KR20040005571A - 플렉서블 하이브리드 메모리 소자를 포함하는 메모리 장치 - Google Patents

플렉서블 하이브리드 메모리 소자를 포함하는 메모리 장치 Download PDF

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Publication number
KR20040005571A
KR20040005571A KR1020030012736A KR20030012736A KR20040005571A KR 20040005571 A KR20040005571 A KR 20040005571A KR 1020030012736 A KR1020030012736 A KR 1020030012736A KR 20030012736 A KR20030012736 A KR 20030012736A KR 20040005571 A KR20040005571 A KR 20040005571A
Authority
KR
South Korea
Prior art keywords
flexible
layer
switch
memory device
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020030012736A
Other languages
English (en)
Korean (ko)
Inventor
잭슨와렌비
타우시그칼필립
페를로브크레이그
Original Assignee
휴렛-팩커드 컴퍼니(델라웨어주법인)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 휴렛-팩커드 컴퍼니(델라웨어주법인) filed Critical 휴렛-팩커드 컴퍼니(델라웨어주법인)
Publication of KR20040005571A publication Critical patent/KR20040005571A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
KR1020030012736A 2002-03-01 2003-02-28 플렉서블 하이브리드 메모리 소자를 포함하는 메모리 장치 Withdrawn KR20040005571A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/086,606 US6683322B2 (en) 2002-03-01 2002-03-01 Flexible hybrid memory element
US10/086,606 2002-03-01

Publications (1)

Publication Number Publication Date
KR20040005571A true KR20040005571A (ko) 2004-01-16

Family

ID=27733416

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030012736A Withdrawn KR20040005571A (ko) 2002-03-01 2003-02-28 플렉서블 하이브리드 메모리 소자를 포함하는 메모리 장치

Country Status (7)

Country Link
US (1) US6683322B2 (enExample)
EP (1) EP1341186B1 (enExample)
JP (1) JP2003273322A (enExample)
KR (1) KR20040005571A (enExample)
CN (1) CN1442906A (enExample)
DE (1) DE60301508T2 (enExample)
TW (1) TW200304218A (enExample)

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JP2004047791A (ja) * 2002-07-12 2004-02-12 Pioneer Electronic Corp 有機薄膜スイッチングメモリ素子及びメモリ装置
WO2005053002A2 (en) * 2003-11-25 2005-06-09 Princeton University Two-component, rectifying-junction memory element
KR100688498B1 (ko) * 2004-07-01 2007-03-02 삼성전자주식회사 게이트 드라이버가 내장된 액정 패널 및 이의 구동 방법
US7220982B2 (en) * 2004-07-27 2007-05-22 Micron Technology, Inc. Amorphous carbon-based non-volatile memory
US7288784B2 (en) * 2004-08-19 2007-10-30 Micron Technology, Inc. Structure for amorphous carbon based non-volatile memory
KR20140015128A (ko) * 2004-10-18 2014-02-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US7781758B2 (en) * 2004-10-22 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7795617B2 (en) * 2004-10-29 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, IC card, IC tag, RFID, transponder, paper money, valuable securities, passport, electronic device, bag, and clothes
CN100576557C (zh) * 2004-11-26 2009-12-30 株式会社半导体能源研究所 半导体器件及其制造方法
US8097400B2 (en) * 2005-02-22 2012-01-17 Hewlett-Packard Development Company, L.P. Method for forming an electronic device
US7926726B2 (en) 2005-03-28 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Survey method and survey system
JP4712592B2 (ja) * 2005-03-31 2011-06-29 株式会社半導体エネルギー研究所 記憶素子、半導体装置およびその駆動方法
US7358590B2 (en) 2005-03-31 2008-04-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US7700984B2 (en) * 2005-05-20 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Semiconductor device including memory cell
US7868320B2 (en) 2005-05-31 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7719872B2 (en) * 2005-12-28 2010-05-18 Semiconductor Energy Laboratory Co., Ltd. Write-once nonvolatile memory with redundancy capability
TWI281760B (en) * 2005-12-30 2007-05-21 Ind Tech Res Inst Organic tri-stable device and method for manufacturing and operating the same
EP1850378A3 (en) * 2006-04-28 2013-08-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semicondutor device
US8030637B2 (en) * 2006-08-25 2011-10-04 Qimonda Ag Memory element using reversible switching between SP2 and SP3 hybridized carbon
US7915603B2 (en) * 2006-10-27 2011-03-29 Qimonda Ag Modifiable gate stack memory element
US20080102278A1 (en) * 2006-10-27 2008-05-01 Franz Kreupl Carbon filament memory and method for fabrication
US7933133B2 (en) * 2007-11-05 2011-04-26 Contour Semiconductor, Inc. Low cost, high-density rectifier matrix memory
US20090201722A1 (en) * 2008-02-12 2009-08-13 Kamesh Giridhar Method including magnetic domain patterning using plasma ion implantation for mram fabrication
US8535766B2 (en) 2008-10-22 2013-09-17 Applied Materials, Inc. Patterning of magnetic thin film using energized ions
KR20140069342A (ko) 2008-05-16 2014-06-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광소자 및 전자기기
US8895950B2 (en) * 2009-10-23 2014-11-25 Nantero Inc. Methods for passivating a carbonic nanolayer
US20110156012A1 (en) * 2009-11-12 2011-06-30 Sony Corporation Double layer hardmask for organic devices
US8877531B2 (en) 2010-09-27 2014-11-04 Applied Materials, Inc. Electronic apparatus
JP5380481B2 (ja) * 2011-03-07 2014-01-08 株式会社東芝 記憶装置およびその製造方法
JP5722180B2 (ja) * 2011-09-26 2015-05-20 株式会社日立製作所 不揮発性記憶装置
KR20140071813A (ko) 2012-12-04 2014-06-12 삼성전자주식회사 파이버 상에 형성된 저항성 메모리 소자 및 그 제종 방법
US10355206B2 (en) 2017-02-06 2019-07-16 Nantero, Inc. Sealed resistive change elements

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4089734A (en) 1974-09-16 1978-05-16 Raytheon Company Integrated circuit fusing technique
US4677742A (en) 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
US5177330A (en) * 1988-09-19 1993-01-05 Futaba Denshi Kogyo K.K. Key board switch
GB9122362D0 (en) 1991-10-22 1991-12-04 British Telecomm Resistive memory element
WO1999039394A1 (en) 1998-02-02 1999-08-05 Uniax Corporation X-y addressable electric microswitch arrays and sensor matrices employing them
US6552409B2 (en) 2001-06-05 2003-04-22 Hewlett-Packard Development Company, Lp Techniques for addressing cross-point diode memory arrays

Also Published As

Publication number Publication date
JP2003273322A (ja) 2003-09-26
TW200304218A (en) 2003-09-16
EP1341186B1 (en) 2005-09-07
DE60301508D1 (de) 2005-10-13
US20030176034A1 (en) 2003-09-18
DE60301508T2 (de) 2006-06-29
EP1341186A1 (en) 2003-09-03
CN1442906A (zh) 2003-09-17
US6683322B2 (en) 2004-01-27

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20030228

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid