JP2003502841A5 - - Google Patents

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Publication number
JP2003502841A5
JP2003502841A5 JP2001503218A JP2001503218A JP2003502841A5 JP 2003502841 A5 JP2003502841 A5 JP 2003502841A5 JP 2001503218 A JP2001503218 A JP 2001503218A JP 2001503218 A JP2001503218 A JP 2001503218A JP 2003502841 A5 JP2003502841 A5 JP 2003502841A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001503218A
Other languages
Japanese (ja)
Other versions
JP2003502841A (ja
JP4245294B2 (ja
Filing date
Publication date
Priority claimed from US09/332,059 external-priority patent/US6329272B1/en
Application filed filed Critical
Publication of JP2003502841A publication Critical patent/JP2003502841A/ja
Publication of JP2003502841A5 publication Critical patent/JP2003502841A5/ja
Application granted granted Critical
Publication of JP4245294B2 publication Critical patent/JP4245294B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001503218A 1999-06-14 2000-06-13 半導体集積デバイスのインピーダンスをチューニングする方法および装置 Expired - Fee Related JP4245294B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/332,059 US6329272B1 (en) 1999-06-14 1999-06-14 Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source
US09/332,059 1999-06-14
PCT/CA2000/000715 WO2000077836A1 (en) 1999-06-14 2000-06-13 Method and apparatus for tuning the impedance of integrated semiconductor devices

Publications (3)

Publication Number Publication Date
JP2003502841A JP2003502841A (ja) 2003-01-21
JP2003502841A5 true JP2003502841A5 (enExample) 2005-11-17
JP4245294B2 JP4245294B2 (ja) 2009-03-25

Family

ID=23296552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001503218A Expired - Fee Related JP4245294B2 (ja) 1999-06-14 2000-06-13 半導体集積デバイスのインピーダンスをチューニングする方法および装置

Country Status (6)

Country Link
US (1) US6329272B1 (enExample)
EP (1) EP1188178A1 (enExample)
JP (1) JP4245294B2 (enExample)
AU (1) AU5382600A (enExample)
CA (2) CA2277607C (enExample)
WO (1) WO2000077836A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6335208B1 (en) 1999-05-10 2002-01-01 Intersil Americas Inc. Laser decapsulation method
EP1535333A1 (en) 2002-08-14 2005-06-01 Technologies Ltrim, Inc. Method for modifying the impedance of semiconductor devices using a focused heating source
CA2398166A1 (en) * 2002-08-14 2004-02-14 Technologies Ltrim Inc. Method for modifying the impedance of semiconductor devices using a focused heating source
US7714694B2 (en) * 2004-09-21 2010-05-11 Microbridge Technologies Canada, Inc. Compensating for linear and non-linear trimming-induced shift of temperature coefficient of resistance
US7261461B2 (en) * 2004-09-23 2007-08-28 Microbridge Technologies Inc. Measuring and trimming circuit components embedded in micro-platforms
US7426381B2 (en) * 2005-03-23 2008-09-16 Oracle International Corporation Device billing agent
US20070117227A1 (en) * 2005-11-23 2007-05-24 Gsi Group Corporation Method And System for Iteratively, Selectively Tuning A Parameter Of A Doped Workpiece Using A Pulsed Laser
CA2533225C (en) 2006-01-19 2016-03-22 Technologies Ltrim Inc. A tunable semiconductor component provided with a current barrier
US20090075402A1 (en) * 2007-09-18 2009-03-19 Michel Meunier Manipulation of focused heating source based on in situ optical measurements
JP5302937B2 (ja) * 2010-07-20 2013-10-02 株式会社イー・エム・ディー 不純物活性化方法、半導体装置の製造方法
US11240881B2 (en) 2019-04-08 2022-02-01 Watlow Electric Manufacturing Company Method of manufacturing and adjusting a resistive heater

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3191151A (en) 1962-11-26 1965-06-22 Fairchild Camera Instr Co Programmable circuit
JPS5633822A (en) 1979-08-29 1981-04-04 Hitachi Ltd Preparation of semiconductor device
US4298855A (en) 1980-08-26 1981-11-03 Honeywell Inc. Conductive polymer film humidity sensor
US4810663A (en) 1981-12-07 1989-03-07 Massachusetts Institute Of Technology Method of forming conductive path by low power laser pulse
US4585490A (en) 1981-12-07 1986-04-29 Massachusetts Institute Of Technology Method of making a conductive path in multi-layer metal structures by low power laser beam
US4694568A (en) 1982-01-07 1987-09-22 North American Philips Corporation Method of manufacturing chip resistors with edge around terminations
US4636404A (en) 1982-06-17 1987-01-13 Mass. Institute Of Technology Method and apparatus for forming low resistance lateral links in a semiconductor device
JPS59125121A (ja) 1982-12-29 1984-07-19 Fujitsu Ltd R―2rラダーデジタル―アナログ変換回路
DE3319605A1 (de) 1983-05-30 1984-12-06 Siemens AG, 1000 Berlin und 8000 München Sensor mit polykristallinen silicium-widerstaenden
GB8403968D0 (en) 1984-02-15 1984-03-21 Heraeus Gmbh W C Chip resistors
JPS59229838A (ja) 1984-05-21 1984-12-24 Hitachi Ltd 半導体集積回路
US4566936A (en) 1984-11-05 1986-01-28 North American Philips Corporation Method of trimming precision resistors
GB8531324D0 (en) 1985-12-19 1986-01-29 Gen Electric Co Plc Circuit arrangement
US4792779A (en) 1986-09-19 1988-12-20 Hughes Aircraft Company Trimming passive components buried in multilayer structures
US4843034A (en) 1987-06-12 1989-06-27 Massachusetts Institute Of Technology Fabrication of interlayer conductive paths in integrated circuits
JPH0718964B2 (ja) 1987-06-29 1995-03-06 日本電信電話株式会社 集積光デバイスおよびその製造方法
US5075241A (en) 1988-01-29 1991-12-24 Texas Instruments Incorporated Method of forming a recessed contact bipolar transistor and field effect device
US4937475B1 (en) 1988-09-19 1994-03-29 Massachusetts Inst Technology Laser programmable integrated circuit
US4929923A (en) 1989-05-26 1990-05-29 Harris Corporation Thin film resistors and method of trimming
US5124596A (en) 1989-09-18 1992-06-23 Analog Devices, Inc. Single-temperature-trimmable fet input circuit having active channel segments of different areas
US5284794A (en) 1990-02-21 1994-02-08 Nippondenso Co., Ltd. Method of making semiconductor device using a trimmable thin-film resistor
JP2664793B2 (ja) 1990-04-06 1997-10-22 株式会社東芝 半導体装置の製造方法
IL94340A (en) 1990-05-09 1994-05-30 Vishay Israel Ltd Selectable high precision resistor and technique for production thereof
US5119538A (en) 1990-08-10 1992-06-09 Ranco Incorporated Of Delaware Method of making a temperature sensor
JP2725714B2 (ja) 1991-01-04 1998-03-11 シャープ株式会社 Ccd固体撮像素子
US5110758A (en) 1991-06-03 1992-05-05 Motorola, Inc. Method of heat augmented resistor trimming
US5233327A (en) 1991-07-01 1993-08-03 International Business Machines Corporation Active resistor trimming by differential annealing
US5262615A (en) 1991-11-05 1993-11-16 Honeywell Inc. Film resistor made by laser trimming
US5209122A (en) 1991-11-20 1993-05-11 Delco Electronics Corporation Pressurer sensor and method for assembly of same
JP2524049B2 (ja) 1992-03-30 1996-08-14 株式会社日立製作所 半導体集積回路およびその製造方法
JPH0613549A (ja) 1992-06-25 1994-01-21 Seiko Epson Corp 半導体装置
US5389956A (en) 1992-08-18 1995-02-14 Xerox Corporation Techniques for improving droplet uniformity in acoustic ink printing
US5420515A (en) 1992-08-28 1995-05-30 Hewlett-Packard Company Active circuit trimming with AC and DC response trims relative to a known response
US5265114C1 (en) 1992-09-10 2001-08-21 Electro Scient Ind Inc System and method for selectively laser processing a target structure of one or more materials of a multimaterial multilayer device
GB2276725B (en) 1993-04-01 1996-10-02 Ford Motor Co Calibrating a mass air flow sensor
EP0620586B1 (en) 1993-04-05 2001-06-20 Denso Corporation Semiconductor device having thin film resistor
GB9406900D0 (en) * 1994-04-07 1994-06-01 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin -film transistors
US5507171A (en) 1994-04-15 1996-04-16 Ssi Technologies, Inc. Electronic circuit for a transducer
US5685995A (en) 1994-11-22 1997-11-11 Electro Scientific Industries, Inc. Method for laser functional trimming of films and devices

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