CN100419902C - 用于磁性存储装置的合成铁磁体参考层 - Google Patents

用于磁性存储装置的合成铁磁体参考层 Download PDF

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Publication number
CN100419902C
CN100419902C CNB031199364A CN03119936A CN100419902C CN 100419902 C CN100419902 C CN 100419902C CN B031199364 A CNB031199364 A CN B031199364A CN 03119936 A CN03119936 A CN 03119936A CN 100419902 C CN100419902 C CN 100419902C
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CN
China
Prior art keywords
layer
magnetic
orientation
layers
reference layer
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Expired - Lifetime
Application number
CNB031199364A
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English (en)
Chinese (zh)
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CN1442861A (zh
Inventor
M·沙马
L·T·特兰
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of CN1442861A publication Critical patent/CN1442861A/zh
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Publication of CN100419902C publication Critical patent/CN100419902C/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H01F10/3277—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets by use of artificial ferrimagnets [AFI] only

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Magnetic Record Carriers (AREA)
CNB031199364A 2002-03-06 2003-03-06 用于磁性存储装置的合成铁磁体参考层 Expired - Lifetime CN100419902C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/093,344 US6625059B1 (en) 2002-03-06 2002-03-06 Synthetic ferrimagnet reference layer for a magnetic storage device
US10/093344 2002-03-06

Publications (2)

Publication Number Publication Date
CN1442861A CN1442861A (zh) 2003-09-17
CN100419902C true CN100419902C (zh) 2008-09-17

Family

ID=27754047

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031199364A Expired - Lifetime CN100419902C (zh) 2002-03-06 2003-03-06 用于磁性存储装置的合成铁磁体参考层

Country Status (6)

Country Link
US (1) US6625059B1 (enExample)
EP (1) EP1343170A3 (enExample)
JP (1) JP4477829B2 (enExample)
KR (1) KR100978641B1 (enExample)
CN (1) CN100419902C (enExample)
TW (1) TW200304143A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6967350B2 (en) * 2002-04-02 2005-11-22 Hewlett-Packard Development Company, L.P. Memory structures
US7167391B2 (en) * 2004-02-11 2007-01-23 Hewlett-Packard Development Company, L.P. Multilayer pinned reference layer for a magnetic storage device
US7102920B2 (en) * 2004-03-23 2006-09-05 Hewlett-Packard Development Company, L.P. Soft-reference three conductor magnetic memory storage device
US7622784B2 (en) * 2005-01-10 2009-11-24 International Business Machines Corporation MRAM device with improved stack structure and offset field for low-power toggle mode writing
US20090257168A1 (en) * 2008-04-11 2009-10-15 Northern Lights Semiconductor Corp. Apparatus for Storing Electrical Energy
KR101598833B1 (ko) * 2009-12-21 2016-03-03 삼성전자주식회사 자기 메모리 소자 및 그 동작방법
US8890266B2 (en) 2011-01-31 2014-11-18 Everspin Technologies, Inc. Fabrication process and layout for magnetic sensor arrays
US9583696B2 (en) 2014-03-12 2017-02-28 Qualcomm Incorporated Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction
US9666215B2 (en) 2015-10-28 2017-05-30 International Business Machines Corporation Termination layer-compensated tunneling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy
JP2020042882A (ja) * 2018-09-12 2020-03-19 キオクシア株式会社 磁気メモリ
CN112700583B (zh) * 2020-12-16 2025-05-23 宁波希磁电子科技有限公司 一种磁性识别装置、方法及系统和带有磁编码的被测物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5841692A (en) * 1996-03-18 1998-11-24 International Business Machines Corporation Magnetic tunnel junction device with antiferromagnetically coupled pinned layer
US6166948A (en) * 1999-09-03 2000-12-26 International Business Machines Corporation Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers
US20010007532A1 (en) * 2000-01-07 2001-07-12 Fujitsu Limited Magnetic element and magnetic memory device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072718A (en) * 1998-02-10 2000-06-06 International Business Machines Corporation Magnetic memory devices having multiple magnetic tunnel junctions therein
EP1892538A3 (en) * 1999-06-18 2008-08-13 Koninklijke Philips Electronics N.V. Magnetic systems with irreversible characteristics and a method of manufacturing and repairing and operating such systems.
JP2001067620A (ja) * 1999-08-24 2001-03-16 Matsushita Electric Ind Co Ltd 磁気抵抗効果素子の製造方法
US6385082B1 (en) * 2000-11-08 2002-05-07 International Business Machines Corp. Thermally-assisted magnetic random access memory (MRAM)

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5841692A (en) * 1996-03-18 1998-11-24 International Business Machines Corporation Magnetic tunnel junction device with antiferromagnetically coupled pinned layer
US6166948A (en) * 1999-09-03 2000-12-26 International Business Machines Corporation Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers
US20010007532A1 (en) * 2000-01-07 2001-07-12 Fujitsu Limited Magnetic element and magnetic memory device

Also Published As

Publication number Publication date
KR20030074233A (ko) 2003-09-19
US20030169620A1 (en) 2003-09-11
EP1343170A3 (en) 2003-11-19
EP1343170A2 (en) 2003-09-10
TW200304143A (en) 2003-09-16
JP4477829B2 (ja) 2010-06-09
JP2003272374A (ja) 2003-09-26
US6625059B1 (en) 2003-09-23
KR100978641B1 (ko) 2010-08-27
CN1442861A (zh) 2003-09-17

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: SAMSUNG ELECTRONICS CO., LTD

Free format text: FORMER OWNER: HEWLETT-PACKARD DEVELOPMENT COMPANY

Effective date: 20071026

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20071026

Address after: Gyeonggi Do, South Korea

Applicant after: SAMSUNG ELECTRONICS Co.,Ltd.

Address before: California, USA

Applicant before: Hewlett-Packard Co.

C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20080917

CX01 Expiry of patent term