JP2003234488A - 光電変換素子の製造方法 - Google Patents

光電変換素子の製造方法

Info

Publication number
JP2003234488A
JP2003234488A JP2002031460A JP2002031460A JP2003234488A JP 2003234488 A JP2003234488 A JP 2003234488A JP 2002031460 A JP2002031460 A JP 2002031460A JP 2002031460 A JP2002031460 A JP 2002031460A JP 2003234488 A JP2003234488 A JP 2003234488A
Authority
JP
Japan
Prior art keywords
transport layer
photoelectric conversion
conversion element
layer
element according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002031460A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003234488A5 (enExample
Inventor
Yuji Fujimori
裕司 藤森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2002031460A priority Critical patent/JP2003234488A/ja
Publication of JP2003234488A publication Critical patent/JP2003234488A/ja
Publication of JP2003234488A5 publication Critical patent/JP2003234488A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)
JP2002031460A 2002-02-07 2002-02-07 光電変換素子の製造方法 Withdrawn JP2003234488A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002031460A JP2003234488A (ja) 2002-02-07 2002-02-07 光電変換素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002031460A JP2003234488A (ja) 2002-02-07 2002-02-07 光電変換素子の製造方法

Publications (2)

Publication Number Publication Date
JP2003234488A true JP2003234488A (ja) 2003-08-22
JP2003234488A5 JP2003234488A5 (enExample) 2005-08-18

Family

ID=27774863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002031460A Withdrawn JP2003234488A (ja) 2002-02-07 2002-02-07 光電変換素子の製造方法

Country Status (1)

Country Link
JP (1) JP2003234488A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015137324A1 (ja) * 2014-03-14 2015-09-17 東京応化工業株式会社 結晶成長制御剤、ｐ型半導体微粒子又はｐ型半導体微粒子膜の形成方法、正孔輸送層形成用組成物、及び太陽電池
JP2015177037A (ja) * 2014-03-14 2015-10-05 東京応化工業株式会社 正孔輸送層形成用組成物及び太陽電池
JP2015177036A (ja) * 2014-03-14 2015-10-05 東京応化工業株式会社 結晶成長制御剤、ｐ型半導体微粒子又はｐ型半導体微粒子膜の形成方法、正孔輸送層形成用組成物、及び太陽電池

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015137324A1 (ja) * 2014-03-14 2015-09-17 東京応化工業株式会社 結晶成長制御剤、ｐ型半導体微粒子又はｐ型半導体微粒子膜の形成方法、正孔輸送層形成用組成物、及び太陽電池
JP2015177037A (ja) * 2014-03-14 2015-10-05 東京応化工業株式会社 正孔輸送層形成用組成物及び太陽電池
JP2015177036A (ja) * 2014-03-14 2015-10-05 東京応化工業株式会社 結晶成長制御剤、ｐ型半導体微粒子又はｐ型半導体微粒子膜の形成方法、正孔輸送層形成用組成物、及び太陽電池

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