JPH08220010A - Semiconductor processing apparatus - Google Patents
Semiconductor processing apparatusInfo
- Publication number
- JPH08220010A JPH08220010A JP5319495A JP5319495A JPH08220010A JP H08220010 A JPH08220010 A JP H08220010A JP 5319495 A JP5319495 A JP 5319495A JP 5319495 A JP5319495 A JP 5319495A JP H08220010 A JPH08220010 A JP H08220010A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- light
- impurities
- semiconductor
- photodetector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体ウェハに対して
酸化、拡散、低圧ＣＶＤによる多結晶シリコン膜の形成
等の処理を行う半導体処理装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor processing apparatus for processing semiconductor wafers such as oxidation, diffusion, and formation of a polycrystalline silicon film by low pressure CVD.
【０００２】[0002]
【従来の技術】酸化工程に用いられる熱処理装置は、ウ
ェハをキャリアから熱処理炉内のボートへ移動させるた
めの搬送系及びウェハを大気から遮断して６００〜１２
００℃程度の高温に保つ熱処理系を含み、更に熱処理の
内容によっては、熱処理炉内へＨ2 、Ｏ2 、Ｎ2 、ＨＣ
ｌなどの所定のガスを導入するためのガス制御系を含ん
でいる。一般に、上記熱処理炉では、石英製のものが使
用され、炉内でウェハを保持するボートは、石英やセラ
ミック等で作られたものが使用される。2. Description of the Related Art A heat treatment apparatus used in an oxidation process is a device for moving a wafer from a carrier to a boat in a heat treatment furnace, and the wafer is shut off from the atmosphere to 600-12.
It includes a 00 ° C. of about-heat-keeping a high temperature, further the content of the heat treatment, H 2 into the heat treatment furnace, O 2, N 2, HC
It includes a gas control system for introducing a predetermined gas such as l. Generally, the heat treatment furnace is made of quartz, and the boat for holding the wafer in the furnace is made of quartz or ceramic.
【０００３】上記熱処理を行う前に既に各種の処理がな
されている半導体ウェハの場合、熱処理を行う前に、前
工程で使用した不純物を除去する処理が行われるのが普
通である。その理由は、かかる不純物が半導体ウェハ上
に残存したまま熱処理を行うと、その半導体ウェハ自体
に不純物が混入するだけでなく、熱処理炉も不純物によ
って汚染され、その後にこの炉内で処理する半導体ウェ
ハにも不純物が混入して、半導体製品の品質低下を招く
危険性があるので、これを防止するためである。例え
ば、前工程においてフォトレジストを使用した場合に
は、フォトレジストを構成する有機物や、フォトレジス
ト中に含まれるＮｉ、Ｃｄ、Ｃｕ、Ｆｅ、Ａｌ等の金属
が不純物となって熱処理炉を汚染することがある。これ
を防止するために、Ｏ2 プラズマアッシング工程や半導
体ウェハを熱硫酸中に浸漬する工程などによって、フォ
トレジストを分解・除去する処理が行われている。In the case of a semiconductor wafer which has already been subjected to various kinds of treatment before the above heat treatment, it is usual to perform a treatment for removing the impurities used in the previous step before the heat treatment. The reason for this is that if heat treatment is performed while such impurities remain on the semiconductor wafer, not only will the impurities be mixed into the semiconductor wafer itself, but the heat treatment furnace will also be contaminated by the impurities, and the semiconductor wafer to be processed in this furnace after that. This is to prevent the possibility that impurities may be mixed in and the quality of semiconductor products may be deteriorated. For example, when a photoresist is used in the previous step, organic substances that constitute the photoresist and metals such as Ni, Cd, Cu, Fe and Al contained in the photoresist become impurities and contaminate the heat treatment furnace. Sometimes. In order to prevent this, a process of decomposing / removing the photoresist is performed by an O 2 plasma ashing process, a process of immersing the semiconductor wafer in hot sulfuric acid, or the like.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来
は、不純物を分解・除去する工程の後に、不純物が完全
に除去されたか否かの確認がなされていなかった。この
ため、不純物が完全に除去されないで半導体ウェハ上に
残存していても、それに気付かぬまま、熱処理等の工程
へ移行することがあり、その後に同じ炉で処理される半
導体ウェハも汚染されるという問題があった。However, conventionally, it has not been confirmed whether the impurities have been completely removed after the step of decomposing and removing the impurities. For this reason, even if impurities are not completely removed and remain on the semiconductor wafer, the process may shift to a step such as heat treatment without noticing it, and the semiconductor wafer that is subsequently processed in the same furnace is also contaminated. There was a problem.
【０００５】本発明は、上記事情に基づいてなされたも
のであり、熱処理炉及び半導体ウェハの不純物による汚
染を有効に防止しうる半導体処理装置を提供することを
目的とするものである。The present invention has been made under the above circumstances, and an object of the present invention is to provide a semiconductor processing apparatus capable of effectively preventing contamination of a heat treatment furnace and a semiconductor wafer by impurities.
【０００６】[0006]
【課題を解決するための手段】上記の課題を解決するた
めの請求項１記載の発明は、半導体ウェハに光を照射す
る光照射手段と、前記半導体ウェハからの反射光のうち
特定波長の光を検出する光検出手段とを具備し、前記反
射光により前記半導体ウェハに付着した不純物を検出す
ることを特徴とするものである。According to a first aspect of the invention for solving the above-mentioned problems, a light irradiating means for irradiating a semiconductor wafer with light, and a light of a specific wavelength among light reflected from the semiconductor wafer are provided. And a light detecting unit for detecting the impurities, and detects impurities attached to the semiconductor wafer by the reflected light.
【０００７】請求項２記載の発明は、請求項１記載の発
明において、前記光照射手段は紫外線を照射するもので
あり、前記不純物は前記半導体ウェハの表面に残存する
レジストを主体とする有機物であることを特徴とするも
のである。According to a second aspect of the present invention, in the first aspect of the present invention, the light irradiating means irradiates with ultraviolet rays, and the impurities are organic substances mainly containing a resist remaining on the surface of the semiconductor wafer. It is characterized by being.
【０００８】[0008]
【作用】本発明は、前記の構成により、例えば一般的な
フォトレジストの場合には紫外線を照射したときに、蛍
光を発するという性質があるので、紫外線などの光を照
射する光照射手段から、処理される前の半導体ウェハに
紫外線等の光を照射し、その反射光を光検出手段で検出
することによって、不純物の残存を検知することができ
る。With the above structure, the present invention has the property that, for example, in the case of a general photoresist, it emits fluorescence when irradiated with ultraviolet rays. Therefore, from the light irradiation means for irradiating light such as ultraviolet rays, It is possible to detect the residual impurities by irradiating the semiconductor wafer before processing with light such as ultraviolet rays and detecting the reflected light with the light detecting means.
【０００９】[0009]
【実施例】以下に図面を参照して、本発明の一実施例に
ついて説明する。ここで、図１は、本発明の一実施例で
ある半導体処理装置の搬送用アーム、不純物検出部、熱
処理炉の部分を示した概略断面図、図２は、図１の不純
物検出部の具体的な構成を示した概略断面図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. Here, FIG. 1 is a schematic cross-sectional view showing a transfer arm, an impurity detection unit, and a heat treatment furnace of a semiconductor processing apparatus according to an embodiment of the present invention, and FIG. 2 shows a specific example of the impurity detection unit in FIG. It is a schematic sectional drawing which showed the typical structure.
【００１０】図１に示す半導体処理装置１０は、その内
部に、前工程が済んだ多数の半導体ウェハ１１が載置さ
れるキャリア１２、半導体ウェハ１１をキャリア１２か
らボート１３へ搬送するための搬送用アーム１４、半導
体ウェハ１１の熱処理を行う炉体１５、キャリア１２と
炉体１５の間にあって半導体ウェハ１１に残存する不純
物を検出する不純物検出部１６を含んでいる。ボート１
３は、石英又はセラミックなどから作られており、載置
された半導体ウェハ１１を、炉体１５の内部へ搬入する
役割を果たす。炉体１５は、半導体ウェハ１１を大気か
ら遮断し、６００〜１２００℃程度の高温として、内部
で半導体ウェハ１１に対して、酸化、拡散、低圧ＣＶＤ
等の種々の加熱を含む処理を行うことができる。尚、図
１では、炉内で使用する各種のガスを導くためのガス制
御系は省略した。A semiconductor processing apparatus 10 shown in FIG. 1 has a carrier 12 in which a large number of semiconductor wafers 11 having undergone a pre-process are placed, and a carrier for transferring the semiconductor wafers 11 from the carrier 12 to a boat 13. It includes an arm 14, a furnace body 15 for heat-treating the semiconductor wafer 11, and an impurity detection unit 16 between the carrier 12 and the furnace body 15 for detecting impurities remaining in the semiconductor wafer 11. Boat 1
Numeral 3 is made of quartz, ceramics, or the like, and serves to carry the mounted semiconductor wafer 11 into the furnace body 15. The furnace body 15 insulates the semiconductor wafer 11 from the atmosphere and raises the temperature to about 600 to 1200 ° C. to oxidize, diffuse, and low-pressure CVD the semiconductor wafer 11 internally.
Can be performed including various types of heating. In FIG. 1, a gas control system for introducing various gases used in the furnace is omitted.
【００１１】本実施例の不純物検出部１６は、図２に示
すように、水銀ランプ２１及び反射板２２よりなる紫外
線発生部２０、集光レンズ２３、スリット２４、ハーフ
ミラー２５、光学フィルタ２６、光検出器２７を有す
る。水銀ランプ２１としては、例えば超高圧水銀灯を、
光検出器２７としては、例えばＣＣＤセンサを用いるこ
とができる。As shown in FIG. 2, the impurity detecting section 16 of this embodiment includes an ultraviolet ray generating section 20 including a mercury lamp 21 and a reflecting plate 22, a condenser lens 23, a slit 24, a half mirror 25, an optical filter 26, It has a photodetector 27. As the mercury lamp 21, for example, an ultra-high pressure mercury lamp,
As the photodetector 27, for example, a CCD sensor can be used.
【００１２】紫外線発生部２０から発せられた紫外線
は、レンズ２３によって集光された後、スリット２４に
よって細長い帯状の光とされ、その後ハーフミラー２５
を通過して、半導体ウェハ１１上に照射される。半導体
ウェハ１１からの反射光は、ハーフミラー２５によって
反射された後、光学フィルタ２６を介して光検出器２７
へと導かれる。The ultraviolet rays emitted from the ultraviolet ray generator 20 are condensed by a lens 23 and then made into a strip-shaped light by a slit 24, and then a half mirror 25.
And is irradiated onto the semiconductor wafer 11. The reflected light from the semiconductor wafer 11 is reflected by the half mirror 25 and then passes through the optical filter 26 and the photodetector 27.
Be led to.
【００１３】ところで、フォトレジストの成分である有
機物は、紫外線を照射したときに、蛍光を発するという
性質を有する。したがって、前工程において使用したフ
ォトレジスト等の分解・除去が不十分なために半導体ウ
ェハ上にフォトレジスト等が残存していると、この半導
体ウェハに紫外線を照射したときの反射光には、蛍光成
分が含まれる。光学フィルタ２６は、半導体ウェハ１１
からの反射光のうち、この蛍光成分のみを透過して、残
りを遮断する。したがって、半導体ウェハ１１にフォト
レジストが残存していなければ、半導体ウェハ１１から
の反射光は光学フィルタ２６で遮断されるので、光検出
器２７では検知されないが、半導体ウェハ１１にフォト
レジストが残存している場合には、反射光の中の蛍光成
分が光学フィルタ２６を透過し、これが光検出器２７に
よって検知される。かかる紫外線の照射を、半導体ウェ
ハ１１の全体にわたって走査させ、これに基づいて蛍光
の検出を行うことにより、半導体ウェハ１１の表面、裏
面、側面に、フォトレジストが残存するか否かを、迅速
かつ的確に判断することができる。By the way, the organic substance which is a component of the photoresist has a property of emitting fluorescence when irradiated with ultraviolet rays. Therefore, if the photoresist, etc. used in the previous step is not sufficiently decomposed and removed, and the photoresist, etc. remains on the semiconductor wafer, the reflected light when the semiconductor wafer is irradiated with ultraviolet rays is fluorescent. Contains ingredients. The optical filter 26 is used for the semiconductor wafer 11
Of the reflected light from, only this fluorescent component is transmitted and the rest is blocked. Therefore, if the photoresist does not remain on the semiconductor wafer 11, the reflected light from the semiconductor wafer 11 is blocked by the optical filter 26, so that it is not detected by the photodetector 27, but the photoresist remains on the semiconductor wafer 11. In this case, the fluorescent component in the reflected light passes through the optical filter 26, and this is detected by the photodetector 27. By irradiating the entire surface of the semiconductor wafer 11 with the irradiation of ultraviolet rays and detecting fluorescence based on the scanning, whether or not the photoresist remains on the front surface, the back surface, and the side surfaces of the semiconductor wafer 11 can be quickly and quickly determined. You can make an accurate judgment.
【００１４】光検出器２７が反射光の中の蛍光を検知し
た場合には、搬送用アーム１４は当該半導体ウェハをボ
ート１３へ搬送することを中止し、ラインから取り除
く。これによって、炉体１５の内部が、半導体ウェハに
残存した不純物によって汚染されることが防止される。When the photodetector 27 detects the fluorescence in the reflected light, the transfer arm 14 stops the transfer of the semiconductor wafer to the boat 13 and removes it from the line. This prevents the inside of the furnace body 15 from being contaminated by the impurities remaining on the semiconductor wafer.
【００１５】尚、本発明は、上記実施例に限定されるも
のではなく、その要旨の範囲内で種々の変更が可能であ
る。例えば、上記実施例では、処理部が熱処理を行う部
分であるとして説明したが、本発明はこれには限定され
ず、フォトレジスト等が残存したまま処理したときに問
題を生じる各種の処理部についても、本発明を有効に適
用することができる。また、上記実施例では、紫外線に
よって蛍光を発する性質を有する有機物からなる不純物
の汚染について説明したが、本発明はこれに限定され
ず、紫外線を照射したときに、特定の波長の光を放出す
る性質を有する汚染物質を処理部へ混入することを防止
する任意の場合に、有効に適用することができる。The present invention is not limited to the above embodiment, but various modifications can be made within the scope of the invention. For example, in the above-described embodiment, the processing part is described as a part that performs heat treatment, but the present invention is not limited to this, and various processing parts that cause a problem when processing is performed with photoresist or the like remaining. Also, the present invention can be effectively applied. Further, in the above embodiment, the contamination of impurities made of an organic substance having a property of emitting fluorescence by ultraviolet rays was described, but the present invention is not limited to this, and emits light of a specific wavelength when irradiated with ultraviolet rays. The present invention can be effectively applied to any case in which a pollutant having a property is prevented from being mixed into the processing section.
【００１６】[0016]
【発明の効果】以上説明したように、本発明によれば、
光照射手段及び光検出手段を設け、光照射手段から照射
され半導体ウェハによって反射された光を、光検出手段
で検出したときは、その半導体ウェハに不純物が存在す
ることが分かるので、この半導体ウェハの処理を中止す
ることによって、そのまま処理された場合に生じる当該
半導体ウェハ及び処理部の不純物による汚染を有効に防
止できる。また、前記不純物検出手段として、紫外線を
照射して、その反射光によって不純物の付着を検出する
構成とすることにより、簡単かつ、確実に、不純物の付
着を検出することができる半導体処理装置を提供するこ
とができる。As described above, according to the present invention,
When the light detection means detects light emitted from the light irradiation means and reflected by the semiconductor wafer, it is known that impurities are present in the semiconductor wafer. By stopping the processing of (1), it is possible to effectively prevent the contamination of the semiconductor wafer and the processing portion due to the impurities that would occur when the processing is performed as it is. Further, the semiconductor processing apparatus capable of easily and reliably detecting the adhesion of impurities by irradiating ultraviolet rays as the impurity detecting means and detecting the adhesion of impurities by the reflected light thereof is provided. can do.
【図１】本発明の一実施例である半導体処理装置の搬送
用アーム、不純物検出部、熱処理炉の部分を示した概略
断面図である。FIG. 1 is a schematic cross-sectional view showing a transfer arm, an impurity detection unit, and a heat treatment furnace of a semiconductor processing apparatus according to an embodiment of the present invention.
【図２】図１の不純物検出部の具体的な構成を示した概
略断面図である。FIG. 2 is a schematic cross-sectional view showing a specific configuration of the impurity detection unit of FIG.
１０ 半導体処理装置 １１ 半導体ウェハ １２ キャリア １３ ボート １４ 搬送用アーム １５ 炉体 １６ 不純物検出部 ２０ 紫外線発生部 ２１ 水銀ランプ ２２ 反射板 ２３ 集光レンズ ２４ スリット ２５ ハーフミラー ２６ 光学フィルタ ２７ 光検出器 10 Semiconductor Processing Equipment 11 Semiconductor Wafer 12 Carrier 13 Boat 14 Conveying Arm 15 Furnace Body 16 Impurity Detection Section 20 Ultraviolet Generation Section 21 Mercury Lamp 22 Reflector 23 Condensing Lens 24 Slit 25 Half Mirror 26 Optical Filter 27 Photodetector
Claims (2)
と、前記半導体ウェハからの反射光のうち特定波長の光
を検出する光検出手段とを具備し、前記反射光により前
記半導体ウェハに付着した不純物を検出することを特徴
とする半導体処理装置。1. A light irradiating means for irradiating a semiconductor wafer with light, and a light detecting means for detecting light of a specific wavelength among reflected light from the semiconductor wafer, the light being adhered to the semiconductor wafer by the reflected light. A semiconductor processing apparatus, characterized in that the detected impurities are detected.
であり、前記不純物は前記半導体ウェハの表面に残存す
るレジストを主体とする有機物であることを特徴とする
請求項１記載の半導体処理装置。2. The semiconductor processing apparatus according to claim 1, wherein the light irradiating means irradiates ultraviolet rays, and the impurities are organic substances mainly composed of a resist remaining on the surface of the semiconductor wafer. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5319495A JPH08220010A (en) | 1995-02-17 | 1995-02-17 | Semiconductor processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5319495A JPH08220010A (en) | 1995-02-17 | 1995-02-17 | Semiconductor processing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08220010A true JPH08220010A (en) | 1996-08-30 |
Family
ID=12936070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5319495A Withdrawn JPH08220010A (en) | 1995-02-17 | 1995-02-17 | Semiconductor processing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08220010A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6256094B1 (en) * | 1997-11-04 | 2001-07-03 | Micron Technology, Inc. | Method and apparatus for automated, in situ material detection using filtered fluoresced, reflected, or absorbed light |
| US6429928B2 (en) | 1997-11-04 | 2002-08-06 | Micron Technology, Inc. | Method and apparatus employing external light source for endpoint detection |
| US6510683B1 (en) | 1992-09-14 | 2003-01-28 | Ramgen Power Systems, Inc. | Apparatus for power generation with low drag rotor and ramjet assembly |
| US7102737B2 (en) | 1997-11-04 | 2006-09-05 | Micron Technology, Inc. | Method and apparatus for automated, in situ material detection using filtered fluoresced, reflected, or absorbed light |
-
1995
- 1995-02-17 JP JP5319495A patent/JPH08220010A/en not_active Withdrawn
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6510683B1 (en) | 1992-09-14 | 2003-01-28 | Ramgen Power Systems, Inc. | Apparatus for power generation with low drag rotor and ramjet assembly |
| US6256094B1 (en) * | 1997-11-04 | 2001-07-03 | Micron Technology, Inc. | Method and apparatus for automated, in situ material detection using filtered fluoresced, reflected, or absorbed light |
| US6369887B2 (en) | 1997-11-04 | 2002-04-09 | Micron Technology, Inc. | Method and apparatus for automated, in situ material detection using filtered fluoresced, reflected, or absorbed light |
| US6429928B2 (en) | 1997-11-04 | 2002-08-06 | Micron Technology, Inc. | Method and apparatus employing external light source for endpoint detection |
| US6509960B2 (en) * | 1997-11-04 | 2003-01-21 | Micron Technology, Inc. | Method and apparatus employing external light source for endpoint detection |
| US6831734B2 (en) | 1997-11-04 | 2004-12-14 | Micron Technology, Inc. | Method and apparatus for automated, in situ material detection using filtered fluoresced, reflected, or absorbed light |
| US7102737B2 (en) | 1997-11-04 | 2006-09-05 | Micron Technology, Inc. | Method and apparatus for automated, in situ material detection using filtered fluoresced, reflected, or absorbed light |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20020507 |