JP2002525851A - バイポーラトランジスタを有する半導体デバイスを製造する方法 - Google Patents

バイポーラトランジスタを有する半導体デバイスを製造する方法

Info

Publication number
JP2002525851A
JP2002525851A JP2000570829A JP2000570829A JP2002525851A JP 2002525851 A JP2002525851 A JP 2002525851A JP 2000570829 A JP2000570829 A JP 2000570829A JP 2000570829 A JP2000570829 A JP 2000570829A JP 2002525851 A JP2002525851 A JP 2002525851A
Authority
JP
Japan
Prior art keywords
mask
insulating region
electrically insulating
layer
semiconductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000570829A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002525851A5 (https=
Inventor
ドエード テルプストラ
キャサリーナ エッチ エッチ イーモンス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Publication of JP2002525851A publication Critical patent/JP2002525851A/ja
Publication of JP2002525851A5 publication Critical patent/JP2002525851A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/054—Forming extrinsic base regions on silicon substrate after insulating device isolation in vertical BJTs having single crystalline emitter, collector or base regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]

Landscapes

  • Bipolar Transistors (AREA)
JP2000570829A 1998-09-11 1999-08-31 バイポーラトランジスタを有する半導体デバイスを製造する方法 Pending JP2002525851A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP98203054 1998-09-11
EP98203054.6 1998-09-11
PCT/EP1999/006416 WO2000016392A1 (en) 1998-09-11 1999-08-31 Method of manufacturing a semiconductor device with a bipolar transistor

Publications (2)

Publication Number Publication Date
JP2002525851A true JP2002525851A (ja) 2002-08-13
JP2002525851A5 JP2002525851A5 (https=) 2006-11-02

Family

ID=8234106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000570829A Pending JP2002525851A (ja) 1998-09-11 1999-08-31 バイポーラトランジスタを有する半導体デバイスを製造する方法

Country Status (5)

Country Link
US (1) US6150224A (https=)
EP (1) EP1048066B1 (https=)
JP (1) JP2002525851A (https=)
DE (1) DE69935967T2 (https=)
WO (1) WO2000016392A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1082758A2 (en) * 1998-11-13 2001-03-14 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device comprising a bipolar transistor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0378794A1 (en) * 1989-01-18 1990-07-25 International Business Machines Corporation Vertical bipolar transistor structure and method of manufacturing
US5106767A (en) * 1990-12-07 1992-04-21 International Business Machines Corporation Process for fabricating low capacitance bipolar junction transistor
US5117271A (en) * 1990-12-07 1992-05-26 International Business Machines Corporation Low capacitance bipolar junction transistor and fabrication process therfor
JP2582519B2 (ja) * 1992-07-13 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション バイポーラ・トランジスタおよびその製造方法
DE19609933A1 (de) * 1996-03-14 1997-09-18 Daimler Benz Ag Verfahren zur Herstellung eines Heterobipolartransistors

Also Published As

Publication number Publication date
DE69935967D1 (de) 2007-06-14
US6150224A (en) 2000-11-21
EP1048066A1 (en) 2000-11-02
DE69935967T2 (de) 2008-01-10
WO2000016392A1 (en) 2000-03-23
EP1048066B1 (en) 2007-05-02

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