JP2003203920A5 - - Google Patents

Download PDF

Info

Publication number
JP2003203920A5
JP2003203920A5 JP2001402080A JP2001402080A JP2003203920A5 JP 2003203920 A5 JP2003203920 A5 JP 2003203920A5 JP 2001402080 A JP2001402080 A JP 2001402080A JP 2001402080 A JP2001402080 A JP 2001402080A JP 2003203920 A5 JP2003203920 A5 JP 2003203920A5
Authority
JP
Japan
Prior art keywords
shape
island
semiconductor layer
region
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001402080A
Other languages
English (en)
Japanese (ja)
Other versions
JP4030759B2 (ja
JP2003203920A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001402080A priority Critical patent/JP4030759B2/ja
Priority claimed from JP2001402080A external-priority patent/JP4030759B2/ja
Publication of JP2003203920A publication Critical patent/JP2003203920A/ja
Publication of JP2003203920A5 publication Critical patent/JP2003203920A5/ja
Application granted granted Critical
Publication of JP4030759B2 publication Critical patent/JP4030759B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2001402080A 2001-12-28 2001-12-28 表示装置の作製方法 Expired - Fee Related JP4030759B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001402080A JP4030759B2 (ja) 2001-12-28 2001-12-28 表示装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001402080A JP4030759B2 (ja) 2001-12-28 2001-12-28 表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003203920A JP2003203920A (ja) 2003-07-18
JP2003203920A5 true JP2003203920A5 (enExample) 2005-08-04
JP4030759B2 JP4030759B2 (ja) 2008-01-09

Family

ID=27640435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001402080A Expired - Fee Related JP4030759B2 (ja) 2001-12-28 2001-12-28 表示装置の作製方法

Country Status (1)

Country Link
JP (1) JP4030759B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100543478B1 (ko) 2002-12-31 2006-01-20 엘지.필립스 엘시디 주식회사 유기전계 발광소자와 그 제조방법
JP5008288B2 (ja) * 2004-09-29 2012-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2008252068A (ja) 2007-03-08 2008-10-16 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US8048749B2 (en) 2007-07-26 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP7624321B2 (ja) * 2021-02-15 2025-01-30 芝浦メカトロニクス株式会社 プラズマ処理装置

Similar Documents

Publication Publication Date Title
JP2003204067A5 (enExample)
CN106486522B (zh) 有机发光显示装置及其制造方法
CN101090124B (zh) 半导体器件
US7704812B2 (en) Semiconductor circuit and method of fabricating the same
JP5060738B2 (ja) 画像表示装置
JP2003197521A5 (enExample)
KR100769775B1 (ko) 반도체 장치 및 그 제조 방법
US8673674B2 (en) Organic light emitting diode display device and method of fabricating the same
CN106663697B (zh) 薄膜晶体管及显示面板
KR970076045A (ko) 반도체 장치의 제조 방법
TW200427095A (en) Thin film transistor and method for fabricating thereof
JP2003203918A5 (enExample)
CN107408578A (zh) 薄膜晶体管以及显示面板
KR20120058109A (ko) 박막 트랜지스터 표시판의 제조 방법
JP2003203920A5 (enExample)
WO2012004925A1 (ja) 半導体装置及びその製造方法並びに液晶表示装置
US7557376B2 (en) Display device using first and second semiconductor films of different crystallinity and boundary section therebetween
CN108028201B (zh) 薄膜晶体管和薄膜晶体管的制造方法
CN1655056B (zh) 光学掩模及利用该掩模的薄膜晶体管阵列面板的制造方法
TW200409364A (en) Structure of thin film transistor array and driving circuits
JP2010287645A (ja) 薄膜トランジスタおよびその製造方法
TW575866B (en) Display device with active-matrix transistor and method for manufacturing the same
JP4693439B2 (ja) アクティブマトリクス基板の製造方法
JP2001352073A5 (enExample)
US20100283059A1 (en) Semiconductor device and method for manufacturing same