JP2003519433A - 終点検出のために外部光源を使用した方法及び装置 - Google Patents

終点検出のために外部光源を使用した方法及び装置

Info

Publication number
JP2003519433A
JP2003519433A JP2000519287A JP2000519287A JP2003519433A JP 2003519433 A JP2003519433 A JP 2003519433A JP 2000519287 A JP2000519287 A JP 2000519287A JP 2000519287 A JP2000519287 A JP 2000519287A JP 2003519433 A JP2003519433 A JP 2003519433A
Authority
JP
Japan
Prior art keywords
light
substrate
intensity
wavelength
reflected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000519287A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003519433A5 (https=
Inventor
アール． ジョンソン、デイビッド
リー． フィリップス、ジョー
シー． ニールセン、トッド
ジェイ． ハットフィールド、ロバート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of JP2003519433A publication Critical patent/JP2003519433A/ja
Publication of JP2003519433A5 publication Critical patent/JP2003519433A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6489—Photoluminescence of semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2000519287A 1997-11-04 1998-10-30 終点検出のために外部光源を使用した方法及び装置 Pending JP2003519433A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/963,508 1997-11-04
US08/963,508 US5969805A (en) 1997-11-04 1997-11-04 Method and apparatus employing external light source for endpoint detection
PCT/US1998/023137 WO1999023472A1 (en) 1997-11-04 1998-10-30 Method and apparatus employing external light source for endpoint detection

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007075027A Division JP2007189248A (ja) 1997-11-04 2007-03-22 終点検出のために外部光源を使用する方法及び装置

Publications (2)

Publication Number Publication Date
JP2003519433A true JP2003519433A (ja) 2003-06-17
JP2003519433A5 JP2003519433A5 (https=) 2005-12-22

Family

ID=25507341

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000519287A Pending JP2003519433A (ja) 1997-11-04 1998-10-30 終点検出のために外部光源を使用した方法及び装置
JP2007075027A Pending JP2007189248A (ja) 1997-11-04 2007-03-22 終点検出のために外部光源を使用する方法及び装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2007075027A Pending JP2007189248A (ja) 1997-11-04 2007-03-22 終点検出のために外部光源を使用する方法及び装置

Country Status (5)

Country Link
US (3) US5969805A (https=)
EP (1) EP1029231A4 (https=)
JP (2) JP2003519433A (https=)
KR (1) KR100402508B1 (https=)
WO (1) WO1999023472A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013211429A (ja) * 2012-03-30 2013-10-10 Chube Univ 半導体基材の表面モニター方法及び表面モニター装置

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US6174801B1 (en) * 1999-03-05 2001-01-16 Taiwan Semiconductor Manufacturing Company E-beam direct writing to pattern step profiles of dielectric layers applied to fill poly via with poly line, contact with metal line, and metal via with metal line
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US6381021B1 (en) * 2000-06-22 2002-04-30 Applied Materials, Inc. Method and apparatus for measuring reflectivity of deposited films
EP1178300A1 (en) * 2000-08-04 2002-02-06 Infineon Technologies SC300 GmbH & Co. KG Arrangement and method for removing an organic material from a semiconductor device
US6491569B2 (en) 2001-04-19 2002-12-10 Speedfam-Ipec Corporation Method and apparatus for using optical reflection data to obtain a continuous predictive signal during CMP
US7196800B1 (en) * 2001-07-26 2007-03-27 Advanced Micro Devices, Inc. Semiconductor die analysis as a function of optical reflections from the die
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US9043743B2 (en) 2013-10-22 2015-05-26 International Business Machines Corporation Automated residual material detection
CN104733336B (zh) * 2013-12-19 2017-11-03 中微半导体设备(上海)有限公司 等离子体去胶工艺的终点检测系统和方法
KR20200061982A (ko) * 2018-11-26 2020-06-03 조해연 광학 측정 장치, 광학 측정 장치를 포함하는 화학물질 공급 장치 및 광학 측정 장치를 포함하는 화학물질을 이용하는 공정 장치
KR102872758B1 (ko) 2020-12-08 2025-10-21 삼성전자주식회사 플라즈마 처리 장치, 이를 이용한 반도체 소자 제조 공정의 모니터링 방법 및 모니터링 방법을 포함하는 반도체 소자의 제조 방법
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013211429A (ja) * 2012-03-30 2013-10-10 Chube Univ 半導体基材の表面モニター方法及び表面モニター装置

Also Published As

Publication number Publication date
EP1029231A4 (en) 2005-08-17
US20010046043A1 (en) 2001-11-29
KR20010031829A (ko) 2001-04-16
JP2007189248A (ja) 2007-07-26
US5969805A (en) 1999-10-19
US6509960B2 (en) 2003-01-21
KR100402508B1 (ko) 2003-10-22
WO1999023472A1 (en) 1999-05-14
US20010009459A1 (en) 2001-07-26
EP1029231A1 (en) 2000-08-23
US6429928B2 (en) 2002-08-06

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