JP2004004348A5 - - Google Patents

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Publication number
JP2004004348A5
JP2004004348A5 JP2002160318A JP2002160318A JP2004004348A5 JP 2004004348 A5 JP2004004348 A5 JP 2004004348A5 JP 2002160318 A JP2002160318 A JP 2002160318A JP 2002160318 A JP2002160318 A JP 2002160318A JP 2004004348 A5 JP2004004348 A5 JP 2004004348A5
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JP
Japan
Prior art keywords
node
transistor
gate
drain
source
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JP2002160318A
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English (en)
Japanese (ja)
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JP4034122B2 (ja
JP2004004348A (ja
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Priority to JP2002160318A priority Critical patent/JP4034122B2/ja
Priority claimed from JP2002160318A external-priority patent/JP4034122B2/ja
Priority to US10/447,268 priority patent/US7005675B2/en
Publication of JP2004004348A publication Critical patent/JP2004004348A/ja
Publication of JP2004004348A5 publication Critical patent/JP2004004348A5/ja
Application granted granted Critical
Publication of JP4034122B2 publication Critical patent/JP4034122B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002160318A 2002-05-31 2002-05-31 発光装置及び素子基板 Expired - Fee Related JP4034122B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002160318A JP4034122B2 (ja) 2002-05-31 2002-05-31 発光装置及び素子基板
US10/447,268 US7005675B2 (en) 2002-05-31 2003-05-29 Light-emitting device, method for driving light-emitting device and element board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002160318A JP4034122B2 (ja) 2002-05-31 2002-05-31 発光装置及び素子基板

Publications (3)

Publication Number Publication Date
JP2004004348A JP2004004348A (ja) 2004-01-08
JP2004004348A5 true JP2004004348A5 (enExample) 2005-09-02
JP4034122B2 JP4034122B2 (ja) 2008-01-16

Family

ID=30429770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002160318A Expired - Fee Related JP4034122B2 (ja) 2002-05-31 2002-05-31 発光装置及び素子基板

Country Status (2)

Country Link
US (1) US7005675B2 (enExample)
JP (1) JP4034122B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW577179B (en) 2001-10-09 2004-02-21 Semiconductor Energy Lab Switching element, display device, light emitting device using the switching element, and semiconductor device
JP4202012B2 (ja) 2001-11-09 2008-12-24 株式会社半導体エネルギー研究所 発光装置及び電流記憶回路
JP4046267B2 (ja) * 2002-03-26 2008-02-13 株式会社半導体エネルギー研究所 表示装置
JP4034122B2 (ja) 2002-05-31 2008-01-16 株式会社半導体エネルギー研究所 発光装置及び素子基板
GB0227356D0 (en) * 2002-11-23 2002-12-31 Koninkl Philips Electronics Nv Colour active matrix electroluminescent display devices
KR100653846B1 (ko) * 2005-04-11 2006-12-05 실리콘 디스플레이 (주) 유기 발광 다이오드의 구동 회로 및 구동 방법
KR100547515B1 (ko) * 2005-07-27 2006-01-31 실리콘 디스플레이 (주) 유기발광다이오드 표시장치 및 그 구동방법
KR101324756B1 (ko) * 2005-10-18 2013-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 및 그의 구동방법
JP5013697B2 (ja) 2005-10-19 2012-08-29 三洋電機株式会社 表示装置
JP4939045B2 (ja) * 2005-11-30 2012-05-23 セイコーエプソン株式会社 発光装置および電子機器
US9792866B2 (en) * 2005-12-02 2017-10-17 Flextronics Computing Mauritus Ltd. Detecting and eliminating method for ghosting effect of LCD
US8786793B2 (en) * 2007-07-27 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP2010160526A (ja) * 2010-04-23 2010-07-22 Seiko Epson Corp 発光装置および電子機器
JP5141812B2 (ja) * 2011-11-09 2013-02-13 セイコーエプソン株式会社 発光装置および電子機器
KR102276118B1 (ko) * 2014-11-28 2021-07-13 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 유기 발광 표시 장치
KR102514412B1 (ko) * 2016-05-02 2023-03-28 삼성디스플레이 주식회사 반도체소자 및 이를 채용하는 표시장치

Family Cites Families (23)

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Publication number Priority date Publication date Assignee Title
US3898480A (en) * 1974-04-04 1975-08-05 Rockwell International Corp Multiphase logic circuit
JPS60241266A (ja) 1984-05-16 1985-11-30 Nippon Telegr & Teleph Corp <Ntt> 半導体装置及びその製造方法
US4917467A (en) * 1988-06-16 1990-04-17 Industrial Technology Research Institute Active matrix addressing arrangement for liquid crystal display
JPH0492475A (ja) 1990-08-08 1992-03-25 Nippon Telegr & Teleph Corp <Ntt> 相補型薄膜トランジスタ
US5258325A (en) * 1990-12-31 1993-11-02 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5376561A (en) 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
JPH04267551A (ja) 1991-02-22 1992-09-24 Casio Comput Co Ltd 薄膜トランジスタ
JPH10144928A (ja) * 1996-11-08 1998-05-29 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US6229506B1 (en) * 1997-04-23 2001-05-08 Sarnoff Corporation Active matrix light emitting diode pixel structure and concomitant method
JP2953465B1 (ja) 1998-08-14 1999-09-27 日本電気株式会社 定電流駆動回路
JP3686769B2 (ja) * 1999-01-29 2005-08-24 日本電気株式会社 有機ｅｌ素子駆動装置と駆動方法
JP3353731B2 (ja) 1999-02-16 2002-12-03 日本電気株式会社 有機エレクトロルミネッセンス素子駆動装置
JP3259774B2 (ja) 1999-06-09 2002-02-25 日本電気株式会社 画像表示方法および装置
JP4092857B2 (ja) * 1999-06-17 2008-05-28 ソニー株式会社 画像表示装置
JP2001147659A (ja) 1999-11-18 2001-05-29 Sony Corp 表示装置
JP4593740B2 (ja) * 2000-07-28 2010-12-08 ルネサスエレクトロニクス株式会社 表示装置
JP4014831B2 (ja) * 2000-09-04 2007-11-28 株式会社半導体エネルギー研究所 Ｅｌ表示装置及びその駆動方法
SG115435A1 (en) * 2000-12-28 2005-10-28 Semiconductor Energy Lab Luminescent device
US7199515B2 (en) * 2001-06-01 2007-04-03 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and light emitting device using the element
TW577179B (en) * 2001-10-09 2004-02-21 Semiconductor Energy Lab Switching element, display device, light emitting device using the switching element, and semiconductor device
JP4202012B2 (ja) * 2001-11-09 2008-12-24 株式会社半導体エネルギー研究所 発光装置及び電流記憶回路
JP4046267B2 (ja) * 2002-03-26 2008-02-13 株式会社半導体エネルギー研究所 表示装置
JP4034122B2 (ja) 2002-05-31 2008-01-16 株式会社半導体エネルギー研究所 発光装置及び素子基板

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