JP2003133404A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003133404A5 JP2003133404A5 JP2002228459A JP2002228459A JP2003133404A5 JP 2003133404 A5 JP2003133404 A5 JP 2003133404A5 JP 2002228459 A JP2002228459 A JP 2002228459A JP 2002228459 A JP2002228459 A JP 2002228459A JP 2003133404 A5 JP2003133404 A5 JP 2003133404A5
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic chuck
- vacuum chamber
- performance
- measuring
- applying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000005513 bias potential Methods 0.000 claims description 5
- 230000000452 restraining effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 44
- 238000005259 measurement Methods 0.000 claims 9
- 238000010438 heat treatment Methods 0.000 claims 6
- 239000002245 particle Substances 0.000 claims 5
- 239000000523 sample Substances 0.000 claims 5
- 230000000087 stabilizing effect Effects 0.000 claims 4
- 238000001816 cooling Methods 0.000 claims 2
- 230000002596 correlated effect Effects 0.000 claims 2
- 230000000875 corresponding effect Effects 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000006641 stabilisation Effects 0.000 claims 1
- 238000011105 stabilization Methods 0.000 claims 1
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US924038 | 2001-08-07 | ||
| US09/924,038 US6853953B2 (en) | 2001-08-07 | 2001-08-07 | Method for characterizing the performance of an electrostatic chuck |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003133404A JP2003133404A (ja) | 2003-05-09 |
| JP2003133404A5 true JP2003133404A5 (enExample) | 2005-10-27 |
| JP4297659B2 JP4297659B2 (ja) | 2009-07-15 |
Family
ID=25449622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002228459A Expired - Fee Related JP4297659B2 (ja) | 2001-08-07 | 2002-08-06 | 静電チャックの性能を特徴付ける方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6853953B2 (enExample) |
| JP (1) | JP4297659B2 (enExample) |
Families Citing this family (72)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10216786C5 (de) * | 2002-04-15 | 2009-10-15 | Ers Electronic Gmbh | Verfahren und Vorrichtung zur Konditionierung von Halbleiterwafern und/oder Hybriden |
| TWI275913B (en) * | 2003-02-12 | 2007-03-11 | Asml Netherlands Bv | Lithographic apparatus and method to detect correct clamping of an object |
| US7015414B2 (en) * | 2003-09-30 | 2006-03-21 | Tokyo Electron Limited | Method and apparatus for determining plasma impedance |
| JP4580283B2 (ja) * | 2005-06-14 | 2010-11-10 | 信越化学工業株式会社 | 静電チャックの評価方法 |
| US7802917B2 (en) * | 2005-08-05 | 2010-09-28 | Lam Research Corporation | Method and apparatus for chuck thermal calibration |
| US7383141B2 (en) * | 2005-11-01 | 2008-06-03 | Varian Semiconductor Equipment Associates, Inc. | Faraday system integrity determination |
| US7633307B2 (en) * | 2005-12-16 | 2009-12-15 | Freescale Semiconductor, Inc. | Method for determining temperature profile in semiconductor manufacturing test |
| US20080084650A1 (en) * | 2006-10-04 | 2008-04-10 | Applied Materials, Inc. | Apparatus and method for substrate clamping in a plasma chamber |
| JP5003102B2 (ja) * | 2006-10-27 | 2012-08-15 | 東京エレクトロン株式会社 | 静電チャックの診断方法、真空処理装置及び記憶媒体 |
| US7582491B2 (en) * | 2006-10-27 | 2009-09-01 | Tokyo Electron Limited | Method for diagnosing electrostatic chuck, vacuum processing apparatus, and storage medium |
| US8422193B2 (en) * | 2006-12-19 | 2013-04-16 | Axcelis Technologies, Inc. | Annulus clamping and backside gas cooled electrostatic chuck |
| US8022718B2 (en) * | 2008-02-29 | 2011-09-20 | Lam Research Corporation | Method for inspecting electrostatic chucks with Kelvin probe analysis |
| US9036326B2 (en) * | 2008-04-30 | 2015-05-19 | Axcelis Technologies, Inc. | Gas bearing electrostatic chuck |
| TWI475594B (zh) | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
| US8596336B2 (en) * | 2008-06-03 | 2013-12-03 | Applied Materials, Inc. | Substrate support temperature control |
| US8291565B2 (en) * | 2008-10-10 | 2012-10-23 | Lam Research Corporation | Method of refurbishing bipolar electrostatic chuck |
| US8143904B2 (en) * | 2008-10-10 | 2012-03-27 | Lam Research Corporation | System and method for testing an electrostatic chuck |
| US9287086B2 (en) | 2010-04-26 | 2016-03-15 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution |
| US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US9435029B2 (en) | 2010-08-29 | 2016-09-06 | Advanced Energy Industries, Inc. | Wafer chucking system for advanced plasma ion energy processing systems |
| US9287092B2 (en) * | 2009-05-01 | 2016-03-15 | Advanced Energy Industries, Inc. | Method and apparatus for controlling ion energy distribution |
| SG176059A1 (en) | 2009-05-15 | 2011-12-29 | Entegris Inc | Electrostatic chuck with polymer protrusions |
| US8861170B2 (en) | 2009-05-15 | 2014-10-14 | Entegris, Inc. | Electrostatic chuck with photo-patternable soft protrusion contact surface |
| DE102009044276A1 (de) * | 2009-10-16 | 2011-05-05 | Aixtron Ag | CVD-Reaktor mit auf einem mehrere Zonen aufweisenden Gaspolster liegenden Substrathalter |
| JP5960384B2 (ja) * | 2009-10-26 | 2016-08-02 | 新光電気工業株式会社 | 静電チャック用基板及び静電チャック |
| JP5459907B2 (ja) * | 2010-01-27 | 2014-04-02 | 東京エレクトロン株式会社 | 基板載置装置の評価装置、及びその評価方法、並びにそれに用いる評価用基板 |
| EP2354769B1 (de) * | 2010-02-03 | 2015-04-01 | Micronas GmbH | Winkelgeber und Verfahren zur Bestimmung eines Winkels zwischen einer Sensoranordnung und einem Magnetfeld |
| US9309594B2 (en) | 2010-04-26 | 2016-04-12 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution of a projected plasma |
| WO2011149918A2 (en) | 2010-05-28 | 2011-12-01 | Entegris, Inc. | High surface resistivity electrostatic chuck |
| US9362089B2 (en) | 2010-08-29 | 2016-06-07 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| CN103843128B (zh) * | 2011-09-30 | 2017-11-21 | 应用材料公司 | 静电夹具 |
| US10069443B2 (en) * | 2011-12-20 | 2018-09-04 | Tokyo Electron Limited | Dechuck control method and plasma processing apparatus |
| JP2012138581A (ja) * | 2012-01-10 | 2012-07-19 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
| US9368379B2 (en) * | 2012-03-14 | 2016-06-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods of controlling semiconductor wafer fabrication processes |
| JP6377060B2 (ja) | 2012-08-28 | 2018-08-22 | アドバンスト・エナジー・インダストリーズ・インコーポレイテッドAdvanced Energy Industries, Inc. | 広ダイナミックレンジイオンエネルギーバイアス制御、高速イオンエネルギー切り替え、イオンエネルギー制御およびパルスバイアス供給部、および仮想フロントパネル |
| US9210790B2 (en) | 2012-08-28 | 2015-12-08 | Advanced Energy Industries, Inc. | Systems and methods for calibrating a switched mode ion energy distribution system |
| US9685297B2 (en) * | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| US9349630B2 (en) * | 2013-03-15 | 2016-05-24 | Applied Materials, Inc. | Methods and apparatus for electrostatic chuck repair and refurbishment |
| US9601301B2 (en) * | 2013-06-25 | 2017-03-21 | Applied Materials, Inc. | Non-intrusive measurement of a wafer DC self-bias in semiconductor processing equipment |
| US9281227B2 (en) * | 2013-06-28 | 2016-03-08 | Axcelis Technologies, Inc. | Multi-resistivity Johnsen-Rahbek electrostatic clamp |
| KR102223623B1 (ko) | 2014-07-30 | 2021-03-08 | 삼성전자주식회사 | 반도체 제조설비의 관리방법 및 그의 관리시스템 |
| US10460969B2 (en) * | 2016-08-22 | 2019-10-29 | Applied Materials, Inc. | Bipolar electrostatic chuck and method for using the same |
| KR102581356B1 (ko) * | 2016-08-30 | 2023-09-21 | 삼성전자주식회사 | 기판 처리 장치의 이상 진단 방법 및 이를 수행하기 위한 장치 |
| US10636630B2 (en) * | 2017-07-27 | 2020-04-28 | Applied Materials, Inc. | Processing chamber and method with thermal control |
| US10649006B2 (en) | 2017-10-06 | 2020-05-12 | Lam Research Corporation | Cathode RF asymmetry detection probe for semiconductor RF plasma processing equipment |
| TW202431899A (zh) | 2017-11-17 | 2024-08-01 | 新加坡商Aes 全球公司 | 用於在空間域和時間域上控制基板上的電漿處理之系統和方法,及相關的電腦可讀取媒體 |
| US12505986B2 (en) | 2017-11-17 | 2025-12-23 | Advanced Energy Industries, Inc. | Synchronization of plasma processing components |
| US11437221B2 (en) | 2017-11-17 | 2022-09-06 | Advanced Energy Industries, Inc. | Spatial monitoring and control of plasma processing environments |
| WO2019099937A1 (en) | 2017-11-17 | 2019-05-23 | Advanced Energy Industries, Inc. | Improved application of modulating supplies in a plasma processing system |
| US12230476B2 (en) | 2017-11-17 | 2025-02-18 | Advanced Energy Industries, Inc. | Integrated control of a plasma processing system |
| PL3711080T3 (pl) | 2017-11-17 | 2023-12-11 | Aes Global Holdings, Pte. Ltd. | Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża |
| JP7321768B2 (ja) * | 2018-05-23 | 2023-08-07 | 信越化学工業株式会社 | 化学気相成長装置および被膜形成方法 |
| US11054317B2 (en) * | 2018-09-28 | 2021-07-06 | Applied Materials, Inc. | Method and apparatus for direct measurement of chucking force on an electrostatic chuck |
| US10546731B1 (en) * | 2018-10-05 | 2020-01-28 | Applied Materials, Inc. | Method, apparatus and system for wafer dechucking using dynamic voltage sweeping |
| CN113711126B (zh) * | 2018-12-20 | 2024-08-09 | Asml荷兰有限公司 | 包括静电夹具的载物台 |
| JP7199279B2 (ja) * | 2019-03-26 | 2023-01-05 | 東京エレクトロン株式会社 | 基板処理装置及び載置台の除電方法 |
| JP7603649B2 (ja) | 2019-07-12 | 2024-12-20 | エーイーエス グローバル ホールディングス, プライベート リミテッド | 単一制御型スイッチを伴うバイアス供給装置 |
| WO2021021513A1 (en) * | 2019-07-29 | 2021-02-04 | Applied Materials, Inc. | Semiconductor substrate supports with improved high temperature chucking |
| JP6935528B2 (ja) * | 2020-03-02 | 2021-09-15 | 浜松ホトニクス株式会社 | 静電チャック装置用電源、静電チャック装置、及びデチャック制御方法 |
| US12125674B2 (en) | 2020-05-11 | 2024-10-22 | Advanced Energy Industries, Inc. | Surface charge and power feedback and control using a switch mode bias system |
| CN111968901B (zh) * | 2020-08-25 | 2022-08-16 | 北京北方华创微电子装备有限公司 | 半导体反应腔室及半导体加工设备 |
| CN114908334B (zh) * | 2021-02-09 | 2025-10-14 | 中微半导体设备(上海)股份有限公司 | 下电极组件、化学气相沉积装置及基片温度控制方法 |
| US11610800B2 (en) | 2021-03-22 | 2023-03-21 | Applied Materials, Inc. | Capacitive method of detecting wafer chucking and de-chucking |
| KR102797114B1 (ko) * | 2021-07-07 | 2025-04-18 | 삼성전자주식회사 | 기판 처리 장치용 임피던스 측정 지그 및 이를 이용한 기판 처리 장치의 제어 방법 |
| US20230195061A1 (en) * | 2021-12-21 | 2023-06-22 | Applied Materials, Inc. | Manufacturing equipment parts quality management system |
| US20230195060A1 (en) * | 2021-12-21 | 2023-06-22 | Applied Materials, Inc. | Substrate support characterization to build a digital twin |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
| US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
| US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
| US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
| CN117187787A (zh) * | 2023-09-04 | 2023-12-08 | 拓荆创益(沈阳)半导体设备有限公司 | 薄膜沉积设备及其控制方法以及存储介质 |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1281573B (de) | 1964-12-08 | 1968-10-31 | Kalle Ag | Messsonde zur Bestimmung der oertlichen Ladungsverteilung auf Oberflaechen von Festkoerpern |
| US4724393A (en) | 1985-11-12 | 1988-02-09 | Murata Manufacturing Co., Ltd. | Surface potential detector |
| US5213349A (en) * | 1991-12-18 | 1993-05-25 | Elliott Joe C | Electrostatic chuck |
| US6022458A (en) * | 1992-12-07 | 2000-02-08 | Canon Kabushiki Kaisha | Method of production of a semiconductor substrate |
| US5382311A (en) * | 1992-12-17 | 1995-01-17 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
| US5557215A (en) | 1993-05-12 | 1996-09-17 | Tokyo Electron Limited | Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus |
| US5511799A (en) * | 1993-06-07 | 1996-04-30 | Applied Materials, Inc. | Sealing device useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential |
| US5647945A (en) * | 1993-08-25 | 1997-07-15 | Tokyo Electron Limited | Vacuum processing apparatus |
| JP2654340B2 (ja) | 1993-11-11 | 1997-09-17 | 株式会社フロンテック | 基板表面電位測定方法及びプラズマ装置 |
| JP3247270B2 (ja) * | 1994-08-25 | 2002-01-15 | 東京エレクトロン株式会社 | 処理装置及びドライクリーニング方法 |
| US5779925A (en) * | 1994-10-14 | 1998-07-14 | Fujitsu Limited | Plasma processing with less damage |
| US5576629A (en) | 1994-10-24 | 1996-11-19 | Fourth State Technology, Inc. | Plasma monitoring and control method and system |
| US5792562A (en) * | 1995-01-12 | 1998-08-11 | Applied Materials, Inc. | Electrostatic chuck with polymeric impregnation and method of making |
| JP3457477B2 (ja) | 1995-09-06 | 2003-10-20 | 日本碍子株式会社 | 静電チャック |
| US5841623A (en) * | 1995-12-22 | 1998-11-24 | Lam Research Corporation | Chuck for substrate processing and method for depositing a film in a radio frequency biased plasma chemical depositing system |
| US6252354B1 (en) * | 1996-11-04 | 2001-06-26 | Applied Materials, Inc. | RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control |
| US6095084A (en) * | 1996-02-02 | 2000-08-01 | Applied Materials, Inc. | High density plasma process chamber |
| US5820723A (en) * | 1996-06-05 | 1998-10-13 | Lam Research Corporation | Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
| US5948704A (en) * | 1996-06-05 | 1999-09-07 | Lam Research Corporation | High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
| US6284093B1 (en) * | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
| US5861086A (en) * | 1997-03-10 | 1999-01-19 | Applied Materials, Inc. | Method and apparatus for sputter etch conditioning a ceramic body |
| US5917327A (en) | 1997-09-08 | 1999-06-29 | Vlsi Technology, Inc. | Technique and apparatus for testing electrostatic chucks |
| US6149730A (en) * | 1997-10-08 | 2000-11-21 | Nec Corporation | Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor |
| US5886865A (en) | 1998-03-17 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for predicting failure of an eletrostatic chuck |
| US6198616B1 (en) * | 1998-04-03 | 2001-03-06 | Applied Materials, Inc. | Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system |
| US6063194A (en) * | 1998-06-10 | 2000-05-16 | Delsys Pharmaceutical Corporation | Dry powder deposition apparatus |
| US6163448A (en) * | 1998-07-31 | 2000-12-19 | Applied Materials, Inc. | Apparatus and method for ex-situ testing of performance parameters on an electrostatic chuck |
| US6325861B1 (en) * | 1998-09-18 | 2001-12-04 | Applied Materials, Inc. | Method for etching and cleaning a substrate |
| US6179921B1 (en) * | 1999-04-19 | 2001-01-30 | Applied Materials, Inc. | Backside gas delivery system for a semiconductor wafer processing system |
| US6430022B2 (en) * | 1999-04-19 | 2002-08-06 | Applied Materials, Inc. | Method and apparatus for controlling chucking force in an electrostatic |
| US6377437B1 (en) * | 1999-12-22 | 2002-04-23 | Lam Research Corporation | High temperature electrostatic chuck |
| TW483037B (en) * | 2000-03-24 | 2002-04-11 | Hitachi Ltd | Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe |
| TW445540B (en) * | 2000-08-07 | 2001-07-11 | Nano Architect Res Corp | Bundle concentrating type multi-chamber plasma reacting system |
| US6595506B1 (en) * | 2000-11-17 | 2003-07-22 | Epion Corporation | Apparatus and method for reduced particulate generation during workpiece handling |
-
2001
- 2001-08-07 US US09/924,038 patent/US6853953B2/en not_active Expired - Lifetime
-
2002
- 2002-08-06 JP JP2002228459A patent/JP4297659B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2003133404A5 (enExample) | ||
| JP4408569B2 (ja) | プラズマ処理室におけるウェハバイアス補償方法及び装置 | |
| JP2003133404A (ja) | 静電チャックの性能を特徴付ける方法 | |
| TW464975B (en) | Method and apparatus for compensating non-uniform wafer processing in plasma processing chamber | |
| JP4828755B2 (ja) | プラズマリアクタシステム、プラズマリアクタに供給する電力を制御する方法およびプラズマ処理システム | |
| KR102515038B1 (ko) | 플라즈마 처리 시스템을 위한 고온 척 | |
| JP4299370B2 (ja) | 双極静電チャックにおけるプラズマバイアス電圧のオフセット方法および装置 | |
| JP5160802B2 (ja) | プラズマ処理装置 | |
| CN102612738B (zh) | 用于检测等离子体处理系统中等离子体约束状态的方法及装置 | |
| US7224568B2 (en) | Plasma processing method and plasma processing apparatus | |
| WO2019239944A1 (ja) | プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法 | |
| KR970003609A (ko) | 플라즈마 처리장치 | |
| JPH06326176A (ja) | 自己バイアス測定方法及び装置並びに静電吸着装置 | |
| JP2008182012A (ja) | プラズマ処理装置用のプロセス性能検査方法及び装置 | |
| JP4169792B2 (ja) | 不平衡二極静電チャック電源供給装置およびその方法 | |
| KR101777253B1 (ko) | 플라즈마 처리 장치 및 플라즈마 처리 방법 | |
| JPH09213778A (ja) | 半導体ウェハ処理装置及び半導体ウェハ処理方法 | |
| JP3635463B2 (ja) | 自己バイアス測定方法及び装置並びに静電吸着装置 | |
| JP2003224112A (ja) | プラズマ処理装置及びプラズマ処理方法 | |
| CN111383895B (zh) | 一种等离子体刻蚀设备及其鞘层电压的测量方法 | |
| US6528949B2 (en) | Apparatus for elimination of plasma lighting inside a gas line in a strong RF field | |
| US20230070679A1 (en) | Apparatus for treating substrates and temperature control method of heating elements | |
| JPH08181118A (ja) | プラズマ処理装置 | |
| JP3698823B2 (ja) | プラズマ電位測定装置及びその測定方法 | |
| JP2004014927A (ja) | 半導体製造装置のシミュレーション装置、及び該シミュレーション装置を備える半導体製造装置 |