JP4297659B2 - 静電チャックの性能を特徴付ける方法 - Google Patents

静電チャックの性能を特徴付ける方法 Download PDF

Info

Publication number
JP4297659B2
JP4297659B2 JP2002228459A JP2002228459A JP4297659B2 JP 4297659 B2 JP4297659 B2 JP 4297659B2 JP 2002228459 A JP2002228459 A JP 2002228459A JP 2002228459 A JP2002228459 A JP 2002228459A JP 4297659 B2 JP4297659 B2 JP 4297659B2
Authority
JP
Japan
Prior art keywords
electrostatic chuck
performance
vacuum chamber
processing system
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002228459A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003133404A5 (enExample
JP2003133404A (ja
Inventor
ブルッカ ジョーゼフ
ジョーンズ ビル
リューシンク ヘリット
ジェイ ロング ジェフリー
オリヴァー ビル
トウィード チャールズ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2003133404A publication Critical patent/JP2003133404A/ja
Publication of JP2003133404A5 publication Critical patent/JP2003133404A5/ja
Application granted granted Critical
Publication of JP4297659B2 publication Critical patent/JP4297659B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2002228459A 2001-08-07 2002-08-06 静電チャックの性能を特徴付ける方法 Expired - Fee Related JP4297659B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US924038 2001-08-07
US09/924,038 US6853953B2 (en) 2001-08-07 2001-08-07 Method for characterizing the performance of an electrostatic chuck

Publications (3)

Publication Number Publication Date
JP2003133404A JP2003133404A (ja) 2003-05-09
JP2003133404A5 JP2003133404A5 (enExample) 2005-10-27
JP4297659B2 true JP4297659B2 (ja) 2009-07-15

Family

ID=25449622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002228459A Expired - Fee Related JP4297659B2 (ja) 2001-08-07 2002-08-06 静電チャックの性能を特徴付ける方法

Country Status (2)

Country Link
US (1) US6853953B2 (enExample)
JP (1) JP4297659B2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140069198A (ko) * 2011-09-30 2014-06-09 어플라이드 머티어리얼스, 인코포레이티드 정전 척
US9870900B2 (en) 2014-07-30 2018-01-16 Samsung Electronics Co., Ltd. Methods and systems for managing semiconductor manufacturing equipment

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10216786C5 (de) * 2002-04-15 2009-10-15 Ers Electronic Gmbh Verfahren und Vorrichtung zur Konditionierung von Halbleiterwafern und/oder Hybriden
TWI275913B (en) * 2003-02-12 2007-03-11 Asml Netherlands Bv Lithographic apparatus and method to detect correct clamping of an object
US7015414B2 (en) * 2003-09-30 2006-03-21 Tokyo Electron Limited Method and apparatus for determining plasma impedance
JP4580283B2 (ja) * 2005-06-14 2010-11-10 信越化学工業株式会社 静電チャックの評価方法
US7802917B2 (en) * 2005-08-05 2010-09-28 Lam Research Corporation Method and apparatus for chuck thermal calibration
US7383141B2 (en) * 2005-11-01 2008-06-03 Varian Semiconductor Equipment Associates, Inc. Faraday system integrity determination
US7633307B2 (en) * 2005-12-16 2009-12-15 Freescale Semiconductor, Inc. Method for determining temperature profile in semiconductor manufacturing test
US20080084650A1 (en) * 2006-10-04 2008-04-10 Applied Materials, Inc. Apparatus and method for substrate clamping in a plasma chamber
JP5003102B2 (ja) * 2006-10-27 2012-08-15 東京エレクトロン株式会社 静電チャックの診断方法、真空処理装置及び記憶媒体
US7582491B2 (en) * 2006-10-27 2009-09-01 Tokyo Electron Limited Method for diagnosing electrostatic chuck, vacuum processing apparatus, and storage medium
US8422193B2 (en) * 2006-12-19 2013-04-16 Axcelis Technologies, Inc. Annulus clamping and backside gas cooled electrostatic chuck
US8022718B2 (en) * 2008-02-29 2011-09-20 Lam Research Corporation Method for inspecting electrostatic chucks with Kelvin probe analysis
US9036326B2 (en) * 2008-04-30 2015-05-19 Axcelis Technologies, Inc. Gas bearing electrostatic chuck
TWI475594B (zh) 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
US8596336B2 (en) * 2008-06-03 2013-12-03 Applied Materials, Inc. Substrate support temperature control
US8143904B2 (en) * 2008-10-10 2012-03-27 Lam Research Corporation System and method for testing an electrostatic chuck
US8291565B2 (en) * 2008-10-10 2012-10-23 Lam Research Corporation Method of refurbishing bipolar electrostatic chuck
US9435029B2 (en) 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9287092B2 (en) * 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9287086B2 (en) 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
SG10201402319QA (en) 2009-05-15 2014-07-30 Entegris Inc Electrostatic chuck with polymer protrusions
DE102009044276A1 (de) 2009-10-16 2011-05-05 Aixtron Ag CVD-Reaktor mit auf einem mehrere Zonen aufweisenden Gaspolster liegenden Substrathalter
JP5960384B2 (ja) * 2009-10-26 2016-08-02 新光電気工業株式会社 静電チャック用基板及び静電チャック
JP5459907B2 (ja) * 2010-01-27 2014-04-02 東京エレクトロン株式会社 基板載置装置の評価装置、及びその評価方法、並びにそれに用いる評価用基板
EP2354769B1 (de) * 2010-02-03 2015-04-01 Micronas GmbH Winkelgeber und Verfahren zur Bestimmung eines Winkels zwischen einer Sensoranordnung und einem Magnetfeld
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
JP6014587B2 (ja) 2010-05-28 2016-10-25 インテグリス・インコーポレーテッド 高表面抵抗率の静電チャック
US9362089B2 (en) 2010-08-29 2016-06-07 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US10069443B2 (en) * 2011-12-20 2018-09-04 Tokyo Electron Limited Dechuck control method and plasma processing apparatus
JP2012138581A (ja) * 2012-01-10 2012-07-19 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
US9368379B2 (en) * 2012-03-14 2016-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods of controlling semiconductor wafer fabrication processes
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US9210790B2 (en) 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
WO2014036000A1 (en) 2012-08-28 2014-03-06 Advanced Energy Industries, Inc. Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel
WO2014149182A1 (en) * 2013-03-15 2014-09-25 Applied Materials, Inc. Methods and apparatus for electrostatic chuck repair and refurbishment
US9601301B2 (en) * 2013-06-25 2017-03-21 Applied Materials, Inc. Non-intrusive measurement of a wafer DC self-bias in semiconductor processing equipment
US9281227B2 (en) * 2013-06-28 2016-03-08 Axcelis Technologies, Inc. Multi-resistivity Johnsen-Rahbek electrostatic clamp
US10460969B2 (en) * 2016-08-22 2019-10-29 Applied Materials, Inc. Bipolar electrostatic chuck and method for using the same
KR102581356B1 (ko) * 2016-08-30 2023-09-21 삼성전자주식회사 기판 처리 장치의 이상 진단 방법 및 이를 수행하기 위한 장치
US10636630B2 (en) * 2017-07-27 2020-04-28 Applied Materials, Inc. Processing chamber and method with thermal control
US10649006B2 (en) 2017-10-06 2020-05-12 Lam Research Corporation Cathode RF asymmetry detection probe for semiconductor RF plasma processing equipment
TWI792598B (zh) 2017-11-17 2023-02-11 新加坡商Aes 全球公司 用於在空間域和時間域上控制基板上的電漿處理之系統和方法,及相關的電腦可讀取媒體
EP3711082B1 (en) 2017-11-17 2025-08-27 AES Global Holdings, Pte. Ltd. Improved application of modulating supplies in a plasma processing system
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
PL3711080T3 (pl) 2017-11-17 2023-12-11 Aes Global Holdings, Pte. Ltd. Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
JP7321768B2 (ja) * 2018-05-23 2023-08-07 信越化学工業株式会社 化学気相成長装置および被膜形成方法
US11054317B2 (en) * 2018-09-28 2021-07-06 Applied Materials, Inc. Method and apparatus for direct measurement of chucking force on an electrostatic chuck
US10546731B1 (en) * 2018-10-05 2020-01-28 Applied Materials, Inc. Method, apparatus and system for wafer dechucking using dynamic voltage sweeping
KR20210090267A (ko) * 2018-12-20 2021-07-19 에이에스엠엘 네델란즈 비.브이. 정전식 클램프를 포함하는 오브젝트 테이블
JP7199279B2 (ja) * 2019-03-26 2023-01-05 東京エレクトロン株式会社 基板処理装置及び載置台の除電方法
KR20220031713A (ko) 2019-07-12 2022-03-11 에이이에스 글로벌 홀딩스 피티이 리미티드 단일 제어식 스위치를 갖는 바이어스 공급부
US11501993B2 (en) * 2019-07-29 2022-11-15 Applied Materials, Inc. Semiconductor substrate supports with improved high temperature chucking
JP6935528B2 (ja) * 2020-03-02 2021-09-15 浜松ホトニクス株式会社 静電チャック装置用電源、静電チャック装置、及びデチャック制御方法
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
CN111968901B (zh) * 2020-08-25 2022-08-16 北京北方华创微电子装备有限公司 半导体反应腔室及半导体加工设备
CN114908334B (zh) * 2021-02-09 2025-10-14 中微半导体设备(上海)股份有限公司 下电极组件、化学气相沉积装置及基片温度控制方法
US11610800B2 (en) 2021-03-22 2023-03-21 Applied Materials, Inc. Capacitive method of detecting wafer chucking and de-chucking
KR102797114B1 (ko) * 2021-07-07 2025-04-18 삼성전자주식회사 기판 처리 장치용 임피던스 측정 지그 및 이를 이용한 기판 처리 장치의 제어 방법
US20230195060A1 (en) * 2021-12-21 2023-06-22 Applied Materials, Inc. Substrate support characterization to build a digital twin
US20230195061A1 (en) * 2021-12-21 2023-06-22 Applied Materials, Inc. Manufacturing equipment parts quality management system
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply
CN117187787A (zh) * 2023-09-04 2023-12-08 拓荆创益(沈阳)半导体设备有限公司 薄膜沉积设备及其控制方法以及存储介质

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1281573B (de) 1964-12-08 1968-10-31 Kalle Ag Messsonde zur Bestimmung der oertlichen Ladungsverteilung auf Oberflaechen von Festkoerpern
US4724393A (en) 1985-11-12 1988-02-09 Murata Manufacturing Co., Ltd. Surface potential detector
US5213349A (en) * 1991-12-18 1993-05-25 Elliott Joe C Electrostatic chuck
US6022458A (en) * 1992-12-07 2000-02-08 Canon Kabushiki Kaisha Method of production of a semiconductor substrate
KR100238629B1 (ko) * 1992-12-17 2000-01-15 히가시 데쓰로 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
US5557215A (en) 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus
US5511799A (en) * 1993-06-07 1996-04-30 Applied Materials, Inc. Sealing device useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential
US5647945A (en) * 1993-08-25 1997-07-15 Tokyo Electron Limited Vacuum processing apparatus
JP2654340B2 (ja) 1993-11-11 1997-09-17 株式会社フロンテック 基板表面電位測定方法及びプラズマ装置
JP3247270B2 (ja) * 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
US5779925A (en) * 1994-10-14 1998-07-14 Fujitsu Limited Plasma processing with less damage
US5576629A (en) 1994-10-24 1996-11-19 Fourth State Technology, Inc. Plasma monitoring and control method and system
US5792562A (en) * 1995-01-12 1998-08-11 Applied Materials, Inc. Electrostatic chuck with polymeric impregnation and method of making
JP3457477B2 (ja) 1995-09-06 2003-10-20 日本碍子株式会社 静電チャック
US5841623A (en) * 1995-12-22 1998-11-24 Lam Research Corporation Chuck for substrate processing and method for depositing a film in a radio frequency biased plasma chemical depositing system
US6095084A (en) * 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US6252354B1 (en) * 1996-11-04 2001-06-26 Applied Materials, Inc. RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control
US5820723A (en) * 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US5948704A (en) * 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US6284093B1 (en) * 1996-11-29 2001-09-04 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US5861086A (en) * 1997-03-10 1999-01-19 Applied Materials, Inc. Method and apparatus for sputter etch conditioning a ceramic body
US5917327A (en) 1997-09-08 1999-06-29 Vlsi Technology, Inc. Technique and apparatus for testing electrostatic chucks
US6149730A (en) * 1997-10-08 2000-11-21 Nec Corporation Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor
US5886865A (en) 1998-03-17 1999-03-23 Applied Materials, Inc. Method and apparatus for predicting failure of an eletrostatic chuck
US6198616B1 (en) * 1998-04-03 2001-03-06 Applied Materials, Inc. Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system
US6063194A (en) * 1998-06-10 2000-05-16 Delsys Pharmaceutical Corporation Dry powder deposition apparatus
US6163448A (en) * 1998-07-31 2000-12-19 Applied Materials, Inc. Apparatus and method for ex-situ testing of performance parameters on an electrostatic chuck
US6325861B1 (en) * 1998-09-18 2001-12-04 Applied Materials, Inc. Method for etching and cleaning a substrate
US6430022B2 (en) * 1999-04-19 2002-08-06 Applied Materials, Inc. Method and apparatus for controlling chucking force in an electrostatic
US6179921B1 (en) * 1999-04-19 2001-01-30 Applied Materials, Inc. Backside gas delivery system for a semiconductor wafer processing system
US6377437B1 (en) * 1999-12-22 2002-04-23 Lam Research Corporation High temperature electrostatic chuck
TW483037B (en) * 2000-03-24 2002-04-11 Hitachi Ltd Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe
TW445540B (en) * 2000-08-07 2001-07-11 Nano Architect Res Corp Bundle concentrating type multi-chamber plasma reacting system
US6595506B1 (en) * 2000-11-17 2003-07-22 Epion Corporation Apparatus and method for reduced particulate generation during workpiece handling

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140069198A (ko) * 2011-09-30 2014-06-09 어플라이드 머티어리얼스, 인코포레이티드 정전 척
KR102110108B1 (ko) * 2011-09-30 2020-05-13 어플라이드 머티어리얼스, 인코포레이티드 정전 척
US9870900B2 (en) 2014-07-30 2018-01-16 Samsung Electronics Co., Ltd. Methods and systems for managing semiconductor manufacturing equipment

Also Published As

Publication number Publication date
US6853953B2 (en) 2005-02-08
JP2003133404A (ja) 2003-05-09
US20030033116A1 (en) 2003-02-13

Similar Documents

Publication Publication Date Title
JP4297659B2 (ja) 静電チャックの性能を特徴付ける方法
TWI618454B (zh) 電漿處理裝置的腔室內構件的溫度控制方法,腔室內構件及基板載置台,以及具備彼之電漿處理裝置
US8823404B2 (en) Evaluation device and evaluation method for substrate mounting apparatus and evaluation substrate used for the same
US9713200B2 (en) System and method for monitoring temperatures of and controlling multiplexed heater array
JP2003133404A5 (enExample)
US5665166A (en) Plasma processing apparatus
JP6067705B2 (ja) 多重ヒータ配列の温度監視及び制御のためのシステムと方法
KR100924849B1 (ko) 정전척의 진단 방법, 진공 처리 장치 및 기억 매체
KR101840231B1 (ko) 플라스마 처리 장치
US12300469B2 (en) Plasma processing apparatus, calculation method, and calculation program
US10375763B2 (en) Temperature control apparatus, temperature control method and recording medium
TWI852931B (zh) 基板處理方法及基板處理裝置
TW201712750A (zh) 電漿處理裝置及基板剝離檢測方法
US20110061811A1 (en) Plasma processing apparatus
TWI863942B (zh) 電漿處理裝置、計算方法及計算程式
US20130001075A1 (en) Sputtering apparatus and sputtering method
JP2002305237A (ja) 半導体製造方法および製造装置
JP2002252276A (ja) 自己バイアス測定方法及び装置並びに静電吸着装置
US20230070679A1 (en) Apparatus for treating substrates and temperature control method of heating elements
JP2004079929A (ja) プラズマリーク監視方法,プラズマ処理装置およびプラズマ処理方法
JPH0567672A (ja) 真空処理装置
JP2006086301A (ja) 静電チャックの評価装置及び静電チャックの評価方法
KR20060100028A (ko) 정전척 모니터링 시스템
JP2004014927A (ja) 半導体製造装置のシミュレーション装置、及び該シミュレーション装置を備える半導体製造装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050803

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050803

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080924

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081222

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090407

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090414

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120424

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120424

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313117

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120424

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120424

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150424

Year of fee payment: 6

LAPS Cancellation because of no payment of annual fees