JP2003115638A5 - - Google Patents

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Publication number
JP2003115638A5
JP2003115638A5 JP2002213798A JP2002213798A JP2003115638A5 JP 2003115638 A5 JP2003115638 A5 JP 2003115638A5 JP 2002213798 A JP2002213798 A JP 2002213798A JP 2002213798 A JP2002213798 A JP 2002213798A JP 2003115638 A5 JP2003115638 A5 JP 2003115638A5
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JP
Japan
Prior art keywords
active region
semiconductor laser
substrate
laser according
length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002213798A
Other languages
English (en)
Japanese (ja)
Other versions
JP4335500B2 (ja
JP2003115638A (ja
Filing date
Publication date
Priority claimed from EP01306520A external-priority patent/EP1282208A1/en
Application filed filed Critical
Publication of JP2003115638A publication Critical patent/JP2003115638A/ja
Publication of JP2003115638A5 publication Critical patent/JP2003115638A5/ja
Application granted granted Critical
Publication of JP4335500B2 publication Critical patent/JP4335500B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2002213798A 2001-07-30 2002-07-23 半導体レーザおよびその製造方法 Expired - Fee Related JP4335500B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01306520A EP1282208A1 (en) 2001-07-30 2001-07-30 Semiconductor laser structure and method of manufacturing same
EP01306520.6 2001-07-30

Publications (3)

Publication Number Publication Date
JP2003115638A JP2003115638A (ja) 2003-04-18
JP2003115638A5 true JP2003115638A5 (enExample) 2005-10-27
JP4335500B2 JP4335500B2 (ja) 2009-09-30

Family

ID=8182153

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002213798A Expired - Fee Related JP4335500B2 (ja) 2001-07-30 2002-07-23 半導体レーザおよびその製造方法

Country Status (3)

Country Link
US (1) US6782026B2 (enExample)
EP (1) EP1282208A1 (enExample)
JP (1) JP4335500B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003338664A (ja) * 2002-05-20 2003-11-28 Mitsubishi Electric Corp 半導体装置
JP2010272784A (ja) * 2009-05-25 2010-12-02 Panasonic Corp 半導体レーザ装置
CN113594846B (zh) * 2021-07-28 2024-09-27 中国科学院半导体研究所 半导体激光器及其制备方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878487A (ja) * 1981-10-29 1983-05-12 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
GB2156584B (en) * 1984-03-16 1987-11-04 Hitachi Ltd Semiconductor laser chip
CA1247947A (en) * 1984-07-31 1989-01-03 Masaru Wada Method of manufacturing semiconductor device
EP0236713A3 (de) * 1986-02-10 1988-06-29 Siemens Aktiengesellschaft Laserdiode
JPS62283685A (ja) * 1986-05-31 1987-12-09 Mitsubishi Electric Corp 半導体レ−ザ装置の製造方法
US4924476A (en) * 1987-12-04 1990-05-08 Cornell Research Foundation, Inc. Traveling wave semi-conductor laser
JPH02164089A (ja) * 1988-12-19 1990-06-25 Nec Corp 半導体レーザ素子
EP0437836B1 (en) 1989-12-27 1995-05-17 Nec Corporation Optical semiconductor device
JPH03206678A (ja) * 1990-01-08 1991-09-10 Nec Corp 半導体レーザー
JP3149030B2 (ja) * 1991-06-13 2001-03-26 富士通株式会社 半導体量子箱装置及びその製造方法
KR940007605B1 (ko) * 1991-11-07 1994-08-20 주식회사 금성사 반도체 레이저 다이오드 제조방법
JP3142333B2 (ja) * 1991-12-17 2001-03-07 株式会社東芝 分布帰還型半導体レ−ザ及びその駆動方法
EP0558089B1 (en) * 1992-02-28 2002-06-05 Hitachi, Ltd. Semiconductor optical integrated device and method of manufacture thereof, and light receiver using said device
JPH06232099A (ja) * 1992-09-10 1994-08-19 Mitsubishi Electric Corp 半導体装置の製造方法，半導体装置の製造装置，半導体レーザの製造方法，量子細線構造の製造方法，及び結晶成長方法
JPH07202263A (ja) * 1993-12-28 1995-08-04 Ricoh Co Ltd 端面発光型発光ダイオード、アレイ状光源、側面受光型受光素子、受発光素子、端面発光型発光ダイオードアレイ状光源
GB2309581B (en) * 1996-01-27 2000-03-22 Northern Telecom Ltd Semiconductor lasers
JPH1075009A (ja) * 1996-08-30 1998-03-17 Nec Corp 光半導体装置とその製造方法
US5972730A (en) * 1996-09-26 1999-10-26 Kabushiki Kaisha Toshiba Nitride based compound semiconductor light emitting device and method for producing the same
JP3734900B2 (ja) * 1996-10-31 2006-01-11 古河電気工業株式会社 半導体光導波路構造、光デバイス、及び、それらの製造方法
JP3244116B2 (ja) * 1997-08-18 2002-01-07 日本電気株式会社 半導体レーザー
US6052397A (en) * 1997-12-05 2000-04-18 Sdl, Inc. Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam
JP2000312054A (ja) * 1998-04-28 2000-11-07 Sharp Corp 半導体素子の製造方法、及び半導体素子
KR100277940B1 (ko) * 1998-07-14 2001-02-01 구자홍 지에이엔(gan) 반도체 레이저 다이오드 및 그 제조방법
JP4618854B2 (ja) * 2000-08-11 2011-01-26 Ｏｋｉセミコンダクタ株式会社 半導体装置およびその製造方法

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