KR100402508B1 - 종점 검출을 위해 외부 광원을 사용하는 방법 및 장치 - Google Patents

종점 검출을 위해 외부 광원을 사용하는 방법 및 장치 Download PDF

Info

Publication number
KR100402508B1
KR100402508B1 KR10-2000-7004900A KR20007004900A KR100402508B1 KR 100402508 B1 KR100402508 B1 KR 100402508B1 KR 20007004900 A KR20007004900 A KR 20007004900A KR 100402508 B1 KR100402508 B1 KR 100402508B1
Authority
KR
South Korea
Prior art keywords
substrate
light
photo
resist material
stripping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2000-7004900A
Other languages
English (en)
Korean (ko)
Other versions
KR20010031829A (ko
Inventor
데이비드 알. 존슨
조 리 필립스
토드 씨. 니엘센
로버트 제이. 하트필드
Original Assignee
마이크론 테크놀로지 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마이크론 테크놀로지 인코포레이티드 filed Critical 마이크론 테크놀로지 인코포레이티드
Publication of KR20010031829A publication Critical patent/KR20010031829A/ko
Application granted granted Critical
Publication of KR100402508B1 publication Critical patent/KR100402508B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6489—Photoluminescence of semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR10-2000-7004900A 1997-11-04 1998-10-30 종점 검출을 위해 외부 광원을 사용하는 방법 및 장치 Expired - Fee Related KR100402508B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/963,508 1997-11-04
US08/963,508 US5969805A (en) 1997-11-04 1997-11-04 Method and apparatus employing external light source for endpoint detection
US8/963,508 1997-11-04

Publications (2)

Publication Number Publication Date
KR20010031829A KR20010031829A (ko) 2001-04-16
KR100402508B1 true KR100402508B1 (ko) 2003-10-22

Family

ID=25507341

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-7004900A Expired - Fee Related KR100402508B1 (ko) 1997-11-04 1998-10-30 종점 검출을 위해 외부 광원을 사용하는 방법 및 장치

Country Status (5)

Country Link
US (3) US5969805A (https=)
EP (1) EP1029231A4 (https=)
JP (2) JP2003519433A (https=)
KR (1) KR100402508B1 (https=)
WO (1) WO1999023472A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020111430A1 (ko) * 2018-11-26 2020-06-04 조해연 광학 측정 장치, 광학 측정 장치를 포함하는 화학물질 공급 장치 및 광학 측정 장치를 포함하는 화학물질을 이용하는 공정 장치

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5969805A (en) 1997-11-04 1999-10-19 Micron Technology, Inc. Method and apparatus employing external light source for endpoint detection
US6117348A (en) * 1998-06-03 2000-09-12 Taiwan Semiconductor Manufacturing Company, Ltd Real time monitoring of plasma etching process
US6174801B1 (en) * 1999-03-05 2001-01-16 Taiwan Semiconductor Manufacturing Company E-beam direct writing to pattern step profiles of dielectric layers applied to fill poly via with poly line, contact with metal line, and metal via with metal line
US6451158B1 (en) * 1999-12-21 2002-09-17 Lam Research Corporation Apparatus for detecting the endpoint of a photoresist stripping process
US6707540B1 (en) * 1999-12-23 2004-03-16 Kla-Tencor Corporation In-situ metalization monitoring using eddy current and optical measurements
FR2809491B1 (fr) * 2000-05-26 2008-07-04 Production Rech S Appliquees Procede et appareil de metrologie ellipsometrique pour echantillon contenu dans une chambre ou analogue
US6612901B1 (en) 2000-06-07 2003-09-02 Micron Technology, Inc. Apparatus for in-situ optical endpointing of web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6381021B1 (en) * 2000-06-22 2002-04-30 Applied Materials, Inc. Method and apparatus for measuring reflectivity of deposited films
EP1178300A1 (en) * 2000-08-04 2002-02-06 Infineon Technologies SC300 GmbH & Co. KG Arrangement and method for removing an organic material from a semiconductor device
US6491569B2 (en) 2001-04-19 2002-12-10 Speedfam-Ipec Corporation Method and apparatus for using optical reflection data to obtain a continuous predictive signal during CMP
US7196800B1 (en) * 2001-07-26 2007-03-27 Advanced Micro Devices, Inc. Semiconductor die analysis as a function of optical reflections from the die
EP1283546A1 (en) * 2001-08-08 2003-02-12 Infineon Technologies AG Method for detecting removal of organic material from a semiconductor device in a manufacturing process
KR100422448B1 (ko) * 2001-10-11 2004-03-11 삼성전자주식회사 식각장치의 램프 교체 경보장치 및 그의방법
KR100455437B1 (ko) * 2001-12-29 2004-11-06 엘지.필립스 엘시디 주식회사 유리기판의 효율이 향상된 액정표시소자
US7341502B2 (en) 2002-07-18 2008-03-11 Micron Technology, Inc. Methods and systems for planarizing workpieces, e.g., microelectronic workpieces
US6939761B2 (en) 2002-11-22 2005-09-06 Micron Technology, Inc. Methods of forming buried bit line DRAM circuitry
US20050070103A1 (en) * 2003-09-29 2005-03-31 Applied Materials, Inc. Method and apparatus for endpoint detection during an etch process
US7158221B2 (en) * 2003-12-23 2007-01-02 Applied Materials, Inc. Method and apparatus for performing limited area spectral analysis
TR201802704T4 (tr) 2005-10-11 2018-03-21 Bt Imaging Pty Ltd Dolaylı bant aralığı yarı iletken yapısının denetlenmesi için metot ve sistem.
KR100660332B1 (ko) * 2005-12-28 2006-12-22 동부일렉트로닉스 주식회사 이미지 센서의 제조방법
JP2007313499A (ja) * 2006-04-27 2007-12-06 Seiko Epson Corp パターン形成方法、液滴吐出装置及び回路モジュール
US8076628B2 (en) 2008-09-25 2011-12-13 Apple Inc. Ambient light sensor with reduced sensitivity to noise from infrared sources
US8908161B2 (en) * 2011-08-25 2014-12-09 Palo Alto Research Center Incorporated Removing aluminum nitride sections
US8709268B2 (en) 2011-11-14 2014-04-29 Spts Technologies Limited Etching apparatus and methods
JP5911351B2 (ja) * 2012-03-30 2016-04-27 学校法人中部大学 半導体基板の表面モニター方法
CN102636491B (zh) * 2012-04-17 2013-10-30 南京邮电大学 基于表面等离子体波的半导体缺陷检测方法
US9043743B2 (en) 2013-10-22 2015-05-26 International Business Machines Corporation Automated residual material detection
CN104733336B (zh) * 2013-12-19 2017-11-03 中微半导体设备(上海)有限公司 等离子体去胶工艺的终点检测系统和方法
KR102872758B1 (ko) 2020-12-08 2025-10-21 삼성전자주식회사 플라즈마 처리 장치, 이를 이용한 반도체 소자 제조 공정의 모니터링 방법 및 모니터링 방법을 포함하는 반도체 소자의 제조 방법
US12461034B2 (en) * 2023-09-29 2025-11-04 Tokyo Electron Limited In-situ fluorescence-based chamber and wafer monitoring

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198261A (en) * 1977-12-05 1980-04-15 Gould Inc. Method for end point detection during plasma etching
US4208240A (en) * 1979-01-26 1980-06-17 Gould Inc. Method and apparatus for controlling plasma etching
JPS56108234A (en) * 1980-01-31 1981-08-27 Fujitsu Ltd Etching treatment method
US4377436A (en) * 1980-05-13 1983-03-22 Bell Telephone Laboratories, Incorporated Plasma-assisted etch process with endpoint detection
JPS5751265A (en) * 1980-09-10 1982-03-26 Hitachi Ltd Microwave plasma etching device
US4500918A (en) 1981-10-19 1985-02-19 Canon Kabushiki Kaisha Original reading apparatus
US4482424A (en) * 1983-05-06 1984-11-13 At&T Bell Laboratories Method for monitoring etching of resists by monitoring the flouresence of the unetched material
US4586822A (en) * 1983-06-21 1986-05-06 Nippon Kogaku K. K. Inspecting method for mask for producing semiconductor device
JPS6130036A (ja) * 1984-07-23 1986-02-12 Fujitsu Ltd マイクロ波プラズマ処理装置
US4800282A (en) * 1985-02-07 1989-01-24 Sharp Kabushiki Kaisha Apparatus and method for detecting residual organic compounds
US4713140A (en) * 1987-03-02 1987-12-15 International Business Machines Corporation Laser luminescence monitor for material thickness
US4846920A (en) * 1987-12-09 1989-07-11 International Business Machine Corporation Plasma amplified photoelectron process endpoint detection apparatus
EP0368732B1 (en) * 1988-11-04 1995-06-28 Fujitsu Limited Process for forming resist mask pattern
JPH03155112A (ja) * 1989-11-13 1991-07-03 Nikon Corp 露光条件測定方法
JPH03165518A (ja) * 1989-11-24 1991-07-17 Nec Corp フォトレジスト用アッシング装置
JPH03194917A (ja) * 1989-12-22 1991-08-26 Nec Corp プラズマ方式のホトレジスト剥離方法
US5162867A (en) * 1990-01-26 1992-11-10 Canon Kabushiki Kaisha Surface condition inspection method and apparatus using image transfer
JP3469251B2 (ja) * 1990-02-14 2003-11-25 株式会社東芝 半導体装置の製造方法
JP3066762B2 (ja) * 1990-10-16 2000-07-17 コニカ株式会社 画像形成装置
JPH04164316A (ja) * 1990-10-29 1992-06-10 Nec Corp ホトレジスト除去装置
US5362356A (en) * 1990-12-20 1994-11-08 Lsi Logic Corporation Plasma etching process control
JPH04280650A (ja) * 1991-03-08 1992-10-06 Fujitsu Ltd 半導体装置の製造方法
US5176790A (en) * 1991-09-25 1993-01-05 Applied Materials, Inc. Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metal
DE4132558C1 (https=) * 1991-09-30 1992-12-03 Secon Halbleiterproduktionsgeraete Ges.M.B.H., Wien, At
US5264328A (en) * 1992-04-24 1993-11-23 International Business Machines Corporation Resist development endpoint detection for X-ray lithography
US5308447A (en) 1992-06-09 1994-05-03 Luxtron Corporation Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across the layer
JP3111661B2 (ja) * 1992-07-24 2000-11-27 ソニー株式会社 ドライエッチング方法
JP3165518B2 (ja) 1992-08-31 2001-05-14 三菱重工業株式会社 酸洗シミュレーション装置
US5312717A (en) * 1992-09-24 1994-05-17 International Business Machines Corporation Residue free vertical pattern transfer with top surface imaging resists
US5444265A (en) * 1993-02-23 1995-08-22 Lsi Logic Corporation Method and apparatus for detecting defective semiconductor wafers during fabrication thereof
US5350236A (en) * 1993-03-08 1994-09-27 Micron Semiconductor, Inc. Method for repeatable temperature measurement using surface reflectivity
US5362969A (en) * 1993-04-23 1994-11-08 Luxtron Corporation Processing endpoint detecting technique and detector structure using multiple radiation sources or discrete detectors
WO1994025977A1 (en) * 1993-04-28 1994-11-10 Applied Materials, Inc. Method and apparatus for etchback endpoint detection
JP3279038B2 (ja) * 1994-01-31 2002-04-30 ソニー株式会社 プラズマ装置およびこれを用いたプラズマ処理方法
US5900103A (en) 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US5483568A (en) * 1994-11-03 1996-01-09 Kabushiki Kaisha Toshiba Pad condition and polishing rate monitor using fluorescence
JPH08174411A (ja) * 1994-12-22 1996-07-09 Ebara Corp ポリッシング装置
JPH08220010A (ja) 1995-02-17 1996-08-30 Nippon Steel Corp 半導体処理装置
US5663797A (en) * 1996-05-16 1997-09-02 Micron Technology, Inc. Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers
US5969805A (en) * 1997-11-04 1999-10-19 Micron Technology, Inc. Method and apparatus employing external light source for endpoint detection
JP3194917B2 (ja) 1999-08-10 2001-08-06 トーワ株式会社 樹脂封止方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020111430A1 (ko) * 2018-11-26 2020-06-04 조해연 광학 측정 장치, 광학 측정 장치를 포함하는 화학물질 공급 장치 및 광학 측정 장치를 포함하는 화학물질을 이용하는 공정 장치

Also Published As

Publication number Publication date
EP1029231A4 (en) 2005-08-17
US20010046043A1 (en) 2001-11-29
KR20010031829A (ko) 2001-04-16
JP2007189248A (ja) 2007-07-26
US5969805A (en) 1999-10-19
JP2003519433A (ja) 2003-06-17
US6509960B2 (en) 2003-01-21
WO1999023472A1 (en) 1999-05-14
US20010009459A1 (en) 2001-07-26
EP1029231A1 (en) 2000-08-23
US6429928B2 (en) 2002-08-06

Similar Documents

Publication Publication Date Title
KR100402508B1 (ko) 종점 검출을 위해 외부 광원을 사용하는 방법 및 장치
US6448097B1 (en) Measure fluorescence from chemical released during trim etch
JP3399040B2 (ja) 半導体製造装置及び半導体製造方法
US6369887B2 (en) Method and apparatus for automated, in situ material detection using filtered fluoresced, reflected, or absorbed light
CN100373557C (zh) 蚀刻量检测方法、蚀刻方法和蚀刻装置
US7253901B2 (en) Laser-based cleaning device for film analysis tool
EP0727715A1 (en) Method and arrangement for characterizing micro-size patterns
KR20040076218A (ko) 리소그래피 장치의 구성요소 표면의 오염을 측정하는 장치및 방법
KR20110069083A (ko) Ｅｕｖ 리소그래피 장치 및 광학 요소 처리 방법
US6449038B1 (en) Detecting a process endpoint from a change in reflectivity
TWI512393B (zh) 光罩製造應用中之用於蝕刻石英基板的裝置及方法
KR20020073560A (ko) 환경 모니터 방법 및 장치와 반도체 제조 장치
US20240003809A1 (en) Metrology apparatus and metrology methods based on high harmonic generation from a diffractive structure
EP4006641A1 (en) Metrology apparatus based on high harmonic generation and associated method
US7102737B2 (en) Method and apparatus for automated, in situ material detection using filtered fluoresced, reflected, or absorbed light
JP2005094018A (ja) リソグラフィック装置及びデバイス製造方法
KR100529647B1 (ko) 웨이퍼 상의 파티클 검출장치 및 검출방법
US20110116705A1 (en) Method of measuring focal variations of a photolithography apparatus and a method of fabricating a semiconductor device using the focal variations measuring method
TW202401138A (zh) 用於過濾量測輻射之設備及方法
JPH03165518A (ja) フォトレジスト用アッシング装置
JP2006503419A (ja) 感光性レジストに覆われた物体を検査するための照射装置
KR20250081499A (ko) 플라즈마 발생 챔버 내부 플라즈마 광 신호 수집 및 웨이퍼 박막 두께 측정 시스템
JP2004200495A (ja) 反射防止膜改質装置および反射防止膜改質方法
JPH03194917A (ja) プラズマ方式のホトレジスト剥離方法
JPH0430513A (ja) 縮少投影露光装置

Legal Events

Date Code Title Description
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20090925

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20101009

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20101009

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000