JP2003271218A - 半導体製造装置、半導体製造システム及び基板処理方法 - Google Patents

半導体製造装置、半導体製造システム及び基板処理方法

Info

Publication number
JP2003271218A
JP2003271218A JP2002073217A JP2002073217A JP2003271218A JP 2003271218 A JP2003271218 A JP 2003271218A JP 2002073217 A JP2002073217 A JP 2002073217A JP 2002073217 A JP2002073217 A JP 2002073217A JP 2003271218 A JP2003271218 A JP 2003271218A
Authority
JP
Japan
Prior art keywords
semiconductor manufacturing
substance
buffer unit
manufacturing apparatus
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002073217A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003271218A5 (https=
Inventor
Takashi Nakao
隆 中尾
Kunihiro Miyazaki
邦浩 宮崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002073217A priority Critical patent/JP2003271218A/ja
Priority to CNB031196365A priority patent/CN1277289C/zh
Priority to US10/387,423 priority patent/US20030221960A1/en
Publication of JP2003271218A publication Critical patent/JP2003271218A/ja
Publication of JP2003271218A5 publication Critical patent/JP2003271218A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]

Landscapes

  • Chemical Vapour Deposition (AREA)
  • General Factory Administration (AREA)
JP2002073217A 2002-03-15 2002-03-15 半導体製造装置、半導体製造システム及び基板処理方法 Pending JP2003271218A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002073217A JP2003271218A (ja) 2002-03-15 2002-03-15 半導体製造装置、半導体製造システム及び基板処理方法
CNB031196365A CN1277289C (zh) 2002-03-15 2003-03-13 半导体制造装置、半导体制造系统和衬底处理方法
US10/387,423 US20030221960A1 (en) 2002-03-15 2003-03-14 Semiconductor manufacturing device, semiconductor manufacturing system and substrate treating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002073217A JP2003271218A (ja) 2002-03-15 2002-03-15 半導体製造装置、半導体製造システム及び基板処理方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006214971A Division JP2006332700A (ja) 2006-08-07 2006-08-07 半導体製造装置、半導体製造システム及び基板処理方法

Publications (2)

Publication Number Publication Date
JP2003271218A true JP2003271218A (ja) 2003-09-26
JP2003271218A5 JP2003271218A5 (https=) 2004-11-25

Family

ID=28035228

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002073217A Pending JP2003271218A (ja) 2002-03-15 2002-03-15 半導体製造装置、半導体製造システム及び基板処理方法

Country Status (3)

Country Link
US (1) US20030221960A1 (https=)
JP (1) JP2003271218A (https=)
CN (1) CN1277289C (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009028114A1 (ja) * 2007-08-31 2009-03-05 Ulvac, Inc. エッチング装置
JP2013115117A (ja) * 2011-11-25 2013-06-10 Tokyo Electron Ltd 資源再利用装置、処理装置群コントローラ、資源再利用システム、資源再利用方法、及び資源再利用プログラム
JP2015184000A (ja) * 2014-03-20 2015-10-22 株式会社竹中工務店 実験設備
US20220356581A1 (en) * 2019-09-24 2022-11-10 Tokyo Electron Limited Gas supply device and gas supply method

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4294910B2 (ja) * 2002-03-27 2009-07-15 株式会社東芝 半導体デバイス製造プラントにおける物質供給システム
JP4462146B2 (ja) * 2004-09-17 2010-05-12 栗田工業株式会社 硫酸リサイクル型洗浄システムおよび硫酸リサイクル型過硫酸供給装置
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
WO2009100163A1 (en) * 2008-02-05 2009-08-13 Applied Materials, Inc. Methods and apparatus for operating an electronic device manufacturing system
KR101581673B1 (ko) * 2008-02-05 2015-12-31 어플라이드 머티어리얼스, 인코포레이티드 제조 프로세스들로부터의 가연성 폐기물 가스들을 처리하기 위한 시스템 및 방법
US20120092950A1 (en) * 2010-10-15 2012-04-19 Bertrand Michel Jean-Claude Colomb Low pressure drop blender
CN106884157B (zh) * 2011-03-04 2019-06-21 诺发系统公司 混合型陶瓷喷淋头
JP5859586B2 (ja) * 2013-12-27 2016-02-10 株式会社日立国際電気 基板処理システム、半導体装置の製造方法および記録媒体
US10741365B2 (en) 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
JP2016134569A (ja) * 2015-01-21 2016-07-25 株式会社東芝 半導体製造装置
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
CN107815730A (zh) * 2016-09-14 2018-03-20 上海新昇半导体科技有限公司 掺杂气体缓冲装置、掺杂气体供给装置及方法
CN108890529B (zh) * 2018-07-25 2023-06-23 浙江工业大学 光催化钴基合金加工控制系统及控制方法
US12486574B2 (en) 2019-08-23 2025-12-02 Lam Research Corporation Thermally controlled chandelier showerhead
JP2022546404A (ja) 2019-08-28 2022-11-04 ラム リサーチ コーポレーション 金属の堆積
CN117512561A (zh) * 2022-07-27 2024-02-06 拓荆科技股份有限公司 半导体处理系统

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5843239A (en) * 1997-03-03 1998-12-01 Applied Materials, Inc. Two-step process for cleaning a substrate processing chamber
US6799883B1 (en) * 1999-12-20 2004-10-05 Air Liquide America L.P. Method for continuously blending chemical solutions
US6101816A (en) * 1998-04-28 2000-08-15 Advanced Technology Materials, Inc. Fluid storage and dispensing system
JP3616732B2 (ja) * 1999-07-07 2005-02-02 東京エレクトロン株式会社 基板の処理方法及び処理装置
TW499504B (en) * 1999-09-09 2002-08-21 Yu-Tsai Liu Single chamber processing apparatus having multi-chamber functions
US6709989B2 (en) * 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
JP2003045947A (ja) * 2001-07-27 2003-02-14 Canon Inc 基板処理装置及び露光装置
TWI248988B (en) * 2001-09-19 2006-02-11 Ind Tech Res Inst Chemical solution's recycle apparatus for spin etching machine

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009028114A1 (ja) * 2007-08-31 2009-03-05 Ulvac, Inc. エッチング装置
JP2013115117A (ja) * 2011-11-25 2013-06-10 Tokyo Electron Ltd 資源再利用装置、処理装置群コントローラ、資源再利用システム、資源再利用方法、及び資源再利用プログラム
JP2015184000A (ja) * 2014-03-20 2015-10-22 株式会社竹中工務店 実験設備
US20220356581A1 (en) * 2019-09-24 2022-11-10 Tokyo Electron Limited Gas supply device and gas supply method

Also Published As

Publication number Publication date
US20030221960A1 (en) 2003-12-04
CN1445822A (zh) 2003-10-01
CN1277289C (zh) 2006-09-27

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