JP2722273B2 - Cleaning treatment method - Google Patents
Cleaning treatment methodInfo
- Publication number
- JP2722273B2 JP2722273B2 JP2168510A JP16851090A JP2722273B2 JP 2722273 B2 JP2722273 B2 JP 2722273B2 JP 2168510 A JP2168510 A JP 2168510A JP 16851090 A JP16851090 A JP 16851090A JP 2722273 B2 JP2722273 B2 JP 2722273B2
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- water
- substance
- cleaning method
- lamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、洗浄処理方法に係り、特に半導体ウェハの
純水又は超純水による洗浄処理方法に関するものであ
る。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning method, and more particularly to a cleaning method for semiconductor wafers using pure water or ultrapure water.
集積回路技術においては、パターンの微細化、超高集
積化が進み、従来問題とされていたパーティクル、有機
物質、及び金属等による汚染ばかりでなく、ウェハの自
然酸化等も汚染源として問題となってきている。In integrated circuit technology, pattern miniaturization and ultra-high integration have progressed, and not only contamination due to particles, organic substances, metals and the like, which has been a problem in the past, but also natural oxidation of the wafer, etc., have become problems as contamination sources. ing.
ウェハの自然酸化膜を防止するためには、洗浄用の純
水又は超純水中の溶存酸素を減少させることが重要であ
るとされている。In order to prevent a natural oxide film on a wafer, it is important to reduce dissolved oxygen in pure water or ultrapure water for cleaning.
溶存酸素濃度数ppb程度の、現在の技術で極限まで溶
存酸素を減少させた超純水であれば、シリコンの自然酸
化は防止できることが確認されている。しかし、この場
合でも、空気中にごく僅かな時間でも暴露した場合に
は、自然酸化膜が形成されることが認められ、ウェハを
窒素ガスなどの不活性気体中、水蒸気中、あるいは溶剤
蒸気中に保持することによって、空気には暴露しない等
の対策が提案されている。It has been confirmed that spontaneous oxidation of silicon can be prevented with ultrapure water having a dissolved oxygen concentration of about a few ppb and dissolved oxygen reduced to the limit by the current technology. However, even in this case, when exposed to air for a very short time, it is recognized that a natural oxide film is formed, and the wafer is exposed to an inert gas such as nitrogen gas, water vapor, or solvent vapor. Measures such as not exposing to air are proposed.
しかしこれらの場合、シリコン表面は依然として活性
であり、ごく僅かな酸素の存在で、酸化される恐れがあ
る。However, in these cases, the silicon surface is still active and can be oxidized in the presence of very little oxygen.
また、現在の技術で極限まで溶存酸素を減少させた超
純水であっても、ウェハ上に配線されるアルミニウム等
の金属はシリコンより活性が大きいため、これら金属の
自然酸化を防止するためには不十分であると言われてい
る。In addition, even with ultrapure water in which dissolved oxygen has been reduced to the limit by the current technology, metals such as aluminum wired on the wafer are more active than silicon, so it is necessary to prevent natural oxidation of these metals. Is said to be inadequate.
上記のように、従来の洗浄処理方法では、半導体ウェ
ハの表面は、ごく僅かの酸素の混入で自然酸化を受けや
すい状態、すなわち表面汚染を受けやすい状態にある。As described above, in the conventional cleaning treatment method, the surface of the semiconductor wafer is in a state of being easily susceptible to natural oxidation due to entry of very little oxygen, that is, a state of being susceptible to surface contamination.
そこで、本発明は、上記の問題点を解決し、被洗浄
物、特に半導体ウェハ等の表面を制御して自然酸化を防
止できる洗浄処理方法を提供することを目的とする。Therefore, an object of the present invention is to solve the above problems and to provide a cleaning method capable of controlling a surface of an object to be cleaned, particularly a semiconductor wafer or the like, to prevent natural oxidation.
上記目的を達成するために、本発明では、被処理物質
を、水素を溶解させた純水又は超純水中に浸漬し、紫外
線照射することを特徴とする洗浄処理方法としたもので
ある。In order to achieve the above object, the present invention provides a cleaning method characterized by immersing a substance to be treated in pure water or ultrapure water in which hydrogen is dissolved, and irradiating with ultraviolet rays.
本発明の洗浄処理方法において、被処理物質としては
半導体ウェハに適用でき、また、純水又は超純水への水
素の溶解は、気体透過膜を介して行なうのがよい。In the cleaning treatment method of the present invention, the substance to be treated can be applied to a semiconductor wafer, and the dissolution of hydrogen in pure water or ultrapure water is preferably performed via a gas permeable membrane.
そして、紫外線の照射は、低圧水銀ランプを光源とし
て行ない、該ランプの保護管は、少なくとも一部が水中
にあり、被処理物質に対面する面と反対の面にはランプ
位置を焦点とする楕円反射鏡を設けているものを用いる
のが好適である。Irradiation with ultraviolet rays is performed using a low-pressure mercury lamp as a light source, and the protective tube of the lamp has at least a part in water, and an ellipse having a focal point at the lamp position on a surface opposite to a surface facing the substance to be treated. It is preferable to use one provided with a reflecting mirror.
水素を溶解させた水に紫外線に照射することによっ
て、水中の水素は光エネルギーを吸収し、活性化され
る。活性化された水素によって、半導体ウェハのシリコ
ンは表面が水素で終端されて酸化を受けにくい状態とな
る。また溶存酸素が僅かに残存している場合であって
も、活性化水素に存在によって還元性雰囲気になるた
め、ウェハ上のアルミニウムなどの金属の酸化は防止さ
れる。By irradiating the water in which the hydrogen is dissolved with ultraviolet rays, the hydrogen in the water absorbs light energy and is activated. The activated hydrogen terminates the surface of the silicon of the semiconductor wafer with hydrogen, and becomes less susceptible to oxidation. Further, even if a small amount of dissolved oxygen remains, the presence of the activated hydrogen creates a reducing atmosphere, so that oxidation of a metal such as aluminum on the wafer is prevented.
ここで、活性化水素の寿命は、吸収したエネルギーが
周辺の水に移行する等のため、秒単位に満たない、きわ
めて短時間と推定され、活性化水素が活性を失う前に半
導体ウェハ等に接触することが非常に重要である。Here, the lifetime of activated hydrogen is estimated to be extremely short, less than a second, because absorbed energy is transferred to surrounding water, etc., and the activated hydrogen is transferred to a semiconductor wafer or the like before the activated hydrogen loses its activity. Contact is very important.
本発明では、水素を溶解した水中に半導体ウェハ等を
浸漬した状態で、紫外線を照射することで、その問題を
解決した。In the present invention, the problem was solved by irradiating ultraviolet rays while immersing a semiconductor wafer or the like in water in which hydrogen was dissolved.
以下、本発明を実施例により具体的に説明するが、本
発明にこれに限定されるものではない。Hereinafter, the present invention will be described specifically with reference to Examples, but the present invention is not limited to these Examples.
実施例１ 第１図は、本発明の方法に用いる処理装置の実施態様
の一例を示す概略断面図である。また、第２図は、本処
理方法に用いる装置の紫外線光源の拡大概略断面図であ
る。Example 1 FIG. 1 is a schematic sectional view showing an example of an embodiment of a processing apparatus used in the method of the present invention. FIG. 2 is an enlarged schematic cross-sectional view of an ultraviolet light source of an apparatus used in the present processing method.
本処理装置は、洗浄処理槽５の上流側に水素溶解装置
３を有している。この水素溶解装置３は、気体透過膜４
を介して水素２を給水口１からの水に溶解させる装置で
ある。通常の水中に水素ガスを吹き込む方法では、過剰
の水素を供給する必要があるために、余剰水素が発生し
て処理が必要であるが、本装置は膜を介して水素を溶解
させる方法であるため、水に溶解される量のみの供給で
十分であり、余剰水素が発生せず、危険性がない。ま
た、本発明で水中に溶解させる水素は、飽和濃度に比較
してかなり少なくて十分であるため、処理中に水中の水
素が揮散することもない。なお、排水中に残存する水素
は、この図には示していないが、必要であれば、触媒の
存在下で空気を吹き込むことで簡単に除去される。This processing apparatus has a hydrogen dissolving apparatus 3 on the upstream side of the cleaning processing tank 5. The hydrogen dissolving device 3 includes a gas permeable membrane 4
Is a device for dissolving hydrogen 2 in water from the water supply port 1 via In the method of blowing hydrogen gas into ordinary water, excess hydrogen needs to be supplied, so surplus hydrogen is generated and processing is required, but this device is a method of dissolving hydrogen through a membrane Therefore, it is sufficient to supply only the amount dissolved in water, and no excess hydrogen is generated, and there is no danger. Further, the amount of hydrogen dissolved in water in the present invention is considerably smaller than the saturation concentration and is sufficient, so that hydrogen in the water does not volatilize during the treatment. The hydrogen remaining in the wastewater is not shown in this figure, but can be easily removed by blowing air in the presence of a catalyst, if necessary.
洗浄処理槽５は、水素溶解水給水口６、オーバーフロ
ー機構７、排水口８、紫外線光源９、及び被処理物保持
機構10を有し、ウェハの技葉処理を行う。The cleaning treatment tank 5 has a hydrogen-dissolved water supply port 6, an overflow mechanism 7, a drain port 8, an ultraviolet light source 9, and a workpiece holding mechanism 10, and performs a technique for processing a wafer.
紫外線光源９としては、装置の簡易さ、照射波長等か
ら、低圧水銀ランプ14を用い、ランプ保護管12の少なく
とも一部が水中にあり、被処理物質に対面する面と反対
の面には、ランプ位置を焦点とする楕円反射鏡13を設け
ている。低圧水銀ランプ14から照射される光は、楕円反
射鏡13によって反射され、被処理物であるウェハ11の表
面近くの水に対して、垂直に集中的に照射される。すな
わち、被処理物表面近くの水中の水素が効率的に活性化
され、活性化水素による処理が効率的に行われる。As the ultraviolet light source 9, a low-pressure mercury lamp 14 is used because of the simplicity of the device and the irradiation wavelength, and at least a part of the lamp protection tube 12 is in water. An elliptical reflecting mirror 13 having a focal point at the lamp position is provided. Light emitted from the low-pressure mercury lamp 14 is reflected by the elliptical reflecting mirror 13 and is intensively irradiated vertically on water near the surface of the wafer 11 as an object to be processed. That is, the hydrogen in the water near the surface of the object is efficiently activated, and the activated hydrogen is efficiently treated.
以上述べたように、本発明の方法によれば、半導体ウ
ェハ等の被処理物質の、表面の自然酸化が防止される。As described above, according to the method of the present invention, natural oxidation of the surface of a substance to be processed such as a semiconductor wafer is prevented.
第１図は本発明の方法に用いる洗浄処理装置の実施態様
の一例を示す概略断面図、第２図は洗浄処理装置に用い
る紫外線光源の一例を示す概略断面図である。 1:給水口、2:溶解用水素、3:水素溶解装置、4:気体透過
膜、5:洗浄処理槽、6:水素溶解水給水口、7:オーバーフ
ロー機構、8:排水口、9:紫外線光源、10:被処理物保持
機構、11:被処理物（ウェハ）、12:ランプ保護管、13:
楕円反射鏡、14:低圧水銀ランプFIG. 1 is a schematic sectional view showing an example of an embodiment of a cleaning apparatus used in the method of the present invention, and FIG. 2 is a schematic sectional view showing an example of an ultraviolet light source used in the cleaning apparatus. 1: Water inlet, 2: Dissolved hydrogen, 3: Hydrogen dissolving device, 4: Gas permeable membrane, 5: Cleaning tank, 6: Hydrogen dissolved water inlet, 7: Overflow mechanism, 8: Drain outlet, 9: Ultraviolet light Light source, 10: workpiece holding mechanism, 11: workpiece (wafer), 12: lamp protection tube, 13:
Elliptical reflector, 14: low-pressure mercury lamp
───────────────────────────────────────────────────── フロントページの続き (72)発明者 中島 健 神奈川県藤沢市本藤沢４丁目２番１号 株式会社荏原総合研究所内 (72)発明者 嶋 弘之 東京都大田区羽田旭町11番１号 株式会 社荏原製作所内 (56)参考文献 特開 昭60−87893（ＪＰ，Ａ) 特開 平２−102714（ＪＰ，Ａ) 特開 平２−9494（ＪＰ，Ａ) 特開 昭63−33824（ＪＰ，Ａ) 特開 昭59−173184（ＪＰ，Ａ) 特開 平２−114527（ＪＰ，Ａ) 特開 平２−144914（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Ken Nakajima 4-2-1 Motofujisawa, Fujisawa-shi, Kanagawa Inside Ebara Research Institute, Inc. (72) Inventor Hiroyuki Shima 11-1 Haneda Asahi-cho, Ota-ku, Tokyo EBARA CORPORATION (56) References JP-A-60-87893 (JP, A) JP-A-2-102714 (JP, A) JP-A-2-9494 (JP, A) JP-A-63-33824 (JP, A) JP-A-59-173184 (JP, A) JP-A-2-114527 (JP, A) JP-A-2-144914 (JP, A)
Claims (4)
超純水中に浸漬し、紫外線照射することを特徴とする洗
浄処理方法。1. A cleaning method comprising immersing a substance to be treated in pure water or ultrapure water in which hydrogen is dissolved, and irradiating the substance with ultraviolet light.
１記載の洗浄処理方法。2. The cleaning method according to claim 1, wherein the substance to be processed is a semiconductor wafer.
過膜を介して行なう請求項１又は２記載の洗浄処理方
法。3. The cleaning method according to claim 1, wherein the dissolution of hydrogen in pure water or ultrapure water is performed via a gas permeable membrane.
し、該ランプの保護管は少なくとも一部が水中にあり、
被処理物質に対面する面と反対の面には、ランプ位置を
焦点とする楕円反射鏡を設けているものである請求項
１、２又は３記載の洗浄処理方法。4. The method of irradiating with ultraviolet light uses a low-pressure mercury lamp as a light source, and a protective tube of the lamp is at least partially in water.
4. The cleaning method according to claim 1, wherein an elliptical reflecting mirror focusing on a lamp position is provided on a surface opposite to a surface facing the substance to be treated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2168510A JP2722273B2 (en) | 1990-06-28 | 1990-06-28 | Cleaning treatment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2168510A JP2722273B2 (en) | 1990-06-28 | 1990-06-28 | Cleaning treatment method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0458528A JPH0458528A (en) | 1992-02-25 |
| JP2722273B2 true JP2722273B2 (en) | 1998-03-04 |
Family
ID=15869386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2168510A Expired - Fee Related JP2722273B2 (en) | 1990-06-28 | 1990-06-28 | Cleaning treatment method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2722273B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6233943A (en) * | 1985-08-02 | 1987-02-13 | Hitachi Constr Mach Co Ltd | Controller for manipulator |
| JP3049537B2 (en) * | 1995-02-03 | 2000-06-05 | 悌二 竹崎 | Fixation support method for biopsy sample, fixation support agent and embedding cassette |
| JP3590470B2 (en) * | 1996-03-27 | 2004-11-17 | アルプス電気株式会社 | Cleaning water generation method and cleaning method, and cleaning water generation device and cleaning device |
| JP3296405B2 (en) * | 1996-08-20 | 2002-07-02 | オルガノ株式会社 | Cleaning method and cleaning device for electronic component members |
| JP3394143B2 (en) * | 1996-12-16 | 2003-04-07 | 大日本スクリーン製造株式会社 | Substrate cleaning method and apparatus |
| MXPA03011983A (en) * | 2001-06-29 | 2004-03-26 | Miz Co Ltd | Method for antioxidation and antioxidative functional water. |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59173184A (en) * | 1983-03-23 | 1984-10-01 | Kurita Water Ind Ltd | Device for controlling specific resistance of ultrapure water |
| JPH0719764B2 (en) * | 1986-07-28 | 1995-03-06 | 大日本スクリ−ン製造株式会社 | Surface cleaning method |
| JPH01114527A (en) * | 1987-10-27 | 1989-05-08 | Fuji Heavy Ind Ltd | Torque split type four-wheel-drive vehicle |
| JPH01144914A (en) * | 1987-11-30 | 1989-06-07 | Akira Fukuhara | Fish preserve net with fixture free to attach and detach |
| JPH0249796B2 (en) * | 1988-06-29 | 1990-10-31 | Kurita Tech Service | YOZONSANSONOJOKYOSOCHI |
-
1990
- 1990-06-28 JP JP2168510A patent/JP2722273B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0458528A (en) | 1992-02-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |