JP2002533938A - 励起蛍光体を有する可視光出力発生用の高効率固体発光装置 - Google Patents
励起蛍光体を有する可視光出力発生用の高効率固体発光装置Info
- Publication number
- JP2002533938A JP2002533938A JP2000590229A JP2000590229A JP2002533938A JP 2002533938 A JP2002533938 A JP 2002533938A JP 2000590229 A JP2000590229 A JP 2000590229A JP 2000590229 A JP2000590229 A JP 2000590229A JP 2002533938 A JP2002533938 A JP 2002533938A
- Authority
- JP
- Japan
- Prior art keywords
- phosphor
- visible light
- phosphor layer
- layer
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 230000005855 radiation Effects 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 abstract description 8
- 230000003287 optical effect Effects 0.000 abstract description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 20
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/218,816 | 1998-12-22 | ||
| US09/218,816 US6373188B1 (en) | 1998-12-22 | 1998-12-22 | Efficient solid-state light emitting device with excited phosphors for producing a visible light output |
| PCT/US1999/028326 WO2000038250A1 (en) | 1998-12-22 | 1999-11-30 | Efficient solid-state light emitting device with excited phosphors for producing a visible light output |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014032122A Division JP2014090220A (ja) | 1998-12-22 | 2014-02-21 | 励起蛍光体を有する可視光出力発生用の高効率固体発光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002533938A true JP2002533938A (ja) | 2002-10-08 |
| JP2002533938A5 JP2002533938A5 (https=) | 2017-08-31 |
Family
ID=22816626
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000590229A Pending JP2002533938A (ja) | 1998-12-22 | 1999-11-30 | 励起蛍光体を有する可視光出力発生用の高効率固体発光装置 |
| JP2014032122A Pending JP2014090220A (ja) | 1998-12-22 | 2014-02-21 | 励起蛍光体を有する可視光出力発生用の高効率固体発光装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014032122A Pending JP2014090220A (ja) | 1998-12-22 | 2014-02-21 | 励起蛍光体を有する可視光出力発生用の高効率固体発光装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6373188B1 (https=) |
| EP (1) | EP1145332A1 (https=) |
| JP (2) | JP2002533938A (https=) |
| CA (1) | CA2356530A1 (https=) |
| WO (1) | WO2000038250A1 (https=) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009267164A (ja) * | 2008-04-25 | 2009-11-12 | Kyocera Corp | 発光デバイスおよび発光デバイスの製造方法 |
| US7675075B2 (en) | 2003-08-28 | 2010-03-09 | Panasonic Corporation | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device |
| US8445929B2 (en) | 2005-03-14 | 2013-05-21 | Philips Lumileds Lighting Company Llc | Wavelength-converted semiconductor light emitting device |
| US8748923B2 (en) | 2005-03-14 | 2014-06-10 | Philips Lumileds Lighting Company Llc | Wavelength-converted semiconductor light emitting device |
Families Citing this family (95)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6329676B1 (en) * | 1999-03-01 | 2001-12-11 | Toru Takayama | Flat panel solid state light source |
| US6696703B2 (en) | 1999-09-27 | 2004-02-24 | Lumileds Lighting U.S., Llc | Thin film phosphor-converted light emitting diode device |
| TW480744B (en) * | 2000-03-14 | 2002-03-21 | Lumileds Lighting Bv | Light-emitting diode, lighting device and method of manufacturing same |
| JP2001267555A (ja) | 2000-03-22 | 2001-09-28 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| WO2002001649A1 (en) | 2000-06-29 | 2002-01-03 | Koninklijke Philips Electronics N.V. | Optoelectric element |
| US6650044B1 (en) | 2000-10-13 | 2003-11-18 | Lumileds Lighting U.S., Llc | Stenciling phosphor layers on light emitting diodes |
| TW474033B (en) * | 2000-11-03 | 2002-01-21 | United Epitaxy Co Ltd | LED structure and the manufacturing method thereof |
| JP2002170989A (ja) * | 2000-12-04 | 2002-06-14 | Sharp Corp | 窒化物系化合物半導体発光素子 |
| DE10112542B9 (de) * | 2001-03-15 | 2013-01-03 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes optisches Bauelement |
| US6522063B2 (en) * | 2001-03-28 | 2003-02-18 | Epitech Corporation | Light emitting diode |
| KR100413435B1 (ko) * | 2001-04-02 | 2003-12-31 | 엘지전자 주식회사 | 발광다이오드 및 그 제조방법 |
| US6642652B2 (en) | 2001-06-11 | 2003-11-04 | Lumileds Lighting U.S., Llc | Phosphor-converted light emitting device |
| US6576488B2 (en) * | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
| JPWO2003058726A1 (ja) * | 2001-12-28 | 2005-05-19 | サンケン電気株式会社 | 半導体発光素子、発光表示体、半導体発光素子の製造方法及び発光表示体の製造方法 |
| US6888170B2 (en) * | 2002-03-15 | 2005-05-03 | Cornell Research Foundation, Inc. | Highly doped III-nitride semiconductors |
| US6953740B2 (en) * | 2002-03-15 | 2005-10-11 | Cornell Research Foundation, Inc. | Highly doped III-nitride semiconductors |
| ATE535009T1 (de) * | 2002-05-08 | 2011-12-15 | Phoseon Technology Inc | Hocheffiziente halbleiter-lichtquelle sowie verfahren zu deren verwendung und herstellung |
| JP3707688B2 (ja) * | 2002-05-31 | 2005-10-19 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
| US20040140474A1 (en) * | 2002-06-25 | 2004-07-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device, method for fabricating the same and method for bonding the same |
| EP1528842A4 (en) * | 2002-08-08 | 2009-10-28 | Panasonic Corp | LIGHT EMITTING ELEMENT, MANUFACTURING METHOD AND DISPLAY DEVICE |
| US10340424B2 (en) | 2002-08-30 | 2019-07-02 | GE Lighting Solutions, LLC | Light emitting diode component |
| KR101182041B1 (ko) * | 2002-09-19 | 2012-09-11 | 크리 인코포레이티드 | 경사 측벽을 포함하고 인광물질이 코팅된 발광 다이오드,및 그의 제조방법 |
| KR20050103200A (ko) * | 2003-01-27 | 2005-10-27 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 인광계 광원 요소와 제조 방법 |
| US7312560B2 (en) * | 2003-01-27 | 2007-12-25 | 3M Innovative Properties | Phosphor based light sources having a non-planar long pass reflector and method of making |
| US7245072B2 (en) * | 2003-01-27 | 2007-07-17 | 3M Innovative Properties Company | Phosphor based light sources having a polymeric long pass reflector |
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| US7210977B2 (en) | 2003-01-27 | 2007-05-01 | 3M Innovative Properties Comapny | Phosphor based light source component and method of making |
| US20040159900A1 (en) * | 2003-01-27 | 2004-08-19 | 3M Innovative Properties Company | Phosphor based light sources having front illumination |
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| US7118438B2 (en) * | 2003-01-27 | 2006-10-10 | 3M Innovative Properties Company | Methods of making phosphor based light sources having an interference reflector |
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| US7125501B2 (en) * | 2003-04-21 | 2006-10-24 | Sarnoff Corporation | High efficiency alkaline earth metal thiogallate-based phosphors |
| US7368179B2 (en) * | 2003-04-21 | 2008-05-06 | Sarnoff Corporation | Methods and devices using high efficiency alkaline earth metal thiogallate-based phosphors |
| US7005679B2 (en) * | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
| US6869812B1 (en) | 2003-05-13 | 2005-03-22 | Heng Liu | High power AllnGaN based multi-chip light emitting diode |
| US20050104072A1 (en) | 2003-08-14 | 2005-05-19 | Slater David B.Jr. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
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| US7183587B2 (en) * | 2003-09-09 | 2007-02-27 | Cree, Inc. | Solid metal block mounting substrates for semiconductor light emitting devices |
| DE10353679A1 (de) * | 2003-11-17 | 2005-06-02 | Siemens Ag | Kostengünstige, miniaturisierte Aufbau- und Verbindungstechnik für LEDs und andere optoelektronische Module |
| WO2005062389A2 (en) * | 2003-12-24 | 2005-07-07 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7675075B2 (en) | 2003-08-28 | 2010-03-09 | Panasonic Corporation | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device |
| US8207548B2 (en) | 2003-08-28 | 2012-06-26 | Panasonic Corporation | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device |
| US8324632B2 (en) | 2003-08-28 | 2012-12-04 | Panasonic Corporation | Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device |
| US8692285B2 (en) | 2003-08-28 | 2014-04-08 | Panasonic Corporation | Semiconductor light emitting device, light emitting module, lighting apparatus and display element |
| US8445929B2 (en) | 2005-03-14 | 2013-05-21 | Philips Lumileds Lighting Company Llc | Wavelength-converted semiconductor light emitting device |
| US8748923B2 (en) | 2005-03-14 | 2014-06-10 | Philips Lumileds Lighting Company Llc | Wavelength-converted semiconductor light emitting device |
| JP2009267164A (ja) * | 2008-04-25 | 2009-11-12 | Kyocera Corp | 発光デバイスおよび発光デバイスの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2000038250A1 (en) | 2000-06-29 |
| CA2356530A1 (en) | 2000-06-29 |
| JP2014090220A (ja) | 2014-05-15 |
| EP1145332A1 (en) | 2001-10-17 |
| US6373188B1 (en) | 2002-04-16 |
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