JP2002530204A - レーザーアブレーションによる特徴部形成のためのマスク軌道 - Google Patents
レーザーアブレーションによる特徴部形成のためのマスク軌道Info
- Publication number
- JP2002530204A JP2002530204A JP2000583666A JP2000583666A JP2002530204A JP 2002530204 A JP2002530204 A JP 2002530204A JP 2000583666 A JP2000583666 A JP 2000583666A JP 2000583666 A JP2000583666 A JP 2000583666A JP 2002530204 A JP2002530204 A JP 2002530204A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- substrate
- laser
- nozzle
- feature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000608 laser ablation Methods 0.000 title description 7
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 238000000034 method Methods 0.000 claims abstract description 55
- 238000002679 ablation Methods 0.000 claims abstract description 31
- 230000008569 process Effects 0.000 claims abstract description 27
- 230000005855 radiation Effects 0.000 claims abstract description 19
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 230000003287 optical effect Effects 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229920006254 polymer film Polymers 0.000 claims description 8
- 238000003491 array Methods 0.000 claims description 7
- 239000005350 fused silica glass Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000005553 drilling Methods 0.000 claims 1
- 238000003754 machining Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000004886 process control Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 3
- 239000013598 vector Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229920001646 UPILEX Polymers 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- 102000003729 Neprilysin Human genes 0.000 description 1
- 108090000028 Neprilysin Proteins 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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- 230000001960 triggered effect Effects 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/389—Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/162—Manufacturing of the nozzle plates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
- B41J2/1634—Manufacturing processes machining laser machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/30—Organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/30—Organic material
- B23K2103/42—Plastics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Laser Beam Processing (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/196,962 | 1998-11-20 | ||
| US09/196,962 US6313435B1 (en) | 1998-11-20 | 1998-11-20 | Mask orbiting for laser ablated feature formation |
| PCT/US1999/005637 WO2000030799A1 (en) | 1998-11-20 | 1999-03-17 | Mask orbiting for laser ablated feature formation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002530204A true JP2002530204A (ja) | 2002-09-17 |
| JP2002530204A5 JP2002530204A5 (enExample) | 2006-05-11 |
Family
ID=22727475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000583666A Withdrawn JP2002530204A (ja) | 1998-11-20 | 1999-03-17 | レーザーアブレーションによる特徴部形成のためのマスク軌道 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6313435B1 (enExample) |
| EP (1) | EP1140414A1 (enExample) |
| JP (1) | JP2002530204A (enExample) |
| CN (1) | CN1326394A (enExample) |
| AU (1) | AU3451299A (enExample) |
| WO (1) | WO2000030799A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005533662A (ja) * | 2002-07-25 | 2005-11-10 | 松下電器産業株式会社 | インクジェット式ノズルおよびインクジェト式ノズルで使用するための孔をレーザ孔開けする方法 |
| WO2011016176A1 (ja) * | 2009-08-03 | 2011-02-10 | 東芝機械株式会社 | パルスレーザ加工装置およびパルスレーザ加工方法 |
Families Citing this family (71)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6555449B1 (en) | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
| US6573531B1 (en) * | 1999-09-03 | 2003-06-03 | The Trustees Of Columbia University In The City Of New York | Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures |
| US6830993B1 (en) * | 2000-03-21 | 2004-12-14 | The Trustees Of Columbia University In The City Of New York | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method |
| US6657157B1 (en) * | 2000-06-07 | 2003-12-02 | Westar Photonics, Inc. | Method, system and product for producing a reflective mask mirror and for ablating an object using said reflective mask mirror |
| US7115503B2 (en) | 2000-10-10 | 2006-10-03 | The Trustees Of Columbia University In The City Of New York | Method and apparatus for processing thin metal layers |
| AU2002235144A1 (en) * | 2000-11-27 | 2002-06-03 | The Trustees Of Columbia University In The City Of New York | Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrate |
| US6621044B2 (en) * | 2001-01-18 | 2003-09-16 | Anvik Corporation | Dual-beam materials-processing system |
| TW521310B (en) * | 2001-02-08 | 2003-02-21 | Toshiba Corp | Laser processing method and apparatus |
| US6623103B2 (en) | 2001-04-10 | 2003-09-23 | Lexmark International, Inc. | Laser ablation method for uniform nozzle structure |
| US7088758B2 (en) * | 2001-07-27 | 2006-08-08 | Cymer, Inc. | Relax gas discharge laser lithography light source |
| CN1330797C (zh) * | 2001-08-27 | 2007-08-08 | 纽约市哥伦比亚大学托管会 | 通过对相对于沟道区域的微结构的自觉偏移提高多晶薄膜晶体管器件之间均匀性的方法 |
| CN100339219C (zh) * | 2001-11-22 | 2007-09-26 | 佳能株式会社 | 液体喷射头 |
| AU2003220611A1 (en) * | 2002-04-01 | 2003-10-20 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a thin film |
| US6749285B2 (en) * | 2002-07-25 | 2004-06-15 | Matsushita Electric Industrial Co., Ltd. | Method of milling repeatable exit holes in ink-jet nozzles |
| JP2004066327A (ja) * | 2002-08-09 | 2004-03-04 | Tdk Corp | レーザ加工装置、加工方法、および当該加工方法を用いた回路基板の製造方法 |
| CN100447941C (zh) * | 2002-08-19 | 2008-12-31 | 纽约市哥伦比亚大学托管会 | 一种用于处理薄膜样本的方法、系统及其薄膜区域结构 |
| CN100459041C (zh) * | 2002-08-19 | 2009-02-04 | 纽约市哥伦比亚大学托管会 | 激光结晶处理薄膜样品以最小化边缘区域的方法和系统 |
| CN100336941C (zh) * | 2002-08-19 | 2007-09-12 | 纽约市哥伦比亚大学托管会 | 改进衬底上薄膜区域内诸区及其边缘区内均一性以及这种薄膜区域之结构的激光结晶处理工艺与系统 |
| US7718517B2 (en) | 2002-08-19 | 2010-05-18 | Im James S | Single-shot semiconductor processing system and method having various irradiation patterns |
| US7341928B2 (en) * | 2003-02-19 | 2008-03-11 | The Trustees Of Columbia University In The City Of New York | System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques |
| WO2004097915A1 (ja) * | 2003-04-25 | 2004-11-11 | Semiconductor Energy Laboratory Co., Ltd. | 液滴吐出装置、パターンの形成方法、および半導体装置の製造方法 |
| US6902604B2 (en) * | 2003-05-15 | 2005-06-07 | Fleetguard, Inc. | Electrostatic precipitator with internal power supply |
| US7450307B2 (en) * | 2003-09-09 | 2008-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
| WO2005029550A2 (en) * | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for producing crystalline thin films with a uniform crystalline orientation |
| US7318866B2 (en) | 2003-09-16 | 2008-01-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods for inducing crystallization of thin films using multiple optical paths |
| WO2005029546A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination |
| WO2005029551A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
| US7364952B2 (en) | 2003-09-16 | 2008-04-29 | The Trustees Of Columbia University In The City Of New York | Systems and methods for processing thin films |
| US7164152B2 (en) | 2003-09-16 | 2007-01-16 | The Trustees Of Columbia University In The City Of New York | Laser-irradiated thin films having variable thickness |
| WO2005029547A2 (en) * | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Enhancing the width of polycrystalline grains with mask |
| WO2005029548A2 (en) * | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | System and process for providing multiple beam sequential lateral solidification |
| TWI351713B (en) | 2003-09-16 | 2011-11-01 | Univ Columbia | Method and system for providing a single-scan, con |
| WO2005034193A2 (en) | 2003-09-19 | 2005-04-14 | The Trustees Of Columbia University In The City Ofnew York | Single scan irradiation for crystallization of thin films |
| US7633033B2 (en) | 2004-01-09 | 2009-12-15 | General Lasertronics Corporation | Color sensing for laser decoating |
| CN100533808C (zh) * | 2004-01-26 | 2009-08-26 | 株式会社半导体能源研究所 | 显示器件及其制造方法以及电视设备 |
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| KR101287314B1 (ko) | 2005-12-05 | 2013-07-17 | 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 막 처리 시스템과 방법, 및 박막 |
| DE102006022722B4 (de) * | 2006-05-12 | 2010-06-17 | Hueck Engraving Gmbh & Co. Kg | Verfahren und Vorrichtung zur Oberflächenstrukturierung eines Pressbleches oder eines Endlosbandes |
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| US8481887B2 (en) * | 2007-05-03 | 2013-07-09 | Electro Scientific Industries, Inc. | Method for machining tapered micro holes |
| US20090008827A1 (en) * | 2007-07-05 | 2009-01-08 | General Lasertronics Corporation, A Corporation Of The State Of California | Aperture adapters for laser-based coating removal end-effector |
| WO2009039482A1 (en) | 2007-09-21 | 2009-03-26 | The Trustees Of Columbia University In The City Of New York | Collections of laterally crystallized semiconductor islands for use in thin film transistors |
| WO2009042784A1 (en) | 2007-09-25 | 2009-04-02 | The Trustees Of Columbia University In The City Of New York | Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films |
| US8288682B2 (en) * | 2007-09-28 | 2012-10-16 | Intel Corporation | Forming micro-vias using a two stage laser drilling process |
| US8012861B2 (en) | 2007-11-21 | 2011-09-06 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
| CN101919058B (zh) | 2007-11-21 | 2014-01-01 | 纽约市哥伦比亚大学理事会 | 用于制备外延纹理厚膜的系统和方法 |
| WO2009067688A1 (en) | 2007-11-21 | 2009-05-28 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
| US8569155B2 (en) | 2008-02-29 | 2013-10-29 | The Trustees Of Columbia University In The City Of New York | Flash lamp annealing crystallization for large area thin films |
| JP2012508985A (ja) | 2008-11-14 | 2012-04-12 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 薄膜の結晶化のためのシステムおよび方法 |
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| US9646831B2 (en) | 2009-11-03 | 2017-05-09 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
| US8440581B2 (en) | 2009-11-24 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral solidification |
| US10112257B1 (en) * | 2010-07-09 | 2018-10-30 | General Lasertronics Corporation | Coating ablating apparatus with coating removal detection |
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| KR20140138134A (ko) | 2012-02-28 | 2014-12-03 | 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 | 강화 유리를 분리하는 방법과 장치 및 이에 의해 제조된 물품 |
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- 1999-03-17 AU AU34512/99A patent/AU3451299A/en not_active Withdrawn
- 1999-03-17 EP EP99916135A patent/EP1140414A1/en not_active Withdrawn
- 1999-03-17 CN CN99813496A patent/CN1326394A/zh active Pending
- 1999-03-17 WO PCT/US1999/005637 patent/WO2000030799A1/en not_active Ceased
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2001
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2005533662A (ja) * | 2002-07-25 | 2005-11-10 | 松下電器産業株式会社 | インクジェット式ノズルおよびインクジェト式ノズルで使用するための孔をレーザ孔開けする方法 |
| WO2011016176A1 (ja) * | 2009-08-03 | 2011-02-10 | 東芝機械株式会社 | パルスレーザ加工装置およびパルスレーザ加工方法 |
| JP5148717B2 (ja) * | 2009-08-03 | 2013-02-20 | 東芝機械株式会社 | パルスレーザ加工装置およびパルスレーザ加工方法 |
| US8933374B2 (en) | 2009-08-03 | 2015-01-13 | Toshiba Kikai Kabushiki Kaisha | Pulse laser machining apparatus and pulse laser machining method |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2000030799A1 (en) | 2000-06-02 |
| EP1140414A1 (en) | 2001-10-10 |
| CN1326394A (zh) | 2001-12-12 |
| US20010045974A1 (en) | 2001-11-29 |
| US6313435B1 (en) | 2001-11-06 |
| AU3451299A (en) | 2000-06-13 |
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