JP2004095717A - アニールウェーハのボロン汚染消滅方法 - Google Patents

アニールウェーハのボロン汚染消滅方法 Download PDF

Info

Publication number
JP2004095717A
JP2004095717A JP2002252608A JP2002252608A JP2004095717A JP 2004095717 A JP2004095717 A JP 2004095717A JP 2002252608 A JP2002252608 A JP 2002252608A JP 2002252608 A JP2002252608 A JP 2002252608A JP 2004095717 A JP2004095717 A JP 2004095717A
Authority
JP
Japan
Prior art keywords
boron
wafer
annealing
oxide film
hydrogen gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002252608A
Other languages
English (en)
Japanese (ja)
Inventor
▲裴▼　昭益
Shoeki Hai
Yoshinobu Nakada
中田　嘉信
Kenichi Kaneko
金子　健一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumitomo Mitsubishi Silicon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Mitsubishi Silicon Corp filed Critical Sumitomo Mitsubishi Silicon Corp
Priority to JP2002252608A priority Critical patent/JP2004095717A/ja
Priority to AU2003261789A priority patent/AU2003261789A1/en
Priority to PCT/JP2003/010934 priority patent/WO2004021428A1/ja
Priority to KR1020057003175A priority patent/KR100686989B1/ko
Priority to US10/525,442 priority patent/US7199057B2/en
Priority to EP03791374A priority patent/EP1548817B1/en
Priority to TW092123975A priority patent/TW200406848A/zh
Publication of JP2004095717A publication Critical patent/JP2004095717A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2002252608A 2002-08-30 2002-08-30 アニールウェーハのボロン汚染消滅方法 Pending JP2004095717A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002252608A JP2004095717A (ja) 2002-08-30 2002-08-30 アニールウェーハのボロン汚染消滅方法
AU2003261789A AU2003261789A1 (en) 2002-08-30 2003-08-28 Method of eliminating boron contamination of annealed wafer
PCT/JP2003/010934 WO2004021428A1 (ja) 2002-08-30 2003-08-28 アニールウェーハのボロン汚染消滅方法
KR1020057003175A KR100686989B1 (ko) 2002-08-30 2003-08-28 어닐 웨이퍼의 보론 오염 소멸 방법
US10/525,442 US7199057B2 (en) 2002-08-30 2003-08-28 Method of eliminating boron contamination in annealed wafer
EP03791374A EP1548817B1 (en) 2002-08-30 2003-08-28 Method of eliminating boron contamination of annealed wafer
TW092123975A TW200406848A (en) 2002-08-30 2003-08-29 Method of eliminating boron contamination of annealed wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002252608A JP2004095717A (ja) 2002-08-30 2002-08-30 アニールウェーハのボロン汚染消滅方法

Publications (1)

Publication Number Publication Date
JP2004095717A true JP2004095717A (ja) 2004-03-25

Family

ID=31972751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002252608A Pending JP2004095717A (ja) 2002-08-30 2002-08-30 アニールウェーハのボロン汚染消滅方法

Country Status (7)

Country Link
US (1) US7199057B2 (https=)
EP (1) EP1548817B1 (https=)
JP (1) JP2004095717A (https=)
KR (1) KR100686989B1 (https=)
AU (1) AU2003261789A1 (https=)
TW (1) TW200406848A (https=)
WO (1) WO2004021428A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005322875A (ja) * 2004-05-10 2005-11-17 Siltron Inc シリコンウェーハ及びその製造方法
US8153538B1 (en) 2010-12-09 2012-04-10 Memc Electronic Materials, Inc. Process for annealing semiconductor wafers with flat dopant depth profiles

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080150028A1 (en) * 2006-12-21 2008-06-26 Advanced Micro Devices, Inc. Zero interface polysilicon to polysilicon gate for semiconductor device
CN103311110B (zh) * 2012-03-12 2016-08-31 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法，晶体管的形成方法
CN106024586B (zh) * 2016-06-23 2018-07-06 扬州扬杰电子科技股份有限公司 一种碳化硅表面清洁方法
JP6834932B2 (ja) * 2017-12-19 2021-02-24 株式会社Sumco 貼り合わせウェーハ用の支持基板の製造方法および貼り合わせウェーハの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058552A (ja) * 1998-08-06 2000-02-25 Toshiba Ceramics Co Ltd シリコンウェーハの熱処理方法
JP2002100634A (ja) * 2000-09-21 2002-04-05 Shin Etsu Handotai Co Ltd アニールウェーハの製造方法およびアニールウェーハ
WO2002052632A1 (en) * 2000-12-22 2002-07-04 Komatsu Denshi Kinzoku Kabushiki Kaisha Method of heat treatment of silicon wafer doped with boron
JP2004072066A (ja) * 2002-08-06 2004-03-04 Siltron Inc アニールウェーハの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000082679A (ja) * 1998-07-08 2000-03-21 Canon Inc 半導体基板とその作製方法
JP4264213B2 (ja) * 2000-03-29 2009-05-13 信越半導体株式会社 アニールウェーハの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058552A (ja) * 1998-08-06 2000-02-25 Toshiba Ceramics Co Ltd シリコンウェーハの熱処理方法
JP2002100634A (ja) * 2000-09-21 2002-04-05 Shin Etsu Handotai Co Ltd アニールウェーハの製造方法およびアニールウェーハ
WO2002052632A1 (en) * 2000-12-22 2002-07-04 Komatsu Denshi Kinzoku Kabushiki Kaisha Method of heat treatment of silicon wafer doped with boron
JP2004072066A (ja) * 2002-08-06 2004-03-04 Siltron Inc アニールウェーハの製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005322875A (ja) * 2004-05-10 2005-11-17 Siltron Inc シリコンウェーハ及びその製造方法
JP2007318160A (ja) * 2004-05-10 2007-12-06 Siltron Inc シリコンウェーハ
JP2007329488A (ja) * 2004-05-10 2007-12-20 Siltron Inc シリコンウェーハの製造方法
US8153538B1 (en) 2010-12-09 2012-04-10 Memc Electronic Materials, Inc. Process for annealing semiconductor wafers with flat dopant depth profiles

Also Published As

Publication number Publication date
AU2003261789A1 (en) 2004-03-19
EP1548817A1 (en) 2005-06-29
TWI303087B (https=) 2008-11-11
KR20050058517A (ko) 2005-06-16
TW200406848A (en) 2004-05-01
EP1548817B1 (en) 2012-05-30
US7199057B2 (en) 2007-04-03
US20060148249A1 (en) 2006-07-06
KR100686989B1 (ko) 2007-02-26
WO2004021428A1 (ja) 2004-03-11
EP1548817A4 (en) 2007-08-01

Similar Documents

Publication Publication Date Title
JP3011178B2 (ja) 半導体シリコンウェーハ並びにその製造方法と熱処理装置
KR101684873B1 (ko) 실리콘 기판의 제조 방법 및 실리콘 기판
JP2000272995A (ja) シリコン単結晶、シリコンウェーハ及びエピタキシャルウェーハ
US10483128B2 (en) Epitaxially coated semiconductor wafer, and method for producing an epitaxially coated semiconductor wafer
EP1251554B1 (en) Method of producing an annealed wafer
JP2019195020A (ja) 半導体シリコンウェーハの金属不純物除去方法
JPH11168106A (ja) 半導体基板の処理方法
JP2004095717A (ja) アニールウェーハのボロン汚染消滅方法
JP2001253795A (ja) シリコンエピタキシャルウェーハとその製造方法
US20120049330A1 (en) Silicon wafer and method for producing the same
JP4822582B2 (ja) ボロンドープされたシリコンウエハの熱処理方法
JP3422345B2 (ja) タングステン膜の形成方法
JPS62123098A (ja) シリコン単結晶の製造方法
JP2001274167A (ja) シリコン半導体基板およびその製造方法
EP1786023A1 (en) Simox substrate manufacturing method
JP4259881B2 (ja) シリコンウエハの清浄化方法
US20060138540A1 (en) Semiconductor wafer having a semiconductor layer and an electrically insulating layer beneath it, and process for producing it
JP2008227060A (ja) アニールウエハの製造方法
JP3238957B2 (ja) シリコンウェーハ
JPH09199379A (ja) 高品位エピタキシャルウエハ及びその製造方法
JP2002076005A (ja) シリコン単結晶ウエハ
CN116209795A (zh) 硅单晶基板的制造方法及硅单晶基板
JP2002353149A (ja) エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
JPH07165495A (ja) シリコンウエーハ
JPS61271821A (ja) シリコンのエピタキシヤル成長方法

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20040402

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20040416

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050614

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090616

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090731

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100601

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20101026