JP2003037283A - アバランシェフォトダイオードアレイ - Google Patents

アバランシェフォトダイオードアレイ

Info

Publication number
JP2003037283A
JP2003037283A JP2002151870A JP2002151870A JP2003037283A JP 2003037283 A JP2003037283 A JP 2003037283A JP 2002151870 A JP2002151870 A JP 2002151870A JP 2002151870 A JP2002151870 A JP 2002151870A JP 2003037283 A JP2003037283 A JP 2003037283A
Authority
JP
Japan
Prior art keywords
bias
array
bias voltage
photodiode
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002151870A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003037283A5 (https=
Inventor
Ken A Nishimura
ケン・エー・ニシムラ
Brian E Lemoff
ブライアン・イー・レモフ
James N Hollenhorst
ジェームズ・エヌ・ホレンホースト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of JP2003037283A publication Critical patent/JP2003037283A/ja
Publication of JP2003037283A5 publication Critical patent/JP2003037283A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/959—Circuit arrangements for devices having potential barriers for devices working in avalanche mode

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2002151870A 2001-06-20 2002-05-27 アバランシェフォトダイオードアレイ Pending JP2003037283A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/885,906 US6858829B2 (en) 2001-06-20 2001-06-20 Avalanche photodiode array biasing device and avalanche photodiode structure
US09/885,906 2001-06-20

Publications (2)

Publication Number Publication Date
JP2003037283A true JP2003037283A (ja) 2003-02-07
JP2003037283A5 JP2003037283A5 (https=) 2005-09-29

Family

ID=25387960

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002151870A Pending JP2003037283A (ja) 2001-06-20 2002-05-27 アバランシェフォトダイオードアレイ

Country Status (2)

Country Link
US (1) US6858829B2 (https=)
JP (1) JP2003037283A (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008147416A (ja) * 2006-12-11 2008-06-26 Fujitsu Ltd アバランシェフォトダイオードのバイアス制御回路
JP2008311651A (ja) * 2007-06-15 2008-12-25 General Electric Co <Ge> 半導体光電子増倍器の構造
KR101068932B1 (ko) * 2009-12-01 2011-09-29 리치테크 테크놀로지 코포레이션 Ｌｅｄ 구동장치 및 구동방법
KR20110136828A (ko) * 2009-03-06 2011-12-21 코닌클리케 필립스 일렉트로닉스 엔.브이. 온도 보상 및 단일 광자 카운터들을 위한 제어 회로
JP2014216531A (ja) * 2013-04-26 2014-11-17 株式会社東芝 光検出装置、放射線検出装置、放射線分析装置及び光検出方法
JP2019161047A (ja) * 2018-03-14 2019-09-19 株式会社東芝 受光装置および受光装置の製造方法
JP2022551698A (ja) * 2019-10-09 2022-12-13 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 光導電体読み出し回路
JP2023136454A (ja) * 2022-03-17 2023-09-29 株式会社東芝 半導体装置、光検出システム、ライダー装置、移動体、検査方法、プログラム、及び記憶媒体

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US7612340B2 (en) * 2005-08-03 2009-11-03 Drs Sensors & Targeting Systems, Inc. Method of operating an avalanche photodiode for reducing gain normalized dark current
US7439482B2 (en) * 2006-07-19 2008-10-21 Raytheon Company Automatic avalanche photodiode bias setting system based on unity-gain noise measurement
CN100561896C (zh) * 2006-10-20 2009-11-18 华为技术有限公司 一种雪崩光电二极管接收机供电装置及方法
US7939790B1 (en) * 2007-03-02 2011-05-10 Wavesplitter Technologies, Inc. Method and apparatus for controlling the gain of an avalanche photodiode with fluctuations in temperature
US7615730B2 (en) * 2007-11-30 2009-11-10 Intel Corporation Device and method for measuring wavelength of an optical signal
WO2010070487A2 (en) * 2008-12-15 2010-06-24 Koninklijke Philips Electronics N.V. Temperature compensation circuit for silicon photomultipliers and other single photon counters
US8350205B2 (en) * 2009-05-26 2013-01-08 Princeton Lightwave, Inc. Optical receiver comprising breakdown-voltage compensation
JP5808592B2 (ja) 2011-07-04 2015-11-10 浜松ホトニクス株式会社 基準電圧決定方法及び推奨動作電圧決定方法
CN107658351B (zh) * 2011-12-29 2019-12-17 英特尔公司 具有低击穿电压的雪崩光电二极管
US10312397B2 (en) 2011-12-29 2019-06-04 Intel Corporation Avalanche photodiode with low breakdown voltage
US9761746B2 (en) 2013-03-11 2017-09-12 Intel Corporation Low voltage avalanche photodiode with re-entrant mirror for silicon based photonic integrated circuits
CN104394340B (zh) * 2014-11-21 2017-08-15 南京大学 智能apd阵列读出装置及方法
EP3081963B1 (en) 2015-04-15 2020-11-11 ams AG Avalanche diode arrangement and method for providing a detection signal
TWI616059B (zh) * 2016-07-01 2018-02-21 瑞昱半導體股份有限公司 操作電壓測試電路以及方法
CN107589295B (zh) * 2016-07-07 2021-02-12 瑞昱半导体股份有限公司 操作电压测试电路以及方法
EP3435422B1 (en) * 2017-07-26 2020-05-06 ams AG Spad device for excess bias monitoring
JP6862386B2 (ja) 2018-03-22 2021-04-21 株式会社東芝 光検出器、ライダー装置、及び光検出器の製造方法
WO2021167893A1 (en) 2020-02-21 2021-08-26 Hi Llc Integrated detector assemblies for a wearable module of an optical measurement system
US11883181B2 (en) 2020-02-21 2024-01-30 Hi Llc Multimodal wearable measurement systems and methods
US12029558B2 (en) 2020-02-21 2024-07-09 Hi Llc Time domain-based optical measurement systems and methods configured to measure absolute properties of tissue
US11969259B2 (en) 2020-02-21 2024-04-30 Hi Llc Detector assemblies for a wearable module of an optical measurement system and including spring-loaded light-receiving members
WO2021167892A1 (en) 2020-02-21 2021-08-26 Hi Llc Wearable devices and wearable assemblies with adjustable positioning for use in an optical measurement system
US12144653B2 (en) 2020-02-21 2024-11-19 Hi Llc Systems, circuits, and methods for reducing common-mode noise in biopotential recordings
US11950879B2 (en) 2020-02-21 2024-04-09 Hi Llc Estimation of source-detector separation in an optical measurement system
WO2021188486A1 (en) 2020-03-20 2021-09-23 Hi Llc Phase lock loop circuit based adjustment of a measurement time window in an optical measurement system
US11607132B2 (en) 2020-03-20 2023-03-21 Hi Llc Temporal resolution control for temporal point spread function generation in an optical measurement system
US11187575B2 (en) 2020-03-20 2021-11-30 Hi Llc High density optical measurement systems with minimal number of light sources
US12059262B2 (en) 2020-03-20 2024-08-13 Hi Llc Maintaining consistent photodetector sensitivity in an optical measurement system
US11245404B2 (en) 2020-03-20 2022-02-08 Hi Llc Phase lock loop circuit based signal generation in an optical measurement system
US11857348B2 (en) 2020-03-20 2024-01-02 Hi Llc Techniques for determining a timing uncertainty of a component of an optical measurement system
US11903676B2 (en) 2020-03-20 2024-02-20 Hi Llc Photodetector calibration of an optical measurement system
WO2021188485A1 (en) 2020-03-20 2021-09-23 Hi Llc Maintaining consistent photodetector sensitivity in an optical measurement system
US12085789B2 (en) 2020-03-20 2024-09-10 Hi Llc Bias voltage generation in an optical measurement system
US11864867B2 (en) 2020-03-20 2024-01-09 Hi Llc Control circuit for a light source in an optical measurement system by applying voltage with a first polarity to start an emission of a light pulse and applying voltage with a second polarity to stop the emission of the light pulse
US11877825B2 (en) 2020-03-20 2024-01-23 Hi Llc Device enumeration in an optical measurement system
US12138068B2 (en) 2020-03-20 2024-11-12 Hi Llc Techniques for characterizing a nonlinearity of a time-to-digital converter in an optical measurement system

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JPS6042962B2 (ja) 1978-06-14 1985-09-26 富士機器株式会社 温度調節器
US4236069A (en) * 1978-10-16 1980-11-25 Varo, Inc. Avalanche photodiode gain control system
JPS61255829A (ja) 1985-05-09 1986-11-13 Diafoil Co Ltd 熱可塑性樹脂シ−トの製造方法
JPS6278886A (ja) * 1985-10-01 1987-04-11 Iwatsu Electric Co Ltd アバランシエ・ホトダイオ−ドのバイアス回路
JPH089459B2 (ja) 1987-01-08 1996-01-31 キヤノン株式会社 画像形成装置
JPH0715979B2 (ja) * 1987-08-27 1995-02-22 三菱電機株式会社 超格子撮像素子
JPH01278898A (ja) 1988-04-29 1989-11-09 Toshiba Corp ウォータジェット推進装置
JP2686036B2 (ja) * 1993-07-09 1997-12-08 浜松ホトニクス株式会社 アバランシェフォトダイオードのバイアス回路
US5596186A (en) * 1993-12-08 1997-01-21 Nikon Corporation High sensitivity silicon avalanche photodiode
DE19603402A1 (de) 1995-02-24 1996-08-29 Basf Ag Weichgelatinekapseln
JP3839574B2 (ja) * 1998-01-12 2006-11-01 株式会社沖コムテック アバランシェフォトダイオード用バイアス電圧制御回路およびその調整方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008147416A (ja) * 2006-12-11 2008-06-26 Fujitsu Ltd アバランシェフォトダイオードのバイアス制御回路
JP2008311651A (ja) * 2007-06-15 2008-12-25 General Electric Co <Ge> 半導体光電子増倍器の構造
KR20110136828A (ko) * 2009-03-06 2011-12-21 코닌클리케 필립스 일렉트로닉스 엔.브이. 온도 보상 및 단일 광자 카운터들을 위한 제어 회로
JP2012519843A (ja) * 2009-03-06 2012-08-30 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 単一光子カウンタのための高度な温度報償及び制御回路
KR101689352B1 (ko) 2009-03-06 2017-01-02 코닌클리케 필립스 엔.브이. 온도 보상 및 단일 광자 카운터들을 위한 제어 회로
KR101068932B1 (ko) * 2009-12-01 2011-09-29 리치테크 테크놀로지 코포레이션 Ｌｅｄ 구동장치 및 구동방법
JP2014216531A (ja) * 2013-04-26 2014-11-17 株式会社東芝 光検出装置、放射線検出装置、放射線分析装置及び光検出方法
US10357214B2 (en) 2013-04-26 2019-07-23 Toshiba Medical Systems Corporation Photon counting CT apparatus, light detection device, radiation detection device, and radiation analysis device
JP2019161047A (ja) * 2018-03-14 2019-09-19 株式会社東芝 受光装置および受光装置の製造方法
JP2022551698A (ja) * 2019-10-09 2022-12-13 トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング 光導電体読み出し回路
JP2023136454A (ja) * 2022-03-17 2023-09-29 株式会社東芝 半導体装置、光検出システム、ライダー装置、移動体、検査方法、プログラム、及び記憶媒体

Also Published As

Publication number Publication date
US6858829B2 (en) 2005-02-22
US20020195545A1 (en) 2002-12-26

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