JP4477829B2 - 磁気記憶デバイスを動作させる方法 - Google Patents

磁気記憶デバイスを動作させる方法 Download PDF

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Publication number
JP4477829B2
JP4477829B2 JP2003058137A JP2003058137A JP4477829B2 JP 4477829 B2 JP4477829 B2 JP 4477829B2 JP 2003058137 A JP2003058137 A JP 2003058137A JP 2003058137 A JP2003058137 A JP 2003058137A JP 4477829 B2 JP4477829 B2 JP 4477829B2
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Japan
Prior art keywords
layer
magnetization
magnetic
magnetic field
storage device
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Expired - Lifetime
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JP2003058137A
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English (en)
Japanese (ja)
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JP2003272374A (ja
JP2003272374A5 (enExample
Inventor
マニシュ・シャーマ
ルン・テ・トラン
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication date
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Publication of JP2003272374A5 publication Critical patent/JP2003272374A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H01F10/3277—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets by use of artificial ferrimagnets [AFI] only

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Magnetic Record Carriers (AREA)
JP2003058137A 2002-03-06 2003-03-05 磁気記憶デバイスを動作させる方法 Expired - Lifetime JP4477829B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/093,344 US6625059B1 (en) 2002-03-06 2002-03-06 Synthetic ferrimagnet reference layer for a magnetic storage device
US10/093344 2002-03-06

Publications (3)

Publication Number Publication Date
JP2003272374A JP2003272374A (ja) 2003-09-26
JP2003272374A5 JP2003272374A5 (enExample) 2005-04-21
JP4477829B2 true JP4477829B2 (ja) 2010-06-09

Family

ID=27754047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003058137A Expired - Lifetime JP4477829B2 (ja) 2002-03-06 2003-03-05 磁気記憶デバイスを動作させる方法

Country Status (6)

Country Link
US (1) US6625059B1 (enExample)
EP (1) EP1343170A3 (enExample)
JP (1) JP4477829B2 (enExample)
KR (1) KR100978641B1 (enExample)
CN (1) CN100419902C (enExample)
TW (1) TW200304143A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6967350B2 (en) * 2002-04-02 2005-11-22 Hewlett-Packard Development Company, L.P. Memory structures
US7167391B2 (en) * 2004-02-11 2007-01-23 Hewlett-Packard Development Company, L.P. Multilayer pinned reference layer for a magnetic storage device
US7102920B2 (en) * 2004-03-23 2006-09-05 Hewlett-Packard Development Company, L.P. Soft-reference three conductor magnetic memory storage device
US7622784B2 (en) * 2005-01-10 2009-11-24 International Business Machines Corporation MRAM device with improved stack structure and offset field for low-power toggle mode writing
US20090257168A1 (en) * 2008-04-11 2009-10-15 Northern Lights Semiconductor Corp. Apparatus for Storing Electrical Energy
KR101598833B1 (ko) * 2009-12-21 2016-03-03 삼성전자주식회사 자기 메모리 소자 및 그 동작방법
US8890266B2 (en) 2011-01-31 2014-11-18 Everspin Technologies, Inc. Fabrication process and layout for magnetic sensor arrays
US9583696B2 (en) 2014-03-12 2017-02-28 Qualcomm Incorporated Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction
US9666215B2 (en) 2015-10-28 2017-05-30 International Business Machines Corporation Termination layer-compensated tunneling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy
JP2020042882A (ja) * 2018-09-12 2020-03-19 キオクシア株式会社 磁気メモリ
CN112700583B (zh) * 2020-12-16 2025-05-23 宁波希磁电子科技有限公司 一种磁性识别装置、方法及系统和带有磁编码的被测物

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5650958A (en) * 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US6072718A (en) * 1998-02-10 2000-06-06 International Business Machines Corporation Magnetic memory devices having multiple magnetic tunnel junctions therein
EP1892538A3 (en) * 1999-06-18 2008-08-13 Koninklijke Philips Electronics N.V. Magnetic systems with irreversible characteristics and a method of manufacturing and repairing and operating such systems.
JP2001067620A (ja) * 1999-08-24 2001-03-16 Matsushita Electric Ind Co Ltd 磁気抵抗効果素子の製造方法
US6166948A (en) * 1999-09-03 2000-12-26 International Business Machines Corporation Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers
JP2001196658A (ja) * 2000-01-07 2001-07-19 Fujitsu Ltd 磁気素子及び磁気記憶装置
US6385082B1 (en) * 2000-11-08 2002-05-07 International Business Machines Corp. Thermally-assisted magnetic random access memory (MRAM)

Also Published As

Publication number Publication date
KR20030074233A (ko) 2003-09-19
US20030169620A1 (en) 2003-09-11
EP1343170A3 (en) 2003-11-19
EP1343170A2 (en) 2003-09-10
TW200304143A (en) 2003-09-16
CN100419902C (zh) 2008-09-17
JP2003272374A (ja) 2003-09-26
US6625059B1 (en) 2003-09-23
KR100978641B1 (ko) 2010-08-27
CN1442861A (zh) 2003-09-17

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