JP4508662B2 - 窒化ガリウム系半導体発光素子 - Google Patents
窒化ガリウム系半導体発光素子 Download PDFInfo
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- JP4508662B2 JP4508662B2 JP2004014584A JP2004014584A JP4508662B2 JP 4508662 B2 JP4508662 B2 JP 4508662B2 JP 2004014584 A JP2004014584 A JP 2004014584A JP 2004014584 A JP2004014584 A JP 2004014584A JP 4508662 B2 JP4508662 B2 JP 4508662B2
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- layer
- emitting device
- gallium nitride
- light emitting
- ingan
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- 229910002601 GaN Inorganic materials 0.000 title claims description 96
- 239000004065 semiconductor Substances 0.000 title claims description 46
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 37
- 239000000203 mixture Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 30
- 230000003287 optical effect Effects 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 description 32
- 238000005253 cladding Methods 0.000 description 16
- 108091006149 Electron carriers Proteins 0.000 description 13
- 229910002704 AlGaN Inorganic materials 0.000 description 11
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000011777 magnesium Substances 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Description
この式において、Ithは温度T(K)におけるレーザ素子の閾値電流を表し、I0は定数を表わしている。そして、或るレーザ素子について異なる2つの温度Tのそれぞれにおいて閾値電流Ithを測定すれば、式(1)から、そのレーザ素子の温度特性T0を求めることができる。
Claims (7)
- 量子井戸層とキャリアブロック層を含み、
前記量子井戸層と前記キャリアブロック層との間に中間層をさらに含み、
前記中間層は前記量子井戸層に接する側から順に第1のInGaN層、第2のInGaN層、およびGaN層を含み、
前記中間層は40nm以上で150nm以下の総厚を有し、
前記第1のInGaN層と前記第2のInGaN層との合計厚さが5nm以上50nm以下であり、
前記第2のInGaN層のIn組成比が0.025以上0.04以下であり、
前記第1のInGaN層のIn組成比が前記第2のInGaN層のIn組成比よりも低いことを特徴とする窒化ガリウム系半導体発光素子。 - 前記中間層の総厚が70nm以上であることを特徴とする請求項1に記載の窒化ガリウム系半導体発光素子。
- 前記第2のInGaN層にn型不純物がドープされており、前記GaN層がノンドープであることを特徴とする請求項1または2に記載の窒化ガリウム系半導体発光素子。
- 前記発光素子はリッジ構造を有し、そのリッジ構造の底面部が前記中間層中に位置することを特徴とする請求項1から3のいずれかに記載の窒化ガリウム系半導体発光素子。
- 前記発光素子は基板上に形成されていてかつリッジ構造を有し、そのリッジ構造の底面部が前記中間層よりも前記基板側に位置することを特徴とする請求項1から4のいずれかに記載の窒化ガリウム系半導体発光素子。
- 請求項1から5のいずれかに記載の窒化ガリウム系半導体発光素子を製造するための方法であって、前記GaN層はランピング成長により形成されることを特徴とする窒化ガリウム系半導体発光素子の製造方法。
- 請求項1から5のいずれかに記載の窒化ガリウム系半導体発光素子を含むことを特徴とする光ディスク装置。
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JP2004014584A JP4508662B2 (ja) | 2004-01-22 | 2004-01-22 | 窒化ガリウム系半導体発光素子 |
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JP2004014584A JP4508662B2 (ja) | 2004-01-22 | 2004-01-22 | 窒化ガリウム系半導体発光素子 |
Publications (2)
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JP2005209873A JP2005209873A (ja) | 2005-08-04 |
JP4508662B2 true JP4508662B2 (ja) | 2010-07-21 |
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JP2004014584A Expired - Fee Related JP4508662B2 (ja) | 2004-01-22 | 2004-01-22 | 窒化ガリウム系半導体発光素子 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9124071B2 (en) | 2012-11-27 | 2015-09-01 | Nichia Corporation | Nitride semiconductor laser element |
JP6477642B2 (ja) * | 2016-09-23 | 2019-03-06 | 日亜化学工業株式会社 | 発光素子 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10190132A (ja) * | 1996-12-26 | 1998-07-21 | Toyoda Gosei Co Ltd | 3族窒化物半導体レーザ素子 |
JP2002261395A (ja) * | 2000-12-28 | 2002-09-13 | Sony Corp | 半導体発光素子およびその製造方法ならびに半導体装置およびその製造方法 |
JP2003243772A (ja) * | 2002-02-19 | 2003-08-29 | Sony Corp | 半導体発光素子およびその製造方法 |
JP2003289176A (ja) * | 2002-01-24 | 2003-10-10 | Sony Corp | 半導体発光素子およびその製造方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10190132A (ja) * | 1996-12-26 | 1998-07-21 | Toyoda Gosei Co Ltd | 3族窒化物半導体レーザ素子 |
JP2002261395A (ja) * | 2000-12-28 | 2002-09-13 | Sony Corp | 半導体発光素子およびその製造方法ならびに半導体装置およびその製造方法 |
JP2003289176A (ja) * | 2002-01-24 | 2003-10-10 | Sony Corp | 半導体発光素子およびその製造方法 |
JP2003243772A (ja) * | 2002-02-19 | 2003-08-29 | Sony Corp | 半導体発光素子およびその製造方法 |
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