KR100495659B1 - 화학적 기계적 평탄화 기계의 폴리싱 스테이션 - Google Patents

화학적 기계적 평탄화 기계의 폴리싱 스테이션 Download PDF

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Publication number
KR100495659B1
KR100495659B1 KR10-2002-0034860A KR20020034860A KR100495659B1 KR 100495659 B1 KR100495659 B1 KR 100495659B1 KR 20020034860 A KR20020034860 A KR 20020034860A KR 100495659 B1 KR100495659 B1 KR 100495659B1
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KR
South Korea
Prior art keywords
wafer
membrane
polishing
pedestal
transfer stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2002-0034860A
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English (en)
Korean (ko)
Other versions
KR20030097471A (ko
Inventor
부재필
유준규
이현성
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR10-2002-0034860A priority Critical patent/KR100495659B1/ko
Priority to US10/456,903 priority patent/US6840846B2/en
Priority to JP2003176833A priority patent/JP2004031960A/ja
Publication of KR20030097471A publication Critical patent/KR20030097471A/ko
Application granted granted Critical
Publication of KR100495659B1 publication Critical patent/KR100495659B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR10-2002-0034860A 2002-06-21 2002-06-21 화학적 기계적 평탄화 기계의 폴리싱 스테이션 Expired - Fee Related KR100495659B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR10-2002-0034860A KR100495659B1 (ko) 2002-06-21 2002-06-21 화학적 기계적 평탄화 기계의 폴리싱 스테이션
US10/456,903 US6840846B2 (en) 2002-06-21 2003-06-09 Polishing station of a chemical mechanical polishing apparatus
JP2003176833A JP2004031960A (ja) 2002-06-21 2003-06-20 ポリッシング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2002-0034860A KR100495659B1 (ko) 2002-06-21 2002-06-21 화학적 기계적 평탄화 기계의 폴리싱 스테이션

Publications (2)

Publication Number Publication Date
KR20030097471A KR20030097471A (ko) 2003-12-31
KR100495659B1 true KR100495659B1 (ko) 2005-06-16

Family

ID=29728732

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0034860A Expired - Fee Related KR100495659B1 (ko) 2002-06-21 2002-06-21 화학적 기계적 평탄화 기계의 폴리싱 스테이션

Country Status (3)

Country Link
US (1) US6840846B2 (enExample)
JP (1) JP2004031960A (enExample)
KR (1) KR100495659B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100091921A (ko) * 2009-02-10 2010-08-19 넥스 시스템즈 인코포레이티드 유체 프로세싱 시스템에서의 워크피스 표면의 웨팅

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3920720B2 (ja) * 2002-03-29 2007-05-30 株式会社荏原製作所 基板受渡し方法、基板受渡し機構及び基板研磨装置
JP2005123485A (ja) * 2003-10-17 2005-05-12 Ebara Corp 研磨装置
JP2007165661A (ja) * 2005-12-14 2007-06-28 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
EP2024136A2 (en) * 2006-05-02 2009-02-18 Nxp B.V. Wafer de-chucking
JP5390807B2 (ja) 2008-08-21 2014-01-15 株式会社荏原製作所 研磨方法および装置
US9214372B2 (en) * 2008-08-28 2015-12-15 Tokyo Ohka Kogyo Co., Ltd. Substrate processing system, carrying device and coating device
US8919756B2 (en) * 2008-08-28 2014-12-30 Tokyo Ohka Kogyo Co., Ltd. Substrate processing system, carrying device, and coating device
US8740668B2 (en) * 2010-03-12 2014-06-03 Wayne O. Duescher Three-point spindle-supported floating abrasive platen
US9138857B2 (en) 2010-08-05 2015-09-22 Hwatsing Technology Co., Ltd. Chemical mechanical polishing machine and chemical mechanical polishing apparatus comprising the same
CN102049730B (zh) * 2010-12-29 2012-02-15 清华大学 一种用于化学机械抛光设备的晶圆交换装置
WO2013119261A1 (en) * 2012-02-09 2013-08-15 Duescher Wayne O Coplanar alignment apparatus for rotary spindles
FR3006684B1 (fr) * 2013-06-07 2016-10-21 Commissariat Energie Atomique Procede de traitement d'une surface et dispositif mis en œuvre
JP2015082586A (ja) * 2013-10-23 2015-04-27 株式会社荏原製作所 研磨装置および研磨方法
KR102111592B1 (ko) * 2013-11-26 2020-06-08 주식회사 케이씨텍 분사식 웨이퍼의 웨팅 장치
CN107000158B (zh) 2014-12-19 2020-11-06 应用材料公司 用于化学机械抛光工具的部件
JP6427131B2 (ja) * 2016-03-18 2018-11-21 株式会社荏原製作所 研磨装置および研磨方法
JP6930839B2 (ja) * 2017-02-17 2021-09-01 株式会社東京精密 Ｃｍｐ装置及び方法
KR102385573B1 (ko) 2017-12-13 2022-04-12 삼성전자주식회사 로드 컵 및 이를 포함하는 화학기계적 연마 장치
JP7192761B2 (ja) * 2019-12-25 2022-12-20 株式会社Sumco 研磨装置への半導体ウェーハの受け渡し方法および半導体ウェーハの製造方法
US11484987B2 (en) 2020-03-09 2022-11-01 Applied Materials, Inc. Maintenance methods for polishing systems and articles related thereto
CN114473847B (zh) * 2021-12-29 2023-04-25 华海清科股份有限公司 一种旋转式晶圆交互系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08229807A (ja) * 1995-03-02 1996-09-10 Fujikoshi Mach Corp ウェーハの研磨装置
KR100304706B1 (ko) * 1999-06-16 2001-11-01 윤종용 화학기계적 연마장치 및 연마 헤드 내부의 오염 물질 세척방법
JP2003048157A (ja) * 2001-07-26 2003-02-18 Applied Materials Inc 基板の受け渡し方法および機械化学的研磨装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5738574A (en) * 1995-10-27 1998-04-14 Applied Materials, Inc. Continuous processing system for chemical mechanical polishing
KR100316712B1 (ko) * 1999-06-22 2001-12-12 윤종용 화학기계적 연마장치에 웨이퍼를 로딩/언로딩하기 위한 로드컵의 페디스탈

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08229807A (ja) * 1995-03-02 1996-09-10 Fujikoshi Mach Corp ウェーハの研磨装置
KR100304706B1 (ko) * 1999-06-16 2001-11-01 윤종용 화학기계적 연마장치 및 연마 헤드 내부의 오염 물질 세척방법
JP2003048157A (ja) * 2001-07-26 2003-02-18 Applied Materials Inc 基板の受け渡し方法および機械化学的研磨装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100091921A (ko) * 2009-02-10 2010-08-19 넥스 시스템즈 인코포레이티드 유체 프로세싱 시스템에서의 워크피스 표면의 웨팅
KR101651583B1 (ko) 2009-02-10 2016-08-26 텔 넥스 인코포레이티드 유체 프로세싱 시스템에서의 워크피스 표면의 웨팅

Also Published As

Publication number Publication date
JP2004031960A (ja) 2004-01-29
US6840846B2 (en) 2005-01-11
KR20030097471A (ko) 2003-12-31
US20030236056A1 (en) 2003-12-25

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