CN101055422B - 用于透明基材的整合式测量室 - Google Patents
用于透明基材的整合式测量室 Download PDFInfo
- Publication number
- CN101055422B CN101055422B CN200610074815XA CN200610074815A CN101055422B CN 101055422 B CN101055422 B CN 101055422B CN 200610074815X A CN200610074815X A CN 200610074815XA CN 200610074815 A CN200610074815 A CN 200610074815A CN 101055422 B CN101055422 B CN 101055422B
- Authority
- CN
- China
- Prior art keywords
- transparent base
- measurement unit
- etch
- etch depth
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 title claims description 126
- 238000005530 etching Methods 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 61
- 230000008569 process Effects 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000006073 displacement reaction Methods 0.000 claims abstract description 24
- 238000005259 measurement Methods 0.000 claims description 75
- 238000006243 chemical reaction Methods 0.000 claims description 29
- 238000000059 patterning Methods 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 230000005540 biological transmission Effects 0.000 claims description 13
- 238000012546 transfer Methods 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 230000001915 proofreading effect Effects 0.000 claims description 3
- 238000012937 correction Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 239000010453 quartz Substances 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 23
- 230000010363 phase shift Effects 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 238000005516 engineering process Methods 0.000 description 14
- 239000012780 transparent material Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 125000003821 2-(trimethylsilyl)ethoxymethyl group Chemical group [H]C([H])([H])[Si](C([H])([H])[H])(C([H])([H])[H])C([H])([H])C(OC([H])([H])[*])([H])[H] 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 240000004859 Gamochaeta purpurea Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- BGTFCAQCKWKTRL-YDEUACAXSA-N chembl1095986 Chemical compound C1[C@@H](N)[C@@H](O)[C@H](C)O[C@H]1O[C@@H]([C@H]1C(N[C@H](C2=CC(O)=CC(O[C@@H]3[C@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O)=C2C=2C(O)=CC=C(C=2)[C@@H](NC(=O)[C@@H]2NC(=O)[C@@H]3C=4C=C(C(=C(O)C=4)C)OC=4C(O)=CC=C(C=4)[C@@H](N)C(=O)N[C@@H](C(=O)N3)[C@H](O)C=3C=CC(O4)=CC=3)C(=O)N1)C(O)=O)=O)C(C=C1)=CC=C1OC1=C(O[C@@H]3[C@H]([C@H](O)[C@@H](O)[C@H](CO[C@@H]5[C@H]([C@@H](O)[C@H](O)[C@@H](C)O5)O)O3)O[C@@H]3[C@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O[C@@H]3[C@H]([C@H](O)[C@@H](CO)O3)O)C4=CC2=C1 BGTFCAQCKWKTRL-YDEUACAXSA-N 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- -1 for example contact Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Images
Abstract
Description
Claims (18)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200610074815XA CN101055422B (zh) | 2006-04-14 | 2006-04-14 | 用于透明基材的整合式测量室 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200610074815XA CN101055422B (zh) | 2006-04-14 | 2006-04-14 | 用于透明基材的整合式测量室 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101055422A CN101055422A (zh) | 2007-10-17 |
CN101055422B true CN101055422B (zh) | 2012-05-02 |
Family
ID=38795318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200610074815XA Expired - Fee Related CN101055422B (zh) | 2006-04-14 | 2006-04-14 | 用于透明基材的整合式测量室 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101055422B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009073865A1 (en) * | 2007-12-06 | 2009-06-11 | Intevac, Inc. | System and method for dual-sided sputter etch of substrates |
CN102438841A (zh) * | 2009-03-23 | 2012-05-02 | 因特瓦克公司 | 用于图案化介质中的岛与沟槽的比值优化的工艺 |
BR112015003829B1 (pt) | 2012-08-22 | 2021-08-10 | Becton Dickinson And Company | Copolímeros anfifílicos de enxerto, processo para preparação dos mesmos, aditivo, compatibilizador, elastômero termoplástico e película em rede superior respirável |
US10840102B2 (en) | 2013-11-27 | 2020-11-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated system, integrated system operation method and film treatment method |
CN104882389B (zh) * | 2014-02-28 | 2017-12-26 | 无锡华润上华科技有限公司 | 一种半导体器件量测方法 |
US20180086905A1 (en) | 2016-09-26 | 2018-03-29 | Becton, Dickinson And Company | Enhancing Bond Strength Of Medical Devices |
US11111362B2 (en) | 2016-09-26 | 2021-09-07 | Becton, Dickinson And Company | Breathable films with microbial barrier properties |
US20180086902A1 (en) | 2016-09-26 | 2018-03-29 | Becton, Dickinson And Company | Enhancing Bond Strength Of Medical Devices |
US10654979B2 (en) | 2017-08-18 | 2020-05-19 | Becton, Dickinson And Company | Amphiphilic graft copolymers |
CN112133631B (zh) * | 2020-09-25 | 2022-11-18 | 上海华力微电子有限公司 | 改善栅极刻蚀形貌稳定性的方法和刻蚀设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6161054A (en) * | 1997-09-22 | 2000-12-12 | On-Line Technologies, Inc. | Cell control method and apparatus |
US6413147B1 (en) * | 1993-09-16 | 2002-07-02 | Herbert E. Litvak | Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment |
CN1619788A (zh) * | 2003-06-18 | 2005-05-25 | 应用材料有限公司 | 用于监测—蚀刻工艺的方法与系统 |
-
2006
- 2006-04-14 CN CN200610074815XA patent/CN101055422B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6413147B1 (en) * | 1993-09-16 | 2002-07-02 | Herbert E. Litvak | Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment |
US6161054A (en) * | 1997-09-22 | 2000-12-12 | On-Line Technologies, Inc. | Cell control method and apparatus |
CN1619788A (zh) * | 2003-06-18 | 2005-05-25 | 应用材料有限公司 | 用于监测—蚀刻工艺的方法与系统 |
Non-Patent Citations (1)
Title |
---|
Turgut Sahin,Corey Collard,ect.Integrated phase shift measurements for advanced mask etchprocess control.THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERINGvol.5256.2003,vol.525676-84. * |
Also Published As
Publication number | Publication date |
---|---|
CN101055422A (zh) | 2007-10-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101055422B (zh) | 用于透明基材的整合式测量室 | |
TWI375288B (en) | Integrated metrology chamber for transparent substrates | |
KR102190305B1 (ko) | 메트롤로지 방법, 메트롤로지 장치 및 디바이스 제조 방법 | |
US10254644B2 (en) | Metrology methods, metrology apparatus and device manufacturing method | |
US6819426B2 (en) | Overlay alignment metrology using diffraction gratings | |
KR102010941B1 (ko) | 계측 방법, 계측 장치 및 디바이스 제조 방법 | |
US6281974B1 (en) | Method and apparatus for measurements of patterned structures | |
US10359377B2 (en) | Beam shaping slit for small spot size transmission small angle X-ray scatterometry | |
KR101188385B1 (ko) | 에칭 처리에서 계측을 함께 실시하기 위한 방법 및 장치 | |
US6476920B1 (en) | Method and apparatus for measurements of patterned structures | |
JP5025882B2 (ja) | スキャタロメトリ識別法を利用したオーバーレイ測定 | |
CN100382233C (zh) | 监测处理室中处理的方法以及基底处理设备 | |
US7250309B2 (en) | Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control | |
US20050146729A1 (en) | Method and appratus for measurements of patterned structures | |
EP3435161A1 (en) | Determining an edge roughness parameter of a periodic structure | |
JP2004095925A (ja) | アライメント方法、アライメント基板、アライメント基板の製造方法、露光方法、露光装置およびマスクの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1114426 Country of ref document: HK |
|
C53 | Correction of patent for invention or patent application | ||
CB02 | Change of applicant information |
Address after: American California Applicant after: Applied Materials Inc. Address before: American California Applicant before: Applied Materials Inc. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1114426 Country of ref document: HK |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120502 Termination date: 20160414 |