JP2003524799A5 - - Google Patents
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- Publication number
- JP2003524799A5 JP2003524799A5 JP2001544083A JP2001544083A JP2003524799A5 JP 2003524799 A5 JP2003524799 A5 JP 2003524799A5 JP 2001544083 A JP2001544083 A JP 2001544083A JP 2001544083 A JP2001544083 A JP 2001544083A JP 2003524799 A5 JP2003524799 A5 JP 2003524799A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/455,872 | 1999-12-07 | ||
| US09/455,872 US6365322B1 (en) | 1999-12-07 | 1999-12-07 | Photoresist composition for deep UV radiation |
| PCT/EP2000/011495 WO2001042853A2 (en) | 1999-12-07 | 2000-11-18 | Photoresist composition for deep uv radiation |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003524799A JP2003524799A (ja) | 2003-08-19 |
| JP2003524799A5 true JP2003524799A5 (enExample) | 2010-11-18 |
| JP4629944B2 JP4629944B2 (ja) | 2011-02-09 |
Family
ID=23810591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001544083A Expired - Fee Related JP4629944B2 (ja) | 1999-12-07 | 2000-11-18 | 深紫外線用のフォトレジスト組成物 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6365322B1 (enExample) |
| EP (1) | EP1240553B1 (enExample) |
| JP (1) | JP4629944B2 (enExample) |
| KR (1) | KR100705373B1 (enExample) |
| CN (1) | CN1203373C (enExample) |
| AT (1) | ATE434202T1 (enExample) |
| DE (1) | DE60042422D1 (enExample) |
| MY (1) | MY125946A (enExample) |
| TW (1) | TW573213B (enExample) |
| WO (1) | WO2001042853A2 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3509760B2 (ja) * | 2001-02-08 | 2004-03-22 | 株式会社半導体先端テクノロジーズ | 半導体装置の製造方法 |
| US6586560B1 (en) * | 2001-09-18 | 2003-07-01 | Microchem Corp. | Alkaline soluble maleimide-containing polymers |
| US7070914B2 (en) * | 2002-01-09 | 2006-07-04 | Az Electronic Materials Usa Corp. | Process for producing an image using a first minimum bottom antireflective coating composition |
| US20030215736A1 (en) * | 2002-01-09 | 2003-11-20 | Oberlander Joseph E. | Negative-working photoimageable bottom antireflective coating |
| US7214465B2 (en) | 2002-01-10 | 2007-05-08 | Fujifilm Corporation | Positive photosensitive composition |
| WO2003073169A2 (en) * | 2002-02-21 | 2003-09-04 | Honeywell International Inc. | Fluorinated molecules and methods of making and using same |
| WO2003095505A1 (en) * | 2002-05-07 | 2003-11-20 | Honeywell International Inc. | Fluorinated polymers |
| US7208249B2 (en) * | 2002-09-30 | 2007-04-24 | Applied Materials, Inc. | Method of producing a patterned photoresist used to prepare high performance photomasks |
| US20040091813A1 (en) * | 2002-11-05 | 2004-05-13 | Honeywell International Inc. | Fluorinated polymers |
| US7358408B2 (en) * | 2003-05-16 | 2008-04-15 | Az Electronic Materials Usa Corp. | Photoactive compounds |
| KR100586165B1 (ko) * | 2003-12-30 | 2006-06-07 | 동부일렉트로닉스 주식회사 | 바닥 반사 방지 코팅 방법 |
| US7473512B2 (en) * | 2004-03-09 | 2009-01-06 | Az Electronic Materials Usa Corp. | Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
| KR100887202B1 (ko) * | 2004-04-27 | 2009-03-06 | 도오꾜오까고오교 가부시끼가이샤 | 액침 노광 프로세스용 레지스트 보호막 형성용 재료, 및 이보호막을 이용한 레지스트 패턴 형성 방법 |
| US20060008731A1 (en) * | 2004-07-09 | 2006-01-12 | Michael Van Der Puy | Novel photoresist monomers and polymers |
| US20060008730A1 (en) * | 2004-07-09 | 2006-01-12 | Puy Michael V D | Monomers for photoresists bearing acid-labile groups of reduced optical density |
| JP4368267B2 (ja) * | 2004-07-30 | 2009-11-18 | 東京応化工業株式会社 | レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法 |
| US7595141B2 (en) * | 2004-10-26 | 2009-09-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
| JP4830442B2 (ja) * | 2005-10-19 | 2011-12-07 | Ｊｓｒ株式会社 | ポジ型感放射線性樹脂組成物 |
| JP4890153B2 (ja) * | 2006-08-11 | 2012-03-07 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
| US7923200B2 (en) * | 2007-04-09 | 2011-04-12 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern comprising a lactam |
| JP5069494B2 (ja) * | 2007-05-01 | 2012-11-07 | ＡｚエレクトロニックマテリアルズＩｐ株式会社 | 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法 |
| JP5401051B2 (ja) * | 2008-05-12 | 2014-01-29 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法および新規な化合物 |
| US7745077B2 (en) | 2008-06-18 | 2010-06-29 | Az Electronic Materials Usa Corp. | Composition for coating over a photoresist pattern |
| US20100136477A1 (en) * | 2008-12-01 | 2010-06-03 | Ng Edward W | Photosensitive Composition |
| US8614047B2 (en) | 2011-08-26 | 2013-12-24 | International Business Machines Corporation | Photodecomposable bases and photoresist compositions |
| CN103012227A (zh) * | 2013-01-04 | 2013-04-03 | 同济大学 | 一种高光生酸量子产率硫鎓盐类光生酸剂、制备方法及其应用 |
| CN113717314B (zh) * | 2021-08-26 | 2023-09-22 | 江苏集萃光敏电子材料研究所有限公司 | 一种光敏成膜树脂、光刻胶组合物及其制备方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
| EP0440374B1 (en) | 1990-01-30 | 1997-04-16 | Wako Pure Chemical Industries Ltd | Chemical amplified resist material |
| KR100355254B1 (en) | 1993-02-15 | 2003-03-31 | Clariant Finance Bvi Ltd | Positive type radiation-sensitive mixture |
| US5663035A (en) | 1994-04-13 | 1997-09-02 | Hoechst Japan Limited | Radiation-sensitive mixture comprising a basic iodonium compound |
| US5466653A (en) * | 1994-06-29 | 1995-11-14 | E. I. Du Pont De Nemours And Company | Method for preparing negative-working wash-off relief images and non-photosensitive elements for use therein |
| US5523453A (en) | 1995-03-22 | 1996-06-04 | E. I. Du Pont De Nemours And Company | Process for hydrocyanation |
| JPH08262720A (ja) | 1995-03-28 | 1996-10-11 | Hoechst Ind Kk | 可塑剤を含む放射線感応性組成物 |
| JP3804138B2 (ja) | 1996-02-09 | 2006-08-02 | Ｊｓｒ株式会社 | ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物 |
| JP3962432B2 (ja) | 1996-03-07 | 2007-08-22 | 住友ベークライト株式会社 | 酸不安定ペンダント基を持つ多環式ポリマーからなるフォトレジスト組成物 |
| US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
| US5879857A (en) | 1997-02-21 | 1999-03-09 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
| JP3808140B2 (ja) * | 1996-09-10 | 2006-08-09 | Ａｚエレクトロニックマテリアルズ株式会社 | 新規酸感応性基で保護されたヒドロキシスチレン重合体およびこれらを含む放射線感応性材料 |
| KR100265597B1 (ko) | 1996-12-30 | 2000-09-15 | 김영환 | Arf 감광막 수지 및 그 제조방법 |
| KR100551653B1 (ko) | 1997-08-18 | 2006-05-25 | 제이에스알 가부시끼가이샤 | 감방사선성수지조성물 |
| JP3676918B2 (ja) * | 1997-10-09 | 2005-07-27 | 富士通株式会社 | レジスト材料及びレジストパターンの形成方法 |
| KR100321080B1 (ko) | 1997-12-29 | 2002-11-22 | 주식회사 하이닉스반도체 | 공중합체수지와이의제조방법및이수지를이용한포토레지스트 |
| KR100292406B1 (ko) * | 1998-06-11 | 2001-07-12 | 윤종용 | 감광성중합체,용해억제제및이들을포함하는화학증폭형포토레지스트조성물 |
| NL1010155C1 (nl) | 1998-09-23 | 2000-03-24 | Albertus Wolbers | Raambedekking. |
| KR100271419B1 (ko) * | 1998-09-23 | 2001-03-02 | 박찬구 | 화학증폭형 레지스트 제조용 중합체 및 이를 함유하는 레지스트조성물 |
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1999
- 1999-12-07 US US09/455,872 patent/US6365322B1/en not_active Expired - Lifetime
-
2000
- 2000-11-18 EP EP00981273A patent/EP1240553B1/en not_active Expired - Lifetime
- 2000-11-18 AT AT00981273T patent/ATE434202T1/de not_active IP Right Cessation
- 2000-11-18 DE DE60042422T patent/DE60042422D1/de not_active Expired - Lifetime
- 2000-11-18 WO PCT/EP2000/011495 patent/WO2001042853A2/en not_active Ceased
- 2000-11-18 JP JP2001544083A patent/JP4629944B2/ja not_active Expired - Fee Related
- 2000-11-18 CN CNB008167796A patent/CN1203373C/zh not_active Expired - Fee Related
- 2000-11-18 KR KR1020027007254A patent/KR100705373B1/ko not_active Expired - Fee Related
- 2000-11-22 TW TW89124774A patent/TW573213B/zh not_active IP Right Cessation
- 2000-12-05 MY MYPI20005711A patent/MY125946A/en unknown