JP2003512192A - ナノ構造体、その応用、およびその製造方法 - Google Patents
ナノ構造体、その応用、およびその製造方法Info
- Publication number
- JP2003512192A JP2003512192A JP2001533049A JP2001533049A JP2003512192A JP 2003512192 A JP2003512192 A JP 2003512192A JP 2001533049 A JP2001533049 A JP 2001533049A JP 2001533049 A JP2001533049 A JP 2001533049A JP 2003512192 A JP2003512192 A JP 2003512192A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- compound
- chamber
- laser beam
- nanostructure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 150000001875 compounds Chemical class 0.000 claims abstract description 28
- 238000004320 controlled atmosphere Methods 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 41
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 19
- 229910052582 BN Inorganic materials 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 10
- 239000002071 nanotube Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000003054 catalyst Substances 0.000 claims description 3
- 238000007872 degassing Methods 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 239000002074 nanoribbon Substances 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052790 beryllium Inorganic materials 0.000 claims description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims 1
- 230000003014 reinforcing effect Effects 0.000 claims 1
- 238000011282 treatment Methods 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010494 dissociation reaction Methods 0.000 description 3
- 230000005593 dissociations Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000004627 transmission electron microscopy Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000002717 carbon nanostructure Substances 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- -1 twists Substances 0.000 description 2
- 241000234282 Allium Species 0.000 description 1
- 235000002732 Allium cepa var. cepa Nutrition 0.000 description 1
- 241000252073 Anguilliformes Species 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004523 catalytic cracking Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- MELCCCHYSRGEEL-UHFFFAOYSA-N hafnium diboride Chemical compound [Hf]1B=B1 MELCCCHYSRGEEL-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052961 molybdenite Inorganic materials 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/901—Manufacture, treatment, or detection of nanostructure having step or means utilizing electromagnetic property, e.g. optical, x-ray, electron beamm
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Catalysts (AREA)
- Laser Beam Processing (AREA)
- Inorganic Fibers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR99/13532 | 1999-10-28 | ||
| FR9913532A FR2800365B1 (fr) | 1999-10-28 | 1999-10-28 | Procede d'obtention de nanostructures a partir de composes ayant une forme cristalline hexagonale |
| PCT/FR2000/003029 WO2001030689A1 (fr) | 1999-10-28 | 2000-10-30 | Nanostructures, leurs applications et leur procede d'elaboration |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003512192A true JP2003512192A (ja) | 2003-04-02 |
| JP2003512192A5 JP2003512192A5 (enExample) | 2011-09-01 |
Family
ID=9551500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001533049A Ceased JP2003512192A (ja) | 1999-10-28 | 2000-10-30 | ナノ構造体、その応用、およびその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6586093B1 (enExample) |
| EP (1) | EP1242304A1 (enExample) |
| JP (1) | JP2003512192A (enExample) |
| FR (1) | FR2800365B1 (enExample) |
| WO (1) | WO2001030689A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2022509079A (ja) * | 2018-11-16 | 2022-01-20 | ザ ユニバーシティ オブ ウェスタン オーストラリア | 窒化ホウ素ナノ構造体 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6515325B1 (en) | 2002-03-06 | 2003-02-04 | Micron Technology, Inc. | Nanotube semiconductor devices and methods for making the same |
| RU2212375C1 (ru) * | 2002-11-04 | 2003-09-20 | Фонд развития новых медицинских технологий "АЙРЭС" | Способ получения тонких пленок с фрактальной структурой |
| US7509961B2 (en) * | 2003-10-27 | 2009-03-31 | Philip Morris Usa Inc. | Cigarettes and cigarette components containing nanostructured fibril materials |
| US20050112048A1 (en) * | 2003-11-25 | 2005-05-26 | Loucas Tsakalakos | Elongated nano-structures and related devices |
| US8206674B2 (en) * | 2007-05-15 | 2012-06-26 | National Institute Of Aerospace Associates | Boron nitride nanotubes |
| US20090226361A1 (en) * | 2008-03-05 | 2009-09-10 | Jessica Campos-Delgado | Cvd-grown graphite nanoribbons |
| US20100192535A1 (en) * | 2009-02-04 | 2010-08-05 | Smith Michael W | Boron nitride nanotube fibrils and yarns |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04187761A (ja) * | 1990-11-20 | 1992-07-06 | Matsushita Electric Ind Co Ltd | レーザーアブレーション装置 |
| JPH07165406A (ja) * | 1993-10-19 | 1995-06-27 | Sony Corp | カーボンチューブの製造方法 |
| JPH09139209A (ja) * | 1995-11-15 | 1997-05-27 | Sony Corp | カーボン材料の構造制御方法 |
| JPH09320793A (ja) * | 1996-05-27 | 1997-12-12 | Nikon Corp | Ｘ線発生装置及びｘ線装置 |
| JPH10273308A (ja) * | 1997-03-27 | 1998-10-13 | Mitsubishi Chem Corp | 単原子層カーボンナノチューブの製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11273551A (ja) * | 1998-03-23 | 1999-10-08 | Nec Corp | 窒化ホウ素を用いた電子放出素子及びその製造方法 |
-
1999
- 1999-10-28 FR FR9913532A patent/FR2800365B1/fr not_active Expired - Fee Related
-
2000
- 2000-10-30 WO PCT/FR2000/003029 patent/WO2001030689A1/fr not_active Ceased
- 2000-10-30 JP JP2001533049A patent/JP2003512192A/ja not_active Ceased
- 2000-10-30 EP EP00974609A patent/EP1242304A1/fr not_active Withdrawn
- 2000-10-30 US US10/111,693 patent/US6586093B1/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04187761A (ja) * | 1990-11-20 | 1992-07-06 | Matsushita Electric Ind Co Ltd | レーザーアブレーション装置 |
| JPH07165406A (ja) * | 1993-10-19 | 1995-06-27 | Sony Corp | カーボンチューブの製造方法 |
| JPH09139209A (ja) * | 1995-11-15 | 1997-05-27 | Sony Corp | カーボン材料の構造制御方法 |
| JPH09320793A (ja) * | 1996-05-27 | 1997-12-12 | Nikon Corp | Ｘ線発生装置及びｘ線装置 |
| JPH10273308A (ja) * | 1997-03-27 | 1998-10-13 | Mitsubishi Chem Corp | 単原子層カーボンナノチューブの製造方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2022509079A (ja) * | 2018-11-16 | 2022-01-20 | ザ ユニバーシティ オブ ウェスタン オーストラリア | 窒化ホウ素ナノ構造体 |
| US12060267B2 (en) | 2018-11-16 | 2024-08-13 | Onalba Pty Ltd | Boron nitride nanostructures |
| JP7621579B2 (ja) | 2018-11-16 | 2025-01-27 | オナルバ プロプライエタリー リミテッド | 窒化ホウ素ナノ構造体 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6586093B1 (en) | 2003-07-01 |
| EP1242304A1 (fr) | 2002-09-25 |
| FR2800365B1 (fr) | 2003-09-26 |
| WO2001030689A1 (fr) | 2001-05-03 |
| FR2800365A1 (fr) | 2001-05-04 |
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