JP2004079606A5 - - Google Patents

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Publication number
JP2004079606A5
JP2004079606A5 JP2002234487A JP2002234487A JP2004079606A5 JP 2004079606 A5 JP2004079606 A5 JP 2004079606A5 JP 2002234487 A JP2002234487 A JP 2002234487A JP 2002234487 A JP2002234487 A JP 2002234487A JP 2004079606 A5 JP2004079606 A5 JP 2004079606A5
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JP
Japan
Prior art keywords
dielectric constant
film
high dielectric
manufacturing
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002234487A
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English (en)
Japanese (ja)
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JP2004079606A (ja
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Publication date
Application filed filed Critical
Priority to JP2002234487A priority Critical patent/JP2004079606A/ja
Priority claimed from JP2002234487A external-priority patent/JP2004079606A/ja
Publication of JP2004079606A publication Critical patent/JP2004079606A/ja
Publication of JP2004079606A5 publication Critical patent/JP2004079606A5/ja
Pending legal-status Critical Current

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JP2002234487A 2002-08-12 2002-08-12 高誘電率膜を有する半導体装置及びその製造方法 Pending JP2004079606A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002234487A JP2004079606A (ja) 2002-08-12 2002-08-12 高誘電率膜を有する半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002234487A JP2004079606A (ja) 2002-08-12 2002-08-12 高誘電率膜を有する半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2004079606A JP2004079606A (ja) 2004-03-11
JP2004079606A5 true JP2004079606A5 (zh) 2005-10-27

Family

ID=32019287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002234487A Pending JP2004079606A (ja) 2002-08-12 2002-08-12 高誘電率膜を有する半導体装置及びその製造方法

Country Status (1)

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JP (1) JP2004079606A (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006025350A1 (ja) 2004-08-30 2006-03-09 The University Of Tokyo 半導体装置及びその製造方法
US7518145B2 (en) 2007-01-25 2009-04-14 International Business Machines Corporation Integrated multiple gate dielectric composition and thickness semiconductor chip and method of manufacturing the same
KR101003452B1 (ko) 2008-12-30 2010-12-28 한양대학교 산학협력단 멀티 비트 강유전체 메모리 소자 및 그 제조방법
JP5444176B2 (ja) * 2010-09-14 2014-03-19 パナソニック株式会社 半導体装置
JP2014053571A (ja) 2012-09-10 2014-03-20 Toshiba Corp 強誘電体メモリ及びその製造方法
US11120884B2 (en) 2015-09-30 2021-09-14 Sunrise Memory Corporation Implementing logic function and generating analog signals using NOR memory strings
US11515309B2 (en) 2019-12-19 2022-11-29 Sunrise Memory Corporation Process for preparing a channel region of a thin-film transistor in a 3-dimensional thin-film transistor array
US11675500B2 (en) 2020-02-07 2023-06-13 Sunrise Memory Corporation High capacity memory circuit with low effective latency
TW202310429A (zh) 2021-07-16 2023-03-01 美商日升存儲公司 薄膜鐵電電晶體的三維記憶體串陣列

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