JP2003273322A5 - - Google Patents
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- Publication number
- JP2003273322A5 JP2003273322A5 JP2003050559A JP2003050559A JP2003273322A5 JP 2003273322 A5 JP2003273322 A5 JP 2003273322A5 JP 2003050559 A JP2003050559 A JP 2003050559A JP 2003050559 A JP2003050559 A JP 2003050559A JP 2003273322 A5 JP2003273322 A5 JP 2003273322A5
- Authority
- JP
- Japan
- Prior art keywords
- flexible
- memory device
- organic
- conductive layer
- diode structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000011368 organic material Substances 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 4
- 229910010272 inorganic material Inorganic materials 0.000 claims 4
- 239000011147 inorganic material Substances 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
- 238000002955 isolation Methods 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- 238000000926 separation method Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229930182556 Polyacetal Natural products 0.000 claims 1
- 229920000265 Polyparaphenylene Polymers 0.000 claims 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- 150000003927 aminopyridines Chemical class 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 239000002178 crystalline material Substances 0.000 claims 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims 1
- 229920000052 poly(p-xylylene) Polymers 0.000 claims 1
- 229920000767 polyaniline Polymers 0.000 claims 1
- 229920006324 polyoxymethylene Polymers 0.000 claims 1
- -1 polyparaphenylene Polymers 0.000 claims 1
- 229920000128 polypyrrole Polymers 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/086606 | 2002-03-01 | ||
| US10/086,606 US6683322B2 (en) | 2002-03-01 | 2002-03-01 | Flexible hybrid memory element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003273322A JP2003273322A (ja) | 2003-09-26 |
| JP2003273322A5 true JP2003273322A5 (enExample) | 2005-06-30 |
Family
ID=27733416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003050559A Withdrawn JP2003273322A (ja) | 2002-03-01 | 2003-02-27 | フレキシブルハイブリッドメモリエレメント |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6683322B2 (enExample) |
| EP (1) | EP1341186B1 (enExample) |
| JP (1) | JP2003273322A (enExample) |
| KR (1) | KR20040005571A (enExample) |
| CN (1) | CN1442906A (enExample) |
| DE (1) | DE60301508T2 (enExample) |
| TW (1) | TW200304218A (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004047791A (ja) * | 2002-07-12 | 2004-02-12 | Pioneer Electronic Corp | 有機薄膜スイッチングメモリ素子及びメモリ装置 |
| WO2005053002A2 (en) * | 2003-11-25 | 2005-06-09 | Princeton University | Two-component, rectifying-junction memory element |
| KR100688498B1 (ko) * | 2004-07-01 | 2007-03-02 | 삼성전자주식회사 | 게이트 드라이버가 내장된 액정 패널 및 이의 구동 방법 |
| US7220982B2 (en) * | 2004-07-27 | 2007-05-22 | Micron Technology, Inc. | Amorphous carbon-based non-volatile memory |
| US7288784B2 (en) * | 2004-08-19 | 2007-10-30 | Micron Technology, Inc. | Structure for amorphous carbon based non-volatile memory |
| KR20140015128A (ko) * | 2004-10-18 | 2014-02-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US7781758B2 (en) * | 2004-10-22 | 2010-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US7795617B2 (en) * | 2004-10-29 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, IC card, IC tag, RFID, transponder, paper money, valuable securities, passport, electronic device, bag, and clothes |
| CN100576557C (zh) * | 2004-11-26 | 2009-12-30 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| US8097400B2 (en) * | 2005-02-22 | 2012-01-17 | Hewlett-Packard Development Company, L.P. | Method for forming an electronic device |
| US7926726B2 (en) | 2005-03-28 | 2011-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Survey method and survey system |
| JP4712592B2 (ja) * | 2005-03-31 | 2011-06-29 | 株式会社半導体エネルギー研究所 | 記憶素子、半導体装置およびその駆動方法 |
| US7358590B2 (en) | 2005-03-31 | 2008-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| US7700984B2 (en) * | 2005-05-20 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device including memory cell |
| US7868320B2 (en) | 2005-05-31 | 2011-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US7719872B2 (en) * | 2005-12-28 | 2010-05-18 | Semiconductor Energy Laboratory Co., Ltd. | Write-once nonvolatile memory with redundancy capability |
| TWI281760B (en) * | 2005-12-30 | 2007-05-21 | Ind Tech Res Inst | Organic tri-stable device and method for manufacturing and operating the same |
| EP1850378A3 (en) * | 2006-04-28 | 2013-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semicondutor device |
| US8030637B2 (en) * | 2006-08-25 | 2011-10-04 | Qimonda Ag | Memory element using reversible switching between SP2 and SP3 hybridized carbon |
| US7915603B2 (en) * | 2006-10-27 | 2011-03-29 | Qimonda Ag | Modifiable gate stack memory element |
| US20080102278A1 (en) * | 2006-10-27 | 2008-05-01 | Franz Kreupl | Carbon filament memory and method for fabrication |
| US7933133B2 (en) * | 2007-11-05 | 2011-04-26 | Contour Semiconductor, Inc. | Low cost, high-density rectifier matrix memory |
| US20090201722A1 (en) * | 2008-02-12 | 2009-08-13 | Kamesh Giridhar | Method including magnetic domain patterning using plasma ion implantation for mram fabrication |
| US8535766B2 (en) | 2008-10-22 | 2013-09-17 | Applied Materials, Inc. | Patterning of magnetic thin film using energized ions |
| KR20140069342A (ko) | 2008-05-16 | 2014-06-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광소자 및 전자기기 |
| US8895950B2 (en) * | 2009-10-23 | 2014-11-25 | Nantero Inc. | Methods for passivating a carbonic nanolayer |
| US20110156012A1 (en) * | 2009-11-12 | 2011-06-30 | Sony Corporation | Double layer hardmask for organic devices |
| US8877531B2 (en) | 2010-09-27 | 2014-11-04 | Applied Materials, Inc. | Electronic apparatus |
| JP5380481B2 (ja) * | 2011-03-07 | 2014-01-08 | 株式会社東芝 | 記憶装置およびその製造方法 |
| JP5722180B2 (ja) * | 2011-09-26 | 2015-05-20 | 株式会社日立製作所 | 不揮発性記憶装置 |
| KR20140071813A (ko) | 2012-12-04 | 2014-06-12 | 삼성전자주식회사 | 파이버 상에 형성된 저항성 메모리 소자 및 그 제종 방법 |
| US10355206B2 (en) | 2017-02-06 | 2019-07-16 | Nantero, Inc. | Sealed resistive change elements |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4089734A (en) | 1974-09-16 | 1978-05-16 | Raytheon Company | Integrated circuit fusing technique |
| US4677742A (en) | 1983-01-18 | 1987-07-07 | Energy Conversion Devices, Inc. | Electronic matrix arrays and method for making the same |
| US5177330A (en) * | 1988-09-19 | 1993-01-05 | Futaba Denshi Kogyo K.K. | Key board switch |
| GB9122362D0 (en) | 1991-10-22 | 1991-12-04 | British Telecomm | Resistive memory element |
| WO1999039394A1 (en) | 1998-02-02 | 1999-08-05 | Uniax Corporation | X-y addressable electric microswitch arrays and sensor matrices employing them |
| US6552409B2 (en) | 2001-06-05 | 2003-04-22 | Hewlett-Packard Development Company, Lp | Techniques for addressing cross-point diode memory arrays |
-
2002
- 2002-03-01 US US10/086,606 patent/US6683322B2/en not_active Expired - Fee Related
- 2002-11-14 TW TW091133414A patent/TW200304218A/zh unknown
-
2003
- 2003-02-27 JP JP2003050559A patent/JP2003273322A/ja not_active Withdrawn
- 2003-02-28 KR KR1020030012736A patent/KR20040005571A/ko not_active Withdrawn
- 2003-02-28 EP EP03251222A patent/EP1341186B1/en not_active Expired - Lifetime
- 2003-02-28 CN CN03106743A patent/CN1442906A/zh active Pending
- 2003-02-28 DE DE60301508T patent/DE60301508T2/de not_active Expired - Fee Related
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