JP2003124524A - High-flux led array - Google Patents

High-flux led array

Info

Publication number
JP2003124524A
JP2003124524A JP2002295370A JP2002295370A JP2003124524A JP 2003124524 A JP2003124524 A JP 2003124524A JP 2002295370 A JP2002295370 A JP 2002295370A JP 2002295370 A JP2002295370 A JP 2002295370A JP 2003124524 A JP2003124524 A JP 2003124524A
Authority
JP
Japan
Prior art keywords
light emitting
emitting diodes
array
base layer
conductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002295370A
Other languages
Japanese (ja)
Other versions
JP4330863B2 (en
Inventor
Shane Harrah
ハーラー シャーン
Douglas P Woolverton
ピー ウールヴァートン ダグラス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds LLC
Original Assignee
Lumileds LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumileds LLC filed Critical Lumileds LLC
Publication of JP2003124524A publication Critical patent/JP2003124524A/en
Application granted granted Critical
Publication of JP4330863B2 publication Critical patent/JP4330863B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/642Heat extraction or cooling elements characterized by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0201Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203Cooling of mounted components
    • H05K1/0204Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
    • H05K1/0206Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate by printed thermal vias
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/05Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/056Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0302Properties and characteristics in general
    • H05K2201/0305Solder used for other purposes than connections between PCB or components, e.g. for filling vias or for programmable patterns
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007Types of components
    • H05K2201/10106Light emitting diode [LED]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038Through-connections; Vertical interconnect access [VIA] connections

Abstract

PROBLEM TO BE SOLVED: To provide a high-flux LED array which eliminates defects of an LED array by conventional technology. SOLUTION: The light emitting diode array includes a metal base layer, a dielectric layer arranged on the metal base layer, and a plurality of electric conductor trays arranged on the dielectric layer. A plurality of passing parts pass through the dielectric layer. The light emitting diode array further includes a plurality of light emitting diodes, which are arranged on corresponding passing parts among the passing parts and include 1st and 2nd electric contacts which are so electrically connected as to separate the electric conductive traces respectively. The respective passing parts include heat-conductive materials which are in thermal contact with the metal base layer and also in thermal contact with the corresponding light emitting diodes.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、発光ダイオードに
関し、より詳細には、発光ダイオードのアレイ(arra
y)に関する。
FIELD OF THE INVENTION This invention relates to light emitting diodes, and more particularly to an array of light emitting diodes.
y) concerning.

【0002】[0002]

【従来の技術】発光ダイオード(LED)のアレイは、
街灯、交通信号および液晶ディスプレイのバックライト
のような様々な高束(high flux)(光学的エネルギ/
単位時間)アプリケーションにおいて用いられうる。こ
のようなアプリケーションでは、LEDアレイの単位面
積あたりに供給される束(flux)を増加させることが有
利である。このように単位面積あたりの束を増加させる
ことは、原則として、アレイにおけるLED間の間隔を
減少させる(よって、アレイにおける単位面積あたりの
LEDの数を増加させる)ことにより、および/また
は、個々のLEDにより供給される束を増加させること
により、実現される。
2. Description of the Prior Art Arrays of light emitting diodes (LEDs) are
Various high fluxes (optical energy / optical energy / lights, such as street lights, traffic lights and LCD backlights).
Unit time) can be used in applications. In such applications, it is advantageous to increase the flux delivered per unit area of the LED array. Increasing the flux per unit area in this way is, in principle, by decreasing the spacing between LEDs in the array (and thus increasing the number of LEDs per unit area in the array) and / or individually. This is achieved by increasing the flux supplied by the LEDs of the.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、LED
アレイの単位面積あたりの束を増加させるいずれの手法
も、典型的には、LEDの性能を著しく劣化させること
を防止するためにアレイの単位面積あたりに消散させな
くてはならない熱の量を増加させる。
However, the LED
Any technique that increases the flux per unit area of the array typically increases the amount of heat that must be dissipated per unit area of the array to prevent significantly degrading the performance of the LED. Let

【0004】1つの従来タイプのLEDアレイはLED
ランプを含んでおり、このLEDランプのそれぞれは、
成型または鋳造されたプラスチックのボディ(body)内
の金属性リードフレーム(leadframe)に取り付けられ
たダイを備える。各ランプの2つの金属製リードは、典
型的には、従来のデザインの共通のプリント回路基板に
おける伝導性トレースに半田付けされる。ランプのプラ
スチックボディおよび金属製リードが占めるスペース
は、アレイにおけるランプの実装密度を制限する。加え
て、このようなランプは、典型的には多くの熱を消散さ
せることができない。なぜならば、ランプで発生した熱
は、主にリードおよび伝導性トレースによって消散する
からである。この結果、高束を発生させるべく高電流を
用いてランプを駆動することができない。
One conventional type of LED array is an LED
Each of these LED lamps includes a lamp
It comprises a die attached to a metallic leadframe within a molded or cast plastic body. The two metal leads of each lamp are typically soldered to conductive traces on a common printed circuit board of conventional design. The space occupied by the lamp's plastic body and metal leads limits the packing density of the lamps in the array. In addition, such lamps typically cannot dissipate much heat. This is because the heat generated by the lamp is dissipated primarily by the leads and conductive traces. As a result, it is not possible to drive the lamp with high current to produce a high flux.

【0005】別の従来タイプのLEDアレイでは、LE
Dダイは、銀を充填したエポキシ(silver filled epox
y)を用いて、従来のプリント回路基板の表面に取り付
けられる。典型的には、LEDダイは、どれだけ近接さ
せてダイの間に間隔をおくかを制限するワイヤボンドを
用いて、プリント回路基板における伝導性トレースに電
気的に接続される。加えて、ダイを取り付ける従来のプ
リント回路基板は、典型的には、LEDダイにより発生
した熱を拡散する際には、効果的ではない。これによ
り、LEDダイの最大動作電流、ひいては、個々のLE
Dダイにより得られる最大束(maximum flux)が制限さ
れる。
Another conventional type of LED array is LE
The D die is a silver filled epoxy.
y) is attached to the surface of a conventional printed circuit board. Typically, LED dies are electrically connected to conductive traces on a printed circuit board using wire bonds that limit how closely they are spaced between the dies. In addition, conventional printed circuit boards on which the die is mounted are typically not effective at spreading the heat generated by the LED die. This allows the maximum operating current of the LED die, and thus the individual LE
The maximum flux obtained by the D-die is limited.

【0006】従来技術にかかるLEDアレイの欠点を解
消する高束のLEDアレイが必要とされている。
There is a need for a high flux LED array that overcomes the shortcomings of prior art LED arrays.

【0007】[0007]

【課題を解決するための手段】本発明にかかるLEDア
レイは、金属基層と、該金属基層の上に配置された誘電
体層と、該誘電体層の上に配置された複数の電気伝導性
トレースと、を含む。複数の通過部は、該誘電体層を通
過する。LEDアレイはまた複数のLEDを含み、該複
数のLEDのそれぞれは、前記通過部のうちの対応する
通過部の上に配置され、かつ、前記電気伝導性トレース
のそれぞれを分離するように電気的に接続された第1の
電気コンタクトおよび第2の電気コンタクトを含む。前
記通過部のそれぞれは、前記金属基層に熱接触しかつ前
記対応するLEDに熱接触する熱伝導性材料を含む。熱
伝導性材料は、例えば半田材料を含む。
An LED array according to the present invention includes a metal base layer, a dielectric layer disposed on the metal base layer, and a plurality of electrically conductive layers disposed on the dielectric layer. Including traces and. The plurality of passing portions pass through the dielectric layer. The LED array also includes a plurality of LEDs, each of the plurality of LEDs being disposed on a corresponding one of the passages and electrically separating each of the electrically conductive traces. A first electrical contact and a second electrical contact connected to. Each of the passages includes a thermally conductive material in thermal contact with the metal base layer and in thermal contact with the corresponding LED. The heat conductive material includes, for example, a solder material.

【0008】いくつかの実施の形態では、1つの通過部
における熱伝導性材料は、前記金属基層に直接物理的に
接触し、前記対応するLEDに直接物理的に接触し、ま
たは、前記金属基層および前記LEDに直接物理的に接
触する。このような直接物理的な接触は、十分なもので
あるが熱接触を確立するのに必須なものではない。
In some embodiments, the thermally conductive material in one passage is in direct physical contact with the metal substrate, in direct physical contact with the corresponding LED, or with the metal substrate. And in direct physical contact with the LED. Such direct physical contact, although sufficient, is not essential for establishing thermal contact.

【0009】通過部における熱伝導性材料は、前記通過
部の上に配置されたLEDから前記金属基層にまで熱が
流れるための熱抵抗の低いパスを効果的に付与する。こ
れにより、熱を効率的に導いて逃すことができる。この
結果、本発明にかかるアレイにおけるLEDを、より高
い電流で動作させることができるとともに、LEDの性
能を低下させるようなレベルにまでLEDの温度を上昇
させることなく従来方式に比べてより近接させた間隔を
おいて配置することができる。よって、本発明にかかる
LEDアレイは、従来のLEDアレイにより得られるも
のよりも、単位面積あたりより大きな束を与える。
The heat conductive material in the passage portion effectively provides a low thermal resistance path for heat to flow from the LED arranged on the passage portion to the metal base layer. This allows the heat to be efficiently conducted and escaped. As a result, the LEDs in the array according to the present invention can be operated at a higher current, and the LEDs can be made closer to each other than the conventional method without raising the temperature of the LEDs to a level that deteriorates the performance of the LEDs. Can be spaced apart. Thus, the LED array according to the present invention provides a larger bundle per unit area than that obtained with conventional LED arrays.

【0010】いくつかの実施の形態では、サブマウント
は、LEDと前記対応する通過部との間に配置され、か
つ、前記通過部における前記熱伝導性材料と直接物理的
に接触する。このようなサブマウントを用いることによ
り、さらなる回路を組み込むことが可能となり、かつ、
アレイに搭載する前にLEDを試験することが可能とな
る。
In some embodiments, the submount is located between the LED and the corresponding passage and is in direct physical contact with the thermally conductive material in the passage. By using such a submount, it becomes possible to incorporate further circuits, and
It is possible to test the LEDs before mounting them in the array.

【0011】[0011]

【発明の実施の形態】添付図面における寸法が必ずしも
共通の尺度を有しているとは限らないということに留意
されたい。様々な図面における同様の参照番号は、様々
な実施の形態における同様の部分を示す。
It should be noted that the dimensions in the attached figures do not necessarily have to a common scale. Like reference numbers in the various drawings indicate like parts in the various embodiments.

【0012】本発明の1つの実施の形態(図1)では、
LEDアレイ2は、複数のLED(例えばLED4)と
金属製基層6とを含む。従来の伝導性電気トレースの層
8については、金属製基層6の上に位置する誘電体層1
0の上に付与する。複数の通過部(例えば通過部[via]
12)は、トレース層8および誘電体層10を通過して
金属製基層6の上または金属製基層6において終わる。
LEDのそれぞれは、対応する通過部の上に配置され
る。
In one embodiment of the invention (FIG. 1),
The LED array 2 includes a plurality of LEDs (for example, LEDs 4) and a metal base layer 6. For a conventional conductive electrical trace layer 8, a dielectric layer 1 overlying a metallic base layer 6 is used.
Append on top of 0. Multiple transit parts (eg transit part [via]
12) passes through the trace layer 8 and the dielectric layer 10 and ends on or at the metallic base layer 6.
Each of the LEDs is arranged on the corresponding passage.

【0013】LED4については、適当な従来の発光ダ
イオードとすることができる。例えば、LED4を米国
特許第6,133,589号に開示されたAlInGaN
-LEDまたは米国特許出願第09/469,657号に
開示されたAlInGaN-LEDとすることができ
る。これら両方は、本発明の譲受人に譲渡されており、
これら全体は、引用により本明細書に含められる。いく
つかの実施例では、LED4は、例えば約70ミリアン
ペア(mA)より大きな電流により駆動される高束のA
lInGaNまたはAlInGaP-LEDである。こ
のような高束LEDについては、例えば、LumiLeds Lig
hting U.S., LLC of San Jose, Californiaより購入す
ることができる。
The LED 4 can be any suitable conventional light emitting diode. For example, the LED 4 may be the AlInGaN disclosed in US Pat. No. 6,133,589.
-LED or AlInGaN-LED disclosed in US patent application Ser. No. 09 / 469,657. Both of these are assigned to the assignee of the present invention,
All of which are incorporated herein by reference. In some embodiments, LED 4 may be a high flux A driven by a current greater than, for example, about 70 milliamps (mA).
lInGaN or AlInGaP-LED. For such high-bundle LEDs, for example, LumiLeds Lig
Available from hting US, LLC of San Jose, California.

【0014】LED4は、従来のNコンタクト14およ
び従来のPコンタクトを含む。図1に示す実施の形態で
は、LED4は、LEDダイにおける同一の面に配置さ
れかつトレース層8に対向するように志向させたN型コ
ンタクト14およびPコンタクト16を有する「フリッ
プチップ」として搭載されている。Nコンタクト14お
よびPコンタクト16は、トレース層8における伝導性
トレースを分離するように、リフローイングした(refl
owed)半田を用いて、電気的に接続される。LED4
は、また、コンタクト14および16のようにLED4
の同一の面に配置した熱コンタクト20(例えば金属製
パッド)を含む。いくつかの実施例では、熱コンタクト
20は、コンタクト14および16から電気的に絶縁さ
れる。このような電気的な絶縁については、例えば選択
的に設けられる誘電体層22により与えられる。熱コン
タクト20をコンタクト14および16から電気的に絶
縁するその他の手段を用いることも可能である。電気的
コンタクト14および16ならびに熱コンタクト20に
ついては、例えば適切な従来の半田付け可能な(solder
able)金属層により、従来の方法で形成することが可能
である。
LED 4 includes a conventional N contact 14 and a conventional P contact. In the embodiment shown in FIG. 1, the LED 4 is mounted as a “flip chip” with the N-type contact 14 and the P-contact 16 arranged on the same side of the LED die and oriented to face the trace layer 8. ing. N-contact 14 and P-contact 16 are reflowed to separate the conductive traces in trace layer 8.
owed) Soldered and electrically connected. LED4
Also contacts the LED 4 like contacts 14 and 16.
Of thermal contacts 20 (eg, metal pads) located on the same side of the. In some embodiments, thermal contact 20 is electrically isolated from contacts 14 and 16. Such electrical insulation is provided by, for example, the selectively provided dielectric layer 22. Other means of electrically insulating the thermal contact 20 from the contacts 14 and 16 may be used. For electrical contacts 14 and 16 and thermal contact 20, for example, suitable conventional solderable (solder)
The metal layer can be formed by a conventional method.

【0015】通過部12は、金属基層6に熱接触しかつ
LED4に熱接触する熱伝導材料24を含む。熱伝導材
料24は、例えば液体または気体が充填される間隙(li
guidor gas filled gap)によって途切れることのな
い、LED4と金属製基層6との間における連続的な固
体材料の熱流路(solid material heat flow path)の
部分を形成する。図1に示す実施の形態では、熱伝導材
料24は、LED4の熱コンタクト20と直接接触し、
かつ、金属製基層6と直接接触している。しかしなが
ら、他の実施の形態では、熱伝導材料24とLED4ま
たは金属製基層6との間にこのような直接的かつ物理的
なコンタクトを用いなくとも、熱コンタクトを確立する
ことができる。
The passage portion 12 includes a heat conductive material 24 that is in thermal contact with the metal base layer 6 and is in thermal contact with the LED 4. The heat-conducting material 24 is, for example, a gap (li
It forms part of a continuous solid material heat flow path between the LED 4 and the metallic base layer 6, which is uninterrupted by the guidance gas filled gap. In the embodiment shown in FIG. 1, the thermally conductive material 24 is in direct contact with the thermal contact 20 of the LED 4,
Moreover, it is in direct contact with the metal base layer 6. However, in other embodiments, a thermal contact may be established between the heat-conducting material 24 and the LED 4 or metallic base layer 6 without such direct and physical contact.

【0016】いくつかの実施例では、熱伝導材料24
は、例えばスクリーン印刷(screen printing)のよう
な従来の方法によって通過部12に付与した従来のリフ
ローイングした半田であり、または、この半田を含む。
このような実施例では、熱伝導材料24については、リ
フローイングした半田18として用いられるものと同一
の材料とすることができ、伝導材料24および半田18
については、同一の処理工程により付与することがで
き、同一の処理工程によりリフローイングすることがで
きる。他の実施例では、熱伝導材料24は、ダイアモン
ドを充填したエポキシ(diamond filled epoxy)、銀を
充填したエポキシ(silver filled eposy)、または、
高い粘着力(adhesion strength)および良好な熱伝導
性を有するその他の従来の材料を含むことができる。い
くつかの実施例では、熱伝導材料24は、従来の方法に
より通過部12の中にめっきした金属を含む。このよう
なめっきした金属は、通過部12を例えばほぼトレース
層8のレベルにまで充填する。従来の方法によりリフロ
ーイングした半田については、通過部12におけるこの
ようなめっきした金属の上に付与することができる。熱
伝導材料24が電気的に伝導性を有していれば、この熱
伝導材料は、誘電体層10および選択的に設けられる誘
電体層22によりトレース層8およびLED4から電気
的に絶縁されうる。熱伝導材料24がリフローイング可
能な半田材料であれば、金属基層6と熱コンタクト20
との間の熱伝導材料24の厚さは、例えば、約0.00
02インチから約0.005インチ、典型的には約0.0
01インチである。
In some embodiments, the thermally conductive material 24
Is or includes conventional reflowed solder applied to the passage 12 by conventional methods such as screen printing.
In such an embodiment, the thermally conductive material 24 may be the same material used as the reflowed solder 18, and the conductive material 24 and the solder 18 may be used.
Can be applied by the same processing step, and can be reflowed by the same processing step. In other embodiments, the thermally conductive material 24 is a diamond filled epoxy, a silver filled epoxy, or
Other conventional materials with high adhesion strength and good thermal conductivity can be included. In some embodiments, the thermally conductive material 24 comprises metal plated into the passage 12 by conventional methods. Such a plated metal fills the passage 12 to, for example, approximately the level of the trace layer 8. Solder reflowed by conventional methods can be applied over such plated metal in passage 12. If the heat conducting material 24 is electrically conductive, this heat conducting material may be electrically isolated from the trace layer 8 and the LED 4 by the dielectric layer 10 and the optionally provided dielectric layer 22. . If the heat conductive material 24 is a reflowable solder material, the metal base layer 6 and the thermal contact 20 are
The thickness of the heat-conducting material 24 between and is, for example, about 0.00
02 inches to about 0.005 inches, typically about 0.0
It is 01 inches.

【0017】金属基層6は、例えば、熱伝導材料24に
対する良好な機械的および熱的なコンタクトを得るべ
く、ニッケルまたはスズのような半田付け可能な材料を
用いて選択的にめっきされた、約0.01インチを上回
る厚さを有する銅の板(copperplate)である。
The metal base layer 6 is selectively plated with a solderable material such as nickel or tin to obtain good mechanical and thermal contact to the thermally conductive material 24, for example. A copper plate having a thickness greater than 0.01 inch.

【0018】金属基層6については、他の金属からまた
は金属を組み合わせたものから形成することも可能であ
り、2つ以上の金属層を含むことができる。
The metal base layer 6 can be formed from another metal or a combination of metals, and can include two or more metal layers.

【0019】1つの実施例では、トレース層8は、誘電
体層10を形成するエポキシのような従来の誘電体接着
剤を用いて金属基層6に取り付けた、エッチングおよび
めっきが施された銅のシートから形成される。通過部
(例えば通過部12)については、例えば、従来の機械
工具、プラズマもしくは化学エッチング、または、レー
ザーアブレーション(laser ablation)を用いて、トレ
ース層8および誘電体層10に形成することができる。
In one embodiment, the trace layer 8 is of etched and plated copper that is attached to the metal base layer 6 using a conventional dielectric adhesive such as epoxy that forms the dielectric layer 10. Formed from sheets. Passages (eg, passages 12) can be formed in trace layer 8 and dielectric layer 10 using, for example, conventional mechanical tools, plasma or chemical etching, or laser ablation.

【0020】LEDアレイ2は、LEDにより発せられ
た光を収集しかつ導くために、このLEDのいくらかま
たは全部の上に配置したレンズ(例えばレンズ26)を
含むこともできる。このようなレンズについては、LE
Dのいくらかまたは全部の上における透き通ったプラス
チックまたはエラストマー(elastomer)の中に従来の
方法により成型または鋳造することができる。これに代
えて、少量のシリコーンまたは同様の透き通った材料
を、LEDのいくらかまたは全部の上に従来の方法によ
り施した後、簡単なレンズを形成するように硬化させる
ことができ、または、中空の透き通ったレンズを、LE
Dのいくらかまたは全部の上に、従来の方法により、熱
ステーク(heat stake)し、にかわ付け(glue)しまた
は圧入した後、例えばLEDをカプセル化するべくシリ
コーンにより充填することができる。
The LED array 2 may also include a lens (eg, lens 26) disposed over some or all of the LEDs to collect and direct the light emitted by the LEDs. For such lenses, see LE
It can be cast or cast by conventional methods into a clear plastic or elastomer over some or all of D. Alternatively, a small amount of silicone or similar clear material can be applied over some or all of the LEDs by conventional methods and then cured to form a simple lens, or hollow Clear lens, LE
It can be heat staked, glued or pressed onto some or all of D by conventional methods and then filled with silicone, for example to encapsulate the LED.

【0021】熱コンタクト20および熱伝導材料24
は、熱がLED4から金属基層6に流れるための、効果
的に熱抵抗の低いパスを設けることができ、これによ
り、熱を効果的に発散させることができる。このパスの
熱抵抗は、例えば従来のプリント回路基板の上に形成さ
れた従来のLEDアレイにおける熱パスの熱抵抗より小
さい。このように熱パスの抵抗が低いことによって、ア
レイ2におけるLEDは、性能を劣化させるレベルにま
で温度を上げることなく、従来の電流より高い電流で動
作すること(ひいては従来の束より高い束をもたらすこ
と)ができる。熱伝導材料24および金属基層6によっ
て熱が効果的に散逸することにより、LEDをオーバー
ヒートさせることなくかつLEDの性能を劣化させるこ
となく、LED間に従来の高束のLEDのアレイにおけ
るもの少ない間隔を設けて、高束のLEDをLEDアレ
イ2に配置することができる。LEDアレイ2における
各LEDについて、分離した成型ハウジング、リードフ
レーム、および、トレース層8の伝導性トレースに対す
るワイヤボンドがないので、より近接させてLEDの間
に間隔を設けることができる。この結果、LEDアレイ
2は、従来のLEDアレイにおけるものよりも、単位面
積あたりの束を大きくすることができる。ワイヤボンド
も除去していることにより、本実施の形態におけるLE
Dアレイ2の信頼性を向上させることができる。なぜな
らば、ワイヤボンドは、典型的には、LEDアレイにお
ける最も信頼性の低い構成要素だからである。
Thermal contact 20 and thermally conductive material 24
Can effectively provide a path with low thermal resistance for the heat to flow from the LED 4 to the metal base layer 6 and thus can effectively dissipate the heat. The thermal resistance of this path is less than the thermal resistance of the thermal path in a conventional LED array formed on a conventional printed circuit board, for example. This low resistance in the thermal path allows the LEDs in array 2 to operate at higher currents than conventional (and thus higher than conventional flux) without raising the temperature to a level that degrades performance. Can bring). Effective dissipation of heat by the heat-conducting material 24 and the metal base layer 6 allows for less spacing between LEDs than in conventional high-bundle LED arrays without overheating the LEDs and degrading their performance. Can be provided to arrange a high bundle of LEDs in the LED array 2. For each LED in the LED array 2, there is no separate molded housing, lead frame, and wire bonds to the conductive traces of the trace layer 8, thus allowing closer spacing between the LEDs. As a result, the LED array 2 can have a larger bundle per unit area than that in the conventional LED array. Since the wire bond is also removed, the LE in the present embodiment
The reliability of the D array 2 can be improved. Because wire bonds are typically the least reliable component in LED arrays.

【0022】本発明の第2の実施の形態(図2)では、
LEDアレイ2(例えばLED28)におけるLEDの
それぞれは、別々のサブマウント(例えばサブマウント
30)に取り付けられる。このサブマウントについて
は、例えば珪素またはセラミック材料により形成するこ
とができる。従来のリフローイングした半田(例えばS
n/Pb)バンプ32は、LED28のN型領域をサブ
マウント30における上部Nコンタクト34に電気的に
接続し、LED28のP型領域をサブマウント30にお
ける上部Pコンタクト36に電気的に接続する。サブマ
ウント30における通過部38(40)は、上部Nコン
タクト34(上部Pコンタクト36)から下部Nコンタ
クト42(下部Pコンタクト44)に電流を運ぶ従来の
電気的に伝導性を有する材料を含む。Nコンタクト42
およびPコンタクト44は、従来のリフローイングした
半田18を用いてトレース層8における各トレースを分
離するように電気的に接続される。サブマウント30が
珪素のような伝導性材料より形成されるのであれば、通
過部38および40は、サブマウントを貫通する通過部
の短絡を防止すべく従来の方法により付与した誘電体管
またはライナー(liner)を含むことができる。
In the second embodiment of the present invention (FIG. 2),
Each of the LEDs in the LED array 2 (eg, LED 28) is mounted on a separate submount (eg, submount 30). The submount can be made of, for example, silicon or a ceramic material. Conventional reflowed solder (eg S
The n / Pb) bump 32 electrically connects the N-type region of the LED 28 to the upper N contact 34 of the submount 30, and electrically connects the P-type region of the LED 28 to the upper P contact 36 of the submount 30. Passage 38 (40) in submount 30 comprises a conventional electrically conductive material that carries current from top N contact 34 (top P contact 36) to bottom N contact 42 (bottom P contact 44). N contact 42
And P-contacts 44 are electrically connected to separate each trace in trace layer 8 using conventional reflowed solder 18. If the submount 30 is formed of a conductive material such as silicon, then the passages 38 and 40 are dielectric tubes or liners provided in a conventional manner to prevent shorting of the passages through the submount. (Liner) can be included.

【0023】サブマウント30は、また、電気的コンタ
クト42および44に隣接するサブマウント30の裏面
に付与した熱コンタクト46(例えば金属パッド)を含
む。いくつかの実施例では、熱コンタクト46は、コン
タクト42および44から電気的に絶縁される。熱コン
タクト46をコンタクト42および44から電気的に絶
縁する他の手段を用いることも可能である。電気コンタ
クト34、36、42および44ならびに熱コンタクト
46については、例えば、適当な従来の半田付け可能な
金属層により形成することができる。
Submount 30 also includes thermal contacts 46 (eg, metal pads) applied to the backside of submount 30 adjacent electrical contacts 42 and 44. In some embodiments, thermal contact 46 is electrically isolated from contacts 42 and 44. Other means of electrically insulating the thermal contacts 46 from the contacts 42 and 44 may be used. The electrical contacts 34, 36, 42 and 44 and the thermal contact 46 can be formed, for example, by any suitable conventional solderable metal layer.

【0024】この実施の形態では、通過部12における
熱伝導材料24は、サブマウント30における熱コンタ
クト46に直接接触し、かつ、サブマウント30および
半田バンプ32を介してLED28に熱接触している。
いくつかの実施例では、熱伝導材料24に用いられるリ
フローイングした半田は、半田バンプ32に用いられる
リフローイングした半田よりも低いリフロー温度を有す
るので、これにより、サブマウント30をLED28と
サブマウント30との間の半田接続を妨げることなく金
属基層6に取り付けることができる。典型的には、LE
D28から金属基層6への熱の流れに対する、サブマウ
ント30により付与される熱抵抗を低減するために、サ
ブマウント30は、薄く熱伝導材料により形成される。
例えば、珪素により形成されたサブマウントは、典型的
には、約0.010インチ未満の厚さを有する。
In this embodiment, the heat conducting material 24 in the passage portion 12 is in direct contact with the thermal contact 46 in the submount 30, and is in thermal contact with the LED 28 via the submount 30 and the solder bumps 32. .
In some embodiments, the reflowed solder used for the thermally conductive material 24 has a lower reflow temperature than the reflowed solder used for the solder bumps 32, which allows the submount 30 to be mounted on the LED 28 and the submount 30. It can be attached to the metal base layer 6 without interfering with the solder connection with 30. Typically LE
In order to reduce the thermal resistance imparted by the submount 30 to the heat flow from D28 to the metal base layer 6, the submount 30 is made of a thin heat conductive material.
For example, submounts formed of silicon typically have a thickness of less than about 0.010 inches.

【0025】半田バンプ32、サブマウント30、熱コ
ンタクト46および熱伝導材料24を組み合わせること
により、熱がLED28から金属基層6へ流れるための
熱抵抗の低いパスが設けられる。このように熱抵抗が低
いことにより、上述した実施の形態におけるものと同様
の効果が得られる。加えて、サブマウントに搭載される
LEDについては、LEDアレイ2に設ける前に予備試
験を行うことができる。このような予備試験により、L
EDアレイ2におけるLEDを、例えば発光波長および
束についての十分に特性を表した値に基づいて選択する
ことができる。また、サブマウントは、例えばLEDア
レイ2に効果的となりうる静電放電保護回路(electros
tatic discharge protection circuitry)のような回路
を別途含むことができる。
The combination of solder bump 32, submount 30, thermal contact 46 and thermally conductive material 24 provides a low thermal resistance path for heat to flow from LED 28 to metal substrate 6. Since the thermal resistance is low as described above, the same effect as that in the above-described embodiment can be obtained. In addition, the LEDs mounted on the submount can be subjected to a preliminary test before being mounted on the LED array 2. By such a preliminary test, L
The LEDs in the ED array 2 can be selected, for example, based on well characterized values for emission wavelength and flux. In addition, the submount is an electrostatic discharge protection circuit (electros
Circuits such as tatic discharge protection circuitry can be included separately.

【0026】本発明の第3の実施の形態(図3)では、
通過部38および40は存在せず、サブマウント30に
おけるNコンタクト34およびPコンタクト36は、そ
れぞれ、ワイヤボンド48および50によりトレース層
8におけるトレースを分離するように電気的に接続され
る。ワイヤボンド48および50は、通過部を通過する
電気的接続を形成するのにより安価なものである。
In the third embodiment of the present invention (FIG. 3),
There are no passages 38 and 40, and N contact 34 and P contact 36 in submount 30 are electrically connected to separate the traces in trace layer 8 by wire bonds 48 and 50, respectively. Wirebonds 48 and 50 are less expensive to make electrical connections through the transits.

【0027】本発明の第4の実施の形態(図4)では、
トレース層8および誘電体層は、薄い従来のプリント回
路基盤、または、従来の誘電体接着層54を有する金属
基層6に取り付けられたフレックス回路(flex circui
t)52に含まれる。さらなる誘電体層56は、トレー
ス層8の上に位置しうる。通過部については、例えばパ
ンチングによりプリント回路基盤52に形成することが
できる。
In the fourth embodiment of the present invention (FIG. 4),
The trace layer 8 and the dielectric layer may be a thin conventional printed circuit board or a flex circuit attached to a metal substrate 6 having a conventional dielectric adhesive layer 54.
t) 52. A further dielectric layer 56 may be located on top of the trace layer 8. The passage portion can be formed on the printed circuit board 52 by punching, for example.

【0028】図5は、本発明の1つの実施の形態にかか
るLEDアレイに含まれるLEDアセンブリ58の底面
における電気コンタクトおよび熱コンタクトの配置の概
略を示す。LEDアセンブリ58は、例えば、LED4
(図1)のようなサブマウントを除くLED、または、
サブマウント30(図2〜図4)に取り付けられたLE
D28のようなサブマウントに取り付けられたLEDを
含むことができる。Nコンタクト60は、例えば、LE
D4におけるNコンタクト14、または、サブマウント
30における下部Nコンタクト42を含むことができ
る。Pコンタクト62は、例えば、LED4におけるP
コンタクト16、または、サブマウント30における下
部Pコンタクト44を含むことができる。熱コンタクト
64は、例えば、LED4における熱コンタクト20、
または、サブマウント30における熱コンタクト46を
含むことができる。熱コンタクト64は、典型的には、
熱コンタクト64を通る金属基層6への熱の流れを促進
するために、LEDアセンブリ58の底面の大部分を占
める。
FIG. 5 schematically illustrates the placement of electrical and thermal contacts on the bottom surface of an LED assembly 58 included in an LED array according to one embodiment of the present invention. The LED assembly 58 is, for example, the LED 4
LED excluding submount such as (Fig. 1), or
LE mounted on the submount 30 (FIGS. 2 to 4)
It may include an LED mounted on a submount such as D28. The N contact 60 is, for example, LE.
It may include the N contact 14 at D4 or the lower N contact 42 at the submount 30. The P contact 62 is, for example, P in the LED 4.
The contact 16 or the lower P contact 44 in the submount 30 may be included. The thermal contact 64 is, for example, the thermal contact 20 in the LED 4,
Alternatively, thermal contacts 46 on submount 30 may be included. The thermal contacts 64 are typically
It occupies most of the bottom surface of the LED assembly 58 to facilitate heat flow to the metal substrate 6 through the thermal contacts 64.

【0029】図6は、複数の場所66−1〜66−9に
LEDアセンブリ(サブマウントを有したまたは有しな
いLED)を設ける前に、本発明の1つの実施の形態に
かかるLEDアレイ2を模式的に示す上面図である。各
場所において、通過部(例えば通過部12)は、金属基
層6の一部を露出している。また、LEDアセンブリ5
8(図5)における電気コンタクト60および62のよ
うなLEDアセンブリの底面における電気コンタクトの
それぞれと電気的に接触するために、各場所において、
伝導性トレース8−1〜8−18(トレース層8におけ
る)のうちの2つが露出している。伝導性電気トレース
8−1〜8−18については、いくつかのまたはすべて
のLEDを直列、並列または逆並列(anti-parallel)
に配置するように、相互接続することができる。通し穴
(through-hole)68のような通し穴は、レンズ26
(図1)のようなレンズを例えばシリコーンのようなカ
プセル材料(encapsulant)を用いて充填することがで
きるように、金属基層6ならびに金属基層6の上に位置
する誘電体層およびトレース層を貫通する。
FIG. 6 shows the LED array 2 according to one embodiment of the present invention before mounting the LED assemblies (LEDs with or without submounts) at a plurality of locations 66-1 to 66-9. It is a top view which shows typically. In each place, the passage portion (for example, the passage portion 12) exposes a part of the metal base layer 6. Also, the LED assembly 5
8 (FIG. 5) at each location to make electrical contact with each of the electrical contacts on the bottom surface of the LED assembly, such as electrical contacts 60 and 62.
Two of the conductive traces 8-1 to 8-18 (on the trace layer 8) are exposed. For the conductive electrical traces 8-1 to 8-18, some or all LEDs are connected in series, parallel or anti-parallel.
Can be interconnected to be placed in. Through holes, such as through-hole 68, are
Penetrate the metal base layer 6 and the dielectric and trace layers located above the metal base layer 6 so that a lens such as (FIG. 1) can be filled with an encapsulant such as silicone. To do.

【0030】図7は、LEDアセンブリ58−1〜58
−9を金属基層6および伝導性トレース8−1〜8−1
6に取り付けた後の、図6におけるLEDアレイ2を模
式的に示す上面図である。各LEDアセンブリは、LE
Dアセンブリの下に配置された通過部に付与した熱伝導
性材料24(図1〜図4)によって金属基層6と熱接触
する。この実施の形態では、LEDアレイ2は、9つの
LEDアセンブリ(サブマウントを有したまたは有しな
いLED)を含む。そのほかの実施の形態は、9つより
多いかまたは少ないこのようなLEDアセンブリを含
む。
FIG. 7 shows LED assemblies 58-1 to 58.
-9 to metal base layer 6 and conductive traces 8-1 to 8-1
7 is a top view schematically showing the LED array 2 in FIG. 6 after being attached to FIG. Each LED assembly is LE
Thermally conductive material 24 (FIGS. 1 to 4) applied to the passage located under the D assembly makes thermal contact with the metal base layer 6. In this embodiment, the LED array 2 includes nine LED assemblies (LEDs with or without submounts). Other embodiments include more or less than nine such LED assemblies.

【0031】特定の実施の形態を用いて本発明を説明し
てきたが、本発明は、別記した請求項の範囲内に含まれ
るすべての変形および変更を含むように意図したもので
ある。例えば、図1〜図4に示したLED4および28
はフリップチップであるが、本発明は、上面に1つ以上
の電気コンタクトを有するLEDを用いることが可能で
ある。このようなコンタクトについては、例えばサブマ
ウントにおける電気コンタクトに対して、または、金属
基層の上に位置するトレース層における伝導性トレース
に対して、ワイヤボンドすることができる。加えて、図
2〜図4は、核サブマウントに取り付けられる1つのL
EDのみを示すが、いくつかの実施の形態は、サブマウ
ントごとに1つ以上のLEDを用いることが可能であ
る。このような実施の形態では、1つのサブマウントに
おける多数のLEDのうちのいくつかまたはすべてを、
例えば直列、並列または逆並列に電気的に接続すること
ができる。さらには、本発明にかかるLEDアレイは、
サブマウントに付与したいくつかのLED、および、金
属基層に直接取り付けたいくつかのLEDを含むことが
できる。図1〜図4は、金属基層6の上に配置した伝導
性トレースの1つの層8のみを示しているが、他の実施
の形態は、伝導性トレースの多数の層を用いることがで
きる。
While the invention has been described with particular embodiments, it is intended that the invention cover all modifications and alterations that fall within the scope of the appended claims. For example, the LEDs 4 and 28 shown in FIGS.
Although it is a flip chip, the present invention can use LEDs with one or more electrical contacts on the top surface. Such contacts can be wirebonded, for example, to electrical contacts on the submount or to conductive traces on a trace layer overlying the metal substrate. In addition, Figures 2-4 show one L attached to the nuclear submount.
Although only ED is shown, some embodiments may use more than one LED per submount. In such embodiments, some or all of the multiple LEDs in one submount may be
For example, they can be electrically connected in series, parallel or anti-parallel. Furthermore, the LED array according to the present invention is
It can include some LEDs applied to the submount and some LEDs directly attached to the metal substrate. Although FIGS. 1-4 show only one layer 8 of conductive traces disposed over the metal substrate 6, other embodiments can use multiple layers of conductive traces.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施の形態にかかるLEDアレ
イの一部を模式的に示す図
FIG. 1 is a diagram schematically showing a part of an LED array according to a first embodiment of the present invention.

【図2】本発明の第2の実施の形態にかかるLEDアレ
イの一部を模式的に示す図
FIG. 2 is a diagram schematically showing a part of an LED array according to a second embodiment of the present invention.

【図3】本発明の第3の実施の形態にかかるLEDアレ
イの一部を模式的に示す図
FIG. 3 is a diagram schematically showing a part of an LED array according to a third embodiment of the present invention.

【図4】本発明の第4の実施の形態にかかるLEDアレ
イの一部を模式的に示す図
FIG. 4 is a diagram schematically showing a part of an LED array according to a fourth embodiment of the present invention.

【図5】本発明の1つの実施の形態にかかるLEDまた
はLEDサブマウントの底面を模式的に示す図
FIG. 5 is a diagram schematically showing a bottom surface of an LED or an LED submount according to one embodiment of the present invention.

【図6】本発明の1つの実施の形態にかかるLEDアレ
イの一部を模式的に示す上面図
FIG. 6 is a top view schematically showing a part of an LED array according to one embodiment of the present invention.

【図7】図6に示すLEDアレイを模式的に示す上面図FIG. 7 is a top view schematically showing the LED array shown in FIG.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 シャーン ハーラー アメリカ合衆国 カリフォルニア州 94025 メンロ パーク シャロン パー ク ドライヴ 1100 コンドミニアム #27 (72)発明者 ダグラス ピー ウールヴァートン アメリカ合衆国 カリフォルニア州 94043 マウンテン ビュー ウィスマン パーク ドライヴ 461 Fターム(参考) 5F041 AA04 AA33 CA34 DA03 DA04 DA13 DA19 DA20 DA34 DA44 DA57 DA82 DB08 FF11    ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Shahn Harrah             United States California             94025 Menlo Park Sharon Par             Kudo Drive 1100 Condominium             # 27 (72) Inventor Douglas P. Woolverton             United States California             94043 Mountain View Wisman               Park Drive 461 F-term (reference) 5F041 AA04 AA33 CA34 DA03 DA04                       DA13 DA19 DA20 DA34 DA44                       DA57 DA82 DB08 FF11

Claims (19)

【特許請求の範囲】[Claims] 【請求項1】 発光ダイオードのアレイであって、 金属基層と、 複数の通過部を通過させかつ前記金属基層の上に配置さ
れた誘電体層と、 該誘電体層の上に配置された複数の電気伝導性トレース
と、 複数の発光ダイオードと、を備え、 該複数の発光ダイオードのそれぞれは、前記通過部のう
ちの対応する1つ通過部の上に配置され、かつ、第1の
電気コンタクトおよび第2の電気コンタクトを含み、 該第1の電気コンタクトおよび該第2の電気コンタクト
は、前記電気伝導性トレースのそれぞれを分離するよう
に電気的に接続されており、 前記通過部のそれぞれは、前記金属基層に熱接触しかつ
前記発光ダイオードのうちの前記対応する発光ダイオー
ドに熱接触する、ことを特徴とする発光ダイオードのア
レイ。
1. An array of light emitting diodes, comprising: a metal base layer; a dielectric layer that passes through a plurality of passages and is disposed on the metal base layer; and a plurality of dielectric layers disposed on the dielectric layer. Of electrically conductive traces and a plurality of light emitting diodes, each of the plurality of light emitting diodes being disposed on a corresponding one of the passages and having a first electrical contact. And a second electrical contact, the first electrical contact and the second electrical contact are electrically connected to separate each of the electrically conductive traces, and each of the passages is An array of light emitting diodes in thermal contact with the metal base layer and in thermal contact with the corresponding one of the light emitting diodes.
【請求項2】 前記金属基層は、約0.01インチより
大きな厚さを有する請求項1に記載の発光ダイオードの
アレイ。
2. The array of light emitting diodes of claim 1, wherein the metal base layer has a thickness greater than about 0.01 inch.
【請求項3】 前記発光ダイオードのうちの少なくとも
1つの発光ダイオードは、同一の面に配置されかつ前記
金属基層に対向するように志向された前記第1の電気コ
ンタクトおよび前記第2の電気コンタクトを含む請求項
1に記載の発光ダイオードのアレイ。
3. At least one light emitting diode of the light emitting diodes has the first electrical contact and the second electrical contact disposed on the same surface and oriented to face the metal base layer. An array of light emitting diodes according to claim 1 including.
【請求項4】 前記通過部のうちの少なくとも1つの通
過部における前記熱伝導性材料は、前記複数の伝導性ト
レースから電気的に絶縁され、かつ、前記発光ダイオー
ドのうちの前記対応する発光ダイオードにおける前記第
1および前記第2の電気コンタクトから電気的に絶縁さ
れている請求項1に記載の発光ダイオードのアレイ。
4. The thermally conductive material in at least one of the passages is electrically isolated from the plurality of conductive traces and the corresponding light emitting diode of the light emitting diodes. The array of light emitting diodes of claim 1 electrically isolated from the first and second electrical contacts at.
【請求項5】 前記熱伝導性材料は半田材料を含む請求
項1に記載の発光ダイオードのアレイ。
5. The array of light emitting diodes of claim 1, wherein the thermally conductive material comprises a solder material.
【請求項6】 前記通過部のうちの少なくとも1つの通
過部における前記熱伝導性材料は、前記発光ダイオード
のうちの前記対応する発光ダイオードに直接接触する請
求項1に記載の発光ダイオードのアレイ。
6. The array of light emitting diodes of claim 1, wherein the thermally conductive material in at least one of the passages is in direct contact with the corresponding light emitting diode of the light emitting diodes.
【請求項7】 前記通過部のうちの少なくとも1つの通
過部における前記熱伝導性材料は、前記金属基層に直接
接触する請求項1に記載の発光ダイオードのアレイ。
7. The array of light emitting diodes of claim 1, wherein the thermally conductive material in at least one of the passages is in direct contact with the metal substrate.
【請求項8】 前記発光ダイオードのうちの1つの発光
ダイオードと前記通過部のうちの前記対応する通過部と
の間に配置され、かつ、前記通過部のうちの前記対応す
る通過部における前記熱伝導性材料に直接接触する、サ
ブマウントを備える請求項1に記載の発光ダイオードの
アレイ。
8. A heat sink disposed between a light emitting diode of one of said light emitting diodes and said corresponding one of said passages, and said heat in said corresponding one of said passages. The array of light emitting diodes of claim 1 comprising a submount in direct contact with a conductive material.
【請求項9】 前記サブマウントは珪素を含む請求項8
に記載の発光ダイオードのアレイ。
9. The submount comprises silicon.
An array of light emitting diodes according to.
【請求項10】 前記サブマウントは通過部を含み、 前記発光ダイオードのうちの前記1つの発光ダイオード
における前記第1の電気コンタクトおよび前記第2の電
気コンタクトは、前記通過部を介して前記電気伝導性ト
レースに電気的に接続される、請求項8に記載の発光ダ
イオードのアレイ。
10. The submount includes a passage portion, and the first electrical contact and the second electrical contact in the one light emitting diode of the light emitting diodes are electrically conductive via the passage portion. 9. An array of light emitting diodes according to claim 8 electrically connected to the sex traces.
【請求項11】 発光ダイオードのアレイを形成する方
法であって、 金属基層の上に、複数の電気伝導性トレースが形成され
る誘電体層を配置する工程と、 該誘電体層に複数の通過部を形成する工程であって、該
通過部のそれぞれは前記金属基層を露出させる工程と、 前記通過部のそれぞれに、前記金属基層に熱接触させる
熱伝導性材料を導入する工程と、 複数の発光ダイオードのそれぞれを前記通過部のうちの
対応する通過部の上に配置する工程であって、各発光ダ
イオードが前記対応する通過部における前記熱伝導性材
料に熱接触するようにする工程と、 前記発光ダイオードのそれぞれについて、第1の電気コ
ンタクトおよび第2の電気コンタクトを前記熱伝導性ト
レースのそれぞれを分離するように電気的に接続する工
程と、を備えることを特徴とする方法。
11. A method of forming an array of light emitting diodes, comprising: disposing a dielectric layer having a plurality of electrically conductive traces formed on a metal base layer; and forming a plurality of passes through the dielectric layer. A step of forming a portion, each of the passage portions exposing the metal base layer, a step of introducing a heat conductive material into thermal contact with the metal base layer into each of the passage portions, Disposing each of the light emitting diodes on a corresponding one of the passages, wherein each light emitting diode is in thermal contact with the heat conductive material in the corresponding passage, and Electrically connecting, for each of the light emitting diodes, a first electrical contact and a second electrical contact to separate each of the thermally conductive traces. Wherein the.
【請求項12】 前記金属基層は、約0.01インチよ
り大きな厚さを有する請求項11に記載の方法。
12. The method of claim 11, wherein the metal base layer has a thickness greater than about 0.01 inch.
【請求項13】 前記通過部のうちの少なくとも1つの
通過部における前記熱伝導性材料を、前記複数の伝導性
トレースと、前記発光ダイオードのうちの前記対応する
発光ダイオードにおける前記第1および前記第2の電気
コンタクトとから電気的に絶縁する工程を備える請求項
11に記載の方法。
13. The thermally conductive material in at least one of the passages, the thermally conductive material in the plurality of conductive traces and the first and the second in the corresponding light emitting diode of the light emitting diodes. The method of claim 11, comprising electrically insulating from two electrical contacts.
【請求項14】 前記通過部のうちの少なくとも1つの
通過部に半田材料を導入する工程を備える請求項11に
記載の方法。
14. The method of claim 11, comprising introducing a solder material into at least one of the passages.
【請求項15】 前記発光ダイオードのうちの少なくと
も1つの発光ダイオードを、前記対応する通過部におけ
る前記熱伝導性材料に直接接触するように配置する工程
を備える請求項11に記載の方法。
15. The method of claim 11, comprising placing at least one of the light emitting diodes in direct contact with the thermally conductive material in the corresponding passage.
【請求項16】 前記通過部のうちの少なくとも1つの
通過部における前記熱伝導性材料は、前記金属基層に直
接接触する請求項11に記載の方法。
16. The method of claim 11, wherein the thermally conductive material in at least one of the passages is in direct contact with the metal substrate.
【請求項17】 前記発光ダイオードのうちの1つの発
光ダイオードと前記通過部のうちの前記対応する通過部
との間にサブマウントを配置する工程であって、該サブ
マウントは前記通過部のうちの前記対応する通過部にお
ける前記熱伝導性材料に直接接触するようにする工程を
備える請求項11に記載の方法。
17. A step of disposing a submount between one light emitting diode of the light emitting diodes and the corresponding one of the passage portions, the submount being one of the passage portions. 12. The method of claim 11, comprising direct contact with the thermally conductive material at the corresponding passage of the.
【請求項18】 前記サブマウントを珪素により形成す
る工程を備える請求項17に記載の方法。
18. The method of claim 17, comprising forming the submount from silicon.
【請求項19】 前記サブマウントに通過部を形成する
工程であって、前記発光ダイオードのうちの前記1つの
発光ダイオードにおける前記第1の電気コンタクトおよ
び前記第2の電気コンタクトが、該通過部を介して前記
電気伝導性トレースに電気的に接続される工程を備える
請求項17に記載の方法。
19. The step of forming a passage in the submount, wherein the first electrical contact and the second electrical contact in the one light emitting diode of the light emitting diodes form the passage. 18. The method of claim 17, comprising electrically connecting to the electrically conductive trace via.
JP2002295370A 2001-10-09 2002-10-08 High bundle LED array Expired - Lifetime JP4330863B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/974563 2001-10-09
US09/974,563 US6498355B1 (en) 2001-10-09 2001-10-09 High flux LED array

Publications (2)

Publication Number Publication Date
JP2003124524A true JP2003124524A (en) 2003-04-25
JP4330863B2 JP4330863B2 (en) 2009-09-16

Family

ID=25522181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002295370A Expired - Lifetime JP4330863B2 (en) 2001-10-09 2002-10-08 High bundle LED array

Country Status (4)

Country Link
US (1) US6498355B1 (en)
JP (1) JP4330863B2 (en)
DE (1) DE10246892B4 (en)
TW (1) TW561635B (en)

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004102685A1 (en) * 2003-05-14 2004-11-25 Nano Packaging Technology, Inc. Light emitting device, package structure thereof and manufacturing method thereof
JP2005107348A (en) * 2003-10-01 2005-04-21 Semiconductor Energy Lab Co Ltd Projector
JP2005175427A (en) * 2003-12-05 2005-06-30 Internatl Resistive Co Of Texas Lp Light emitting assembly with support for heat dissipation
JP2007013143A (en) * 2005-06-30 2007-01-18 Lg Phillips Lcd Co Ltd Manufacturing method of light emitting diode package, backlight unit, and liquid crystal display
JP2007116129A (en) * 2005-09-20 2007-05-10 Matsushita Electric Works Ltd Light emitting device
JP2007116122A (en) * 2005-09-20 2007-05-10 Matsushita Electric Works Ltd Light emitting device
JP2007116128A (en) * 2005-09-20 2007-05-10 Matsushita Electric Works Ltd Light emitting device
JP2007514320A (en) * 2003-12-09 2007-05-31 ゲルコアー リミテッド ライアビリティ カンパニー Surface mount light emitting chip package
JP2007234886A (en) * 2006-03-01 2007-09-13 Compal Communications Inc Electronic element assembly with thermal dissipation constitution
US7309145B2 (en) 2004-01-13 2007-12-18 Seiko Epson Corporation Light source apparatus and projection display apparatus
JP2008508706A (en) * 2004-07-27 2008-03-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Light emitting diode assembly
US7436000B2 (en) 2005-01-26 2008-10-14 Samsung Electronics Co., Ltd. Two dimensional light source using light emitting diode and liquid crystal display device using the two dimensional light source
JP2009130299A (en) * 2007-11-27 2009-06-11 Panasonic Electric Works Co Ltd Light emitting device
KR101116723B1 (en) 2003-11-07 2012-03-08 트리도닉 예너스도르프 게엠베하 Light-emitting diode arrangement comprising a heat-dissipating plate
WO2012064405A1 (en) * 2010-11-08 2012-05-18 Bridgelux, Inc. Led-based light source utilizing asymmetric conductors
US8487337B2 (en) 2006-04-24 2013-07-16 Cree, Inc. Side view surface mount LED
US8617909B2 (en) 2004-07-02 2013-12-31 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
KR20140042193A (en) * 2012-09-28 2014-04-07 제너럴 일렉트릭 캄파니 Overlay circuit structure for interconnecting light emitting semiconductors
US8858004B2 (en) 2005-12-22 2014-10-14 Cree, Inc. Lighting device
US8901585B2 (en) 2003-05-01 2014-12-02 Cree, Inc. Multiple component solid state white light
JP2015513226A (en) * 2012-04-02 2015-04-30 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH Light emitting semiconductor component and method for manufacturing light emitting semiconductor component
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US9666772B2 (en) 2003-04-30 2017-05-30 Cree, Inc. High powered light emitter packages with compact optics
KR20190079598A (en) * 2019-06-26 2019-07-05 제너럴 일렉트릭 캄파니 Overlay circuit structure for interconnecting light emitting semiconductors
US10615324B2 (en) 2013-06-14 2020-04-07 Cree Huizhou Solid State Lighting Company Limited Tiny 6 pin side view surface mount LED

Families Citing this family (285)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6806659B1 (en) * 1997-08-26 2004-10-19 Color Kinetics, Incorporated Multicolored LED lighting method and apparatus
US7132804B2 (en) * 1997-12-17 2006-11-07 Color Kinetics Incorporated Data delivery track
PT1422975E (en) 2000-04-24 2010-07-09 Philips Solid State Lighting Light-emitting diode based product
US6888167B2 (en) 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
US7358929B2 (en) * 2001-09-17 2008-04-15 Philips Solid-State Lighting Solutions, Inc. Tile lighting methods and systems
US6942365B2 (en) 2002-12-10 2005-09-13 Robert Galli LED lighting assembly
US7121680B2 (en) * 2001-12-10 2006-10-17 Galli Robert D LED lighting assembly with improved heat management
US6827468B2 (en) * 2001-12-10 2004-12-07 Robert D. Galli LED lighting assembly
US7118255B2 (en) * 2001-12-10 2006-10-10 Galli Robert D LED lighting assembly with improved heat exchange
US7652303B2 (en) * 2001-12-10 2010-01-26 Galli Robert D LED lighting assembly
TW535307B (en) * 2002-03-04 2003-06-01 United Epitaxy Co Ltd Package of light emitting diode with protective diode
CN1653297B (en) 2002-05-08 2010-09-29 佛森技术公司 High efficiency solid-state light source and methods of use and manufacture
TW554553B (en) * 2002-08-09 2003-09-21 United Epitaxy Co Ltd Sub-mount for high power light emitting diode
US7800121B2 (en) * 2002-08-30 2010-09-21 Lumination Llc Light emitting diode component
US7224000B2 (en) * 2002-08-30 2007-05-29 Lumination, Llc Light emitting diode component
DE10245930A1 (en) * 2002-09-30 2004-04-08 Osram Opto Semiconductors Gmbh Optoelectronic component and component module
US7009199B2 (en) * 2002-10-22 2006-03-07 Cree, Inc. Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
US7153004B2 (en) * 2002-12-10 2006-12-26 Galli Robert D Flashlight housing
US8093620B2 (en) * 2002-12-10 2012-01-10 Galli Robert D LED lighting assembly with improved heat management
JP4124638B2 (en) * 2002-12-16 2008-07-23 順一 島田 LED lighting system
US7175712B2 (en) * 2003-01-09 2007-02-13 Con-Trol-Cure, Inc. Light emitting apparatus and method for curing inks, coatings and adhesives
US20040164325A1 (en) * 2003-01-09 2004-08-26 Con-Trol-Cure, Inc. UV curing for ink jet printer
US20060121208A1 (en) * 2003-01-09 2006-06-08 Siegel Stephen B Multiple wavelength UV curing
US7211299B2 (en) * 2003-01-09 2007-05-01 Con-Trol-Cure, Inc. UV curing method and apparatus
US7498065B2 (en) 2003-01-09 2009-03-03 Con-Trol-Cure, Inc. UV printing and curing of CDs, DVDs, Golf Balls And Other Products
US7399982B2 (en) * 2003-01-09 2008-07-15 Con-Trol-Cure, Inc UV curing system and process with increased light intensity
US20050042390A1 (en) * 2003-01-09 2005-02-24 Siegel Stephen B. Rotary UV curing method and apparatus
US7465909B2 (en) * 2003-01-09 2008-12-16 Con-Trol-Cure, Inc. UV LED control loop and controller for causing emitting UV light at a much greater intensity for UV curing
US7137696B2 (en) * 2003-01-09 2006-11-21 Con-Trol-Cure, Inc. Ink jet UV curing
US7671346B2 (en) 2003-01-09 2010-03-02 Con-Trol-Cure, Inc. Light emitting apparatus and method for curing inks, coatings and adhesives
US7550777B2 (en) * 2003-01-10 2009-06-23 Toyoda Gosei, Co., Ltd. Light emitting device including adhesion layer
US7170151B2 (en) * 2003-01-16 2007-01-30 Philips Lumileds Lighting Company, Llc Accurate alignment of an LED assembly
US6977396B2 (en) * 2003-02-19 2005-12-20 Lumileds Lighting U.S., Llc High-powered light emitting device with improved thermal properties
JP2004265986A (en) * 2003-02-28 2004-09-24 Citizen Electronics Co Ltd High luminance light emitting element, and method for manufacturing the same and light emitting device using the same
US7528421B2 (en) * 2003-05-05 2009-05-05 Lamina Lighting, Inc. Surface mountable light emitting diode assemblies packaged for high temperature operation
US7633093B2 (en) * 2003-05-05 2009-12-15 Lighting Science Group Corporation Method of making optical light engines with elevated LEDs and resulting product
US7777235B2 (en) * 2003-05-05 2010-08-17 Lighting Science Group Corporation Light emitting diodes with improved light collimation
US20070001177A1 (en) * 2003-05-08 2007-01-04 Koninklijke Philips Electronics N.V. Integrated light-emitting diode system
KR100566140B1 (en) * 2003-05-14 2006-03-30 (주)나노팩 Light emitting diode and package structure and method of manufacturing thereof
JP2005158957A (en) * 2003-11-25 2005-06-16 Matsushita Electric Works Ltd Light emitting device
CN100391017C (en) * 2003-05-26 2008-05-28 松下电工株式会社 Light-emitting device
US7495322B2 (en) * 2003-05-26 2009-02-24 Panasonic Electric Works Co., Ltd. Light-emitting device
AT501081B8 (en) * 2003-07-11 2007-02-15 Tridonic Optoelectronics Gmbh LED AS WELL AS LED LIGHT SOURCE
DE102004063978B4 (en) 2003-07-17 2019-01-24 Toyoda Gosei Co., Ltd. Light-emitting device
US7482638B2 (en) * 2003-08-29 2009-01-27 Philips Lumileds Lighting Company, Llc Package for a semiconductor light emitting device
US7183587B2 (en) * 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
US7304418B2 (en) * 2003-10-24 2007-12-04 Seiko Epson Corporation Light source apparatus with light-emitting chip which generates light and heat
US7819550B2 (en) 2003-10-31 2010-10-26 Phoseon Technology, Inc. Collection optics for led array with offset hemispherical or faceted surfaces
US7524085B2 (en) 2003-10-31 2009-04-28 Phoseon Technology, Inc. Series wiring of highly reliable light sources
CN100375300C (en) * 2003-11-25 2008-03-12 葛世潮 High power LED
US7321161B2 (en) * 2003-12-19 2008-01-22 Philips Lumileds Lighting Company, Llc LED package assembly with datum reference feature
US7267461B2 (en) * 2004-01-28 2007-09-11 Tir Systems, Ltd. Directly viewable luminaire
US20050179049A1 (en) * 2004-02-13 2005-08-18 Ying-Ming Ho Light emitting diode
DE102004009284A1 (en) * 2004-02-26 2005-09-15 Osram Opto Semiconductors Gmbh Light-emitting diode arrangement for a high-performance light-emitting diode and method for producing a light-emitting diode arrangement
US20050199899A1 (en) * 2004-03-11 2005-09-15 Ming-Der Lin Package array and package unit of flip chip LED
US20060017658A1 (en) * 2004-03-15 2006-01-26 Onscreen Technologies, Inc. Rapid dispatch emergency signs
US7235878B2 (en) 2004-03-18 2007-06-26 Phoseon Technology, Inc. Direct cooling of LEDs
WO2005091392A1 (en) 2004-03-18 2005-09-29 Phoseon Technology, Inc. Micro-reflectors on a substrate for high-density led array
EP1743384B1 (en) * 2004-03-30 2015-08-05 Phoseon Technology, Inc. Led array having array-based led detectors
DE102004016847A1 (en) 2004-04-07 2005-12-22 P.M.C. Projekt Management Consult Gmbh Light emitting diode arrangement and method for producing a light emitting diode array
DK1756876T3 (en) * 2004-04-12 2011-07-18 Phoseon Technology Inc High-density LED array
EP1738156A4 (en) 2004-04-19 2017-09-27 Phoseon Technology, Inc. Imaging semiconductor strucutures using solid state illumination
US7138659B2 (en) * 2004-05-18 2006-11-21 Onscreen Technologies, Inc. LED assembly with vented circuit board
KR100623024B1 (en) * 2004-06-10 2006-09-19 엘지전자 주식회사 High Power LED Package
KR100593919B1 (en) * 2004-07-01 2006-06-30 삼성전기주식회사 Light emitting diode module for automobile headlight and automobile headlight having the same
AU2005270047B2 (en) * 2004-07-02 2011-06-02 Discus Dental, Llc. Dental light device having an improved heat sink
US20060018123A1 (en) * 2004-07-02 2006-01-26 Rose Eric P Curing light having a reflector
JP2008505454A (en) * 2004-07-02 2008-02-21 ディスカス デンタル インプレッションズ インコーポレーテッド Curing light with reflector
TWI302038B (en) * 2004-07-07 2008-10-11 Epistar Corp Light emitting diode having an adhesive layer and heat paths
DE102004036960A1 (en) * 2004-07-30 2006-03-23 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Printed circuit board and method for producing such a printed circuit board
US7405093B2 (en) * 2004-08-18 2008-07-29 Cree, Inc. Methods of assembly for a semiconductor light emitting device package
DE102004045950A1 (en) * 2004-09-22 2006-03-30 Osram Opto Semiconductors Gmbh Housing for an optoelectronic component, optoelectronic component and method for producing an optoelectronic component
US7081667B2 (en) * 2004-09-24 2006-07-25 Gelcore, Llc Power LED package
CN101036238B (en) * 2004-10-04 2014-01-08 株式会社东芝 Light emitting device, lighting equipment or liquid crystal display device using such light emitting device
US20060097385A1 (en) 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
TWI262608B (en) * 2004-12-08 2006-09-21 Univ Nat Central Light emitting device
KR100580753B1 (en) 2004-12-17 2006-05-15 엘지이노텍 주식회사 Light emitting device package
US7296916B2 (en) * 2004-12-21 2007-11-20 3M Innovative Properties Company Illumination assembly and method of making same
US7285802B2 (en) * 2004-12-21 2007-10-23 3M Innovative Properties Company Illumination assembly and method of making same
US20060131601A1 (en) * 2004-12-21 2006-06-22 Ouderkirk Andrew J Illumination assembly and method of making same
US7322732B2 (en) 2004-12-23 2008-01-29 Cree, Inc. Light emitting diode arrays for direct backlighting of liquid crystal displays
KR101288758B1 (en) 2004-12-30 2013-07-23 포세온 테크날러지 인코퍼레이티드 Methods and systems relating to light sources for use in industrial processes
US20060151801A1 (en) * 2005-01-11 2006-07-13 Doan Trung T Light emitting diode with thermo-electric cooler
US20060154393A1 (en) * 2005-01-11 2006-07-13 Doan Trung T Systems and methods for removing operating heat from a light emitting diode
US7304694B2 (en) * 2005-01-12 2007-12-04 Cree, Inc. Solid colloidal dispersions for backlighting of liquid crystal displays
TWI352437B (en) * 2007-08-27 2011-11-11 Epistar Corp Optoelectronic semiconductor device
WO2006093889A2 (en) 2005-02-28 2006-09-08 Color Kinetics Incorporated Configurations and methods for embedding electronics or light emitters in manufactured materials
US7411225B2 (en) * 2005-03-21 2008-08-12 Lg Electronics Inc. Light source apparatus
JP4890775B2 (en) * 2005-03-23 2012-03-07 パナソニック株式会社 Light emitting module
US20080296589A1 (en) * 2005-03-24 2008-12-04 Ingo Speier Solid-State Lighting Device Package
CA2614803C (en) * 2005-04-05 2015-08-25 Tir Technology Lp Electronic device package with an integrated evaporator
WO2006105644A1 (en) * 2005-04-05 2006-10-12 Tir Systems Ltd. Mounting assembly for optoelectronic devices
CN100420019C (en) * 2005-04-20 2008-09-17 王锐勋 Packaging method for colony light-emitting diode chips and devices thereof
TWI294694B (en) * 2005-06-14 2008-03-11 Ind Tech Res Inst Led wafer-level chip scale packaging
KR20060131327A (en) * 2005-06-16 2006-12-20 엘지전자 주식회사 Method of manufacturing light emitting diode
US20060289887A1 (en) * 2005-06-24 2006-12-28 Jabil Circuit, Inc. Surface mount light emitting diode (LED) assembly with improved power dissipation
WO2007002644A2 (en) * 2005-06-27 2007-01-04 Lamina Lighting, Inc. Light emitting diode package and method for making same
WO2007000037A1 (en) * 2005-06-29 2007-01-04 Mitchell, Richard, J. Bendable high flux led array
EP1909336B1 (en) * 2005-06-30 2014-10-22 Panasonic Corporation Light emitting device
WO2007034575A1 (en) * 2005-09-20 2007-03-29 Matsushita Electric Works, Ltd. Light emitting device
WO2007034803A1 (en) * 2005-09-20 2007-03-29 Matsushita Electric Works, Ltd. Led lighting apparatus
US20070081339A1 (en) * 2005-10-07 2007-04-12 Chung Huai-Ku LED light source module with high efficiency heat dissipation
JP4013077B2 (en) * 2005-11-21 2007-11-28 松下電工株式会社 Light emitting device and manufacturing method thereof
JP3992059B2 (en) * 2005-11-21 2007-10-17 松下電工株式会社 Method for manufacturing light emitting device
DE602005016280D1 (en) * 2005-11-29 2009-10-08 Nat Central University Jungli Light emitting device
US7642527B2 (en) 2005-12-30 2010-01-05 Phoseon Technology, Inc. Multi-attribute light effects for use in curing and other applications involving photoreactions and processing
US20070176182A1 (en) * 2006-01-27 2007-08-02 Way-Jze Wen Structure for integrating LED circuit onto heat-dissipation substrate
TWI333580B (en) * 2006-02-08 2010-11-21 Chimei Innolux Corp Backlight module and liquid crystal display using the same
US9335006B2 (en) 2006-04-18 2016-05-10 Cree, Inc. Saturated yellow phosphor converted LED and blue converted red LED
KR100796670B1 (en) 2006-04-27 2008-01-22 (주)루멘스 Light Emitting Diode and Method for manufacturing thereof
EP2027412B1 (en) 2006-05-23 2018-07-04 Cree, Inc. Lighting device
US7906794B2 (en) 2006-07-05 2011-03-15 Koninklijke Philips Electronics N.V. Light emitting device package with frame and optically transmissive element
KR200429400Y1 (en) * 2006-07-28 2006-10-23 지아 쭁 엔터프라이즈 컴퍼니 리미티드 Structure of Bipolar substrate of LCD
TWI351085B (en) * 2006-08-08 2011-10-21 Silicon Base Dev Inc Structure and manufacturing method of package base for power semiconductor device
US7753540B2 (en) * 2006-08-21 2010-07-13 Osram Sylvania Inc. Illuminable indicator and light engine therefor
US7842960B2 (en) * 2006-09-06 2010-11-30 Lumination Llc Light emitting packages and methods of making same
KR101266490B1 (en) * 2006-09-08 2013-05-23 삼성디스플레이 주식회사 Backlight assembly and liquid crystal display having the same
TW200814362A (en) * 2006-09-13 2008-03-16 Bright Led Electronics Corp Light-emitting diode device with high heat dissipation property
US20080068807A1 (en) * 2006-09-20 2008-03-20 Sunonwealth Electric Machine Industry Co., Ltd. Heat-dissipating device for back light source for flat panel display
DE102006059702A1 (en) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Opto-electronic element has metal core plate, metal core, dielectric layer applied on metal core and electrically conductive layer applied on dielectric layer and element also has chip carrier connected with metal core plate
KR100765240B1 (en) * 2006-09-30 2007-10-09 서울옵토디바이스주식회사 Light emitting diode package having light emitting cell with different size and light emitting device thereof
US7952262B2 (en) 2006-09-30 2011-05-31 Ruud Lighting, Inc. Modular LED unit incorporating interconnected heat sinks configured to mount and hold adjacent LED modules
US9243794B2 (en) 2006-09-30 2016-01-26 Cree, Inc. LED light fixture with fluid flow to and from the heat sink
US20090086491A1 (en) * 2007-09-28 2009-04-02 Ruud Lighting, Inc. Aerodynamic LED Floodlight Fixture
US9028087B2 (en) 2006-09-30 2015-05-12 Cree, Inc. LED light fixture
US7686469B2 (en) 2006-09-30 2010-03-30 Ruud Lighting, Inc. LED lighting fixture
BRPI0718086A2 (en) * 2006-10-31 2013-11-05 Tir Technology Lp LIGHTING DEVICE PACKAGING
US20080101073A1 (en) * 2006-11-01 2008-05-01 Discus Dental, Llc Dental Light Devices Having an Improved Heat Sink
US8779444B2 (en) * 2006-11-03 2014-07-15 Relume Technologies, Inc. LED light engine with applied foil construction
US7897980B2 (en) * 2006-11-09 2011-03-01 Cree, Inc. Expandable LED array interconnect
DE202006017583U1 (en) 2006-11-17 2008-03-27 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH lighting device
US20080169480A1 (en) * 2007-01-11 2008-07-17 Visera Technologies Company Limited Optoelectronic device package and packaging method thereof
WO2008104103A1 (en) * 2007-03-01 2008-09-04 Tsungwen Chan Method for manufacturing a plurality of smd leds and structure thereof
US7618163B2 (en) 2007-04-02 2009-11-17 Ruud Lighting, Inc. Light-directing LED apparatus
US7898811B2 (en) * 2007-04-10 2011-03-01 Raled, Inc. Thermal management of LEDs on a printed circuit board and associated methods
CN101304059B (en) * 2007-05-09 2010-09-08 富士迈半导体精密工业(上海)有限公司 LED component and LED display device
US20090008662A1 (en) * 2007-07-05 2009-01-08 Ian Ashdown Lighting device package
TW200904316A (en) * 2007-07-13 2009-01-16 Kai-Yu Lin Heat-dissipation structure of luminous device
CN101400210B (en) * 2007-09-27 2010-06-02 北京京东方光电科技有限公司 Printed circuit board equipped with LED
USD615504S1 (en) * 2007-10-31 2010-05-11 Cree, Inc. Emitter package
GB2455069B (en) * 2007-11-16 2010-05-12 Uriel Meyer Wittenberg Improved led device
DE102007055133A1 (en) * 2007-11-19 2009-05-20 Osram Gesellschaft mit beschränkter Haftung Lighting device with a heat sink
TWI354529B (en) * 2007-11-23 2011-12-11 Ind Tech Res Inst Metal thermal interface material and thermal modul
US20090208894A1 (en) * 2008-02-18 2009-08-20 Discus Dental, Llc Curing Light
EP2093429A1 (en) * 2008-02-25 2009-08-26 Siemens Aktiengesellschaft Compressor unit
TWI419357B (en) * 2008-03-12 2013-12-11 Bright Led Electronics Corp Manufacturing method of light emitting module
US8378372B2 (en) * 2008-03-25 2013-02-19 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and horizontal signal routing
US8531024B2 (en) * 2008-03-25 2013-09-10 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and multilevel conductive trace
US8067784B2 (en) 2008-03-25 2011-11-29 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and substrate
US8129742B2 (en) * 2008-03-25 2012-03-06 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and plated through-hole
US8415703B2 (en) * 2008-03-25 2013-04-09 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base/flange heat spreader and cavity in flange
US20100072511A1 (en) * 2008-03-25 2010-03-25 Lin Charles W C Semiconductor chip assembly with copper/aluminum post/base heat spreader
US8207553B2 (en) * 2008-03-25 2012-06-26 Bridge Semiconductor Corporation Semiconductor chip assembly with base heat spreader and cavity in base
US8525214B2 (en) * 2008-03-25 2013-09-03 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader with thermal via
US20100181594A1 (en) * 2008-03-25 2010-07-22 Lin Charles W C Semiconductor chip assembly with post/base heat spreader and cavity over post
US8288792B2 (en) * 2008-03-25 2012-10-16 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base/post heat spreader
US8310043B2 (en) * 2008-03-25 2012-11-13 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader with ESD protection layer
US8324723B2 (en) * 2008-03-25 2012-12-04 Bridge Semiconductor Corporation Semiconductor chip assembly with bump/base heat spreader and dual-angle cavity in bump
US8193556B2 (en) * 2008-03-25 2012-06-05 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and cavity in post
US8212279B2 (en) * 2008-03-25 2012-07-03 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader, signal post and cavity
US8354688B2 (en) 2008-03-25 2013-01-15 Bridge Semiconductor Corporation Semiconductor chip assembly with bump/base/ledge heat spreader, dual adhesives and cavity in bump
US20110278638A1 (en) 2008-03-25 2011-11-17 Lin Charles W C Semiconductor chip assembly with post/dielectric/post heat spreader
US20110156090A1 (en) * 2008-03-25 2011-06-30 Lin Charles W C Semiconductor chip assembly with post/base/post heat spreader and asymmetric posts
US8329510B2 (en) * 2008-03-25 2012-12-11 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a post/base heat spreader with an ESD protection layer
US20110163348A1 (en) * 2008-03-25 2011-07-07 Bridge Semiconductor Corporation Semiconductor chip assembly with bump/base heat spreader and inverted cavity in bump
US8269336B2 (en) * 2008-03-25 2012-09-18 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and signal post
US20090284932A1 (en) * 2008-03-25 2009-11-19 Bridge Semiconductor Corporation Thermally Enhanced Package with Embedded Metal Slug and Patterned Circuitry
US8232576B1 (en) 2008-03-25 2012-07-31 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and ceramic block in post
US8148747B2 (en) * 2008-03-25 2012-04-03 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base/cap heat spreader
US8203167B2 (en) * 2008-03-25 2012-06-19 Bridge Semiconductor Corporation Semiconductor chip assembly with post/base heat spreader and adhesive between base and terminal
US8314438B2 (en) * 2008-03-25 2012-11-20 Bridge Semiconductor Corporation Semiconductor chip assembly with bump/base heat spreader and cavity in bump
US20100052005A1 (en) * 2008-03-25 2010-03-04 Lin Charles W C Semiconductor chip assembly with post/base heat spreader and conductive trace
DE102008022414B4 (en) * 2008-05-06 2013-03-14 Rüdiger Lanz Illuminants for use in street lighting and a device for street lighting
US8388193B2 (en) 2008-05-23 2013-03-05 Ruud Lighting, Inc. Lens with TIR for off-axial light distribution
US9423096B2 (en) 2008-05-23 2016-08-23 Cree, Inc. LED lighting apparatus
US8348475B2 (en) 2008-05-23 2013-01-08 Ruud Lighting, Inc. Lens with controlled backlight management
CN101594730B (en) * 2008-05-26 2012-01-04 欣兴电子股份有限公司 Circuit board with conductive structure
US7841750B2 (en) 2008-08-01 2010-11-30 Ruud Lighting, Inc. Light-directing lensing member with improved angled light distribution
US7825427B2 (en) * 2008-09-12 2010-11-02 Bridgelux, Inc. Method and apparatus for generating phosphor film with textured surface
TW201017922A (en) * 2008-10-23 2010-05-01 Everlight Electronics Co Ltd Light emitting diode package
US20100226139A1 (en) 2008-12-05 2010-09-09 Permlight Products, Inc. Led-based light engine
WO2010077132A1 (en) 2008-12-31 2010-07-08 Draka Comteq B.V. Uvled apparatus for curing glass-fiber coatings
US8598602B2 (en) 2009-01-12 2013-12-03 Cree, Inc. Light emitting device packages with improved heat transfer
US7923739B2 (en) 2009-06-05 2011-04-12 Cree, Inc. Solid state lighting device
TWI423421B (en) * 2009-01-17 2014-01-11 Bright Led Electronics Corp A light emitting device and a manufacturing method thereof
JP4780203B2 (en) * 2009-02-10 2011-09-28 日亜化学工業株式会社 Semiconductor light emitting device
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
JP5298987B2 (en) * 2009-03-17 2013-09-25 豊田合成株式会社 Light emitting device and method for manufacturing light emitting device
US8955580B2 (en) * 2009-08-14 2015-02-17 Wah Hong Industrial Corp. Use of a graphite heat-dissipation device including a plating metal layer
TW201035513A (en) * 2009-03-25 2010-10-01 Wah Hong Ind Corp Method for manufacturing heat dissipation interface device and product thereof
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US8791499B1 (en) 2009-05-27 2014-07-29 Soraa, Inc. GaN containing optical devices and method with ESD stability
US20100302789A1 (en) * 2009-05-28 2010-12-02 Qing Li LED Light Source Module and Method for Producing the Same
US9255686B2 (en) 2009-05-29 2016-02-09 Cree, Inc. Multi-lens LED-array optic system
US8860043B2 (en) * 2009-06-05 2014-10-14 Cree, Inc. Light emitting device packages, systems and methods
MX2009006022A (en) * 2009-06-05 2010-12-13 Alfredo Villafranca Quinto Light fitting for the exterior environment and public highways with leds as lighting element.
US9111778B2 (en) 2009-06-05 2015-08-18 Cree, Inc. Light emitting diode (LED) devices, systems, and methods
US8686445B1 (en) 2009-06-05 2014-04-01 Cree, Inc. Solid state lighting devices and methods
US8760060B2 (en) * 2009-07-16 2014-06-24 Prism Projection, Inc. Solid state light fixture with enhanced thermal cooling and color mixing
DE102009034082A1 (en) 2009-07-21 2011-01-27 Osram Gesellschaft mit beschränkter Haftung Optoelectronic assembly and method for producing such a unit
US8324653B1 (en) 2009-08-06 2012-12-04 Bridge Semiconductor Corporation Semiconductor chip assembly with ceramic/metal substrate
US8084780B2 (en) * 2009-08-13 2011-12-27 Semileds Optoelectronics Co. Smart integrated semiconductor light emitting system including light emitting diodes and application specific integrated circuits (ASIC)
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
US8207554B2 (en) * 2009-09-11 2012-06-26 Soraa, Inc. System and method for LED packaging
US9303861B2 (en) 2009-09-14 2016-04-05 Us Vaopto, Inc. Light emitting diode light source modules
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US9293667B2 (en) 2010-08-19 2016-03-22 Soraa, Inc. System and method for selected pump LEDs with multiple phosphors
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
KR101368906B1 (en) 2009-09-18 2014-02-28 소라, 인코포레이티드 Power light emitting diode and method with current density operation
WO2011037655A1 (en) * 2009-09-24 2011-03-31 Molex Incorporated Light module system
US8593040B2 (en) 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
CN104075294B (en) 2009-10-12 2017-04-12 莫列斯公司 Light-emitting module system
US8575642B1 (en) 2009-10-30 2013-11-05 Soraa, Inc. Optical devices having reflection mode wavelength material
KR100962706B1 (en) 2009-11-27 2010-06-15 주식회사 테크엔 Manufacture method of the large illuminations with power led
US8511851B2 (en) 2009-12-21 2013-08-20 Cree, Inc. High CRI adjustable color temperature lighting devices
DE102009060781A1 (en) * 2009-12-22 2011-06-30 Automotive Lighting Reutlingen GmbH, 72762 Light module for a lighting device of a motor vehicle and lighting device with such a light module
US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8783915B2 (en) 2010-02-11 2014-07-22 Bridgelux, Inc. Surface-textured encapsulations for use with light emitting diodes
JP2011238367A (en) * 2010-05-06 2011-11-24 Funai Electric Co Ltd Light source mounting structure of plane light-emitting device
US20110279981A1 (en) * 2010-05-17 2011-11-17 Alex Horng Heat Dissipating Assembly
EP2388239B1 (en) 2010-05-20 2017-02-15 Draka Comteq B.V. Curing apparatus employing angled UV-LEDs
US8871311B2 (en) 2010-06-03 2014-10-28 Draka Comteq, B.V. Curing method employing UV sources that emit differing ranges of UV radiation
US8293551B2 (en) 2010-06-18 2012-10-23 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8648359B2 (en) 2010-06-28 2014-02-11 Cree, Inc. Light emitting devices and methods
US8269244B2 (en) * 2010-06-28 2012-09-18 Cree, Inc. LED package with efficient, isolated thermal path
USD643819S1 (en) 2010-07-16 2011-08-23 Cree, Inc. Package for light emitting diode (LED) lighting
DE102010033093A1 (en) * 2010-08-02 2012-02-02 Osram Opto Semiconductors Gmbh Optoelectronic light module and vehicle headlamp
EP2418183B1 (en) 2010-08-10 2018-07-25 Draka Comteq B.V. Method for curing coated glass fibres providing increased UVLED intensitiy
FR2966286B1 (en) * 2010-10-14 2013-06-14 Sgame COMPONENT FOR ELECTROLUMINESCENT DIODES, IN PARTICULAR POWER
JP2012094661A (en) * 2010-10-26 2012-05-17 Toshiba Lighting & Technology Corp Light-emitting device and lighting device
KR101049698B1 (en) * 2010-11-02 2011-07-15 한국세라믹기술원 Led array module and manufacturing method thereof
US8541951B1 (en) 2010-11-17 2013-09-24 Soraa, Inc. High temperature LED system using an AC power source
US8896235B1 (en) 2010-11-17 2014-11-25 Soraa, Inc. High temperature LED system using an AC power source
USD679842S1 (en) 2011-01-03 2013-04-09 Cree, Inc. High brightness LED package
US8772817B2 (en) 2010-12-22 2014-07-08 Cree, Inc. Electronic device submounts including substrates with thermally conductive vias
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
TW201251140A (en) 2011-01-31 2012-12-16 Cree Inc High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion
US9786811B2 (en) 2011-02-04 2017-10-10 Cree, Inc. Tilted emission LED array
CN103348496A (en) 2011-02-07 2013-10-09 克利公司 Components and methods for light emitting diode (LED) lighting
US9006770B2 (en) * 2011-05-18 2015-04-14 Tsmc Solid State Lighting Ltd. Light emitting diode carrier
US10842016B2 (en) 2011-07-06 2020-11-17 Cree, Inc. Compact optically efficient solid state light source with integrated thermal management
USD700584S1 (en) 2011-07-06 2014-03-04 Cree, Inc. LED component
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
CN102299080A (en) * 2011-08-29 2011-12-28 深南电路有限公司 Substrate and processing method thereof
US9488324B2 (en) 2011-09-02 2016-11-08 Soraa, Inc. Accessories for LED lamp systems
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
US10408429B2 (en) 2012-02-29 2019-09-10 Ideal Industries Lighting Llc Lens for preferential-side distribution
US9541258B2 (en) 2012-02-29 2017-01-10 Cree, Inc. Lens for wide lateral-angle distribution
US9541257B2 (en) 2012-02-29 2017-01-10 Cree, Inc. Lens for primarily-elongate light distribution
EP2823515A4 (en) 2012-03-06 2015-08-19 Soraa Inc Light emitting diodes with low refractive index material layers to reduce light guiding effects
FR2988910B1 (en) * 2012-03-28 2014-12-26 Commissariat Energie Atomique LOW-RTH LED COMPONENT WITH DISSOCATED ELECTRIC AND THERMAL WAYS
US8985794B1 (en) 2012-04-17 2015-03-24 Soraa, Inc. Providing remote blue phosphors in an LED lamp
CN102637804A (en) * 2012-04-23 2012-08-15 木林森股份有限公司 Inversion structure for bonding-free LED (Light Emitting Diode) chip
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
USD697664S1 (en) 2012-05-07 2014-01-14 Cree, Inc. LED lens
US8971368B1 (en) 2012-08-16 2015-03-03 Soraa Laser Diode, Inc. Laser devices having a gallium and nitrogen containing semipolar surface orientation
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US8802471B1 (en) 2012-12-21 2014-08-12 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9761763B2 (en) 2012-12-21 2017-09-12 Soraa, Inc. Dense-luminescent-materials-coated violet LEDs
DE102013100470A1 (en) * 2013-01-17 2014-07-17 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip
USD718490S1 (en) 2013-03-15 2014-11-25 Cree, Inc. LED lens
US9326338B2 (en) * 2013-06-21 2016-04-26 Micron Technology, Inc. Multi-junction solid state transducer devices for direct AC power and associated systems and methods
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9299899B2 (en) 2013-07-23 2016-03-29 Grote Industries, Llc Flexible lighting device having unobtrusive conductive layers
TWI518955B (en) * 2013-08-30 2016-01-21 柏友照明科技股份有限公司 Multichip package structure
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
US9523479B2 (en) 2014-01-03 2016-12-20 Cree, Inc. LED lens
US10024530B2 (en) * 2014-07-03 2018-07-17 Sansi Led Lighting Inc. Lighting device and LED luminaire
FR3025859A1 (en) * 2014-09-15 2016-03-18 Valeo Vision LUMINOUS MODULE SUBSTRATE WITH METALLIC TRACK FOR SHIELDING, THERMAL SCREEN AND / OR OPTICAL REFLECTOR
US9648750B2 (en) 2014-09-30 2017-05-09 Rsm Electron Power, Inc. Light emitting diode (LED) assembly and flexible circuit board with improved thermal conductivity
DE102014220188B3 (en) * 2014-10-06 2016-02-11 E.G.O. Elektro-Gerätebau GmbH display device
US10516084B2 (en) 2014-10-31 2019-12-24 eLux, Inc. Encapsulated fluid assembly emissive elements
US10309589B2 (en) * 2016-05-13 2019-06-04 Rohinni, LLC Light vectoring apparatus
US10468566B2 (en) 2017-04-10 2019-11-05 Ideal Industries Lighting Llc Hybrid lens for controlled light distribution
US10319705B2 (en) * 2017-10-20 2019-06-11 Facebook Technologies, Llc Elastomeric layer fabrication for light emitting diodes
JP7077202B2 (en) * 2017-10-26 2022-05-30 晶元光電股▲ふん▼有限公司 Light emitting device
CN111148353B (en) * 2019-12-30 2021-04-20 乐健科技(珠海)有限公司 Preparation method of circuit board with copper-based heat sink
USD933881S1 (en) 2020-03-16 2021-10-19 Hgci, Inc. Light fixture having heat sink
USD933872S1 (en) 2020-03-16 2021-10-19 Hgci, Inc. Light fixture
US11032976B1 (en) 2020-03-16 2021-06-15 Hgci, Inc. Light fixture for indoor grow application and components thereof
TWI790671B (en) * 2021-07-04 2023-01-21 郭明騰 Light source module

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6045240A (en) * 1996-06-27 2000-04-04 Relume Corporation LED lamp assembly with means to conduct heat away from the LEDS
US6133589A (en) 1999-06-08 2000-10-17 Lumileds Lighting, U.S., Llc AlGaInN-based LED having thick epitaxial layer for improved light extraction
US6428189B1 (en) * 2000-03-31 2002-08-06 Relume Corporation L.E.D. thermal management

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9666772B2 (en) 2003-04-30 2017-05-30 Cree, Inc. High powered light emitter packages with compact optics
US8901585B2 (en) 2003-05-01 2014-12-02 Cree, Inc. Multiple component solid state white light
WO2004102685A1 (en) * 2003-05-14 2004-11-25 Nano Packaging Technology, Inc. Light emitting device, package structure thereof and manufacturing method thereof
JP2005107348A (en) * 2003-10-01 2005-04-21 Semiconductor Energy Lab Co Ltd Projector
JP4712293B2 (en) * 2003-10-01 2011-06-29 株式会社半導体エネルギー研究所 projector
KR101116723B1 (en) 2003-11-07 2012-03-08 트리도닉 예너스도르프 게엠베하 Light-emitting diode arrangement comprising a heat-dissipating plate
JP2005175427A (en) * 2003-12-05 2005-06-30 Internatl Resistive Co Of Texas Lp Light emitting assembly with support for heat dissipation
KR101265845B1 (en) 2003-12-05 2013-05-21 인터네셔널 리지스티브 컴퍼니 오브 텍사스, 엘.피. Light emitting assembly with heat dissipating support
JP2007514320A (en) * 2003-12-09 2007-05-31 ゲルコアー リミテッド ライアビリティ カンパニー Surface mount light emitting chip package
US7309145B2 (en) 2004-01-13 2007-12-18 Seiko Epson Corporation Light source apparatus and projection display apparatus
US8617909B2 (en) 2004-07-02 2013-12-31 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP2008508706A (en) * 2004-07-27 2008-03-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Light emitting diode assembly
US7436000B2 (en) 2005-01-26 2008-10-14 Samsung Electronics Co., Ltd. Two dimensional light source using light emitting diode and liquid crystal display device using the two dimensional light source
US7932970B2 (en) 2005-01-26 2011-04-26 Samsung Electronics Co., Ltd. Two dimensional light source using light emitting diode and liquid crystal display device using the two dimensional light source
US8368846B2 (en) 2005-01-26 2013-02-05 Samsung Display Co., Ltd. Two dimensional light source using light emitting diode and liquid crystal display device using the two dimensional light source
KR101232505B1 (en) * 2005-06-30 2013-02-12 엘지디스플레이 주식회사 Method of fabrication light emission diode package and backlight unit and liquid crystal display device
JP2007013143A (en) * 2005-06-30 2007-01-18 Lg Phillips Lcd Co Ltd Manufacturing method of light emitting diode package, backlight unit, and liquid crystal display
JP2007116128A (en) * 2005-09-20 2007-05-10 Matsushita Electric Works Ltd Light emitting device
JP2007116122A (en) * 2005-09-20 2007-05-10 Matsushita Electric Works Ltd Light emitting device
JP2007116129A (en) * 2005-09-20 2007-05-10 Matsushita Electric Works Ltd Light emitting device
US8858004B2 (en) 2005-12-22 2014-10-14 Cree, Inc. Lighting device
JP2007234886A (en) * 2006-03-01 2007-09-13 Compal Communications Inc Electronic element assembly with thermal dissipation constitution
US8487337B2 (en) 2006-04-24 2013-07-16 Cree, Inc. Side view surface mount LED
JP2009130299A (en) * 2007-11-27 2009-06-11 Panasonic Electric Works Co Ltd Light emitting device
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
WO2012064405A1 (en) * 2010-11-08 2012-05-18 Bridgelux, Inc. Led-based light source utilizing asymmetric conductors
JP2015513226A (en) * 2012-04-02 2015-04-30 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH Light emitting semiconductor component and method for manufacturing light emitting semiconductor component
US9954150B2 (en) 2012-04-02 2018-04-24 Osram Opto Semiconductors Gmbh Light-emitting semiconductor component and method for producing a light-emitting semiconductor component
KR20140042193A (en) * 2012-09-28 2014-04-07 제너럴 일렉트릭 캄파니 Overlay circuit structure for interconnecting light emitting semiconductors
KR101995538B1 (en) * 2012-09-28 2019-07-02 제너럴 일렉트릭 캄파니 Overlay circuit structure for interconnecting light emitting semiconductors
US10615324B2 (en) 2013-06-14 2020-04-07 Cree Huizhou Solid State Lighting Company Limited Tiny 6 pin side view surface mount LED
KR20190079598A (en) * 2019-06-26 2019-07-05 제너럴 일렉트릭 캄파니 Overlay circuit structure for interconnecting light emitting semiconductors
KR102085649B1 (en) * 2019-06-26 2020-03-06 제너럴 일렉트릭 캄파니 Overlay circuit structure for interconnecting light emitting semiconductors

Also Published As

Publication number Publication date
DE10246892A1 (en) 2003-04-24
JP4330863B2 (en) 2009-09-16
DE10246892B4 (en) 2020-03-26
US6498355B1 (en) 2002-12-24
TW561635B (en) 2003-11-11

Similar Documents

Publication Publication Date Title
JP4330863B2 (en) High bundle LED array
US6936855B1 (en) Bendable high flux LED array
JP4122784B2 (en) Light emitting device
US6876008B2 (en) Mount for semiconductor light emitting device
US7284882B2 (en) LED light module assembly
US7795626B2 (en) Flip chip type LED lighting device manufacturing method
US9887338B2 (en) Light emitting diode device
TWI395345B (en) Light-emitting diode lamp with low thermal resistance
JP5210433B2 (en) LED unit
KR102503462B1 (en) Mounting of LED elements on a flat carrier
JP2004342870A (en) Light emitting diode to be driven with large current
KR20100047324A (en) Light emitting diode array
KR20060134969A (en) Surface mount light emitting chip package
JP2011181576A (en) Semiconductor light-emitting element and semiconductor light-emitting device using the same
US20060289887A1 (en) Surface mount light emitting diode (LED) assembly with improved power dissipation
JP2010541219A (en) Arrangement structure with optoelectronic components
CN109314170B (en) LED metal pad configuration for optimized thermal resistance, solder reliability and SMT process yield
WO2005067063A1 (en) Arrangement with a light emitting device on a substrate
KR20170037907A (en) Light emitting device
JP2024037339A (en) Light emitting device and light emitting device module
JP2022161603A (en) light emitting device
KR101233731B1 (en) Lighting device having light emitting diode
CN116314526A (en) LED metal pad configuration for optimized thermal resistance, solder reliability and SMT process yield

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051011

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080818

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20081118

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20081121

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090218

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090518

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090617

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4330863

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120626

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130626

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term