JP2003518738A5 - - Google Patents
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- Publication number
- JP2003518738A5 JP2003518738A5 JP2001547641A JP2001547641A JP2003518738A5 JP 2003518738 A5 JP2003518738 A5 JP 2003518738A5 JP 2001547641 A JP2001547641 A JP 2001547641A JP 2001547641 A JP2001547641 A JP 2001547641A JP 2003518738 A5 JP2003518738 A5 JP 2003518738A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/467,560 US6491835B1 (en) | 1999-12-20 | 1999-12-20 | Metal mask etching of silicon |
| US09/467,560 | 1999-12-20 | ||
| PCT/US2000/034684 WO2001047005A1 (en) | 1999-12-20 | 2000-12-20 | Metal mask etching of silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003518738A JP2003518738A (ja) | 2003-06-10 |
| JP2003518738A5 true JP2003518738A5 (enExample) | 2008-02-14 |
Family
ID=23856200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001547641A Pending JP2003518738A (ja) | 1999-12-20 | 2000-12-20 | シリコンの金属マスクエッチング方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6491835B1 (enExample) |
| EP (1) | EP1240665A1 (enExample) |
| JP (1) | JP2003518738A (enExample) |
| KR (1) | KR100808049B1 (enExample) |
| WO (1) | WO2001047005A1 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10204222B4 (de) * | 2002-01-31 | 2005-12-01 | Infineon Technologies Ag | Verfahren zur Seitenwandpassivierung beim Plasmaätzen |
| DE10237249B4 (de) * | 2002-08-14 | 2014-12-18 | Excelitas Technologies Singapore Pte Ltd | Verfahren zum selektiven Abtragen von Material aus der Oberfläche eines Substrats |
| KR101155841B1 (ko) * | 2003-03-03 | 2012-06-20 | 램 리써치 코포레이션 | 이중 도핑된 게이트 애플리케이션에서 프로파일 제어 및ｎ／ｐ 로딩을 개선하는 방법 |
| US7098141B1 (en) * | 2003-03-03 | 2006-08-29 | Lam Research Corporation | Use of silicon containing gas for CD and profile feature enhancements of gate and shallow trench structures |
| US7141505B2 (en) * | 2003-06-27 | 2006-11-28 | Lam Research Corporation | Method for bilayer resist plasma etch |
| DE10331526A1 (de) * | 2003-07-11 | 2005-02-03 | Infineon Technologies Ag | Verfahren zum anisotropen Ätzen einer Ausnehmung in ein Siliziumsubstrat und Verwendung einer Plasmaätzanlage |
| US20050227382A1 (en) * | 2004-04-02 | 2005-10-13 | Hui Angela T | In-situ surface treatment for memory cell formation |
| US20050269286A1 (en) * | 2004-06-08 | 2005-12-08 | Manish Sharma | Method of fabricating a nano-wire |
| JP4982962B2 (ja) * | 2005-04-14 | 2012-07-25 | 富士電機株式会社 | 半導体装置の製造方法 |
| US7344954B2 (en) * | 2006-01-03 | 2008-03-18 | United Microelectonics Corp. | Method of manufacturing a capacitor deep trench and of etching a deep trench opening |
| KR101059709B1 (ko) * | 2006-07-14 | 2011-08-29 | 가부시키가이샤 알박 | 반도체 장치의 제조 방법 |
| JP2008098281A (ja) * | 2006-10-10 | 2008-04-24 | Toshiba Corp | 半導体装置の製造方法 |
| US7704849B2 (en) * | 2007-12-03 | 2010-04-27 | Micron Technology, Inc. | Methods of forming trench isolation in silicon of a semiconductor substrate by plasma |
| JP5710267B2 (ja) | 2007-12-21 | 2015-04-30 | ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ | シリコン構造体の製造及びプロファイル制御を伴うシリコンディープエッチング |
| US8173547B2 (en) * | 2008-10-23 | 2012-05-08 | Lam Research Corporation | Silicon etch with passivation using plasma enhanced oxidation |
| US9018098B2 (en) * | 2008-10-23 | 2015-04-28 | Lam Research Corporation | Silicon etch with passivation using chemical vapor deposition |
| CN102590924B (zh) * | 2011-01-07 | 2014-08-20 | 志圣工业股份有限公司 | 导光板制造方法、导光板及罩板 |
| US8993437B2 (en) | 2011-10-27 | 2015-03-31 | Infineon Technologies Ag | Method for etching substrate |
| JP6081176B2 (ja) * | 2012-12-12 | 2017-02-15 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
| JP6396819B2 (ja) * | 2015-02-03 | 2018-09-26 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US11158540B2 (en) * | 2017-05-26 | 2021-10-26 | Applied Materials, Inc. | Light-absorbing mask for hybrid laser scribing and plasma etch wafer singulation process |
| CN109698274B (zh) | 2017-10-23 | 2021-05-25 | 联华电子股份有限公司 | 电容的制作方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3795557A (en) * | 1972-05-12 | 1974-03-05 | Lfe Corp | Process and material for manufacturing semiconductor devices |
| DE3026911A1 (de) * | 1980-07-16 | 1982-02-04 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zum hochfrequenz-kathodenzerstaeubungs-aetzen von loechern in einem substrat |
| EP0222739A3 (de) | 1985-11-13 | 1989-10-04 | IMS Ionen Mikrofabrikations Systeme Gesellschaft m.b.H. | Verfahren zur Herstellung einer Transmissionsmaske |
| RU2009576C1 (ru) | 1991-05-12 | 1994-03-15 | Концерн "Зейф" | Способ изготовления структур кремний на диэлектрике |
| US5368685A (en) | 1992-03-24 | 1994-11-29 | Hitachi, Ltd. | Dry etching apparatus and method |
| JP3334911B2 (ja) | 1992-07-31 | 2002-10-15 | キヤノン株式会社 | パターン形成方法 |
| JPH06151382A (ja) * | 1992-11-11 | 1994-05-31 | Toshiba Corp | ドライエッチング方法 |
| US5536364A (en) | 1993-06-04 | 1996-07-16 | Nippon Soken, Inc. | Process of plasma etching silicon |
| JP3178223B2 (ja) * | 1994-03-10 | 2001-06-18 | 富士電機株式会社 | ダイヤフラムの製造方法 |
| JP3309620B2 (ja) | 1995-01-27 | 2002-07-29 | 富士電機株式会社 | ドライエッチングによる部品の製造方法 |
| US5605603A (en) | 1995-03-29 | 1997-02-25 | International Business Machines Corporation | Deep trench process |
| JPH09289213A (ja) * | 1996-04-22 | 1997-11-04 | Sony Corp | 高融点金属配線形成方法 |
| US6127278A (en) * | 1997-06-02 | 2000-10-03 | Applied Materials, Inc. | Etch process for forming high aspect ratio trenched in silicon |
| JP3131595B2 (ja) * | 1997-09-22 | 2001-02-05 | 科学技術庁金属材料技術研究所長 | 反応性イオンエッチング用のマスク |
| US6287975B1 (en) | 1998-01-20 | 2001-09-11 | Tegal Corporation | Method for using a hard mask for critical dimension growth containment |
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1999
- 1999-12-20 US US09/467,560 patent/US6491835B1/en not_active Expired - Fee Related
-
2000
- 2000-12-20 EP EP00988213A patent/EP1240665A1/en not_active Withdrawn
- 2000-12-20 JP JP2001547641A patent/JP2003518738A/ja active Pending
- 2000-12-20 WO PCT/US2000/034684 patent/WO2001047005A1/en not_active Ceased
- 2000-12-20 KR KR1020027007832A patent/KR100808049B1/ko not_active Expired - Fee Related