CN102637804A - Inversion structure for bonding-free LED (Light Emitting Diode) chip - Google Patents
Inversion structure for bonding-free LED (Light Emitting Diode) chip Download PDFInfo
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- CN102637804A CN102637804A CN2012101198129A CN201210119812A CN102637804A CN 102637804 A CN102637804 A CN 102637804A CN 2012101198129 A CN2012101198129 A CN 2012101198129A CN 201210119812 A CN201210119812 A CN 201210119812A CN 102637804 A CN102637804 A CN 102637804A
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- terminal pad
- conductive path
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- led chip
- circuit
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Abstract
The invention discloses an inversion structure for a bonding-free LED (Light Emitting Diode) chip, which comprises a silicon wafer, an LED chip and a lead frame. The inversion structure is characterized in that a circuit is printed on the front surface of the silicon wafer; an anode pad and a cathode pad are arranged on the rear surface of the silicon wafer; an anode conductive path and a cathode conductive path are arranged on the silicon wafer; the circuit is respectively in electrical connection with the anode pad and the cathode pad through the anode conductive path and the cathode conductive path; an electrode corresponding to the circuit is printed on one surface of the LED chip; the electrode is electrically jointed with the circuit through a transparent conductive material; and the anode conductive path and the cathode conductive path are respectively in electrical connection with the lead frame.
Description
Technical field
The present invention relates to a kind of led chip, particularly a kind of no nation decides the led chip inverted structure.
Background technology
Positive cartridge chip is the led chip structure (as shown in Figure 5) that occurs the earliest, also is the chip structure that generally uses in the small-power chip.In this structure electrode be printed on chip 3a above, thereby chip 3a is when luminous, electrode can block the light that a part is sent, thereby has reduced the luminosity of chip 3a; And electrode communicates and need be connected by employing wire 2a with metal wire frame 1a; The just usually said nation of its connection procedure decides; Nation adopts nation to decide machine to be welded on wire (generally being spun gold) on chip electrode and the metal wire frame with ultrasonic wave, makes it to form to be electrically connected, can electrified light emitting.And nation decides process is the most important and link that goes wrong the most easily in the whole LED production link.Because it is the accurate equipment of comparison that nation decides machine, the parameter that influences product quality has more than 10 20, and parameter regulation is careless slightly, promptly has a strong impact on product quality; And the price of gold rises on the way in recent years, and it is many that the LED production cost is gone up, and how to reduce product price, also is the problem that encapsulation factory need consider.
Summary of the invention
In order to overcome the deficiency of prior art, the present invention provides a kind of no nation to decide the flip LED chips structure, thereby has reduced producting process difficulty and production cost, has improved the brightness of product.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of no nation decides the led chip inverted structure; Comprise silicon chip, led chip and lead frame; It is characterized in that: said silicon chip front is printed with circuit, and the silicon chip reverse side is provided with positive terminal pad and negative terminal pad, and said silicon chip is provided with anodal conductive path and negative pole conductive path; Said circuit electrically connects with positive terminal pad and negative terminal pad respectively through anodal conductive path and negative pole conductive path; Said led chip simultaneously is printed with and the circuit corresponding electrode, and this electrode electrically combines with circuit through transparent conductive material, and said positive terminal pad and negative terminal pad electrically connect with lead frame respectively.
Said anodal conductive path comprises first intercommunicating pore that is oppositely arranged, and the negative pole conductive path comprises second intercommunicating pore that is oppositely arranged, and deposits conducting metal in first intercommunicating pore and second intercommunicating pore.
Said positive terminal pad and negative terminal pad are respectively through conductive silver glue or tin cream and lead frame electric connection.
Said conductive silver glue or tin cream need pass through high temperature sintering.
Said silicon chip reverse side be provided with silicon chip paste mutually heat sink.
The invention has the beneficial effects as follows: compare existing product, have following advantage:
One, during encapsulation, as long as between the corresponding positive and negative electrode pad of the positive and negative electrode of lead frame and silicon chip, put conductive silver glue or tin cream respectively; High temperature sintering then; Can accomplish the electric connection of lead frame and silicon chip, thereby electrically connect with led chip, it is fixed to need not nation again;
Two, because chip upside-down mounting from back side illuminated, has been lacked blocking of chip electrode, the positive cartridge chip of brightness ratio promotes the brightness of 10-15%;
Three, heat that chip sends is earlier through silicon chip, and then is delivered to heat sinkly, and the secondary heat radiation improves radiating efficiency.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is further specified:
Fig. 1 is the electrode surface front view of led chip of the present invention;
Fig. 2 is the positive front view of silicon chip;
Fig. 3 is the front view of silicon chip reverse side;
Fig. 4 is the application sketch map that the present invention assembles;
Fig. 5 is the assembling sketch map of mill run.
Embodiment
Referring to figs. 1 through Fig. 4; The invention discloses a kind of no nation and decide the led chip inverted structure, comprise silicon chip 1, led chip 2 and lead frame 9, silicon chip 1 front is printed with circuit 3; And silicon chip 1 reverse side is provided with positive terminal pad 4 and negative terminal pad 5; Said silicon chip 1 is provided with anodal conductive path 7 and negative pole conductive path 6, and said circuit 3 electrically connects with positive terminal pad 4 and negative terminal pad 5 respectively through anodal conductive path 7 and negative pole conductive path 6, and said led chip 2 one sides are printed with and circuit 3 corresponding electrode 8; This electrode 8 electrically combines with circuit 3 through transparent conductive material, and said positive terminal pad 4 and negative terminal pad 5 electrically connect with lead frame 9 respectively.
As shown in the figure, silicon chip 1 front is printed with circuit 3, and silicon chip 1 back face printing has positive terminal pad 4 and negative terminal pad 5; Have through hole in silicon chip 1 specific place then, in this specific embodiment, through hole has four; Be positioned at the Si Jiaochu of silicon chip 1, it has comprised two first intercommunicating pores and two second intercommunicating pores, turmeric or other metals in first intercommunicating pore and second intercommunicating pore; Constitute anodal conductive path and negative pole conductive path respectively; Thereby the circuit on two sides is communicated with, wherein anodal conductive path electrical communication positive terminal pad 4 and circuit 3, negative pole conductive path electrical communication negative terminal pad 5 and circuit 3.Scribble transparent conductive material on the electrode 8 of led chip, during encapsulation, turn chip, the circuit 3 that the electrode of chip 8 is aimed on the silicon chips 1, combining through transparent conductive material electrically conducts.Corresponding in the corresponding electrode 8 is that the pattern of expression electrode 8 is identical with part pattern or whole pattern of circuit 3; Thereby led chip can not produce the dark space behind electrified light emitting; In this specific embodiment, the pattern of the main part of circuit 3 is identical with the pattern of electrode 8.In addition, the silicon chip reverse side be provided with silicon chip paste mutually heat sink 10, thereby improved whole radiating effect.
Said positive terminal pad 4 and negative terminal pad 5 are respectively through conductive silver glue or tin cream and lead frame 9 electric connections.Conductive silver glue or tin cream need pass through high temperature sintering.
Above-mentionedly just preferred embodiments more of the present invention are illustrated and describe, but execution mode of the present invention is not restricted to the described embodiments,, all should belong to protection scope of the present invention as long as it reaches technique effect of the present invention with essentially identical means.
Claims (5)
1. a no nation decides the led chip inverted structure; Comprise silicon chip, led chip and lead frame; It is characterized in that: said silicon chip front is printed with circuit, and the silicon chip reverse side is provided with positive terminal pad and negative terminal pad, and said silicon chip is provided with anodal conductive path and negative pole conductive path; Said circuit electrically connects with positive terminal pad and negative terminal pad respectively through anodal conductive path and negative pole conductive path; Said led chip simultaneously is printed with and the circuit corresponding electrode, and this electrode electrically combines with circuit through transparent conductive material, and said positive terminal pad and negative terminal pad electrically connect with lead frame respectively.
2. a kind of no nation according to claim 1 decides the led chip inverted structure; It is characterized in that: said anodal conductive path comprises first intercommunicating pore that is oppositely arranged; The negative pole conductive path comprises second intercommunicating pore that is oppositely arranged, and deposits conducting metal in first intercommunicating pore and second intercommunicating pore.
3. a kind of no nation according to claim 1 decides the led chip inverted structure, it is characterized in that: said positive terminal pad and negative terminal pad are respectively through conductive silver glue or tin cream and lead frame electric connection.
4. a kind of no nation according to claim 3 decides the led chip inverted structure, and it is characterized in that: said conductive silver glue or tin cream need pass through high temperature sintering.
5. a kind of no nation according to claim 1 decides the led chip inverted structure, it is characterized in that: said silicon chip reverse side be provided with silicon chip paste mutually heat sink.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101198129A CN102637804A (en) | 2012-04-23 | 2012-04-23 | Inversion structure for bonding-free LED (Light Emitting Diode) chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101198129A CN102637804A (en) | 2012-04-23 | 2012-04-23 | Inversion structure for bonding-free LED (Light Emitting Diode) chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102637804A true CN102637804A (en) | 2012-08-15 |
Family
ID=46622120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101198129A Pending CN102637804A (en) | 2012-04-23 | 2012-04-23 | Inversion structure for bonding-free LED (Light Emitting Diode) chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102637804A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6498355B1 (en) * | 2001-10-09 | 2002-12-24 | Lumileds Lighting, U.S., Llc | High flux LED array |
| CN1977394A (en) * | 2004-06-29 | 2007-06-06 | 皇家飞利浦电子股份有限公司 | Light emitting diode module |
| CN101036238A (en) * | 2004-10-04 | 2007-09-12 | 株式会社东芝 | Light emitting device, lighting equipment or liquid crystal display device using such light emitting device |
-
2012
- 2012-04-23 CN CN2012101198129A patent/CN102637804A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6498355B1 (en) * | 2001-10-09 | 2002-12-24 | Lumileds Lighting, U.S., Llc | High flux LED array |
| CN1977394A (en) * | 2004-06-29 | 2007-06-06 | 皇家飞利浦电子股份有限公司 | Light emitting diode module |
| CN101036238A (en) * | 2004-10-04 | 2007-09-12 | 株式会社东芝 | Light emitting device, lighting equipment or liquid crystal display device using such light emitting device |
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| PB01 | Publication | ||
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| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120815 |