WO2005069696A1 - 保護膜および有機el素子 - Google Patents
保護膜および有機el素子 Download PDFInfo
- Publication number
- WO2005069696A1 WO2005069696A1 PCT/JP2005/000349 JP2005000349W WO2005069696A1 WO 2005069696 A1 WO2005069696 A1 WO 2005069696A1 JP 2005000349 W JP2005000349 W JP 2005000349W WO 2005069696 A1 WO2005069696 A1 WO 2005069696A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- protective film
- organic
- film
- hydrogen content
- electroluminescent device
- Prior art date
Links
- 230000001681 protective effect Effects 0.000 title claims abstract description 47
- 239000010408 film Substances 0.000 claims abstract description 79
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000001257 hydrogen Substances 0.000 claims abstract description 34
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 12
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 17
- 238000005516 engineering process Methods 0.000 description 10
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000012044 organic layer Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000001678 elastic recoil detection analysis Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 206010027146 Melanoderma Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
Definitions
- the present technology relates to, for example, a protective film for a device such as an organic electroluminescent device (hereinafter, referred to as an “organic EL device”), and a device having such a protective film formed thereon. is there.
- a protective film for a device such as an organic electroluminescent device (hereinafter, referred to as an “organic EL device”)
- an organic EL device a device having such a protective film formed thereon.
- Organic EL elements have attracted attention in recent years because they can be driven at a relatively low voltage, have high luminance, do not require a backlight, and can be manufactured in a light weight flat panel display.
- the organic EL element has, for example, a configuration in which an organic layer is sandwiched between opposed first and second electrodes formed on a substrate.
- the organic EL element absorbs moisture and oxygen in the air, for example, causing black spot-like dark spots in the light-emitting element, and the generated dark spots grow. Therefore, there is a problem that the life of the organic EL element is shortened.
- an organic EL element is sealed with a surrounding body called a sealing can containing a desiccant.
- a sealing can When such a sealed can is formed while applying force, the thickness of the display panel becomes large. For this reason, attempts have been made to seal the organic EL element with a thin film.
- a sealing film having a hydrogen content of 30% or less is disclosed.
- Patent Document 2 discloses a SixNyOz: H film formed by a plasma CVD method as an insulating layer formed on the light-emitting layer of an inorganic EL element, which has a hydrogen content of 2 ⁇ 10 22 It has been proposed to form at omsZcm 2 or less. It is stated that this is because if there is a large amount of hydrogen in the film, hydrogen bubbles are generated when the device is driven.
- Patent document 1 Japanese Patent Application Laid-Open No. 2001-68264
- Patent Document 2 Japanese Unexamined Patent Publication No. Hei 2-189891 Disclosure of the invention
- the plasma CVD method can form a film at a lower temperature compared to, for example, a sputtering method, a thermal CVD method, a catalytic CVD method, and the like, and has excellent device step coverage.
- the amount of hydrogen contained in the film obtained by comparison with these methods is large.
- organic EL materials generally have low heat resistance, and there is a possibility that the organic EL material may be deactivated depending on the temperature at which the protective film having a low hydrogen content as described above is formed. It was accompanied by sex.
- a technique for solving the above-mentioned problem is a protective film for a thin-film element formed on a substrate, wherein the protective film has a hydrogen content of 30 at% or more.
- the protective film is SiN, SiO, SiON, SiC or SiCN-based or diamond-like carbon (DLC).
- a technique for solving the above-mentioned problem is also provided in an organic electroluminescent device having at least a first electrode, an organic light emitting layer, and a second electrode formed on a substrate.
- the present invention provides an organic electroluminescent device having a protective film having a hydrogen content of 30 at% or more.
- the organic electroluminescent device wherein the protective film is made of SiN, SiO, SiON, SiC or SiCN or diamond-like carbon (DLC). It is.
- a technique for solving the above-mentioned problem is provided in a method for manufacturing an organic electroluminescent device having at least a first electrode, an organic light emitting layer, and a second electrode formed on a substrate.
- This is a method for manufacturing an organic electroluminescent device, comprising forming a protective film having a hydrogen content of 30 at% or more on the device by a CVD method or a sputtering method.
- FIG. 1 is a schematic cross-sectional view showing an example of an organic EL device to which a protective film according to the present technology is applied.
- reference numeral 10 denotes a substrate
- 11 denotes a first electrode
- 12 denotes a hole injection / transport layer
- 13 denotes an organic light emitting layer
- 14 denotes a second electrode
- 15 denotes a protective film.
- the first technology disclosed is a protective film for a thin-film element formed on a substrate, wherein the protective film has a hydrogen content of 30 at% or more.
- the hydrogen content of this protective film is preferably 30 to 40 at%.
- the ⁇ hydrogen content '' shown in the present specification was measured by Rutherford Backscattering Analysis (RBS) -Hydrogen Forward Scattering Analysis (HFS) measurement, excluding the oxidized area of the outermost surface of the sample. It is a value in the region up to a depth of about 500 nm. Also, since hydrogen is desorbed during the measurement, it is the amount of hydrogen before the measurement, which is estimated as the time-varying power of the spectrum. The reason for setting the region up to a depth of about 500 nm is that only the composition distribution at a depth from the outermost surface to about 500 nm can be measured in the RBS-HFS measurement.
- the protective film has a bad effect on the element functional layer and the electrode layer due to a gas or the like generated from the film, or a point force having a barrier property of blocking moisture that intrudes external force. It was considered that the smaller the amount of hydrogen contained in the film, the better.
- a thick film having a small film stress of the protective film for example, 0.5 ⁇ m or more, preferably 115 m can be formed.
- the lower element structure to be covered has a force step, the lower element structure can be covered with good followability. It is also possible to embed particles and pinholes. Therefore, for example, a single film can exhibit a sufficient function without combining the protective film with another film, for example, a metal film.
- the composition of the protective film according to the present technology may be any of an inorganic film and an organic film which are not particularly limited except for the above hydrogen content.
- SiN-based, SiO-based, and SiON-based films may be used.
- System silicon-based such as SiC-based, SiCN-based, and a composition containing at least one element of oxygen, carbon, and nitrogen or diamond-like carbon (DLC). U, because it can form a stable film.
- Such a protective film can be formed by, for example, various CVD methods such as a thermal CVD method, a plasma CVD method, and a catalytic CVD method, and a known method such as a sputtering method.
- various CVD methods such as a thermal CVD method, a plasma CVD method, and a catalytic CVD method, and a known method such as a sputtering method.
- the hydrogen content in the obtained film is, for example, such as SiH or the like.
- a desired one can be obtained.
- hydrogen gas or a hydrogen source such as NH is introduced into the reaction system separately from a target material such as Si or SiC to obtain a desired material.
- a film having a high hydrogen content as in the present technology can be formed under a film forming temperature condition of, for example, 120 ° C or lower, more preferably 70 to 110 ° C.
- a film forming temperature condition of, for example, 120 ° C or lower, more preferably 70 to 110 ° C.
- materials with low heat resistance such as organic EL materials Can also be coated without damage.
- FIG. 1 is a schematic cross-sectional view showing an example of an organic EL device according to a second technology to which the protective film according to the first technology is applied.
- a first electrode 11, a hole injection / transport layer 12, an organic light emitting layer 13, and a second electrode 14 are sequentially laminated on a base material 10, and an organic EL A protective film 15 having a predetermined hydrogen content as described above is formed so as to cover the entire device.
- the structure of the organic EL device according to the second technique can be any of various known structures other than those shown in the example shown in Fig. 1 above.
- the organic EL device according to the second technology has the above-described protective film having a high hydrogen composition ratio of 30% or more in hydrogen content, so that the organic light-emitting layer is sufficiently insulated from external oxygen, moisture, and the like. And an organic EL device having an excellent emission life.
- the thickness of the protective film 15 is not particularly limited, but may be, for example, 0.5 / zm or more, preferably 115 ⁇ m. desirable. Even with such a thick film, since the film stress is low, it is possible to impart high moisture-proof property or gas nolia property without causing problems such as delamination and abnormal light emission. Over a long period of time.
- the organic EL device according to the second technique as the base material other than the protective layer and the material constituting each laminated body, any known material can be used without particular limitation. Is also possible.
- An organic EL device having a structure as shown in FIG. 1 was produced.
- the protective film 15 is formed by plasma CVD using SiH and N as source gases.
- An organic EL display was fabricated using the obtained organic EL device, and luminescence experiments were performed at room temperature (22 ° C), high temperature (100 ° C) and high temperature and high humidity (60 ° C, 95% RH).
- room temperature 22 ° C
- high temperature 100 ° C
- high temperature and high humidity 60 ° C, 95% RH.
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/586,657 US20080226939A1 (en) | 2004-01-19 | 2005-01-14 | Protection Film and Organic El Device |
JP2005517068A JPWO2005069696A1 (ja) | 2004-01-19 | 2005-01-14 | 保護膜および有機el素子 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004010844 | 2004-01-19 | ||
JP2004-010844 | 2004-01-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005069696A1 true WO2005069696A1 (ja) | 2005-07-28 |
Family
ID=34792312
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/000349 WO2005069696A1 (ja) | 2004-01-19 | 2005-01-14 | 保護膜および有機el素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080226939A1 (ja) |
JP (1) | JPWO2005069696A1 (ja) |
KR (1) | KR20070003860A (ja) |
TW (1) | TW200529701A (ja) |
WO (1) | WO2005069696A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012069529A (ja) * | 2011-11-30 | 2012-04-05 | Canon Inc | 有機el素子の製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI418060B (zh) * | 2008-12-26 | 2013-12-01 | Lextar Electronics Corp | 發光二極體晶片的製造方法 |
US10316408B2 (en) * | 2014-12-12 | 2019-06-11 | Silcotek Corp. | Delivery device, manufacturing system and process of manufacturing |
JP6345104B2 (ja) * | 2014-12-24 | 2018-06-20 | 東京エレクトロン株式会社 | 成膜方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1126155A (ja) * | 1997-06-30 | 1999-01-29 | Mitsui Chem Inc | エレクトロルミネッセンス素子用保護フィルム |
JP2000223265A (ja) * | 1999-02-02 | 2000-08-11 | Toray Ind Inc | 発光素子 |
JP2001118675A (ja) * | 1999-10-21 | 2001-04-27 | Tdk Corp | 有機el素子 |
JP2002184578A (ja) * | 2000-12-18 | 2002-06-28 | Fuji Electric Co Ltd | 色変換フィルタ基板、該色変換フィルタ基板を具備する色変換カラーディスプレイ、およびそれらの製造方法 |
JP2003288983A (ja) * | 2002-01-24 | 2003-10-10 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法、及び製造装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7190335B2 (en) * | 2002-03-26 | 2007-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
-
2005
- 2005-01-14 KR KR1020067016457A patent/KR20070003860A/ko not_active Application Discontinuation
- 2005-01-14 US US10/586,657 patent/US20080226939A1/en not_active Abandoned
- 2005-01-14 JP JP2005517068A patent/JPWO2005069696A1/ja active Pending
- 2005-01-14 WO PCT/JP2005/000349 patent/WO2005069696A1/ja active Application Filing
- 2005-01-19 TW TW094101492A patent/TW200529701A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1126155A (ja) * | 1997-06-30 | 1999-01-29 | Mitsui Chem Inc | エレクトロルミネッセンス素子用保護フィルム |
JP2000223265A (ja) * | 1999-02-02 | 2000-08-11 | Toray Ind Inc | 発光素子 |
JP2001118675A (ja) * | 1999-10-21 | 2001-04-27 | Tdk Corp | 有機el素子 |
JP2002184578A (ja) * | 2000-12-18 | 2002-06-28 | Fuji Electric Co Ltd | 色変換フィルタ基板、該色変換フィルタ基板を具備する色変換カラーディスプレイ、およびそれらの製造方法 |
JP2003288983A (ja) * | 2002-01-24 | 2003-10-10 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法、及び製造装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012069529A (ja) * | 2011-11-30 | 2012-04-05 | Canon Inc | 有機el素子の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2005069696A1 (ja) | 2007-12-27 |
KR20070003860A (ko) | 2007-01-05 |
TW200529701A (en) | 2005-09-01 |
US20080226939A1 (en) | 2008-09-18 |
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