TW200304218A - A flexible hybrid memory element - Google Patents

A flexible hybrid memory element Download PDF

Info

Publication number
TW200304218A
TW200304218A TW091133414A TW91133414A TW200304218A TW 200304218 A TW200304218 A TW 200304218A TW 091133414 A TW091133414 A TW 091133414A TW 91133414 A TW91133414 A TW 91133414A TW 200304218 A TW200304218 A TW 200304218A
Authority
TW
Taiwan
Prior art keywords
flexible
layer
conductive layer
hybrid memory
memory element
Prior art date
Application number
TW091133414A
Other languages
English (en)
Chinese (zh)
Inventor
Warren B Jackson
Carl Philip Taussig
Craig Perlov
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of TW200304218A publication Critical patent/TW200304218A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
TW091133414A 2002-03-01 2002-11-14 A flexible hybrid memory element TW200304218A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/086,606 US6683322B2 (en) 2002-03-01 2002-03-01 Flexible hybrid memory element

Publications (1)

Publication Number Publication Date
TW200304218A true TW200304218A (en) 2003-09-16

Family

ID=27733416

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091133414A TW200304218A (en) 2002-03-01 2002-11-14 A flexible hybrid memory element

Country Status (7)

Country Link
US (1) US6683322B2 (enExample)
EP (1) EP1341186B1 (enExample)
JP (1) JP2003273322A (enExample)
KR (1) KR20040005571A (enExample)
CN (1) CN1442906A (enExample)
DE (1) DE60301508T2 (enExample)
TW (1) TW200304218A (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004047791A (ja) * 2002-07-12 2004-02-12 Pioneer Electronic Corp 有機薄膜スイッチングメモリ素子及びメモリ装置
WO2005053002A2 (en) * 2003-11-25 2005-06-09 Princeton University Two-component, rectifying-junction memory element
KR100688498B1 (ko) * 2004-07-01 2007-03-02 삼성전자주식회사 게이트 드라이버가 내장된 액정 패널 및 이의 구동 방법
US7220982B2 (en) * 2004-07-27 2007-05-22 Micron Technology, Inc. Amorphous carbon-based non-volatile memory
US7288784B2 (en) * 2004-08-19 2007-10-30 Micron Technology, Inc. Structure for amorphous carbon based non-volatile memory
KR20140015128A (ko) * 2004-10-18 2014-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US7781758B2 (en) * 2004-10-22 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7795617B2 (en) * 2004-10-29 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, IC card, IC tag, RFID, transponder, paper money, valuable securities, passport, electronic device, bag, and clothes
CN100576557C (zh) * 2004-11-26 2009-12-30 株式会社半导体能源研究所 半导体器件及其制造方法
US8097400B2 (en) * 2005-02-22 2012-01-17 Hewlett-Packard Development Company, L.P. Method for forming an electronic device
US7926726B2 (en) 2005-03-28 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Survey method and survey system
JP4712592B2 (ja) * 2005-03-31 2011-06-29 株式会社半導体エネルギー研究所 記憶素子、半導体装置およびその駆動方法
US7358590B2 (en) 2005-03-31 2008-04-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US7700984B2 (en) * 2005-05-20 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Semiconductor device including memory cell
US7868320B2 (en) 2005-05-31 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7719872B2 (en) * 2005-12-28 2010-05-18 Semiconductor Energy Laboratory Co., Ltd. Write-once nonvolatile memory with redundancy capability
TWI281760B (en) * 2005-12-30 2007-05-21 Ind Tech Res Inst Organic tri-stable device and method for manufacturing and operating the same
EP1850378A3 (en) * 2006-04-28 2013-08-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semicondutor device
US8030637B2 (en) * 2006-08-25 2011-10-04 Qimonda Ag Memory element using reversible switching between SP2 and SP3 hybridized carbon
US7915603B2 (en) * 2006-10-27 2011-03-29 Qimonda Ag Modifiable gate stack memory element
US20080102278A1 (en) * 2006-10-27 2008-05-01 Franz Kreupl Carbon filament memory and method for fabrication
US7933133B2 (en) * 2007-11-05 2011-04-26 Contour Semiconductor, Inc. Low cost, high-density rectifier matrix memory
US20090201722A1 (en) * 2008-02-12 2009-08-13 Kamesh Giridhar Method including magnetic domain patterning using plasma ion implantation for mram fabrication
US8535766B2 (en) 2008-10-22 2013-09-17 Applied Materials, Inc. Patterning of magnetic thin film using energized ions
KR20140069342A (ko) 2008-05-16 2014-06-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광소자 및 전자기기
US8895950B2 (en) * 2009-10-23 2014-11-25 Nantero Inc. Methods for passivating a carbonic nanolayer
US20110156012A1 (en) * 2009-11-12 2011-06-30 Sony Corporation Double layer hardmask for organic devices
US8877531B2 (en) 2010-09-27 2014-11-04 Applied Materials, Inc. Electronic apparatus
JP5380481B2 (ja) * 2011-03-07 2014-01-08 株式会社東芝 記憶装置およびその製造方法
JP5722180B2 (ja) * 2011-09-26 2015-05-20 株式会社日立製作所 不揮発性記憶装置
KR20140071813A (ko) 2012-12-04 2014-06-12 삼성전자주식회사 파이버 상에 형성된 저항성 메모리 소자 및 그 제종 방법
US10355206B2 (en) 2017-02-06 2019-07-16 Nantero, Inc. Sealed resistive change elements

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4089734A (en) 1974-09-16 1978-05-16 Raytheon Company Integrated circuit fusing technique
US4677742A (en) 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
US5177330A (en) * 1988-09-19 1993-01-05 Futaba Denshi Kogyo K.K. Key board switch
GB9122362D0 (en) 1991-10-22 1991-12-04 British Telecomm Resistive memory element
WO1999039394A1 (en) 1998-02-02 1999-08-05 Uniax Corporation X-y addressable electric microswitch arrays and sensor matrices employing them
US6552409B2 (en) 2001-06-05 2003-04-22 Hewlett-Packard Development Company, Lp Techniques for addressing cross-point diode memory arrays

Also Published As

Publication number Publication date
JP2003273322A (ja) 2003-09-26
EP1341186B1 (en) 2005-09-07
DE60301508D1 (de) 2005-10-13
US20030176034A1 (en) 2003-09-18
KR20040005571A (ko) 2004-01-16
DE60301508T2 (de) 2006-06-29
EP1341186A1 (en) 2003-09-03
CN1442906A (zh) 2003-09-17
US6683322B2 (en) 2004-01-27

Similar Documents

Publication Publication Date Title
TW200304218A (en) A flexible hybrid memory element
US10224370B2 (en) Device switching using layered device structure
US7561463B2 (en) Thin film phase-change memory
US6147395A (en) Method for fabricating a small area of contact between electrodes
US5272370A (en) Thin-film ROM devices and their manufacture
TW546751B (en) Apparatus and fabrication process to reduce crosstalk in PIRM memory array
KR101375124B1 (ko) 그래핀 투명 전극 및 이를 포함하는 플렉시블 실리콘 박막 반도체 소자
US20020050625A1 (en) Junctionless antifuses and systems containing junctionless antifuses
US20060028895A1 (en) Silver island anti-fuse
WO2009134324A1 (en) Reduction of leakage current in a vertical diode
US12396378B2 (en) Memristor having metal/ion channels formed in insulating layer and resistive switching memory device including the same
CN100539156C (zh) 存储装置以及其制造方法
US6297080B1 (en) Method of crystallizing a silicon film and a method of manufacturing a liquid crystal display apparatus
US10915024B2 (en) Method for manufacturing pattern for electronic devices, and fiber-type electronic device comprising the pattern for electronic devices
Liu et al. Graphene oxide/Al2O3-based diffusive memristor cells: enabling robust crossbar arrays for multidisciplinary applications
CN103730571B (zh) 在电阻式随机存取存储器单元中形成接触以降低单元编程所需电压的方法和装置
US20070292985A1 (en) Phase change memory with nanofiber heater
CN210607332U (zh) 一种电极结构复用的阻变存储器
CN109994605B (zh) 一种电极结构复用的阻变存储器及其制备方法
US12402547B1 (en) Flexible memory systems and related methods
US20230422517A1 (en) Thermally enhanced selector structure and methods of forming the same
KR100865257B1 (ko) 액정표시장치용 박막트랜지스터의 제조방법
KR20110075897A (ko) 비휘발성 유기 메모리 소자 및 이의 제조방법
US20160240778A1 (en) Multi-Value Nonvolatile Organic Resistive Random Access Memory and Method for Preparing the Same
JP5272596B2 (ja) 記憶装置およびその制御方法