JP2004096067A5 - - Google Patents

Download PDF

Info

Publication number
JP2004096067A5
JP2004096067A5 JP2003065310A JP2003065310A JP2004096067A5 JP 2004096067 A5 JP2004096067 A5 JP 2004096067A5 JP 2003065310 A JP2003065310 A JP 2003065310A JP 2003065310 A JP2003065310 A JP 2003065310A JP 2004096067 A5 JP2004096067 A5 JP 2004096067A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003065310A
Other versions
JP3964811B2 (ja
JP2004096067A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003065310A priority Critical patent/JP3964811B2/ja
Priority claimed from JP2003065310A external-priority patent/JP3964811B2/ja
Priority to US10/445,952 priority patent/US7034346B2/en
Publication of JP2004096067A publication Critical patent/JP2004096067A/ja
Priority to US11/186,838 priority patent/US7341900B2/en
Publication of JP2004096067A5 publication Critical patent/JP2004096067A5/ja
Application granted granted Critical
Publication of JP3964811B2 publication Critical patent/JP3964811B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2003065310A 2002-07-09 2003-03-11 半導体装置及びその製造方法 Expired - Lifetime JP3964811B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003065310A JP3964811B2 (ja) 2002-07-09 2003-03-11 半導体装置及びその製造方法
US10/445,952 US7034346B2 (en) 2002-07-09 2003-05-28 Semiconductor device and method for manufacturing the same
US11/186,838 US7341900B2 (en) 2002-07-09 2005-07-22 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002199682 2002-07-09
JP2003065310A JP3964811B2 (ja) 2002-07-09 2003-03-11 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2004096067A JP2004096067A (ja) 2004-03-25
JP2004096067A5 true JP2004096067A5 (ja) 2006-04-20
JP3964811B2 JP3964811B2 (ja) 2007-08-22

Family

ID=30117412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003065310A Expired - Lifetime JP3964811B2 (ja) 2002-07-09 2003-03-11 半導体装置及びその製造方法

Country Status (2)

Country Link
US (2) US7034346B2 (ja)
JP (1) JP3964811B2 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319964A (ja) * 2003-03-28 2004-11-11 Mitsubishi Electric Corp 半導体装置及びその製造方法
US7397084B2 (en) * 2005-04-01 2008-07-08 Semiconductor Components Industries, L.L.C. Semiconductor device having enhanced performance and method
US7659570B2 (en) * 2005-05-09 2010-02-09 Alpha & Omega Semiconductor Ltd. Power MOSFET device structure for high frequency applications
JP2006339516A (ja) 2005-06-03 2006-12-14 Rohm Co Ltd 半導体装置およびその製造方法
JP5025935B2 (ja) * 2005-09-29 2012-09-12 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型電界効果トランジスタの製造方法
JP5014622B2 (ja) * 2005-12-08 2012-08-29 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型半導体装置の製造方法
JP5601010B2 (ja) * 2010-04-20 2014-10-08 三菱電機株式会社 半導体素子
JP5704003B2 (ja) * 2011-07-15 2015-04-22 住友電気工業株式会社 半導体装置の製造方法
JP5831526B2 (ja) 2013-01-17 2015-12-09 株式会社デンソー 半導体装置およびその製造方法
CN107170682A (zh) * 2016-03-07 2017-09-15 北大方正集团有限公司 Vdmos器件的制作方法
JP6616280B2 (ja) * 2016-12-27 2019-12-04 トヨタ自動車株式会社 スイッチング素子
JP2019046991A (ja) * 2017-09-04 2019-03-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
EP4092752A1 (en) * 2021-05-21 2022-11-23 Infineon Technologies Austria AG Semiconductor die with a transistor device and method of manufacturing the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155052A (en) * 1991-06-14 1992-10-13 Davies Robert B Vertical field effect transistor with improved control of low resistivity region geometry
JP3192857B2 (ja) 1994-01-28 2001-07-30 三洋電機株式会社 縦型ｍｏｓ半導体装置及びその製造方法
US5703383A (en) * 1995-04-11 1997-12-30 Kabushiki Kaisha Toshiba Power semiconductor device
JPH08298321A (ja) 1995-04-27 1996-11-12 Nippondenso Co Ltd 半導体装置
US5780341A (en) * 1996-12-06 1998-07-14 Halo Lsi Design & Device Technology, Inc. Low voltage EEPROM/NVRAM transistors and making method
JP3460170B2 (ja) * 1997-02-03 2003-10-27 シャープ株式会社 薄膜トランジスタ及びその製造方法
JPH10321855A (ja) * 1997-03-18 1998-12-04 Toshiba Corp 高耐圧半導体装置
US6087697A (en) * 1997-10-31 2000-07-11 Stmicroelectronics, Inc. Radio frequency power MOSFET device having improved performance characteristics
US6259142B1 (en) * 1998-04-07 2001-07-10 Advanced Micro Devices, Inc. Multiple split gate semiconductor device and fabrication method
US6346726B1 (en) 1998-11-09 2002-02-12 International Rectifier Corp. Low voltage MOSFET power device having a minimum figure of merit
JP2002184784A (ja) 2000-12-18 2002-06-28 Ricoh Co Ltd 縦型二重拡散ｍｏｓｆｅｔとその製造方法

Similar Documents

Publication Publication Date Title
BE2015C007I2 (ja)
BE2014C055I2 (ja)
BE2014C027I2 (ja)
BE2014C003I2 (ja)
BE2011C030I2 (ja)
JP2003319215A5 (ja)
JP2004161000A5 (ja)
JP2004204846A5 (ja)
JP2003296734A5 (ja)
BE2015C005I2 (ja)
JP2004096067A5 (ja)
JP2004099015A5 (ja)
JP2003273183A5 (ja)
JP2004122747A5 (ja)
JP2004229401A5 (ja)
JP2003347377A5 (ja)
JP2004072083A5 (ja)
JP2004201264A5 (ja)
JP2004226488A5 (ja)
BE2015C024I2 (ja)
IT1343046B1 (ja)
AU2002340206A1 (ja)
AU2002353888A1 (ja)
AU2002322913A1 (ja)
AU2002318342A1 (ja)