CN102299080A - Substrate and processing method thereof - Google Patents
Substrate and processing method thereof Download PDFInfo
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- CN102299080A CN102299080A CN2011102511188A CN201110251118A CN102299080A CN 102299080 A CN102299080 A CN 102299080A CN 2011102511188 A CN2011102511188 A CN 2011102511188A CN 201110251118 A CN201110251118 A CN 201110251118A CN 102299080 A CN102299080 A CN 102299080A
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- metal derby
- substrate
- groove
- column construction
- processing method
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The embodiment of the invention discloses a substrate and a processing method thereof. The method for processing the substrate comprises the following steps of: processing a groove on an insulating medium layer of the substrate, wherein the substrate comprises at least two layers of structures; and embedding a metal block comprising a cylindrical structure in the groove, wherein one end of the metal block comprising the cylindrical structure is inserted into the groove, and the metal block comprising the cylindrical structure serves as a chip base. By the method in the embodiment of the invention, the radiating efficiency of a semiconductor can be effectively improved, and the using reliability of the semiconductor is improved; therefore, the service life of the semiconductor is prolonged.
Description
Technical field
The present invention relates to the circuit board technology field, relate in particular to a kind of substrate and processing method thereof.
Background technology
Along with the development of information-intensive society, the information processing capacity of various electronic equipments grows with each passing day, and is growing for the demand of high frequency, high speed transmission of signals.Semiconductor device is as the information processing core parts, and its heat dissipation problem becomes the problem of a key, directly influences the reliability and the useful life of electronic equipment.The effect that connects internal integrated circuit chip bonding point and external electrical establishment is not only played in the encapsulation of semi-conductor electronic device, also for integrated circuit provides a reliable and stable operational environment, integrated circuit (IC) chip is played the effect of machinery or environmental protection.Therefore, integrated circuit encapsulation should have stronger mechanical performance, good electric property, heat dispersion and chemical stability.The good and bad relation of the quality of package quality and the overall performance of integrated circuit is very big.
Base plate for packaging is highdensity printed circuit board, can be chip effects such as electrical connection, protection, support, heat radiation, assembling are provided, and to realize many pinizations, dwindles the encapsulating products volume, improves the purpose of electrical property and heat radiation or multi-chip moduleization.The encapsulation of conventional semiconductor electronic device is to stick bare chip on base plate for packaging, by lead-in wire bare chip is connected with substrate, realizes electric function.
In research and practice process to prior art, the inventor finds that there is following problem in prior art:
Because the reliability of bare chip depends on bare chip residing time under hot environment to a great extent, when bare chip is in hot environment following time for a long time, its reliability will be affected.In the prior art, the do not dispel the heat consideration of angle of base plate for packaging, only rely on the heat-transfer capability of base plate for packaging itself to dispel the heat, and the base plate for packaging material mostly is epoxy resin, its thermal transmission coefficient is little, the heat of semiconductor device generation can not distribute timely and effectively like this, thereby has reduced the reliability that semiconductor uses, and has influenced semi-conductive useful life.
Summary of the invention
The embodiment of the invention provides a kind of substrate and processing method thereof, has improved semi-conductive radiating efficiency effectively, has improved the reliability that semiconductor uses, thereby has prolonged semi-conductive useful life.
The present invention is achieved by the following technical solutions:
A kind of base plate processing method, may further comprise the steps: on the insulating medium layer of substrate, process groove, described substrate comprises double-layer structure at least, in described groove, embed the metal derby that comprises column construction, wherein, a described end that comprises the metal derby column construction of column construction is inserted in the described groove, and the described metal derby of column construction that comprises is as chip pad.
A kind of substrate, comprise double-layer structure at least, the insulating medium layer of described substrate is provided with groove, embed in the described groove metal derby that comprises column construction is arranged, wherein, a described end that comprises the metal derby column construction of column construction is inserted in the described groove, and the described metal derby of column construction that comprises is as chip pad.
Compared with prior art, disclosed a kind of substrate of the embodiment of the invention and processing method thereof, embed metal derby by the position that in base plate for packaging, will paste bare chip, metal derby is as chip pad, utilize the good heat conductive performance of metal derby, in time the heat that semiconductor device work is produced distributes, and improves semi-conductive radiating efficiency effectively, improve the reliability that semiconductor uses, thereby prolonged semi-conductive useful life.
Description of drawings
Fig. 1 is the flow chart of the base plate processing method that the embodiment of the invention provided;
Fig. 2 is the structural representation of the substrate that the embodiment of the invention provided;
Fig. 3 processes the structural representation of the substrate behind the groove for the embodiment of the invention provided;
Fig. 4 is the structural representation of the step-like metal derby that the embodiment of the invention provided;
Fig. 5 embedded the structural representation of the substrate of groove for the embodiment of the invention provides with step-like metal derby;
Fig. 6 is processed into the structural representation of the substrate of several metal derbies that comprise column construction for the step-like metal derby that will embed groove that the embodiment of the invention provided;
The structural representation of the substrate of Fig. 7 after for the exposed pad that the embodiment of the invention provided;
Fig. 8 is other structural representation of the metal derby that comprises column construction that the embodiment of the invention provided;
Fig. 9 is the part tangent plane schematic diagram of column construction.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that is obtained under the creative work prerequisite.
The embodiment of the invention provides a kind of substrate and processing method thereof, improves semi-conductive radiating efficiency effectively, has improved the reliability that semiconductor uses, thereby has prolonged semi-conductive useful life.
See also Fig. 1-9, Fig. 1 is the flow chart of the base plate processing method that the embodiment of the invention provided; Fig. 2 is the structural representation of the substrate that the embodiment of the invention provided; Fig. 3 processes the structural representation of the substrate behind the groove for the embodiment of the invention provided; Fig. 4 is the structural representation of the step-like metal derby that the embodiment of the invention provided; Fig. 5 embedded the structural representation of the substrate of groove for the embodiment of the invention provides with step-like metal derby; Fig. 6 is processed into the structural representation of the substrate of several metal derbies that comprise column construction for the step-like metal derby that will embed groove that the embodiment of the invention provided; The structural representation of the substrate of Fig. 7 after for the exposed pad that the embodiment of the invention provided; Fig. 8 is other structural representation of the metal derby that comprises column construction that the embodiment of the invention provided; Fig. 9 is the part tangent plane schematic diagram of column construction.
See also Fig. 1-9, a kind of base plate processing method that the embodiment of the invention provides may further comprise the steps:
101, on the insulating medium layer of substrate, process groove;
Wherein, substrate comprises double-layer structure at least;
For example shown in Figure 2, substrate can comprise sandwich layer, the fluting layer.Wherein, the insulating barrier 201 in the middle of sandwich layer comprises and the line layer 202 on its two sides, the fluting layer comprises insulating medium layer 203 and the line layer 204 that is provided with thereon.In addition, by the line conduction (not marking among the figure) between metallized through hole realization layer and the layer.
Preferably, insulating medium layer 203 is a prepreg.Be understandable that under the situation that does not influence enforcement, insulating medium layer 203 also can be other dielectric here.
Preferably, mill deeply or be laser-ablated on the insulating medium layer 203 of substrate by boring or milling machine control and process groove 301, need to prove, do not limit by which kind of method so long as can on the insulating medium layer 203 of substrate, process groove 301 herein.
Wherein, mainly be that four-layer structure is that example describes in the present embodiment with the substrate, certainly, substrate also can comprise four-layer structure at least.
102, in groove, embed the metal derby that comprises column construction;
For example shown in Figure 6, an end that comprises metal derby 501 column constructions of column construction is inserted in the groove 301, as chip pad;
Wherein, embed the metal derby 501 that comprises column construction in groove 301, an end that wherein comprises metal derby 501 column constructions of column construction is inserted in the groove 301, as chip pad, plays thermolysis, and the position of chip is pasted in the position on substrate.Need to prove, here the size of groove 301 and shape and to comprise the size and the shape of an end of metal derby 501 column constructions of column construction suitable.
Wherein, can be inserted into (for example shown in Figure 5) in the groove 301 by the end that lamination will comprise metal derby 501 column constructions of column construction, insulating medium layer 203 has not only played the effect that insulation has also been played in bonding effect.Wherein, the insulating medium layer 203 here is preferably prepreg.
Preferably, can there be dual mode in groove 301, to embed the metal derby 501 that comprises column construction.
Mode one may further comprise the steps: process step-like metal derby 401, metal derby 402 (for example shown in Figure 4), the step-like metal derby 401 and the metal derby 402 that process are embedded groove 301 (for example shown in Figure 5), step-like metal derby 401, the metal derby 402 that embeds groove 301 is processed into several metal derbies that comprise column construction 501 (for example shown in Figure 6).
Mode two may further comprise the steps: process the metal derby 501 that comprises column construction, the metal derby that comprises column construction 501 that processes is embedded into (for example shown in Figure 6) in the groove 301.
Preferably, metal derby is a copper billet, be understandable that, so long as the good metal of thermal conductivity can be embedded in the groove 301 as metal derby, but the general copper billet that adopts is embedded in the groove 301 as metal derby in the production process of printed circuit board, copper billet can be well compatible with the used liquid medicine of printed circuit board assembly line as the heat-conducting block body, so preferred copper billet is as the metal derby that embeds in the groove 301.Need to prove that the thickness that embeds the copper billet in the groove 301 here not only is confined to the copper billet that thickness surpasses 3OZ, also comprise when the chip thickness attenuate is 0.05mm that thickness is the above copper billet of 0.05mm.
Preferably, mill deeply or be laser-ablated on the insulating medium layer 203 of substrate by boring or milling machine control and process groove 301.Be understandable that, can adopt, do not limit herein so long as can on the insulating medium layer 203 of substrate, process any method of groove 301.
Preferably, mill deeply by etching or milling machine control and to process step-like metal derby 401, metal derby 402, be understandable that, can adopt, do not limit herein so long as can process other method of step-like metal derby 401, metal derby 402.For example, the combination that can adopt etching and milling machine control to mill two kinds of methods deeply processes step-like metal derby 401, metal derby 402.
After one end that will comprise metal derby 501 column constructions of column construction is inserted in the groove 301, milling the circuitous pattern that on substrate, processes needs deeply by etching or milling machine control, at last by laser drilling or control dark groove milling and expose on the insulating medium layer 203 corresponding pad 601 (for example shown in Figure 7), the pad with on the chip of pad 601 correspondences of exposing is connected by metal wire, to realize electric function.
Need to prove, the metal derby 501 that comprises column construction not only is confined to structure shown in Figure 6, can also be structure as shown in Figure 8, and the column construction here can be cylinder, structures such as prism, its sectional drawing can be understandable that structure shown in Figure 9 only is the part sectional drawing of column construction for structure as shown in Figure 9.
Mainly be that four-layer structure is that example describes in the present embodiment with the substrate, when board structure surpasses four layers, it equally also is the principle of utilizing in the present embodiment, on the outer layer insulation dielectric layer of substrate, process groove, in groove, insert the metal derby that comprises column construction then, as chip pad.
Referring to Fig. 6, the embodiment of the invention provides a kind of substrate, this substrate comprises double-layer structure at least, on the insulating medium layer 203 of substrate, be provided with groove 301, in groove 301, embed the metal derby 501 that comprises column construction is arranged, wherein, an end that comprises metal derby 501 column constructions of column construction is inserted in the groove 301, and the metal derby 501 that comprises column construction is as chip pad.
Wherein, a kind of substrate that present embodiment provided is identical or similar with substrate in a kind of base plate processing method that the foregoing description is provided.
In sum, the embodiment of the invention provides a kind of substrate and processing method thereof, embed metal derby by the position that in base plate for packaging, will paste bare chip, metal derby is as chip pad, utilize the good heat conductive performance of metal derby, in time the heat that semiconductor device work is produced distributes, and improves semi-conductive radiating efficiency effectively, improve the reliability that semiconductor uses, thereby prolonged semi-conductive useful life.
More than a kind of substrate provided by the present invention and processing method thereof are described in detail, for one of ordinary skill in the art, thought according to the embodiment of the invention, part in specific embodiments and applications all can change, in sum, this description should not be construed as limitation of the present invention.
Claims (10)
1. a base plate processing method is characterized in that, may further comprise the steps:
Process groove on the insulating medium layer of substrate, described substrate comprises double-layer structure at least;
Embed the metal derby that comprises column construction in described groove, wherein, a described end that comprises the metal derby column construction of column construction is inserted in the described groove, and the described metal derby of column construction that comprises is as chip pad.
2. processing method according to claim 1 is characterized in that, described insulating medium layer is a prepreg.
3. processing method according to claim 1 is characterized in that, the described metal derby that comprises column construction that embeds in described groove comprises:
Process step-like metal derby;
The described step-like metal derby that processes is embedded described groove;
The step-like metal derby that embeds described groove is processed into the metal derby that several comprise column construction.
4. processing method according to claim 1 is characterized in that, the described metal derby that comprises column construction that embeds in described groove comprises:
Process the metal derby that comprises column construction;
The described metal derby that comprises column construction that processes is embedded in the described groove.
5. according to each described processing method of claim 1 to 4, it is characterized in that described metal derby is a copper billet.
6. according to each described processing method of claim 1 to 4, it is characterized in that the described groove specific implementation that processes is on the insulating medium layer of substrate:
Mill deeply or be laser-ablated on the insulating medium layer of described substrate by boring or milling machine control and process groove.
7. processing method according to claim 3 is characterized in that, describedly processes step-like metal derby specific implementation and is:
Mill deeply by etching or milling machine control and to process described step-like metal derby.
8. processing method according to claim 1 is characterized in that,
Described substrate comprises four-layer structure at least.
9. a substrate is characterized in that, described substrate comprises double-layer structure at least;
The insulating medium layer of described substrate is provided with groove, embed in the described groove metal derby that comprises column construction is arranged, wherein, a described end that comprises the metal derby column construction of column construction is inserted in the described groove, and the described metal derby of column construction that comprises is as chip pad.
10. substrate according to claim 9 is characterized in that described substrate comprises four-layer structure at least.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102511188A CN102299080A (en) | 2011-08-29 | 2011-08-29 | Substrate and processing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102511188A CN102299080A (en) | 2011-08-29 | 2011-08-29 | Substrate and processing method thereof |
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| CN102299080A true CN102299080A (en) | 2011-12-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011102511188A Pending CN102299080A (en) | 2011-08-29 | 2011-08-29 | Substrate and processing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104625688A (en) * | 2014-12-24 | 2015-05-20 | 东莞市中电爱华电子有限公司 | Method for patting and pressing copper block embedded in electroplated aluminum substrate |
| CN108430172A (en) * | 2018-02-28 | 2018-08-21 | 维沃移动通信有限公司 | A kind of preparation method and circuit board of circuit board |
| CN112045329A (en) * | 2020-09-07 | 2020-12-08 | 中国电子科技集团公司第二十四研究所 | Flip-chip bonding process method for ball mounting on metal substrate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002162626A (en) * | 2000-11-22 | 2002-06-07 | Sony Corp | Heat radiating device of light source for liquid crystal display and its manufacturing method |
| US6498355B1 (en) * | 2001-10-09 | 2002-12-24 | Lumileds Lighting, U.S., Llc | High flux LED array |
| CN1795567A (en) * | 2003-05-26 | 2006-06-28 | 松下电工株式会社 | Light-emitting device |
| CN101009974A (en) * | 2006-01-23 | 2007-08-01 | 高陆股份有限公司 | Heat radiation substrate |
| CN101241864A (en) * | 2007-02-09 | 2008-08-13 | 矽品精密工业股份有限公司 | Inductance semiconductor encapsulation part and its making method |
-
2011
- 2011-08-29 CN CN2011102511188A patent/CN102299080A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002162626A (en) * | 2000-11-22 | 2002-06-07 | Sony Corp | Heat radiating device of light source for liquid crystal display and its manufacturing method |
| US6498355B1 (en) * | 2001-10-09 | 2002-12-24 | Lumileds Lighting, U.S., Llc | High flux LED array |
| CN1795567A (en) * | 2003-05-26 | 2006-06-28 | 松下电工株式会社 | Light-emitting device |
| CN101009974A (en) * | 2006-01-23 | 2007-08-01 | 高陆股份有限公司 | Heat radiation substrate |
| CN101241864A (en) * | 2007-02-09 | 2008-08-13 | 矽品精密工业股份有限公司 | Inductance semiconductor encapsulation part and its making method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104625688A (en) * | 2014-12-24 | 2015-05-20 | 东莞市中电爱华电子有限公司 | Method for patting and pressing copper block embedded in electroplated aluminum substrate |
| CN108430172A (en) * | 2018-02-28 | 2018-08-21 | 维沃移动通信有限公司 | A kind of preparation method and circuit board of circuit board |
| CN112045329A (en) * | 2020-09-07 | 2020-12-08 | 中国电子科技集团公司第二十四研究所 | Flip-chip bonding process method for ball mounting on metal substrate |
| CN112045329B (en) * | 2020-09-07 | 2022-03-11 | 中国电子科技集团公司第二十四研究所 | Flip-chip bonding process method for ball mounting on metal substrate |
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Application publication date: 20111228 |