JP2003347279A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JP2003347279A JP2003347279A JP2002151302A JP2002151302A JP2003347279A JP 2003347279 A JP2003347279 A JP 2003347279A JP 2002151302 A JP2002151302 A JP 2002151302A JP 2002151302 A JP2002151302 A JP 2002151302A JP 2003347279 A JP2003347279 A JP 2003347279A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- silicon nitride
- nitride film
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 238000005530 etching Methods 0.000 claims abstract description 131
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 88
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 50
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 38
- 238000000295 emission spectrum Methods 0.000 claims abstract description 36
- 239000007789 gas Substances 0.000 claims abstract description 35
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 31
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 24
- 238000001020 plasma etching Methods 0.000 claims abstract description 7
- 239000007795 chemical reaction product Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 12
- 238000012544 monitoring process Methods 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000003667 anti-reflective effect Effects 0.000 abstract 3
- 239000006227 byproduct Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- 239000013307 optical fiber Substances 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 229920006254 polymer film Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000004611 spectroscopical analysis Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- -1 tungsten nitride Chemical class 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 101100366710 Arabidopsis thaliana SSL12 gene Proteins 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101150042515 DA26 gene Proteins 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 101100222172 Mus musculus Cst10 gene Proteins 0.000 description 1
- 101100366563 Panax ginseng SS13 gene Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002151302A JP2003347279A (ja) | 2002-05-24 | 2002-05-24 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002151302A JP2003347279A (ja) | 2002-05-24 | 2002-05-24 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003347279A true JP2003347279A (ja) | 2003-12-05 |
| JP2003347279A5 JP2003347279A5 (enExample) | 2005-09-29 |
Family
ID=29768934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002151302A Pending JP2003347279A (ja) | 2002-05-24 | 2002-05-24 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003347279A (enExample) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006313833A (ja) * | 2005-05-09 | 2006-11-16 | Seiko Epson Corp | 強誘電体キャパシタの形成方法、強誘電体キャパシタおよび電子デバイス |
| JP2009503852A (ja) * | 2005-07-29 | 2009-01-29 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | ドライエッチプロセスを使用してアンダーバンプメタル層を効率的にパターニングする技術 |
| JP2009506531A (ja) * | 2005-08-23 | 2009-02-12 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 磁気デバイスおよびその形成方法 |
| JP2009064935A (ja) * | 2007-09-06 | 2009-03-26 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| JPWO2007142172A1 (ja) * | 2006-06-09 | 2009-10-22 | 日本電気株式会社 | 多層配線製造方法と多層配線構造と多層配線製造装置 |
| JP2009295859A (ja) * | 2008-06-06 | 2009-12-17 | Oki Semiconductor Co Ltd | 半導体装置および半導体装置の製造方法 |
| WO2011158319A1 (ja) * | 2010-06-14 | 2011-12-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| WO2018220973A1 (ja) * | 2017-05-30 | 2018-12-06 | 東京エレクトロン株式会社 | エッチング方法 |
| JP2018207088A (ja) * | 2017-05-30 | 2018-12-27 | 東京エレクトロン株式会社 | エッチング方法 |
-
2002
- 2002-05-24 JP JP2002151302A patent/JP2003347279A/ja active Pending
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006313833A (ja) * | 2005-05-09 | 2006-11-16 | Seiko Epson Corp | 強誘電体キャパシタの形成方法、強誘電体キャパシタおよび電子デバイス |
| JP2009503852A (ja) * | 2005-07-29 | 2009-01-29 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | ドライエッチプロセスを使用してアンダーバンプメタル層を効率的にパターニングする技術 |
| JP4939537B2 (ja) * | 2005-08-23 | 2012-05-30 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 磁気デバイスおよびその形成方法 |
| JP2009506531A (ja) * | 2005-08-23 | 2009-02-12 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 磁気デバイスおよびその形成方法 |
| JPWO2007142172A1 (ja) * | 2006-06-09 | 2009-10-22 | 日本電気株式会社 | 多層配線製造方法と多層配線構造と多層配線製造装置 |
| JP2009064935A (ja) * | 2007-09-06 | 2009-03-26 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| JP2009295859A (ja) * | 2008-06-06 | 2009-12-17 | Oki Semiconductor Co Ltd | 半導体装置および半導体装置の製造方法 |
| JP5684254B2 (ja) * | 2010-06-14 | 2015-03-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| WO2011158319A1 (ja) * | 2010-06-14 | 2011-12-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US9030014B2 (en) | 2010-06-14 | 2015-05-12 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the same |
| US9337016B2 (en) | 2010-06-14 | 2016-05-10 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the same |
| US10049984B2 (en) | 2010-06-14 | 2018-08-14 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the same |
| US10418328B2 (en) | 2010-06-14 | 2019-09-17 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the same |
| US11515257B2 (en) | 2010-06-14 | 2022-11-29 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the same |
| US12362280B2 (en) | 2010-06-14 | 2025-07-15 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the same |
| WO2018220973A1 (ja) * | 2017-05-30 | 2018-12-06 | 東京エレクトロン株式会社 | エッチング方法 |
| JP2018207088A (ja) * | 2017-05-30 | 2018-12-27 | 東京エレクトロン株式会社 | エッチング方法 |
| US11127597B2 (en) | 2017-05-30 | 2021-09-21 | Tokyo Electron Limited | Etching method |
| JP7109165B2 (ja) | 2017-05-30 | 2022-07-29 | 東京エレクトロン株式会社 | エッチング方法 |
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