JP2003332508A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JP2003332508A
JP2003332508A JP2002142024A JP2002142024A JP2003332508A JP 2003332508 A JP2003332508 A JP 2003332508A JP 2002142024 A JP2002142024 A JP 2002142024A JP 2002142024 A JP2002142024 A JP 2002142024A JP 2003332508 A JP2003332508 A JP 2003332508A
Authority
JP
Japan
Prior art keywords
semiconductor device
metal
layer
film
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002142024A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003332508A5 (https=
Inventor
Kohei Yamada
耕平 山田
Yasuji Ichinose
八州治 一ノ瀬
Hiroyuki Nagase
弘幸 永瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2002142024A priority Critical patent/JP2003332508A/ja
Priority to TW092113235A priority patent/TWI256715B/zh
Priority to US10/514,471 priority patent/US20060079027A1/en
Priority to KR10-2004-7018376A priority patent/KR20050007394A/ko
Priority to PCT/JP2003/006113 priority patent/WO2003098687A1/ja
Publication of JP2003332508A publication Critical patent/JP2003332508A/ja
Publication of JP2003332508A5 publication Critical patent/JP2003332508A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/014—Manufacture or treatment using batch processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7424—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self-supporting substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/654—Top-view layouts
    • H10W70/656—Fan-in layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2002142024A 2002-05-16 2002-05-16 半導体装置及びその製造方法 Pending JP2003332508A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002142024A JP2003332508A (ja) 2002-05-16 2002-05-16 半導体装置及びその製造方法
TW092113235A TWI256715B (en) 2002-05-16 2003-05-15 Semiconductor device and its manufacturing method
US10/514,471 US20060079027A1 (en) 2002-05-16 2003-05-16 Semiconductor device and its manufacturing method
KR10-2004-7018376A KR20050007394A (ko) 2002-05-16 2003-05-16 반도체장치 및 그 제조방법
PCT/JP2003/006113 WO2003098687A1 (en) 2002-05-16 2003-05-16 Semiconductor device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002142024A JP2003332508A (ja) 2002-05-16 2002-05-16 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003332508A true JP2003332508A (ja) 2003-11-21
JP2003332508A5 JP2003332508A5 (https=) 2005-09-29

Family

ID=29544967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002142024A Pending JP2003332508A (ja) 2002-05-16 2002-05-16 半導体装置及びその製造方法

Country Status (5)

Country Link
US (1) US20060079027A1 (https=)
JP (1) JP2003332508A (https=)
KR (1) KR20050007394A (https=)
TW (1) TWI256715B (https=)
WO (1) WO2003098687A1 (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303314A (ja) * 2005-04-22 2006-11-02 Koa Corp 位置補正用チップ部品およびその製造方法
JP2007115774A (ja) * 2005-10-18 2007-05-10 Nec Electronics Corp 半導体装置の製造方法
KR100753795B1 (ko) 2006-06-27 2007-08-31 하나 마이크론(주) 반도체 패키지 및 그 제조 방법
JP2008251912A (ja) * 2007-03-30 2008-10-16 Nec Corp 半導体装置及びその製造方法
JP2008263234A (ja) * 2008-07-17 2008-10-30 Hitachi Chem Co Ltd 半導体チップ搭載基板及び半導体パッケージ、並びにそれらの製造方法
JP2010288448A (ja) * 2009-06-09 2010-12-24 Semikron Elektronik Gmbh & Co Kg 冷却装置を備えて成る電流コンバータ装置構造を製造する方法と電流コンバータ装置構造
JP2012244160A (ja) * 2011-05-20 2012-12-10 Kyokutoku Kagi Kofun Yugenkoshi パッケージ構造およびその製造方法
JP2013254927A (ja) * 2012-06-07 2013-12-19 Kyokutoku Kagi Kofun Yugenkoshi パッケージキャリアボード及びその製造方法

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KR100442699B1 (ko) * 2002-07-19 2004-08-02 삼성전자주식회사 인접 수동소자 칩이 전기적으로 연결된 웨이퍼, 수동소자및 이를 이용한 반도체 패키지
KR20060131327A (ko) * 2005-06-16 2006-12-20 엘지전자 주식회사 발광 다이오드의 제조 방법
FR2937765B1 (fr) * 2008-10-27 2010-12-17 Smart Packaging Solutions Sps Procede de montage de composants passifs sur un objet portable de faible epaisseur, et objet portable ainsi obtenu
EP2309535A1 (en) 2009-10-09 2011-04-13 Telefonaktiebolaget L M Ericsson (Publ) Chip package with a chip embedded in a wiring body
EP2528090A1 (de) * 2011-05-19 2012-11-28 ACST Advanced Compound Semiconductor Technologies GmbH Halbleiter-Bauelement und Verfahren zu dessen Herstellung
JP5753446B2 (ja) * 2011-06-17 2015-07-22 株式会社東芝 半導体発光装置の製造方法
CN102683315B (zh) * 2011-11-30 2015-04-29 江苏长电科技股份有限公司 滚镀四面无引脚封装结构及其制造方法
KR101358637B1 (ko) * 2012-04-06 2014-02-06 에스티에스반도체통신 주식회사 두께를 얇게 할 수 있는 반도체 패키지 제조방법
CN103400771B (zh) * 2013-08-06 2016-06-29 江阴芯智联电子科技有限公司 先蚀后封芯片倒装三维系统级金属线路板结构及工艺方法
CN103413766B (zh) * 2013-08-06 2016-08-10 江阴芯智联电子科技有限公司 先蚀后封芯片正装三维系统级金属线路板结构及工艺方法
CN103456645B (zh) * 2013-08-06 2016-06-01 江阴芯智联电子科技有限公司 先蚀后封三维系统级芯片正装堆叠封装结构及工艺方法
JP2015118976A (ja) * 2013-12-17 2015-06-25 株式会社ディスコ デバイスウェーハの加工方法
JP2015119085A (ja) 2013-12-19 2015-06-25 株式会社ディスコ デバイスウェーハの加工方法
JP6307022B2 (ja) 2014-03-05 2018-04-04 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記録媒体
EP3760148B1 (en) 2015-05-13 2023-11-29 Nxthera, Inc. System for treating the bladder with condensable vapor
CN120015740A (zh) * 2017-04-04 2025-05-16 三菱电机株式会社 半导体装置
JP2019110278A (ja) * 2017-12-20 2019-07-04 株式会社デンソー 半導体装置
JP2019161105A (ja) * 2018-03-15 2019-09-19 東芝メモリ株式会社 半導体装置
US11189501B1 (en) * 2021-03-23 2021-11-30 Chung W. Ho Chip package structure and manufacturing method thereof

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US5241133A (en) * 1990-12-21 1993-08-31 Motorola, Inc. Leadless pad array chip carrier
US5508556A (en) * 1994-09-02 1996-04-16 Motorola, Inc. Leaded semiconductor device having accessible power supply pad terminals
US6127196A (en) * 1995-09-29 2000-10-03 Intel Corporation Method for testing a tape carrier package
EP1691411B1 (en) * 1996-05-27 2011-10-26 Dai Nippon Printing Co., Ltd. Process for producing a circuit member
JPH10303352A (ja) * 1997-04-22 1998-11-13 Toshiba Corp 半導体装置および半導体装置の製造方法
JP3169919B2 (ja) * 1998-12-21 2001-05-28 九州日本電気株式会社 ボールグリッドアレイ型半導体装置及びその製造方法
JP3744771B2 (ja) * 2000-05-10 2006-02-15 三洋電機株式会社 半導体装置の製造方法
JP2001326295A (ja) * 2000-05-15 2001-11-22 Rohm Co Ltd 半導体装置および半導体装置製造用フレーム
JP3561683B2 (ja) * 2000-09-04 2004-09-02 三洋電機株式会社 回路装置の製造方法
JP2002118222A (ja) * 2000-10-10 2002-04-19 Rohm Co Ltd 半導体装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303314A (ja) * 2005-04-22 2006-11-02 Koa Corp 位置補正用チップ部品およびその製造方法
JP2007115774A (ja) * 2005-10-18 2007-05-10 Nec Electronics Corp 半導体装置の製造方法
KR100753795B1 (ko) 2006-06-27 2007-08-31 하나 마이크론(주) 반도체 패키지 및 그 제조 방법
JP2008251912A (ja) * 2007-03-30 2008-10-16 Nec Corp 半導体装置及びその製造方法
US8916976B2 (en) 2007-03-30 2014-12-23 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
JP2008263234A (ja) * 2008-07-17 2008-10-30 Hitachi Chem Co Ltd 半導体チップ搭載基板及び半導体パッケージ、並びにそれらの製造方法
JP2010288448A (ja) * 2009-06-09 2010-12-24 Semikron Elektronik Gmbh & Co Kg 冷却装置を備えて成る電流コンバータ装置構造を製造する方法と電流コンバータ装置構造
JP2012244160A (ja) * 2011-05-20 2012-12-10 Kyokutoku Kagi Kofun Yugenkoshi パッケージ構造およびその製造方法
JP2013254927A (ja) * 2012-06-07 2013-12-19 Kyokutoku Kagi Kofun Yugenkoshi パッケージキャリアボード及びその製造方法

Also Published As

Publication number Publication date
TWI256715B (en) 2006-06-11
US20060079027A1 (en) 2006-04-13
KR20050007394A (ko) 2005-01-17
WO2003098687A1 (en) 2003-11-27
TW200408096A (en) 2004-05-16

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