US20010046043A1 - Method and apparatus employing external light source for endpoint detection - Google Patents
Method and apparatus employing external light source for endpoint detection Download PDFInfo
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- US20010046043A1 US20010046043A1 US09/399,242 US39924299A US2001046043A1 US 20010046043 A1 US20010046043 A1 US 20010046043A1 US 39924299 A US39924299 A US 39924299A US 2001046043 A1 US2001046043 A1 US 2001046043A1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6489—Photoluminescence of semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
Definitions
- This invention relates generally to the manufacture of semiconductor devices prepared by a method including photolithography. More particularly, this invention pertains to a method for inspecting semiconductor substrates to determine the completion of stripping (“endpoint”) during a plasma stripping process to remove a photo-resist material from a semiconductor substrate surface after photolithography.
- Semiconductor chips are produced in a multi-step process by which a plurality of identical electronic circuits is typically formed on a semiconductor substrate, such as a silicon wafer. The semiconductor substrate is then subdivided (diced) into individual chips which are further processed into packaged semiconductor devices or otherwise secured in higher-level packaging for ultimate use.
- the electronic circuits are generally patterned into a semiconductor substrate by a series of steps including photolithography.
- a photo-resist material is coated onto the semiconductor substrate surface.
- the temperature of a semiconductor substrate during the application of a material can be monitored by measuring light reflected from a surface of the semiconductor substrate, such that the material and semiconductor substrate are not overheated.
- the photo-resist material After the photo-resist material has been coated on the semiconductor substrate surface, it is selectively exposed to a radiation source, such as by the passage of radiation (i.e., light, e-beam, or X-rays) through a mask having a desired aperture pattern defined therein. If a positive photo-resist material is used, the exposure to the radiation source converts the positive photo-resist material to a more soluble state which allows the exposed positive photo-resist to be removed with a solvent, thereby leaving a pattern substantially identical to the mask.
- a radiation source such as by the passage of radiation (i.e., light, e-beam, or X-rays) through a mask having a desired aperture pattern defined therein. If a positive photo-resist material is used, the exposure to the radiation source converts the positive photo-resist material to a more soluble state which allows the exposed positive photo-resist to be removed with a solvent, thereby leaving a pattern substantially identical to
- the exposure to the radiation source converts the negative photo-resist material to a less soluble state which allows the unexposed positive photo-resist to be removed with a solvent, thereby leaving a pattern substantially identical to the openings in the mask.
- the photolithographic process results in a photo-resist pattern which will become the electronic circuit pattern on a semiconductor substrate.
- the semiconductor substrate is subjected to further processing steps which may include doping, etching, and/or deposition of conductive materials in unprotected areas, i.e., areas devoid of photo-resist material.
- processing steps may include doping, etching, and/or deposition of conductive materials in unprotected areas, i.e., areas devoid of photo-resist material.
- the semiconductor substrate is subjected to a stripping step to remove the photo-resist material remaining on the semiconductor substrate.
- a plasma etching process comprises 1) at least one reactive species is generated in a plasma from a bulk gas, 2) the reactive species diffuses to a surface of a material being etched, 3) the reactive species is absorbed on the surface of the material being etched, 4) a chemical reaction occurs which results in the formation of at least one volatile by-product, 5) the by-product is desorbed from the surface of the material being etched, and 6) the desorbed by-product diffuses into the bulk gas.
- a plasma etching process comprises 1) at least one reactive species is generated in a plasma from a bulk gas, 2) the reactive species diffuses to a surface of a material being etched, 3) the reactive species is absorbed on the surface of the material being etched, 4) a chemical reaction occurs which results in the formation of at least one volatile by-product, 5) the by-product is desorbed from the surface of the material being etched, and 6) the desorbed by-product diffuses into the bulk gas.
- the materials used as photo-resist are generally organic polymers, such as phenol-formaldehyde, polyisoprene, poly-methyl methacrylate, poly-methyl isopropenyl ketone, poly-butene-1-sulfone, poly-trifluoroethyl chloroacrylate, and the like.
- Such photo-resist materials are generally etched in plasmas containing pure oxygen to produce species that attack the organic materials to form CO, CO 2 , and H 2 O as volatile by-products.
- a subsequent processing step may include heating the semiconductor substrate in a diffusion furnace or applying a layer of material with a chemical vapor deposition system.
- a semiconductor substrate is inadvertently passed to a thermal furnace or vapor deposition system with incomplete removal of the photo-resist material.
- the resulting damage to the processing equipment may be severe.
- furnace diffusion tubes are irreparably damaged by vaporized hydrocarbons and carbon from the photo-resist material and, thus, the furnace diffusion tubes must be replaced.
- the replacement equipment and/or the downtime to repair the processing equipment is usually very costly.
- the photo-resist carrying semiconductor substrate and one or more subsequent semiconductor substrates entering the processing equipment prior to shutdown of the equipment are usually also contaminated and must be discarded.
- a semiconductor substrate may have a value between about $10,000 and $20,000. Thus, even an occasional loss is significant.
- endpoint completion of the photo-resist stripping be accurately detected.
- a common endpoint detection method with plasma etching is disclosed in U.S. Pat. No. 4,377,436 issued Mar. 22, 1983 to Donnelly et al. wherein endpoint detection during plasma-assisted etching is signaled by cessation or onset of spatially confined luminescence resulting from an etch reaction product.
- the light source for the luminescence comes from the plasma generation.
- the generation of the plasma has been removed from the etching chamber. The removal of the plasma generation from the etching chamber prevents excess heat buildup in the etching chamber caused by the plasma generation and allows for different frequencies and wavelengths to be used to create free radials (i.e., the reactive species).
- the reactive species is formed remotely in a microwave reaction chamber and transported to the etching chamber, such as shown in U.S. Pat. No. 5,489,362 issued Feb. 6, 1996 to Steinhardt et al. No plasma is present in the stripping chamber with such a microwave plasma system. Therefore, there is no light source present in the chamber that can be used for detection of the endpoint removal of the photo-resist material.
- the present invention is an automated method and apparatus for determining the endpoint of the removal of a photo-resist material on the surface of a seniconductor substrate by the detection of fluorescence, reflection, or absorption of light by the photo-resist material.
- the term “emanated light” is defined as the light resulting from a light striking the photo-resist material or other material including fluoresced light, reflected light, or absorbed light.
- photo-resist materials are generally organic polymers, such as phenol-formaldehyde, polyisoprene, poly-methyl methacrylate, poly-methyl isopropenyl ketone, poly-butene-1-sulfone, poly-trifluoroethyl chloroacrylate, and the like.
- Organic substances can generally fluoresce (luminescence that is caused by the absorption of radiation at one wavelength followed by nearly immediate re-radiation at a different wavelength) or will absorb or reflect light.
- Fluorescence of the photo-resist material at a particular wavelength, or reflection/absorption by the photo-resist material of light at a given wavelength may be detected and measured, provided the material differs from the underlying semiconductor substrate in fluorescence or reflection/absorption at a selected wavelength or wavelengths.
- a positive photo-resist generally fluoresces red or red-orange and a negative photo-resist generally fluoresces yellow.
- the presence of photo-resist material on a semiconductor substrate surface may be rapidly and automatically determined, recorded, and used to determine when the photo-resist material has been removed from the semiconductor substrate surface.
- a semiconductor substrate is introduced into a stripping chamber which receives at least one reactive species, usually generated from oxygen, from a microwave plasma generator.
- the stripping chamber includes a first optical port and a second optical port positioned in a wall of the stripping chamber.
- a beam of light from a lamp passes through the first port, strikes the photo-resist material on the semiconductor substrate and is reflected as an emanated beam at an angle through the second optical port.
- the photo-resist material differs from the semiconductor substrate in fluorescence, absorption, and/or reflection properties at some wavelengths of incident light.
- the intensity of the emanated light will decrease when the photo-resist is stripped away.
- the stripping process can be terminated.
- This detection method also allows the system to generate an error signal if the level indicating that the photo-resist has been stripped is not reached within a certain amount of time. Such an error signal would indicate that a semiconductor substrate was stripping poorly (i.e., too slowly) or the stripping equipment was not functioning properly.
- This error signal allows for the culling of the offending semiconductor substrate for rework or allows for the stripping equipment to be shut down for repair, which prevents the spread of photo-resist material contamination throughout other process steps.
- the throughput of the stripping equipment can be increased because empirically established finite strip times used in conjunction with endpoint detection of the photo-resist removal prevents the need for exaggerated strip times to ensure complete stripping.
- the semiconductor substrate is irradiated with light, which light may be monochromatic, multichromatic, or white.
- light may be monochromatic, multichromatic, or white.
- the intensity of generated fluorescence particular to the photo-resist material at a given wavelength is measured.
- the intensity is measured at a wavelength which is largely or essentially fully absorbed by the photo-resist material.
- the intensity of reflected light is measured at a particular wavelength highly reflected by the photo-resist material but absorbed by the substrate.
- the intensity of the emanated light is measured by a sensing apparatus and the result inputted to a logic circuit, e.g., a programmable computer.
- the result may be recorded and used for a decision making step or to activate a culling device.
- FIG. 1 is a diagrammatic view of a photo-resist material stripping apparatus of the present invention
- FIG. 2 is a side view of an alternate photo-resist material stripping apparatus of the present invention.
- FIG. 3 is a side view of an alternate light detection configuration of the present invention.
- FIG. 1 illustrates a stripping apparatus 100 of the present invention. It should be understood that the apparatus 100 of FIG. 1 is not meant to be an actual view of any particular stripping device, but is merely an idealized representation which is employed to more clearly and fully depict the process of the invention than would otherwise be possible.
- the stripping apparatus 100 comprises a stripping chamber 102 having one or more entryways or portals (not shown) for the introduction and removal of semiconductor substrates, such as semiconductor substrate 104 , into and from the stripping chamber 102 .
- the semiconductor substrate 104 may be a semiconductor material comprising a slice of crystalline silicon (silicon wafer) or may include various semiconductive material or material layers, including without limitation silicon wafers, silicon-on-insulative (SOI) structure, silicon-on-sapphire (SOS) structure, gallium arsenide, or germanium.
- the stripping apparatus 100 also includes a microwave plasma generator 106 which generates reactive species in a plasma from an oxygen containing gas 108 fed to the plasma generator 106 .
- the reactive species travel down waveguide 110 into the stripping chamber 102 .
- a photo-resist material detection apparatus is integrated with the stripping chamber 102 for in situ automated determination of the progress in stripping of a photo-resist material 114 from the semiconductor substrate 104 .
- the photo-resist material 114 differs from the semiconductor substrate 104 in fluorescing, absorption, and/or reflection properties at some wavelengths of incident light.
- the semiconductor substrate 104 is shown on a movable stage 118 within the stripping chamber 102 to provide the desired positioning of the semiconductor substrate 104 with respect to a primary high energy beam 134 .
- the movable stage 118 may be movable by one or more stepper motors 120 (shown in shadow lines) or other motive means controlled by electronic signals 122 from a control mechanism 124 , such as a programmed general purpose computer, i.e., a personal computer driving appropriate switches.
- a control mechanism 124 such as a programmed general purpose computer, i.e., a personal computer driving appropriate switches.
- the photo-resist material detection apparatus includes two optical ports, a first optical port 126 and a second optical port 128 , which are positioned in an upper wall 132 of the stripping chamber 102 .
- the primary high energy beam 134 of light from a high energy lamp 136 passes through the first port 126 , strikes the photo-resist material 114 of the semiconductor substrate 104 at an angle of incidence ⁇ and is reflected as an emanated beam 138 at an angle of departure ⁇ (substantially equal to angle of incidence ⁇ ) through the second optical port 128 .
- the beam 134 may irradiate the entire surface of the semiconductor substrate 104 simultaneously, the beam 134 is preferably a sheet beam having a width (perpendicular to the plane of the drawing sheet) approximately the width of the semiconductor substrate 104 .
- the semiconductor substrate 104 can be passed under the sheet beam using movable stage 118 , enabling the inspection of the entire surface of the semiconductor substrate 104 .
- the semiconductor substrate 104 can be positioned on a rotating platform 180 , wherein a sheet beam 182 is directed to a center point 184 of the photo-resist material 114 on the semiconductor substrate 104 and extends across the width (perpendicular to the plane of the drawing sheet) of the semiconductor substrate 104 resulting in emanated beam 190 .
- the rotatable platform 180 is rotated about axis 186 such that the entire surface 188 of the photo-resist material 114 is contacted by the sheet beam 182 . This allows for different perspectives of the photo-resist material surface 188 which will detect photo-resist material 114 that may be in a “shadow” due to the topography of the semiconductor substrate 104 , if only one particular perspective is taken.
- Fluoresced and/or reflected light produced by existing photo-resist material 114 in response to the beam 134 is also present in the emanated beam 138 .
- the emanated beam 138 may be passed through an optical band pass filter or suppression filter 140 to absorb non-fluoresced light or undesired reflected light and produce a filtered light beam substantially free of such undesired wavelengths.
- the emanated beam 138 may be passed through the optical band pass filter 140 to produce a light beam having a narrow wavelength band of, for example, 700 nm +/ ⁇ 80 nm.
- Such a wavelength is a characteristic fluorescing emission of commonly used positive photo-resist materials, as listed above.
- the emanated beam 138 is transmitted into a photo-multiplier tube 142 for the ultimate generation of an electronic signal 156 indicative of the light intensity at the filtered light wavelength.
- the electronic signal 156 may be generated by a light intensity sensor 150 , such as a silicon diode sensor, which generates an analog intensity signal 152 .
- the intensity signal 152 is sent to a power meter 154 including an analog-to-digital converter, which converts the intensity signal 152 into an electronic binary numerical value comprising the electronic signal 156 .
- the electronic signal 156 is preferably processed by a software program in the control mechanism 124 (preferably a programmed computer). It is, of course, understood that analog to digital conversion is not a necessary limitation.
- the control mechanism 124 can be configured to receive an analog signal directly.
- the control mechanism 124 determines whether stripping endpoint has occurred and sends a cessation signal 160 to the microwave plasma generator 106 if endpoint is detected, or if the endpoint is not detected within a predetermined time frame.
- the control mechanism 124 also provides transfer instructions 162 to a wafer transfer device 148 based on electronic signal 156 .
- the transfer instructions 162 are generated for either the detection of stripping endpoint or for the rejection of the semiconductor substrate 104 .
- the transfer instructions 162 will trigger the placement and retrieval of the semiconductor substrate 104 into the stripping chamber 102 and from the stripping chamber 102 after the test to another location for further processing.
- the electronic signals 122 for stage control are also sent by the control mechanism 124 for controlling motion of the movable stage 118 .
- the beam 134 is shown striking the photo-resist material 114 on the semiconductor substrate 104 at the angle of incidence ⁇ of about 45 degrees and the emanated beam 138 is shown reflected at the angle of departure ⁇ of about 45 degrees.
- the incident angle a for the beam 134 and the departure angle ⁇ for the emanated beam 138 are preferably between 0 and 45 degrees.
- a dichromatic mirror 172 a mirror which reflects wavelengths of less than a given value, and passes wavelengths greater than the given value
- the beam 134 and the emanated beam 138 may both pass through the same port, and incident angle ⁇ and the departure angle ⁇ are both 90 degrees (i.e., perpendicular to the semiconductor substrate 104 ).
- the emanated beam 138 is shown offset from the beam 134 for the sake of clarity.
- the high energy lamp 136 is preferably a mercury or xenon lamp which produces high intensity, fluorescence-inducing illumination.
- the light output from the high energy lamp 136 may be filtered by a band pass or excitation filter 144 for removing wavelengths from the primary high energy beam 134 which do not stimulate fluorescence, reflect, or absorb in the semiconductor substrate 104 .
- the method depends upon a difference in fluorescence or light absorption/reflectance between the material to be detected, e.g., the photo-resist and the underlying substrate.
- a wavelength of incident illumination is typically chosen which maximizes the difference in fluorescence, absorption, or reflectance. It is preferred to use fluorescence as the measured output, but light absorbance may be used when the material to be detected strongly absorbs a particular wavelength of radiation while the substrate strongly reflects the same.
- references herein to light of a particular “wavelength” encompass wavelength bands that are “about” a particular wavelength.
- the term “a particular wavelength” may include wavelengths both slightly longer and shorter than the “particular wavelength”.
Abstract
Description
- This application is a continuation of application Ser. No. 08/963,508, filed Nov. 4, 1997, pending.
- 1. Field of the Invention
- This invention relates generally to the manufacture of semiconductor devices prepared by a method including photolithography. More particularly, this invention pertains to a method for inspecting semiconductor substrates to determine the completion of stripping (“endpoint”) during a plasma stripping process to remove a photo-resist material from a semiconductor substrate surface after photolithography.
- 2. State of the Art
- Semiconductor chips are produced in a multi-step process by which a plurality of identical electronic circuits is typically formed on a semiconductor substrate, such as a silicon wafer. The semiconductor substrate is then subdivided (diced) into individual chips which are further processed into packaged semiconductor devices or otherwise secured in higher-level packaging for ultimate use.
- The electronic circuits are generally patterned into a semiconductor substrate by a series of steps including photolithography. To elaborate, a photo-resist material is coated onto the semiconductor substrate surface. As disclosed in commonly owned U.S. Pat. No. 5,350,236 issued Sep. 27, 1994, hereby incorporated herein by reference, the temperature of a semiconductor substrate during the application of a material can be monitored by measuring light reflected from a surface of the semiconductor substrate, such that the material and semiconductor substrate are not overheated.
- After the photo-resist material has been coated on the semiconductor substrate surface, it is selectively exposed to a radiation source, such as by the passage of radiation (i.e., light, e-beam, or X-rays) through a mask having a desired aperture pattern defined therein. If a positive photo-resist material is used, the exposure to the radiation source converts the positive photo-resist material to a more soluble state which allows the exposed positive photo-resist to be removed with a solvent, thereby leaving a pattern substantially identical to the mask. If a negative photo-resist material is used, the exposure to the radiation source converts the negative photo-resist material to a less soluble state which allows the unexposed positive photo-resist to be removed with a solvent, thereby leaving a pattern substantially identical to the openings in the mask. Whether a positive or a negative photo-resist material is used, the photolithographic process results in a photo-resist pattern which will become the electronic circuit pattern on a semiconductor substrate.
- Following the removal of the portions of the photo-resist material in the development process, the semiconductor substrate is subjected to further processing steps which may include doping, etching, and/or deposition of conductive materials in unprotected areas, i.e., areas devoid of photo-resist material. After one or more of these processing steps, the semiconductor substrate is subjected to a stripping step to remove the photo-resist material remaining on the semiconductor substrate.
- The stripping of photo-resist material is commonly achieved using plasma etching. In plasma etching, a glow discharge is used to produce at least one reactive species, such as atoms, radicals, and/or ions, from relatively inert gas molecules. Basically, a plasma etching process comprises 1) at least one reactive species is generated in a plasma from a bulk gas, 2) the reactive species diffuses to a surface of a material being etched, 3) the reactive species is absorbed on the surface of the material being etched, 4) a chemical reaction occurs which results in the formation of at least one volatile by-product, 5) the by-product is desorbed from the surface of the material being etched, and 6) the desorbed by-product diffuses into the bulk gas. The materials used as photo-resist are generally organic polymers, such as phenol-formaldehyde, polyisoprene, poly-methyl methacrylate, poly-methyl isopropenyl ketone, poly-butene-1-sulfone, poly-trifluoroethyl chloroacrylate, and the like. Such photo-resist materials are generally etched in plasmas containing pure oxygen to produce species that attack the organic materials to form CO, CO2, and H2O as volatile by-products.
- After the removal of the photo-resist material, a subsequent processing step may include heating the semiconductor substrate in a diffusion furnace or applying a layer of material with a chemical vapor deposition system. Occasionally, a semiconductor substrate is inadvertently passed to a thermal furnace or vapor deposition system with incomplete removal of the photo-resist material. The resulting damage to the processing equipment may be severe. For example, furnace diffusion tubes are irreparably damaged by vaporized hydrocarbons and carbon from the photo-resist material and, thus, the furnace diffusion tubes must be replaced. The replacement equipment and/or the downtime to repair the processing equipment is usually very costly.
- Furthermore, the photo-resist carrying semiconductor substrate and one or more subsequent semiconductor substrates entering the processing equipment prior to shutdown of the equipment are usually also contaminated and must be discarded. At a late stage of manufacture, a semiconductor substrate may have a value between about $10,000 and $20,000. Thus, even an occasional loss is significant.
- Therefore, it is very important that completion (“endpoint”) of the photo-resist stripping be accurately detected. A common endpoint detection method with plasma etching is disclosed in U.S. Pat. No. 4,377,436 issued Mar. 22, 1983 to Donnelly et al. wherein endpoint detection during plasma-assisted etching is signaled by cessation or onset of spatially confined luminescence resulting from an etch reaction product. The light source for the luminescence comes from the plasma generation. However, as the use of microwave plasma etching has developed, the generation of the plasma has been removed from the etching chamber. The removal of the plasma generation from the etching chamber prevents excess heat buildup in the etching chamber caused by the plasma generation and allows for different frequencies and wavelengths to be used to create free radials (i.e., the reactive species).
- The reactive species is formed remotely in a microwave reaction chamber and transported to the etching chamber, such as shown in U.S. Pat. No. 5,489,362 issued Feb. 6, 1996 to Steinhardt et al. No plasma is present in the stripping chamber with such a microwave plasma system. Therefore, there is no light source present in the chamber that can be used for detection of the endpoint removal of the photo-resist material.
- Therefore, it would be advantageous to develop an apparatus and method of luminescent endpoint detection for the stripping of materials in a microwave plasma etching system employing a plasma chamber separate from its etching chamber.
- The present invention is an automated method and apparatus for determining the endpoint of the removal of a photo-resist material on the surface of a seniconductor substrate by the detection of fluorescence, reflection, or absorption of light by the photo-resist material. Hereinafter, the term “emanated light” is defined as the light resulting from a light striking the photo-resist material or other material including fluoresced light, reflected light, or absorbed light.
- As mentioned above, photo-resist materials are generally organic polymers, such as phenol-formaldehyde, polyisoprene, poly-methyl methacrylate, poly-methyl isopropenyl ketone, poly-butene-1-sulfone, poly-trifluoroethyl chloroacrylate, and the like. Organic substances can generally fluoresce (luminescence that is caused by the absorption of radiation at one wavelength followed by nearly immediate re-radiation at a different wavelength) or will absorb or reflect light. Fluorescence of the photo-resist material at a particular wavelength, or reflection/absorption by the photo-resist material of light at a given wavelength, may be detected and measured, provided the material differs from the underlying semiconductor substrate in fluorescence or reflection/absorption at a selected wavelength or wavelengths. For example, a positive photo-resist generally fluoresces red or red-orange and a negative photo-resist generally fluoresces yellow.
- In a particular application of the invention, the presence of photo-resist material on a semiconductor substrate surface may be rapidly and automatically determined, recorded, and used to determine when the photo-resist material has been removed from the semiconductor substrate surface. In a preferred application of the present invention, a semiconductor substrate is introduced into a stripping chamber which receives at least one reactive species, usually generated from oxygen, from a microwave plasma generator. The stripping chamber includes a first optical port and a second optical port positioned in a wall of the stripping chamber. A beam of light from a lamp passes through the first port, strikes the photo-resist material on the semiconductor substrate and is reflected as an emanated beam at an angle through the second optical port. Preferably, the photo-resist material differs from the semiconductor substrate in fluorescence, absorption, and/or reflection properties at some wavelengths of incident light.
- The intensity of the emanated light will decrease when the photo-resist is stripped away. When the intensity has decreased to a level indicating that the photo-resist has been completely stripped away, the stripping process can be terminated. This detection method also allows the system to generate an error signal if the level indicating that the photo-resist has been stripped is not reached within a certain amount of time. Such an error signal would indicate that a semiconductor substrate was stripping poorly (i.e., too slowly) or the stripping equipment was not functioning properly. This error signal allows for the culling of the offending semiconductor substrate for rework or allows for the stripping equipment to be shut down for repair, which prevents the spread of photo-resist material contamination throughout other process steps. Furthermore, the throughput of the stripping equipment can be increased because empirically established finite strip times used in conjunction with endpoint detection of the photo-resist removal prevents the need for exaggerated strip times to ensure complete stripping.
- In this invention, the semiconductor substrate is irradiated with light, which light may be monochromatic, multichromatic, or white. In one variation, the intensity of generated fluorescence particular to the photo-resist material at a given wavelength is measured. In another variation, the intensity is measured at a wavelength which is largely or essentially fully absorbed by the photo-resist material. In a further variation, the intensity of reflected light is measured at a particular wavelength highly reflected by the photo-resist material but absorbed by the substrate.
- The intensity of the emanated light is measured by a sensing apparatus and the result inputted to a logic circuit, e.g., a programmable computer. The result may be recorded and used for a decision making step or to activate a culling device.
- While the specification concludes with claims particularly pointing out and distinctly claiming that which is regarded as the present invention, the advantages of this invention can be more readily ascertained from the following description of the invention when read in conjunction with the accompanying drawings in which:
- FIG. 1 is a diagrammatic view of a photo-resist material stripping apparatus of the present invention;
- FIG. 2 is a side view of an alternate photo-resist material stripping apparatus of the present invention; and
- FIG. 3 is a side view of an alternate light detection configuration of the present invention.
- FIG. 1 illustrates a stripping
apparatus 100 of the present invention. It should be understood that theapparatus 100 of FIG. 1 is not meant to be an actual view of any particular stripping device, but is merely an idealized representation which is employed to more clearly and fully depict the process of the invention than would otherwise be possible. - The stripping
apparatus 100 comprises a strippingchamber 102 having one or more entryways or portals (not shown) for the introduction and removal of semiconductor substrates, such assemiconductor substrate 104, into and from the strippingchamber 102. Thesemiconductor substrate 104 may be a semiconductor material comprising a slice of crystalline silicon (silicon wafer) or may include various semiconductive material or material layers, including without limitation silicon wafers, silicon-on-insulative (SOI) structure, silicon-on-sapphire (SOS) structure, gallium arsenide, or germanium. - The stripping
apparatus 100 also includes amicrowave plasma generator 106 which generates reactive species in a plasma from anoxygen containing gas 108 fed to theplasma generator 106. The reactive species travel downwaveguide 110 into the strippingchamber 102. - A photo-resist material detection apparatus is integrated with the stripping
chamber 102 for in situ automated determination of the progress in stripping of a photo-resistmaterial 114 from thesemiconductor substrate 104. Preferably, the photo-resistmaterial 114 differs from thesemiconductor substrate 104 in fluorescing, absorption, and/or reflection properties at some wavelengths of incident light. Thesemiconductor substrate 104 is shown on amovable stage 118 within the strippingchamber 102 to provide the desired positioning of thesemiconductor substrate 104 with respect to a primaryhigh energy beam 134. Themovable stage 118 may be movable by one or more stepper motors 120 (shown in shadow lines) or other motive means controlled byelectronic signals 122 from acontrol mechanism 124, such as a programmed general purpose computer, i.e., a personal computer driving appropriate switches. - The photo-resist material detection apparatus includes two optical ports, a first
optical port 126 and a secondoptical port 128, which are positioned in anupper wall 132 of the strippingchamber 102. The primaryhigh energy beam 134 of light from ahigh energy lamp 136 passes through thefirst port 126, strikes the photo-resistmaterial 114 of thesemiconductor substrate 104 at an angle of incidence α and is reflected as anemanated beam 138 at an angle of departure β (substantially equal to angle of incidence α) through the secondoptical port 128. Although thebeam 134 may irradiate the entire surface of thesemiconductor substrate 104 simultaneously, thebeam 134 is preferably a sheet beam having a width (perpendicular to the plane of the drawing sheet) approximately the width of thesemiconductor substrate 104. Thesemiconductor substrate 104 can be passed under the sheet beam usingmovable stage 118, enabling the inspection of the entire surface of thesemiconductor substrate 104. Furthermore, as illustrated in FIG. 2, thesemiconductor substrate 104 can be positioned on arotating platform 180, wherein asheet beam 182 is directed to acenter point 184 of the photo-resistmaterial 114 on thesemiconductor substrate 104 and extends across the width (perpendicular to the plane of the drawing sheet) of thesemiconductor substrate 104 resulting in emanatedbeam 190. Therotatable platform 180 is rotated aboutaxis 186 such that theentire surface 188 of the photo-resistmaterial 114 is contacted by thesheet beam 182. This allows for different perspectives of the photo-resistmaterial surface 188 which will detect photo-resistmaterial 114 that may be in a “shadow” due to the topography of thesemiconductor substrate 104, if only one particular perspective is taken. - Fluoresced and/or reflected light produced by existing photo-resist
material 114 in response to thebeam 134 is also present in the emanatedbeam 138. The emanatedbeam 138 may be passed through an optical band pass filter orsuppression filter 140 to absorb non-fluoresced light or undesired reflected light and produce a filtered light beam substantially free of such undesired wavelengths. For example, the emanatedbeam 138 may be passed through the opticalband pass filter 140 to produce a light beam having a narrow wavelength band of, for example, 700 nm +/−80 nm. Such a wavelength is a characteristic fluorescing emission of commonly used positive photo-resist materials, as listed above. - The emanated
beam 138 is transmitted into a photo-multiplier tube 142 for the ultimate generation of anelectronic signal 156 indicative of the light intensity at the filtered light wavelength. Theelectronic signal 156 may be generated by alight intensity sensor 150, such as a silicon diode sensor, which generates ananalog intensity signal 152. Theintensity signal 152 is sent to apower meter 154 including an analog-to-digital converter, which converts theintensity signal 152 into an electronic binary numerical value comprising theelectronic signal 156. Theelectronic signal 156 is preferably processed by a software program in the control mechanism 124 (preferably a programmed computer). It is, of course, understood that analog to digital conversion is not a necessary limitation. Thecontrol mechanism 124 can be configured to receive an analog signal directly. - The
control mechanism 124 determines whether stripping endpoint has occurred and sends acessation signal 160 to themicrowave plasma generator 106 if endpoint is detected, or if the endpoint is not detected within a predetermined time frame. Thecontrol mechanism 124 also providestransfer instructions 162 to awafer transfer device 148 based onelectronic signal 156. Thetransfer instructions 162 are generated for either the detection of stripping endpoint or for the rejection of thesemiconductor substrate 104. Thetransfer instructions 162 will trigger the placement and retrieval of thesemiconductor substrate 104 into the strippingchamber 102 and from the strippingchamber 102 after the test to another location for further processing. Theelectronic signals 122 for stage control are also sent by thecontrol mechanism 124 for controlling motion of themovable stage 118. - As illustrated in FIG. 1, the
beam 134 is shown striking the photo-resistmaterial 114 on thesemiconductor substrate 104 at the angle of incidence α of about 45 degrees and the emanatedbeam 138 is shown reflected at the angle of departure β of about 45 degrees. The incident angle a for thebeam 134 and the departure angle β for the emanatedbeam 138 are preferably between 0 and 45 degrees. However, by using a dichromatic mirror 172 (a mirror which reflects wavelengths of less than a given value, and passes wavelengths greater than the given value) as shown in FIG. 3, thebeam 134 and the emanatedbeam 138 may both pass through the same port, and incident angle α and the departure angle β are both 90 degrees (i.e., perpendicular to the semiconductor substrate 104). The emanatedbeam 138 is shown offset from thebeam 134 for the sake of clarity. - The
high energy lamp 136 is preferably a mercury or xenon lamp which produces high intensity, fluorescence-inducing illumination. The light output from thehigh energy lamp 136 may be filtered by a band pass orexcitation filter 144 for removing wavelengths from the primaryhigh energy beam 134 which do not stimulate fluorescence, reflect, or absorb in thesemiconductor substrate 104. - As indicated, the method depends upon a difference in fluorescence or light absorption/reflectance between the material to be detected, e.g., the photo-resist and the underlying substrate. A wavelength of incident illumination is typically chosen which maximizes the difference in fluorescence, absorption, or reflectance. It is preferred to use fluorescence as the measured output, but light absorbance may be used when the material to be detected strongly absorbs a particular wavelength of radiation while the substrate strongly reflects the same.
- It should be understood that references herein to light of a particular “wavelength” encompass wavelength bands that are “about” a particular wavelength. In other words, the term “a particular wavelength” may include wavelengths both slightly longer and shorter than the “particular wavelength”.
- Having thus described in detail preferred embodiments of the present invention, it is to be understood that the invention defined by the appended claims is not to be limited by particular details set forth in the above description, as many apparent variations thereof are possible without departing from the spirit or scope thereof.
Claims (46)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/399,242 US6429928B2 (en) | 1997-11-04 | 1999-09-20 | Method and apparatus employing external light source for endpoint detection |
US09/796,232 US6509960B2 (en) | 1997-11-04 | 2001-02-28 | Method and apparatus employing external light source for endpoint detection |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/963,508 US5969805A (en) | 1997-11-04 | 1997-11-04 | Method and apparatus employing external light source for endpoint detection |
US09/399,242 US6429928B2 (en) | 1997-11-04 | 1999-09-20 | Method and apparatus employing external light source for endpoint detection |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US08/963,508 Continuation US5969805A (en) | 1997-11-04 | 1997-11-04 | Method and apparatus employing external light source for endpoint detection |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US09/796,232 Continuation US6509960B2 (en) | 1997-11-04 | 2001-02-28 | Method and apparatus employing external light source for endpoint detection |
Publications (2)
Publication Number | Publication Date |
---|---|
US20010046043A1 true US20010046043A1 (en) | 2001-11-29 |
US6429928B2 US6429928B2 (en) | 2002-08-06 |
Family
ID=25507341
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US08/963,508 Expired - Lifetime US5969805A (en) | 1997-11-04 | 1997-11-04 | Method and apparatus employing external light source for endpoint detection |
US09/399,242 Expired - Lifetime US6429928B2 (en) | 1997-11-04 | 1999-09-20 | Method and apparatus employing external light source for endpoint detection |
US09/796,232 Expired - Lifetime US6509960B2 (en) | 1997-11-04 | 2001-02-28 | Method and apparatus employing external light source for endpoint detection |
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US08/963,508 Expired - Lifetime US5969805A (en) | 1997-11-04 | 1997-11-04 | Method and apparatus employing external light source for endpoint detection |
Family Applications After (1)
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US09/796,232 Expired - Lifetime US6509960B2 (en) | 1997-11-04 | 2001-02-28 | Method and apparatus employing external light source for endpoint detection |
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Country | Link |
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US (3) | US5969805A (en) |
EP (1) | EP1029231A4 (en) |
JP (2) | JP2003519433A (en) |
KR (1) | KR100402508B1 (en) |
WO (1) | WO1999023472A1 (en) |
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1997
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-
1998
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-
1999
- 1999-09-20 US US09/399,242 patent/US6429928B2/en not_active Expired - Lifetime
-
2001
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US20130052758A1 (en) * | 2011-08-25 | 2013-02-28 | Palo Alto Research Center Incorporated | Removing aluminum nitride sections |
US8908161B2 (en) * | 2011-08-25 | 2014-12-09 | Palo Alto Research Center Incorporated | Removing aluminum nitride sections |
Also Published As
Publication number | Publication date |
---|---|
US20010009459A1 (en) | 2001-07-26 |
EP1029231A1 (en) | 2000-08-23 |
EP1029231A4 (en) | 2005-08-17 |
KR20010031829A (en) | 2001-04-16 |
KR100402508B1 (en) | 2003-10-22 |
US6509960B2 (en) | 2003-01-21 |
US5969805A (en) | 1999-10-19 |
JP2003519433A (en) | 2003-06-17 |
WO1999023472A1 (en) | 1999-05-14 |
JP2007189248A (en) | 2007-07-26 |
US6429928B2 (en) | 2002-08-06 |
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