JP2003272374A5 - - Google Patents
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- Publication number
- JP2003272374A5 JP2003272374A5 JP2003058137A JP2003058137A JP2003272374A5 JP 2003272374 A5 JP2003272374 A5 JP 2003272374A5 JP 2003058137 A JP2003058137 A JP 2003058137A JP 2003058137 A JP2003058137 A JP 2003058137A JP 2003272374 A5 JP2003272374 A5 JP 2003272374A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetization
- storage device
- magnetic field
- reference layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 claims 38
- 230000005415 magnetization Effects 0.000 claims 26
- 239000000696 magnetic material Substances 0.000 claims 12
- 125000006850 spacer group Chemical group 0.000 claims 11
- 230000005293 ferrimagnetic effect Effects 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 230000008878 coupling Effects 0.000 claims 3
- 238000010168 coupling process Methods 0.000 claims 3
- 238000005859 coupling reaction Methods 0.000 claims 3
- 239000002902 ferrimagnetic material Substances 0.000 claims 2
- 230000005294 ferromagnetic effect Effects 0.000 claims 2
- 210000000352 storage cell Anatomy 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/093,344 US6625059B1 (en) | 2002-03-06 | 2002-03-06 | Synthetic ferrimagnet reference layer for a magnetic storage device |
| US10/093344 | 2002-03-06 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003272374A JP2003272374A (ja) | 2003-09-26 |
| JP2003272374A5 true JP2003272374A5 (enExample) | 2005-04-21 |
| JP4477829B2 JP4477829B2 (ja) | 2010-06-09 |
Family
ID=27754047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003058137A Expired - Lifetime JP4477829B2 (ja) | 2002-03-06 | 2003-03-05 | 磁気記憶デバイスを動作させる方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6625059B1 (enExample) |
| EP (1) | EP1343170A3 (enExample) |
| JP (1) | JP4477829B2 (enExample) |
| KR (1) | KR100978641B1 (enExample) |
| CN (1) | CN100419902C (enExample) |
| TW (1) | TW200304143A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6967350B2 (en) * | 2002-04-02 | 2005-11-22 | Hewlett-Packard Development Company, L.P. | Memory structures |
| US7167391B2 (en) * | 2004-02-11 | 2007-01-23 | Hewlett-Packard Development Company, L.P. | Multilayer pinned reference layer for a magnetic storage device |
| US7102920B2 (en) * | 2004-03-23 | 2006-09-05 | Hewlett-Packard Development Company, L.P. | Soft-reference three conductor magnetic memory storage device |
| US7622784B2 (en) * | 2005-01-10 | 2009-11-24 | International Business Machines Corporation | MRAM device with improved stack structure and offset field for low-power toggle mode writing |
| US20090257168A1 (en) * | 2008-04-11 | 2009-10-15 | Northern Lights Semiconductor Corp. | Apparatus for Storing Electrical Energy |
| KR101598833B1 (ko) * | 2009-12-21 | 2016-03-03 | 삼성전자주식회사 | 자기 메모리 소자 및 그 동작방법 |
| US8890266B2 (en) | 2011-01-31 | 2014-11-18 | Everspin Technologies, Inc. | Fabrication process and layout for magnetic sensor arrays |
| US9583696B2 (en) | 2014-03-12 | 2017-02-28 | Qualcomm Incorporated | Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction |
| US9666215B2 (en) | 2015-10-28 | 2017-05-30 | International Business Machines Corporation | Termination layer-compensated tunneling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy |
| JP2020042882A (ja) * | 2018-09-12 | 2020-03-19 | キオクシア株式会社 | 磁気メモリ |
| CN112700583B (zh) * | 2020-12-16 | 2025-05-23 | 宁波希磁电子科技有限公司 | 一种磁性识别装置、方法及系统和带有磁编码的被测物 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5650958A (en) * | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
| US6072718A (en) * | 1998-02-10 | 2000-06-06 | International Business Machines Corporation | Magnetic memory devices having multiple magnetic tunnel junctions therein |
| EP1892538A3 (en) * | 1999-06-18 | 2008-08-13 | Koninklijke Philips Electronics N.V. | Magnetic systems with irreversible characteristics and a method of manufacturing and repairing and operating such systems. |
| JP2001067620A (ja) * | 1999-08-24 | 2001-03-16 | Matsushita Electric Ind Co Ltd | 磁気抵抗効果素子の製造方法 |
| US6166948A (en) * | 1999-09-03 | 2000-12-26 | International Business Machines Corporation | Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers |
| JP2001196658A (ja) * | 2000-01-07 | 2001-07-19 | Fujitsu Ltd | 磁気素子及び磁気記憶装置 |
| US6385082B1 (en) * | 2000-11-08 | 2002-05-07 | International Business Machines Corp. | Thermally-assisted magnetic random access memory (MRAM) |
-
2002
- 2002-03-06 US US10/093,344 patent/US6625059B1/en not_active Expired - Lifetime
- 2002-11-25 TW TW091134208A patent/TW200304143A/zh unknown
-
2003
- 2003-02-27 EP EP03251202A patent/EP1343170A3/en not_active Withdrawn
- 2003-03-05 KR KR1020030013710A patent/KR100978641B1/ko not_active Expired - Fee Related
- 2003-03-05 JP JP2003058137A patent/JP4477829B2/ja not_active Expired - Lifetime
- 2003-03-06 CN CNB031199364A patent/CN100419902C/zh not_active Expired - Lifetime
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