JP2003253371A - 高熱伝導性複合材およびその製造方法 - Google Patents

高熱伝導性複合材およびその製造方法

Info

Publication number
JP2003253371A
JP2003253371A JP2002369198A JP2002369198A JP2003253371A JP 2003253371 A JP2003253371 A JP 2003253371A JP 2002369198 A JP2002369198 A JP 2002369198A JP 2002369198 A JP2002369198 A JP 2002369198A JP 2003253371 A JP2003253371 A JP 2003253371A
Authority
JP
Japan
Prior art keywords
composite material
aluminum
high thermal
ceramic particles
thermal conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002369198A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003253371A5 (enExample
Inventor
Mitsutomo Nagano
充朋 長野
Akiyoshi Nishino
明義 西野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP2002369198A priority Critical patent/JP2003253371A/ja
Publication of JP2003253371A publication Critical patent/JP2003253371A/ja
Publication of JP2003253371A5 publication Critical patent/JP2003253371A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Landscapes

  • Manufacture Of Alloys Or Alloy Compounds (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2002369198A 2001-12-21 2002-12-20 高熱伝導性複合材およびその製造方法 Pending JP2003253371A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002369198A JP2003253371A (ja) 2001-12-21 2002-12-20 高熱伝導性複合材およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-388670 2001-12-21
JP2001388670 2001-12-21
JP2002369198A JP2003253371A (ja) 2001-12-21 2002-12-20 高熱伝導性複合材およびその製造方法

Publications (2)

Publication Number Publication Date
JP2003253371A true JP2003253371A (ja) 2003-09-10
JP2003253371A5 JP2003253371A5 (enExample) 2005-08-11

Family

ID=28676965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002369198A Pending JP2003253371A (ja) 2001-12-21 2002-12-20 高熱伝導性複合材およびその製造方法

Country Status (1)

Country Link
JP (1) JP2003253371A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006077755A1 (ja) * 2005-01-20 2006-07-27 A.L.M.T.Corp. 半導体装置用部材とその製造方法
US7746207B2 (en) 2003-11-05 2010-06-29 Tdk Corporation Coil device
JP2016184700A (ja) * 2015-03-26 2016-10-20 株式会社アライドマテリアル ヒートスプレッダ
CN115138842A (zh) * 2022-06-23 2022-10-04 洛阳科威钨钼有限公司 一种耐高温氧化的高温空气直接点火稳燃器外壳的制备方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7746207B2 (en) 2003-11-05 2010-06-29 Tdk Corporation Coil device
WO2006077755A1 (ja) * 2005-01-20 2006-07-27 A.L.M.T.Corp. 半導体装置用部材とその製造方法
CN100590856C (zh) * 2005-01-20 2010-02-17 联合材料公司 半导体装置用部件及其制造方法
US7749430B2 (en) 2005-01-20 2010-07-06 A.L.M.T. Corp. Member for semiconductor device and production method thereof
JP4913605B2 (ja) * 2005-01-20 2012-04-11 株式会社アライドマテリアル 半導体装置用部材の製造方法
JP2016184700A (ja) * 2015-03-26 2016-10-20 株式会社アライドマテリアル ヒートスプレッダ
CN115138842A (zh) * 2022-06-23 2022-10-04 洛阳科威钨钼有限公司 一种耐高温氧化的高温空气直接点火稳燃器外壳的制备方法
CN115138842B (zh) * 2022-06-23 2023-10-20 洛阳科威钨钼有限公司 一种耐高温氧化的高温空气直接点火稳燃器外壳的制备方法

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