JP2002517902A - 紫外線レーザ出力による導電性リンクの切断方法 - Google Patents

紫外線レーザ出力による導電性リンクの切断方法

Info

Publication number
JP2002517902A
JP2002517902A JP2000552717A JP2000552717A JP2002517902A JP 2002517902 A JP2002517902 A JP 2002517902A JP 2000552717 A JP2000552717 A JP 2000552717A JP 2000552717 A JP2000552717 A JP 2000552717A JP 2002517902 A JP2002517902 A JP 2002517902A
Authority
JP
Japan
Prior art keywords
link
laser output
passivation layer
laser
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000552717A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002517902A5 (enExample
Inventor
ソン ユンロン
スヴェンソン エドワード
Original Assignee
エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド filed Critical エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド
Publication of JP2002517902A publication Critical patent/JP2002517902A/ja
Publication of JP2002517902A5 publication Critical patent/JP2002517902A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Laser Beam Processing (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2000552717A 1998-06-05 1999-06-04 紫外線レーザ出力による導電性リンクの切断方法 Pending JP2002517902A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/092,490 1998-06-05
US09/092,490 US6057180A (en) 1998-06-05 1998-06-05 Method of severing electrically conductive links with ultraviolet laser output
PCT/US1999/012465 WO1999063592A1 (en) 1998-06-05 1999-06-04 Method of severing electrically conductive links with ultraviolet laser output

Publications (2)

Publication Number Publication Date
JP2002517902A true JP2002517902A (ja) 2002-06-18
JP2002517902A5 JP2002517902A5 (enExample) 2006-01-05

Family

ID=22233486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000552717A Pending JP2002517902A (ja) 1998-06-05 1999-06-04 紫外線レーザ出力による導電性リンクの切断方法

Country Status (10)

Country Link
US (1) US6057180A (enExample)
EP (1) EP1092237B1 (enExample)
JP (1) JP2002517902A (enExample)
KR (1) KR100696256B1 (enExample)
CN (1) CN1198329C (enExample)
AU (1) AU4417799A (enExample)
CA (1) CA2330653A1 (enExample)
DE (1) DE69936646T2 (enExample)
TW (1) TW445684B (enExample)
WO (1) WO1999063592A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003519933A (ja) * 2000-01-10 2003-06-24 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド レーザシステム及び超短パルスのパルスレーザからなるバーストを用いたメモリリンクの加工方法

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CN1303519A (zh) 2001-07-11
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KR20010043254A (ko) 2001-05-25
CA2330653A1 (en) 1999-12-09
CN1198329C (zh) 2005-04-20
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US6057180A (en) 2000-05-02
EP1092237A1 (en) 2001-04-18
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AU4417799A (en) 1999-12-20
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