JP2002514015A - 発光半導体装置 - Google Patents

発光半導体装置

Info

Publication number
JP2002514015A
JP2002514015A JP2000547678A JP2000547678A JP2002514015A JP 2002514015 A JP2002514015 A JP 2002514015A JP 2000547678 A JP2000547678 A JP 2000547678A JP 2000547678 A JP2000547678 A JP 2000547678A JP 2002514015 A JP2002514015 A JP 2002514015A
Authority
JP
Japan
Prior art keywords
light emitting
layer
semiconductor device
wavelength
reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000547678A
Other languages
English (en)
Japanese (ja)
Inventor
ヴェークライター ヴァルター
Original Assignee
オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー オッフェネ ハンデルスゲゼルシャフト
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー オッフェネ ハンデルスゲゼルシャフト filed Critical オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー オッフェネ ハンデルスゲゼルシャフト
Publication of JP2002514015A publication Critical patent/JP2002514015A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/405Reflective materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
JP2000547678A 1998-04-30 1999-04-16 発光半導体装置 Pending JP2002514015A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19819543A DE19819543A1 (de) 1998-04-30 1998-04-30 Lichtemissions-Halbleitereinrichtung
DE19819543.5 1998-04-30
PCT/DE1999/001164 WO1999057788A2 (de) 1998-04-30 1999-04-16 Lichtemissions-halbleitereinrichtung

Publications (1)

Publication Number Publication Date
JP2002514015A true JP2002514015A (ja) 2002-05-14

Family

ID=7866418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000547678A Pending JP2002514015A (ja) 1998-04-30 1999-04-16 発光半導体装置

Country Status (5)

Country Link
EP (1) EP1075710A2 (de)
JP (1) JP2002514015A (de)
CN (1) CN1298553A (de)
DE (1) DE19819543A1 (de)
WO (1) WO1999057788A2 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011159672A (ja) * 2010-01-29 2011-08-18 Oki Data Corp 半導体発光装置および画像表示装置
KR101081196B1 (ko) 2010-03-22 2011-11-07 엘지이노텍 주식회사 발광소자 및 그 제조방법과 발광소자 패키지

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6643304B1 (en) * 2000-07-26 2003-11-04 Axt, Inc. Transparent substrate light emitting diode
US6988554B2 (en) * 2003-05-01 2006-01-24 Cooper Cameron Corporation Subsea choke control system
DE102004026125A1 (de) 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zu dessen Herstellung
DE102008006988A1 (de) 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
EP2355151A3 (de) * 2010-01-29 2015-12-30 Oki Data Corporation Halbleiterlichtemissionsvorrichtung und Bildgebungsvorrichtung
CN101964387A (zh) * 2010-08-25 2011-02-02 柳翠 Led芯片结构
DE102012110006A1 (de) * 2012-10-19 2014-04-24 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
US9508891B2 (en) 2014-11-21 2016-11-29 Epistar Corporation Method for making light-emitting device
DE102015111379A1 (de) 2015-07-14 2017-01-19 Sick Ag Optoelektronischer Sensor
CN109037405B (zh) * 2018-07-16 2020-11-13 厦门三安光电有限公司 微发光装置及其显示器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958877A (ja) * 1982-09-28 1984-04-04 Toshiba Corp 半導体発光装置
US5652178A (en) * 1989-04-28 1997-07-29 Sharp Kabushiki Kaisha Method of manufacturing a light emitting diode using LPE at different temperatures
DE4011145A1 (de) * 1990-04-06 1991-10-10 Telefunken Electronic Gmbh Lumineszenz-halbleiterelement
JPH0766455A (ja) * 1993-08-24 1995-03-10 Shin Etsu Handotai Co Ltd 半導体発光装置
FR2726126A1 (fr) * 1994-10-24 1996-04-26 Mitsubishi Electric Corp Procede de fabrication de dispositifs a diodes electroluminescentes a lumiere visible
JPH08222768A (ja) * 1995-02-17 1996-08-30 Iwasaki Electric Co Ltd 積層型発光ダイオード
US5708280A (en) * 1996-06-21 1998-01-13 Motorola Integrated electro-optical package and method of fabrication

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011159672A (ja) * 2010-01-29 2011-08-18 Oki Data Corp 半導体発光装置および画像表示装置
KR101081196B1 (ko) 2010-03-22 2011-11-07 엘지이노텍 주식회사 발광소자 및 그 제조방법과 발광소자 패키지

Also Published As

Publication number Publication date
DE19819543A1 (de) 1999-11-11
CN1298553A (zh) 2001-06-06
WO1999057788A2 (de) 1999-11-11
EP1075710A2 (de) 2001-02-14
WO1999057788A3 (de) 1999-12-29

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