR100541867B1 (ko) | 2005-08-22 | 2005-08-22 | 상압 플라즈마 발생용 전극 제조방법 및 전극구조와 이를이용한 상압 플라즈마 발생장치 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007059397A true JP2007059397A (ja) | 2007-03-08 |
Family
ID=37178077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006224611A Pending JP2007059397A (ja) | 2005-08-22 | 2006-08-21 | 常圧プラズマ発生用電極の製造方法及び電極構造とこれを利用した常圧プラズマの発生装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20070182327A1 (ja) |
JP (1) | JP2007059397A (ja) |
KR (1) | KR100541867B1 (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009135095A (ja) * | 2007-10-30 | 2009-06-18 | Kyocera Corp | 放電用電極体、放電用電極アセンブリおよび放電処理装置 |
KR100988291B1 (ko) | 2008-01-25 | 2010-10-18 | 주식회사 셈테크놀러지 | 평행 평판형 전극 구조를 구비하는 대기압 플라즈마 표면처리 장치 |
JP2011154973A (ja) * | 2010-01-28 | 2011-08-11 | Mitsubishi Electric Corp | プラズマ処理装置及びプラズマ処理方法 |
JP2014154248A (ja) * | 2013-02-05 | 2014-08-25 | Mitsubishi Electric Corp | プラズマ処理装置 |
JP2014186900A (ja) * | 2013-03-25 | 2014-10-02 | Murata Mfg Co Ltd | 放電素子およびその製造方法 |
WO2017061735A1 (ko) * | 2015-10-05 | 2017-04-13 | (주)에프티넷 | 연면방전과 공간방전을 동시에 사용하는 복합형 유전체 장벽 방전 전극 |
KR101869617B1 (ko) * | 2016-12-16 | 2018-07-23 | 한국기초과학지원연구원 | 대기압 플라즈마 표면처리장치 |
WO2019049230A1 (ja) * | 2017-09-06 | 2019-03-14 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
WO2024200588A1 (de) * | 2023-03-31 | 2024-10-03 | Kogelheide Friederike | Plasmaapplikator mit einem hochspannungsgenerator |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009105072A1 (en) * | 2008-02-22 | 2009-08-27 | Carrier Corporation | Cermet as a dielectric in a dielectric barrier discharge device |
CN102085520A (zh) * | 2009-12-04 | 2011-06-08 | 中国科学院微电子研究所 | 常压双介质阻挡扁口型活性自由基清洗系统 |
BR112012027756B1 (pt) | 2010-04-30 | 2021-09-21 | Agc Glass Europe | Eletrodo para processo plasma dbd e dispositivo compreendendo o mesmo |
TWI427183B (zh) * | 2010-11-25 | 2014-02-21 | Ind Tech Res Inst | 電漿處理裝置 |
CN102896113A (zh) * | 2011-07-26 | 2013-01-30 | 中国科学院微电子研究所 | 一种新型的双介质阻挡常压等离子体自由基清洗喷枪 |
JP2013084552A (ja) * | 2011-09-29 | 2013-05-09 | Tokyo Electron Ltd | ラジカル選択装置及び基板処理装置 |
CN104103485B (zh) * | 2013-04-15 | 2016-09-07 | 中微半导体设备(上海)有限公司 | 电感耦合等离子体装置 |
KR101845767B1 (ko) | 2016-09-30 | 2018-04-05 | 주식회사 에이아이코리아 | 플라즈마 장치용 전극 및 이의 제조방법 |
KR101870766B1 (ko) * | 2017-03-10 | 2018-06-27 | 주식회사 에이아이코리아 | 플라즈마 전극 어셈블리 및 그 제조방법 |
KR102242522B1 (ko) * | 2019-04-10 | 2021-04-21 | (주)엔피홀딩스 | 플라즈마 발생 장치 |
KR20240071591A (ko) * | 2022-11-16 | 2024-05-23 | 주식회사 인포비온 | 전자 방출원 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH113798A (ja) * | 1997-06-10 | 1999-01-06 | Tokyo Inst Of Technol | プラズマ処理装置およびプラズマ処理方法 |
JP2003022898A (ja) * | 2001-07-06 | 2003-01-24 | Sekisui Chem Co Ltd | 放電プラズマ処理装置及びそれを用いた処理方法 |
WO2004001790A1 (en) * | 2002-06-21 | 2003-12-31 | Axcelis Technologies, Inc. | Dielectric barrier discharge apparatus and process for treating a substrate |
JP2004103578A (ja) * | 2002-08-23 | 2004-04-02 | Sekisui Chem Co Ltd | プラズマ処理方法 |
JP2004207145A (ja) * | 2002-12-26 | 2004-07-22 | Sekisui Chem Co Ltd | 放電プラズマ処理装置 |
JP2004227990A (ja) * | 2003-01-24 | 2004-08-12 | Kunihide Tachibana | プラズマ処理方法およびプラズマ処理装置 |
JP2005044565A (ja) * | 2003-07-24 | 2005-02-17 | Seiko Epson Corp | プラズマ処理装置およびプラズマ処理方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6037713A (en) * | 1996-11-25 | 2000-03-14 | Fujitsu Limited | Display panel having compound film covered electrodes |
CA2452939A1 (en) * | 2001-07-02 | 2003-01-16 | Seth Tropper | A novel electrode for use with atmospheric pressure plasma emitter apparatus and method for using the same |
JP3876167B2 (ja) * | 2002-02-13 | 2007-01-31 | 川崎マイクロエレクトロニクス株式会社 | 洗浄方法および半導体装置の製造方法 |
-
2005
- 2005-08-22 KR KR1020050076654A patent/KR100541867B1/ko active IP Right Grant
-
2006
- 2006-08-21 JP JP2006224611A patent/JP2007059397A/ja active Pending
- 2006-08-22 US US11/466,203 patent/US20070182327A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH113798A (ja) * | 1997-06-10 | 1999-01-06 | Tokyo Inst Of Technol | プラズマ処理装置およびプラズマ処理方法 |
JP2003022898A (ja) * | 2001-07-06 | 2003-01-24 | Sekisui Chem Co Ltd | 放電プラズマ処理装置及びそれを用いた処理方法 |
WO2004001790A1 (en) * | 2002-06-21 | 2003-12-31 | Axcelis Technologies, Inc. | Dielectric barrier discharge apparatus and process for treating a substrate |
JP2004103578A (ja) * | 2002-08-23 | 2004-04-02 | Sekisui Chem Co Ltd | プラズマ処理方法 |
JP2004207145A (ja) * | 2002-12-26 | 2004-07-22 | Sekisui Chem Co Ltd | 放電プラズマ処理装置 |
JP2004227990A (ja) * | 2003-01-24 | 2004-08-12 | Kunihide Tachibana | プラズマ処理方法およびプラズマ処理装置 |
JP2005044565A (ja) * | 2003-07-24 | 2005-02-17 | Seiko Epson Corp | プラズマ処理装置およびプラズマ処理方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009135095A (ja) * | 2007-10-30 | 2009-06-18 | Kyocera Corp | 放電用電極体、放電用電極アセンブリおよび放電処理装置 |
KR100988291B1 (ko) | 2008-01-25 | 2010-10-18 | 주식회사 셈테크놀러지 | 평행 평판형 전극 구조를 구비하는 대기압 플라즈마 표면처리 장치 |
JP2011154973A (ja) * | 2010-01-28 | 2011-08-11 | Mitsubishi Electric Corp | プラズマ処理装置及びプラズマ処理方法 |
JP2014154248A (ja) * | 2013-02-05 | 2014-08-25 | Mitsubishi Electric Corp | プラズマ処理装置 |
JP2014186900A (ja) * | 2013-03-25 | 2014-10-02 | Murata Mfg Co Ltd | 放電素子およびその製造方法 |
WO2017061735A1 (ko) * | 2015-10-05 | 2017-04-13 | (주)에프티넷 | 연면방전과 공간방전을 동시에 사용하는 복합형 유전체 장벽 방전 전극 |
KR101869617B1 (ko) * | 2016-12-16 | 2018-07-23 | 한국기초과학지원연구원 | 대기압 플라즈마 표면처리장치 |
WO2019049230A1 (ja) * | 2017-09-06 | 2019-03-14 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
JPWO2019049230A1 (ja) * | 2017-09-06 | 2020-05-28 | 東芝三菱電機産業システム株式会社 | 活性ガス生成装置 |
WO2024200588A1 (de) * | 2023-03-31 | 2024-10-03 | Kogelheide Friederike | Plasmaapplikator mit einem hochspannungsgenerator |
Also Published As
Publication number | Publication date |
---|---|
US20070182327A1 (en) | 2007-08-09 |
KR100541867B1 (ko) | 2006-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2007059397A (ja) | 常圧プラズマ発生用電極の製造方法及び電極構造とこれを利用した常圧プラズマの発生装置 | |
KR102245044B1 (ko) | 플라즈마 처리 챔버의 조밀한 산화물 코팅된 구성 요소 및 이의 제조 방법 | |
KR100856592B1 (ko) | 냉각 블록 및 플라즈마 처리 장치 | |
KR100749406B1 (ko) | 불용방전 방지를 위한 전극 구조를 갖는 대기압 플라즈마발생장치 | |
KR20000029287A (ko) | 플라즈마 가공 장치 및 이 가공 장치를 사용하여 수행되는플라즈마 가공 방법 | |
JP2010103455A (ja) | プラズマ処理装置 | |
KR101828862B1 (ko) | 플라즈마 처리 장치 및 샤워 헤드 | |
WO2018151892A1 (en) | Surface coating for plasma processing chamber components | |
CN1777346B (zh) | 等离子处理装置 | |
KR100988291B1 (ko) | 평행 평판형 전극 구조를 구비하는 대기압 플라즈마 표면처리 장치 | |
US20210233748A1 (en) | Active gas generation apparatus and deposition processing apparatus | |
JP2002058995A (ja) | プラズマ処理装置及びプラズマ処理方法 | |
JP2011108615A (ja) | プラズマ処理装置 | |
KR100988290B1 (ko) | 평행 평판형 전극 구조를 구비하는 대기압 플라즈마표면처리 장치 | |
KR100760651B1 (ko) | 처리가스 공급관을 구비하는 기판 표면처리장치 | |
TWI314339B (en) | Plasma processing apparatus | |
KR20120013763A (ko) | 무냉각식 상압 플라즈마 장치 | |
KR101195137B1 (ko) | 셀형 전극 구조 및 이를 이용한 상압 플라즈마 발생장치 | |
KR101272101B1 (ko) | 상압 플라즈마 헤더 | |
KR100820916B1 (ko) | 리모트 저온 플라즈마 반응기 | |
JP7275927B2 (ja) | スパッタ装置の使用方法 | |
JP2005139487A (ja) | スパッタリング装置 | |
JP2005139479A (ja) | スパッタリング装置 | |
UA77061C2 (en) | Mechanism for magnetron sputtering of materials | |
JP2007109446A (ja) | プラズマ生成装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081209 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090309 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090707 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20091007 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20091013 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100119 |