JP2003243772A5 - - Google Patents

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Publication number
JP2003243772A5
JP2003243772A5 JP2002041171A JP2002041171A JP2003243772A5 JP 2003243772 A5 JP2003243772 A5 JP 2003243772A5 JP 2002041171 A JP2002041171 A JP 2002041171A JP 2002041171 A JP2002041171 A JP 2002041171A JP 2003243772 A5 JP2003243772 A5 JP 2003243772A5
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JP
Japan
Prior art keywords
layer
semiconductor light
light emitting
emitting device
side cladding
Prior art date
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Application number
JP2002041171A
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English (en)
Japanese (ja)
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JP4178807B2 (ja
JP2003243772A (ja
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Priority to JP2002041171A priority Critical patent/JP4178807B2/ja
Priority claimed from JP2002041171A external-priority patent/JP4178807B2/ja
Publication of JP2003243772A publication Critical patent/JP2003243772A/ja
Publication of JP2003243772A5 publication Critical patent/JP2003243772A5/ja
Application granted granted Critical
Publication of JP4178807B2 publication Critical patent/JP4178807B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002041171A 2002-02-19 2002-02-19 半導体発光素子およびその製造方法 Expired - Fee Related JP4178807B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002041171A JP4178807B2 (ja) 2002-02-19 2002-02-19 半導体発光素子およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002041171A JP4178807B2 (ja) 2002-02-19 2002-02-19 半導体発光素子およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004380818A Division JP4179280B2 (ja) 2004-12-28 2004-12-28 半導体発光素子の製造方法

Publications (3)

Publication Number Publication Date
JP2003243772A JP2003243772A (ja) 2003-08-29
JP2003243772A5 true JP2003243772A5 (enrdf_load_stackoverflow) 2005-08-11
JP4178807B2 JP4178807B2 (ja) 2008-11-12

Family

ID=27781664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002041171A Expired - Fee Related JP4178807B2 (ja) 2002-02-19 2002-02-19 半導体発光素子およびその製造方法

Country Status (1)

Country Link
JP (1) JP4178807B2 (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7485902B2 (en) * 2002-09-18 2009-02-03 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device
JP4508662B2 (ja) * 2004-01-22 2010-07-21 シャープ株式会社 窒化ガリウム系半導体発光素子
JP2005294753A (ja) * 2004-04-05 2005-10-20 Toshiba Corp 半導体発光素子
JP2007066981A (ja) 2005-08-29 2007-03-15 Toshiba Corp 半導体装置
JP2007235107A (ja) * 2006-02-02 2007-09-13 Mitsubishi Electric Corp 半導体発光素子
KR101221067B1 (ko) * 2006-02-09 2013-01-11 삼성전자주식회사 리지 도파형 반도체 레이저 다이오드
US8178889B2 (en) 2006-07-05 2012-05-15 Panasonic Corporation Semiconductor light emitting element having a single defect concentrated region and a light emitting which is not formed on the single defect concentrated region
JP2010187034A (ja) * 2010-06-01 2010-08-26 Toshiba Corp 半導体装置
JP7323786B2 (ja) * 2019-01-17 2023-08-09 日亜化学工業株式会社 半導体レーザ素子

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