JP2004031960A - ポリッシング装置 - Google Patents

ポリッシング装置 Download PDF

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Publication number
JP2004031960A
JP2004031960A JP2003176833A JP2003176833A JP2004031960A JP 2004031960 A JP2004031960 A JP 2004031960A JP 2003176833 A JP2003176833 A JP 2003176833A JP 2003176833 A JP2003176833 A JP 2003176833A JP 2004031960 A JP2004031960 A JP 2004031960A
Authority
JP
Japan
Prior art keywords
wafer
membrane
polishing
support
polishing head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003176833A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004031960A5 (enExample
Inventor
Jae-Phil Boo
夫　在　弼
Jun-Gyu Ryu
柳　俊　圭
Hyun-Sung Lee
李　賢　星
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2004031960A publication Critical patent/JP2004031960A/ja
Publication of JP2004031960A5 publication Critical patent/JP2004031960A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2003176833A 2002-06-21 2003-06-20 ポリッシング装置 Pending JP2004031960A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2002-0034860A KR100495659B1 (ko) 2002-06-21 2002-06-21 화학적 기계적 평탄화 기계의 폴리싱 스테이션

Publications (2)

Publication Number Publication Date
JP2004031960A true JP2004031960A (ja) 2004-01-29
JP2004031960A5 JP2004031960A5 (enExample) 2007-07-26

Family

ID=29728732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003176833A Pending JP2004031960A (ja) 2002-06-21 2003-06-20 ポリッシング装置

Country Status (3)

Country Link
US (1) US6840846B2 (enExample)
JP (1) JP2004031960A (enExample)
KR (1) KR100495659B1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005123485A (ja) * 2003-10-17 2005-05-12 Ebara Corp 研磨装置
JP2015082586A (ja) * 2013-10-23 2015-04-27 株式会社荏原製作所 研磨装置および研磨方法
JP2017170533A (ja) * 2016-03-18 2017-09-28 株式会社荏原製作所 研磨装置および研磨方法
JP2018133512A (ja) * 2017-02-17 2018-08-23 株式会社東京精密 Ｃｍｐ装置及び方法

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3920720B2 (ja) * 2002-03-29 2007-05-30 株式会社荏原製作所 基板受渡し方法、基板受渡し機構及び基板研磨装置
JP2007165661A (ja) * 2005-12-14 2007-06-28 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
EP2024136A2 (en) * 2006-05-02 2009-02-18 Nxp B.V. Wafer de-chucking
JP5390807B2 (ja) 2008-08-21 2014-01-15 株式会社荏原製作所 研磨方法および装置
US9214372B2 (en) * 2008-08-28 2015-12-15 Tokyo Ohka Kogyo Co., Ltd. Substrate processing system, carrying device and coating device
US8919756B2 (en) * 2008-08-28 2014-12-30 Tokyo Ohka Kogyo Co., Ltd. Substrate processing system, carrying device, and coating device
US8425687B2 (en) * 2009-02-10 2013-04-23 Tel Nexx, Inc. Wetting a workpiece surface in a fluid-processing system
US8740668B2 (en) * 2010-03-12 2014-06-03 Wayne O. Duescher Three-point spindle-supported floating abrasive platen
US9138857B2 (en) 2010-08-05 2015-09-22 Hwatsing Technology Co., Ltd. Chemical mechanical polishing machine and chemical mechanical polishing apparatus comprising the same
CN102049730B (zh) * 2010-12-29 2012-02-15 清华大学 一种用于化学机械抛光设备的晶圆交换装置
WO2013119261A1 (en) * 2012-02-09 2013-08-15 Duescher Wayne O Coplanar alignment apparatus for rotary spindles
FR3006684B1 (fr) * 2013-06-07 2016-10-21 Commissariat Energie Atomique Procede de traitement d'une surface et dispositif mis en œuvre
KR102111592B1 (ko) * 2013-11-26 2020-06-08 주식회사 케이씨텍 분사식 웨이퍼의 웨팅 장치
CN107000158B (zh) 2014-12-19 2020-11-06 应用材料公司 用于化学机械抛光工具的部件
KR102385573B1 (ko) 2017-12-13 2022-04-12 삼성전자주식회사 로드 컵 및 이를 포함하는 화학기계적 연마 장치
JP7192761B2 (ja) * 2019-12-25 2022-12-20 株式会社Sumco 研磨装置への半導体ウェーハの受け渡し方法および半導体ウェーハの製造方法
US11484987B2 (en) 2020-03-09 2022-11-01 Applied Materials, Inc. Maintenance methods for polishing systems and articles related thereto
CN114473847B (zh) * 2021-12-29 2023-04-25 华海清科股份有限公司 一种旋转式晶圆交互系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3577355B2 (ja) * 1995-03-02 2004-10-13 不二越機械工業株式会社 ウェーハの研磨装置
US5738574A (en) * 1995-10-27 1998-04-14 Applied Materials, Inc. Continuous processing system for chemical mechanical polishing
KR100304706B1 (ko) * 1999-06-16 2001-11-01 윤종용 화학기계적 연마장치 및 연마 헤드 내부의 오염 물질 세척방법
KR100316712B1 (ko) * 1999-06-22 2001-12-12 윤종용 화학기계적 연마장치에 웨이퍼를 로딩/언로딩하기 위한 로드컵의 페디스탈
JP3662526B2 (ja) * 2001-07-26 2005-06-22 アプライド マテリアルズ インコーポレイテッド 基板の受け渡し方法および機械化学的研磨装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005123485A (ja) * 2003-10-17 2005-05-12 Ebara Corp 研磨装置
JP2015082586A (ja) * 2013-10-23 2015-04-27 株式会社荏原製作所 研磨装置および研磨方法
JP2017170533A (ja) * 2016-03-18 2017-09-28 株式会社荏原製作所 研磨装置および研磨方法
JP2018133512A (ja) * 2017-02-17 2018-08-23 株式会社東京精密 Ｃｍｐ装置及び方法
JP2021181157A (ja) * 2017-02-17 2021-11-25 株式会社東京精密 Ｃｍｐ装置及び方法
JP7271619B2 (ja) 2017-02-17 2023-05-11 株式会社東京精密 Ｃｍｐ装置及び方法

Also Published As

Publication number Publication date
US6840846B2 (en) 2005-01-11
KR20030097471A (ko) 2003-12-31
US20030236056A1 (en) 2003-12-25
KR100495659B1 (ko) 2005-06-16

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