JP2003204122A5 - - Google Patents

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Publication number
JP2003204122A5
JP2003204122A5 JP2001402091A JP2001402091A JP2003204122A5 JP 2003204122 A5 JP2003204122 A5 JP 2003204122A5 JP 2001402091 A JP2001402091 A JP 2001402091A JP 2001402091 A JP2001402091 A JP 2001402091A JP 2003204122 A5 JP2003204122 A5 JP 2003204122A5
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JP
Japan
Prior art keywords
layer
nitride semiconductor
semiconductor device
active
cladding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001402091A
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English (en)
Japanese (ja)
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JP4401610B2 (ja
JP2003204122A (ja
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Publication date
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Priority to JP2001402091A priority Critical patent/JP4401610B2/ja
Priority claimed from JP2001402091A external-priority patent/JP4401610B2/ja
Publication of JP2003204122A publication Critical patent/JP2003204122A/ja
Publication of JP2003204122A5 publication Critical patent/JP2003204122A5/ja
Application granted granted Critical
Publication of JP4401610B2 publication Critical patent/JP4401610B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001402091A 2001-12-28 2001-12-28 窒化物半導体レーザ素子 Expired - Fee Related JP4401610B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001402091A JP4401610B2 (ja) 2001-12-28 2001-12-28 窒化物半導体レーザ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001402091A JP4401610B2 (ja) 2001-12-28 2001-12-28 窒化物半導体レーザ素子

Publications (3)

Publication Number Publication Date
JP2003204122A JP2003204122A (ja) 2003-07-18
JP2003204122A5 true JP2003204122A5 (enrdf_load_stackoverflow) 2005-06-16
JP4401610B2 JP4401610B2 (ja) 2010-01-20

Family

ID=27640441

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001402091A Expired - Fee Related JP4401610B2 (ja) 2001-12-28 2001-12-28 窒化物半導体レーザ素子

Country Status (1)

Country Link
JP (1) JP4401610B2 (enrdf_load_stackoverflow)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4011569B2 (ja) 2003-08-20 2007-11-21 株式会社東芝 半導体発光素子
JP3857295B2 (ja) 2004-11-10 2006-12-13 三菱電機株式会社 半導体発光素子
KR100850950B1 (ko) 2006-07-26 2008-08-08 엘지전자 주식회사 질화물계 발광 소자
KR100862497B1 (ko) * 2006-12-26 2008-10-08 삼성전기주식회사 질화물 반도체 소자
JP2008288538A (ja) * 2007-05-15 2008-11-27 Philips Lumileds Lightng Co Llc ＩＩＩ族窒化物発光デバイスのためのｐ型層
KR101393352B1 (ko) * 2007-06-12 2014-05-12 서울바이오시스 주식회사 다중양자웰 구조의 활성 영역을 갖는 발광 다이오드
US7649195B2 (en) * 2007-06-12 2010-01-19 Seoul Opto Device Co., Ltd. Light emitting diode having active region of multi quantum well structure
JP4892618B2 (ja) 2010-02-16 2012-03-07 株式会社東芝 半導体発光素子
JP5510183B2 (ja) * 2010-08-19 2014-06-04 日亜化学工業株式会社 窒化物半導体発光素子
JP5429153B2 (ja) * 2010-12-27 2014-02-26 住友電気工業株式会社 窒化ガリウム系半導体発光素子
JP5553035B2 (ja) * 2011-01-24 2014-07-16 住友電気工業株式会社 窒化ガリウム系半導体レーザ素子
JP5405545B2 (ja) * 2011-09-13 2014-02-05 シャープ株式会社 光電変換素子
JP2012069970A (ja) * 2011-11-01 2012-04-05 Toshiba Corp 半導体素子
JP5337862B2 (ja) * 2011-12-19 2013-11-06 株式会社東芝 半導体発光素子
KR101922529B1 (ko) 2012-08-28 2018-11-28 엘지이노텍 주식회사 발광소자
JP5554387B2 (ja) * 2012-10-25 2014-07-23 株式会社東芝 半導体発光素子
JP5764184B2 (ja) * 2013-11-18 2015-08-12 株式会社東芝 半導体発光素子
JP6781251B2 (ja) * 2015-12-22 2020-11-04 アップル インコーポレイテッドＡｐｐｌｅ Ｉｎｃ． 非発光性再結合を低減するためのｌｅｄの側壁処理

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