JP2003338636A - 発光素子の製造方法、発光ダイオード、及び半導体レーザ素子 - Google Patents

発光素子の製造方法、発光ダイオード、及び半導体レーザ素子

Info

Publication number
JP2003338636A
JP2003338636A JP2003067250A JP2003067250A JP2003338636A JP 2003338636 A JP2003338636 A JP 2003338636A JP 2003067250 A JP2003067250 A JP 2003067250A JP 2003067250 A JP2003067250 A JP 2003067250A JP 2003338636 A JP2003338636 A JP 2003338636A
Authority
JP
Japan
Prior art keywords
substrate
wafer
groove
semiconductor layer
cutting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003067250A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003338636A5 (enExample
Inventor
Fumitsugu Fukuyo
文嗣 福世
Kenji Fukumitsu
憲志 福満
Naoki Uchiyama
直己 内山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP2003067250A priority Critical patent/JP2003338636A/ja
Publication of JP2003338636A publication Critical patent/JP2003338636A/ja
Publication of JP2003338636A5 publication Critical patent/JP2003338636A5/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Lasers (AREA)
  • Laser Beam Processing (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2003067250A 2002-03-12 2003-03-12 発光素子の製造方法、発光ダイオード、及び半導体レーザ素子 Pending JP2003338636A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003067250A JP2003338636A (ja) 2002-03-12 2003-03-12 発光素子の製造方法、発光ダイオード、及び半導体レーザ素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002067372 2002-03-12
JP2002-67372 2002-03-12
JP2003067250A JP2003338636A (ja) 2002-03-12 2003-03-12 発光素子の製造方法、発光ダイオード、及び半導体レーザ素子

Publications (2)

Publication Number Publication Date
JP2003338636A true JP2003338636A (ja) 2003-11-28
JP2003338636A5 JP2003338636A5 (enExample) 2006-04-27

Family

ID=29714044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003067250A Pending JP2003338636A (ja) 2002-03-12 2003-03-12 発光素子の製造方法、発光ダイオード、及び半導体レーザ素子

Country Status (1)

Country Link
JP (1) JP2003338636A (enExample)

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003338652A (ja) * 2002-03-12 2003-11-28 Hamamatsu Photonics Kk 半導体レーザ素子の製造方法及び半導体レーザ素子
WO2005062376A1 (en) 2003-12-11 2005-07-07 Cree, Inc. Semiconductor substrate assemblies and methods for preparing and dicing the same
JP2006019586A (ja) * 2004-07-02 2006-01-19 Sanyo Electric Co Ltd 窒化物半導体発光素子の製造方法
JP2007160400A (ja) * 2005-11-16 2007-06-28 Denso Corp レーザダイシング方法
JP2008098465A (ja) * 2006-10-13 2008-04-24 Aisin Seiki Co Ltd 半導体発光素子の分離方法
KR100858983B1 (ko) 2005-11-16 2008-09-17 가부시키가이샤 덴소 반도체 장치 및 반도체 기판 다이싱 방법
JP2008235750A (ja) * 2007-03-23 2008-10-02 Seiko Epson Corp レーザ素子、レーザ光源の製造方法、レーザ光源、照明装置、モニタ装置及びプロジェクタ
JP2009032795A (ja) * 2007-07-25 2009-02-12 Rohm Co Ltd 窒化物半導体発光素子の製造方法
JP2009154178A (ja) * 2007-12-26 2009-07-16 Murata Mfg Co Ltd 多層基板の製造方法
JP2010091562A (ja) * 2008-10-10 2010-04-22 ３Ｄ−マイクロマック アーゲー 透過型電子顕微鏡法用サンプルの作成方法および装置
WO2010011048A3 (ko) * 2008-07-22 2010-05-14 엘지이노텍주식회사 반도체 발광소자 및 그 제조방법
US7749867B2 (en) 2002-03-12 2010-07-06 Hamamatsu Photonics K.K. Method of cutting processed object
JP2011040564A (ja) * 2009-08-11 2011-02-24 Toshiba Corp 半導体素子の製造方法および製造装置
CN102217103A (zh) * 2008-10-24 2011-10-12 艾比维利股份有限公司 Ⅲ族氮化物半导体发光器件
JP2011223041A (ja) * 2011-08-05 2011-11-04 Toyoda Gosei Co Ltd 半導体発光素子の分離方法
WO2011145370A1 (ja) * 2010-05-18 2011-11-24 昭和電工株式会社 半導体発光チップおよび基板の加工方法
US8227724B2 (en) 2000-09-13 2012-07-24 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US8247734B2 (en) 2003-03-11 2012-08-21 Hamamatsu Photonics K.K. Laser beam machining method
JP2012227187A (ja) * 2011-04-15 2012-11-15 Showa Denko Kk 半導体発光チップの製造方法および半導体発光チップ
US8314013B2 (en) 2002-03-12 2012-11-20 Hamamatsu Photonics K.K. Semiconductor chip manufacturing method
JP2013051260A (ja) * 2011-08-30 2013-03-14 Toyoda Gosei Co Ltd 半導体発光チップの製造方法および半導体発光チップ
US8450187B2 (en) 2002-12-03 2013-05-28 Hamamatsu Photonics K.K. Method of cutting semiconductor substrate
EP2230042A3 (en) * 2004-08-06 2014-08-13 Hamamatsu Photonics K.K. Laser processing method and semiconductor device
US8969752B2 (en) 2003-03-12 2015-03-03 Hamamatsu Photonics K.K. Laser processing method
JP2016076574A (ja) * 2014-10-06 2016-05-12 株式会社ディスコ ウエーハの分割方法
JP2016167552A (ja) * 2015-03-10 2016-09-15 株式会社ディスコ 単結晶基板の加工方法
US9640714B2 (en) 2013-08-29 2017-05-02 Nichia Corporation Method for manufacturing light emitting element

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1609559B1 (en) 2003-03-12 2007-08-08 Hamamatsu Photonics K. K. Laser beam machining method

Cited By (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8227724B2 (en) 2000-09-13 2012-07-24 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US10796959B2 (en) 2000-09-13 2020-10-06 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US9837315B2 (en) 2000-09-13 2017-12-05 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US8969761B2 (en) 2000-09-13 2015-03-03 Hamamatsu Photonics K.K. Method of cutting a wafer-like object and semiconductor chip
US8946589B2 (en) 2000-09-13 2015-02-03 Hamamatsu Photonics K.K. Method of cutting a substrate, method of cutting a wafer-like object, and method of manufacturing a semiconductor device
US8946591B2 (en) 2000-09-13 2015-02-03 Hamamatsu Photonics K.K. Method of manufacturing a semiconductor device formed using a substrate cutting method
US8946592B2 (en) 2000-09-13 2015-02-03 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US8937264B2 (en) 2000-09-13 2015-01-20 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US8283595B2 (en) 2000-09-13 2012-10-09 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
US9287177B2 (en) 2002-03-12 2016-03-15 Hamamatsu Photonics K.K. Substrate dividing method
US8314013B2 (en) 2002-03-12 2012-11-20 Hamamatsu Photonics K.K. Semiconductor chip manufacturing method
US11424162B2 (en) 2002-03-12 2022-08-23 Hamamatsu Photonics K.K. Substrate dividing method
US8889525B2 (en) 2002-03-12 2014-11-18 Hamamatsu Photonics K.K. Substrate dividing method
US10622255B2 (en) 2002-03-12 2020-04-14 Hamamatsu Photonics K.K. Substrate dividing method
US7749867B2 (en) 2002-03-12 2010-07-06 Hamamatsu Photonics K.K. Method of cutting processed object
US10068801B2 (en) 2002-03-12 2018-09-04 Hamamatsu Photonics K.K. Substrate dividing method
US8802543B2 (en) 2002-03-12 2014-08-12 Hamamatsu Photonics K.K. Laser processing method
US9711405B2 (en) 2002-03-12 2017-07-18 Hamamatsu Photonics K.K. Substrate dividing method
US9553023B2 (en) 2002-03-12 2017-01-24 Hamamatsu Photonics K.K. Substrate dividing method
US9548246B2 (en) 2002-03-12 2017-01-17 Hamamatsu Photonics K.K. Substrate dividing method
US9543256B2 (en) 2002-03-12 2017-01-10 Hamamatsu Photonics K.K. Substrate dividing method
US8673745B2 (en) 2002-03-12 2014-03-18 Hamamatsu Photonics K.K. Method of cutting object to be processed
US9543207B2 (en) 2002-03-12 2017-01-10 Hamamatsu Photonics K.K. Substrate dividing method
JP2003338652A (ja) * 2002-03-12 2003-11-28 Hamamatsu Photonics Kk 半導体レーザ素子の製造方法及び半導体レーザ素子
US8598015B2 (en) 2002-03-12 2013-12-03 Hamamatsu Photonics K.K. Laser processing method
US9142458B2 (en) 2002-03-12 2015-09-22 Hamamatsu Photonics K.K. Substrate dividing method
US8551865B2 (en) 2002-03-12 2013-10-08 Hamamatsu Photonics K.K. Method of cutting an object to be processed
US8518801B2 (en) 2002-03-12 2013-08-27 Hamamatsu Photonics K.K. Substrate dividing method
US8518800B2 (en) 2002-03-12 2013-08-27 Hamamatsu Photonics K.K. Substrate dividing method
US8519511B2 (en) 2002-03-12 2013-08-27 Hamamatsu Photonics K.K. Substrate dividing method
US8450187B2 (en) 2002-12-03 2013-05-28 Hamamatsu Photonics K.K. Method of cutting semiconductor substrate
US8865566B2 (en) 2002-12-03 2014-10-21 Hamamatsu Photonics K.K. Method of cutting semiconductor substrate
US8247734B2 (en) 2003-03-11 2012-08-21 Hamamatsu Photonics K.K. Laser beam machining method
US8969752B2 (en) 2003-03-12 2015-03-03 Hamamatsu Photonics K.K. Laser processing method
US7008861B2 (en) 2003-12-11 2006-03-07 Cree, Inc. Semiconductor substrate assemblies and methods for preparing and dicing the same
WO2005062376A1 (en) 2003-12-11 2005-07-07 Cree, Inc. Semiconductor substrate assemblies and methods for preparing and dicing the same
JP2006019586A (ja) * 2004-07-02 2006-01-19 Sanyo Electric Co Ltd 窒化物半導体発光素子の製造方法
EP2230042A3 (en) * 2004-08-06 2014-08-13 Hamamatsu Photonics K.K. Laser processing method and semiconductor device
KR100876137B1 (ko) 2005-11-16 2008-12-29 가부시키가이샤 덴소 반도체 장치 및 반도체 기판 다이싱 방법
JP2007160400A (ja) * 2005-11-16 2007-06-28 Denso Corp レーザダイシング方法
KR100925838B1 (ko) * 2005-11-16 2009-11-06 가부시키가이샤 덴소 반도체 장치 및 반도체 기판 다이싱 방법
KR100858983B1 (ko) 2005-11-16 2008-09-17 가부시키가이샤 덴소 반도체 장치 및 반도체 기판 다이싱 방법
JP2008098465A (ja) * 2006-10-13 2008-04-24 Aisin Seiki Co Ltd 半導体発光素子の分離方法
JP2008235750A (ja) * 2007-03-23 2008-10-02 Seiko Epson Corp レーザ素子、レーザ光源の製造方法、レーザ光源、照明装置、モニタ装置及びプロジェクタ
JP2009032795A (ja) * 2007-07-25 2009-02-12 Rohm Co Ltd 窒化物半導体発光素子の製造方法
JP2009154178A (ja) * 2007-12-26 2009-07-16 Murata Mfg Co Ltd 多層基板の製造方法
WO2010011048A3 (ko) * 2008-07-22 2010-05-14 엘지이노텍주식회사 반도체 발광소자 및 그 제조방법
JP2010091562A (ja) * 2008-10-10 2010-04-22 ３Ｄ−マイクロマック アーゲー 透過型電子顕微鏡法用サンプルの作成方法および装置
CN102217103A (zh) * 2008-10-24 2011-10-12 艾比维利股份有限公司 Ⅲ族氮化物半导体发光器件
JP2011040564A (ja) * 2009-08-11 2011-02-24 Toshiba Corp 半導体素子の製造方法および製造装置
JP2011243730A (ja) * 2010-05-18 2011-12-01 Showa Denko Kk 半導体発光チップおよび基板の加工方法
WO2011145370A1 (ja) * 2010-05-18 2011-11-24 昭和電工株式会社 半導体発光チップおよび基板の加工方法
US8836086B2 (en) 2010-05-18 2014-09-16 Toyoda Gosei Co., Ltd. Semiconductor light emitting chip and method for processing substrate
JP2012227187A (ja) * 2011-04-15 2012-11-15 Showa Denko Kk 半導体発光チップの製造方法および半導体発光チップ
JP2011223041A (ja) * 2011-08-05 2011-11-04 Toyoda Gosei Co Ltd 半導体発光素子の分離方法
JP2013051260A (ja) * 2011-08-30 2013-03-14 Toyoda Gosei Co Ltd 半導体発光チップの製造方法および半導体発光チップ
US9640714B2 (en) 2013-08-29 2017-05-02 Nichia Corporation Method for manufacturing light emitting element
US10084108B2 (en) 2013-08-29 2018-09-25 Nichia Corporation Method for manufacturing light emitting element
JP2016076574A (ja) * 2014-10-06 2016-05-12 株式会社ディスコ ウエーハの分割方法
JP2016167552A (ja) * 2015-03-10 2016-09-15 株式会社ディスコ 単結晶基板の加工方法

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