JP2003288983A - 発光装置およびその作製方法、及び製造装置 - Google Patents
発光装置およびその作製方法、及び製造装置Info
- Publication number
- JP2003288983A JP2003288983A JP2003016273A JP2003016273A JP2003288983A JP 2003288983 A JP2003288983 A JP 2003288983A JP 2003016273 A JP2003016273 A JP 2003016273A JP 2003016273 A JP2003016273 A JP 2003016273A JP 2003288983 A JP2003288983 A JP 2003288983A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- organic compound
- compound layer
- film
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 108
- 238000004519 manufacturing process Methods 0.000 title claims description 62
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 196
- 239000001257 hydrogen Substances 0.000 claims abstract description 193
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 175
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 164
- 230000001681 protective effect Effects 0.000 claims abstract description 62
- 230000007547 defect Effects 0.000 claims abstract description 44
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 31
- 239000003086 colorant Substances 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 473
- 239000000758 substrate Substances 0.000 claims description 111
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 61
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 61
- 239000012298 atmosphere Substances 0.000 claims description 40
- 230000015572 biosynthetic process Effects 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 30
- 239000012212 insulator Substances 0.000 claims description 28
- 238000007740 vapor deposition Methods 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 12
- 238000004528 spin coating Methods 0.000 claims description 10
- 238000011068 loading method Methods 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 36
- 239000007789 gas Substances 0.000 description 36
- 239000000463 material Substances 0.000 description 36
- 239000010703 silicon Substances 0.000 description 36
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- 238000004544 sputter deposition Methods 0.000 description 29
- 239000004065 semiconductor Substances 0.000 description 27
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 22
- 229910052760 oxygen Inorganic materials 0.000 description 19
- 239000000956 alloy Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 17
- 239000001301 oxygen Substances 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- 229910045601 alloy Inorganic materials 0.000 description 16
- 230000006870 function Effects 0.000 description 15
- 229910052757 nitrogen Inorganic materials 0.000 description 15
- 239000003566 sealing material Substances 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 239000013078 crystal Substances 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 12
- 229910052718 tin Inorganic materials 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
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- 150000002500 ions Chemical class 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
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- 230000007246 mechanism Effects 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 238000009832 plasma treatment Methods 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000011810 insulating material Substances 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
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- 230000005525 hole transport Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
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- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- 229910017911 MgIn Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910017073 AlLi Inorganic materials 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000005281 excited state Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- -1 MgAg Inorganic materials 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
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- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 101100321669 Fagopyrum esculentum FA02 gene Proteins 0.000 description 1
- 241000283986 Lepus Species 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
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- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
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- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
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- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- AIYYMMQIMJOTBM-UHFFFAOYSA-L nickel(ii) acetate Chemical compound [Ni+2].CC([O-])=O.CC([O-])=O AIYYMMQIMJOTBM-UHFFFAOYSA-L 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
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- 239000000565 sealant Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003016273A JP2003288983A (ja) | 2002-01-24 | 2003-01-24 | 発光装置およびその作製方法、及び製造装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002016244 | 2002-01-24 | ||
| JP2002-16244 | 2002-01-24 | ||
| JP2003016273A JP2003288983A (ja) | 2002-01-24 | 2003-01-24 | 発光装置およびその作製方法、及び製造装置 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006014649A Division JP4408114B2 (ja) | 2002-01-24 | 2006-01-24 | 発光装置の作製方法 |
| JP2010030972A Division JP2010109394A (ja) | 2002-01-24 | 2010-02-16 | 発光装置及びその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003288983A true JP2003288983A (ja) | 2003-10-10 |
| JP2003288983A5 JP2003288983A5 (enrdf_load_stackoverflow) | 2006-03-09 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003016273A Withdrawn JP2003288983A (ja) | 2002-01-24 | 2003-01-24 | 発光装置およびその作製方法、及び製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003288983A (enrdf_load_stackoverflow) |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004207217A (ja) * | 2002-12-11 | 2004-07-22 | Sony Corp | 表示装置及び表示装置の製造方法 |
| WO2005069696A1 (ja) * | 2004-01-19 | 2005-07-28 | Pioneer Corporation | 保護膜および有機ｅｌ素子 |
| WO2005101107A1 (ja) * | 2004-03-31 | 2005-10-27 | Nec Corporation | 液晶パネルおよびその製造方法及び液晶パネルを搭載した電子機器 |
| JP2006093078A (ja) * | 2004-09-21 | 2006-04-06 | Samsung Sdi Co Ltd | 有機エレクトロルミネッセンス素子及びその製造方法 |
| JP2006332019A (ja) * | 2005-04-28 | 2006-12-07 | Seiko Epson Corp | 有機エレクトロルミネッセンス装置、及び有機エレクトロルミネッセンス装置の製造方法 |
| JP2007234431A (ja) * | 2006-03-01 | 2007-09-13 | Seiko Epson Corp | 有機発光装置、有機発光装置の製造方法および電子機器 |
| JP2008015293A (ja) * | 2006-07-07 | 2008-01-24 | Hitachi Displays Ltd | 有機ｅｌ表示装置 |
| JP2009070737A (ja) * | 2007-09-14 | 2009-04-02 | Casio Comput Co Ltd | 表示装置の製造方法 |
| JP2009076232A (ja) * | 2007-09-19 | 2009-04-09 | Fujifilm Corp | 環境感受性デバイス、環境感受性素子の封止方法 |
| US7573070B2 (en) | 2004-09-23 | 2009-08-11 | Samsung Mobile Display Co., Ltd. | Organic light emitting display and method of fabricating the same |
| US7638939B2 (en) | 2006-01-13 | 2009-12-29 | Seiko Epson Corporation | Light-emitting device and electronic apparatus |
| US7839081B2 (en) | 2006-01-11 | 2010-11-23 | Seiko Epson Corporation | Emissive device and electronic apparatus having light transmitting portions of light shielding layer being smaller than partition opening |
| WO2012168978A1 (ja) * | 2011-06-09 | 2012-12-13 | パナソニック株式会社 | 有機発光パネルおよびその製造方法 |
| JP2013048115A (ja) * | 2012-12-03 | 2013-03-07 | Sony Corp | 表示装置、表示装置の製造方法、および電子機器 |
| KR20140006907A (ko) * | 2011-02-24 | 2014-01-16 | 도쿄엘렉트론가부시키가이샤 | 실리콘 질화막의 성막 방법, 유기 전자 디바이스의 제조 방법 및 실리콘 질화막의 성막 장치 |
| JP2014022374A (ja) * | 2012-07-16 | 2014-02-03 | Samsung Display Co Ltd | 平板表示装置及びその製造方法 |
| JP2016085990A (ja) * | 2004-03-16 | 2016-05-19 | 株式会社半導体エネルギー研究所 | 発光装置 |
| JP2016213200A (ja) * | 2004-10-01 | 2016-12-15 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US11450694B2 (en) | 2018-08-21 | 2022-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Display apparatus and electronic device |
| JP2023071740A (ja) * | 2014-12-26 | 2023-05-23 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US11672152B2 (en) | 2017-11-30 | 2023-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, and display device, display module, and electronic device including display panel |
| JP2023098630A (ja) * | 2021-12-28 | 2023-07-10 | エルジー ディスプレイ カンパニー リミテッド | 表示装置 |
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| JPH05108014A (ja) * | 1991-10-16 | 1993-04-30 | Fuji Electric Co Ltd | Ｅｌ表示パネルのカラー表示用発光膜の成膜方法 |
| WO1998059528A1 (en) * | 1997-06-23 | 1998-12-30 | Fed Corporation | Emissive display using organic light emitting diodes |
| JPH1167454A (ja) * | 1997-08-27 | 1999-03-09 | Futaba Corp | マルチカラー有機エレクトロルミネッセンス素子及びその製造方法 |
| JPH11214157A (ja) * | 1998-01-22 | 1999-08-06 | Nec Corp | 多色発光有機ｅｌパネルおよびその製造方法 |
| JP2000091082A (ja) * | 1998-09-09 | 2000-03-31 | Sony Corp | 有機ｅｌディスプレイ |
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