JP2003258107A - 半導体集積回路装置およびその製造方法 - Google Patents

半導体集積回路装置およびその製造方法

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Publication number
JP2003258107A
JP2003258107A JP2002053238A JP2002053238A JP2003258107A JP 2003258107 A JP2003258107 A JP 2003258107A JP 2002053238 A JP2002053238 A JP 2002053238A JP 2002053238 A JP2002053238 A JP 2002053238A JP 2003258107 A JP2003258107 A JP 2003258107A
Authority
JP
Japan
Prior art keywords
film
wiring
insulating film
forming
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002053238A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003258107A5 (enExample
Inventor
Masataka Minami
正隆 南
Naotaka Hashimoto
直孝 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2002053238A priority Critical patent/JP2003258107A/ja
Publication of JP2003258107A publication Critical patent/JP2003258107A/ja
Publication of JP2003258107A5 publication Critical patent/JP2003258107A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2002053238A 2002-02-28 2002-02-28 半導体集積回路装置およびその製造方法 Pending JP2003258107A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002053238A JP2003258107A (ja) 2002-02-28 2002-02-28 半導体集積回路装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002053238A JP2003258107A (ja) 2002-02-28 2002-02-28 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2003258107A true JP2003258107A (ja) 2003-09-12
JP2003258107A5 JP2003258107A5 (enExample) 2005-07-07

Family

ID=28664713

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002053238A Pending JP2003258107A (ja) 2002-02-28 2002-02-28 半導体集積回路装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP2003258107A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006319174A (ja) * 2005-05-13 2006-11-24 Renesas Technology Corp 半導体装置およびその製造方法
JP2008218902A (ja) * 2007-03-07 2008-09-18 Nec Electronics Corp 半導体装置およびその製造方法
KR100869751B1 (ko) 2007-09-07 2008-11-21 주식회사 동부하이텍 반도체 소자와 그의 제조방법
JP2009141237A (ja) * 2007-12-10 2009-06-25 Panasonic Corp 半導体装置及びその製造方法
US7633138B2 (en) 2005-08-12 2009-12-15 Nec Electronics Corporation Semiconductor device and method of manufacturing the same
US7906832B2 (en) 2007-10-26 2011-03-15 Rohm Co., Ltd. MIM capacitor structure having penetrating vias
JP2011211236A (ja) * 2011-07-15 2011-10-20 Renesas Electronics Corp 半導体装置
JP2013191764A (ja) * 2012-03-14 2013-09-26 Lapis Semiconductor Co Ltd 半導体装置の製造方法及び半導体装置
JP2017126796A (ja) * 2017-04-20 2017-07-20 ルネサスエレクトロニクス株式会社 半導体装置
JP2021048204A (ja) * 2019-09-17 2021-03-25 キオクシア株式会社 半導体装置及びその製造方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7531419B2 (en) 2005-05-13 2009-05-12 Renesas Technology Corp. Semiconductor device and a method of manufacturing the same
JP2006319174A (ja) * 2005-05-13 2006-11-24 Renesas Technology Corp 半導体装置およびその製造方法
US8049263B2 (en) 2005-05-13 2011-11-01 Renesas Electronics Corporation Semiconductor device including metal-insulator-metal capacitor and method of manufacturing same
US7633138B2 (en) 2005-08-12 2009-12-15 Nec Electronics Corporation Semiconductor device and method of manufacturing the same
US8486836B2 (en) 2007-03-07 2013-07-16 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
JP2008218902A (ja) * 2007-03-07 2008-09-18 Nec Electronics Corp 半導体装置およびその製造方法
US8030737B2 (en) 2007-03-07 2011-10-04 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
KR100869751B1 (ko) 2007-09-07 2008-11-21 주식회사 동부하이텍 반도체 소자와 그의 제조방법
US7906832B2 (en) 2007-10-26 2011-03-15 Rohm Co., Ltd. MIM capacitor structure having penetrating vias
US8395236B2 (en) 2007-10-26 2013-03-12 Rohm Co., Ltd. MIM capacitor structure having penetrating vias
JP2009141237A (ja) * 2007-12-10 2009-06-25 Panasonic Corp 半導体装置及びその製造方法
JP2011211236A (ja) * 2011-07-15 2011-10-20 Renesas Electronics Corp 半導体装置
JP2013191764A (ja) * 2012-03-14 2013-09-26 Lapis Semiconductor Co Ltd 半導体装置の製造方法及び半導体装置
JP2017126796A (ja) * 2017-04-20 2017-07-20 ルネサスエレクトロニクス株式会社 半導体装置
JP2021048204A (ja) * 2019-09-17 2021-03-25 キオクシア株式会社 半導体装置及びその製造方法
US11942431B2 (en) 2019-09-17 2024-03-26 Kioxia Corporation Semiconductor device and manufacturing method thereof

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